A9A12 Search Results

Contextual Info: iPEM 2.4Gb SDRAM-DDR AS4DDR32M72PBG1 32Mx72 DDR SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS DDR SDRAM Data Rate = 200, 250, 266, 333Mbps Package: • 208 Plastic Ball Grid Array PBGA , 16 x 23mm-1.0mm pitch 2.5V ±0.2V core power supply

NT5DS16M16BF-6K

Abstract: NT5DS32M8BT NT5DS16M16BT-6K NT5DS16M16BT NT5DS64M4BT NT5DS32M
Contextual Info: NT5DS64M4BT NT5DS32M8BT NT5DS16M16BT NT5DS64M4BF NT5DS32M8BF NT5DS16M16BF NT5DS64M4BS NT5DS32M8BS NT5DS16M16BS NT5DS64M4BG NT5DS32M8BG NT5DS16M16BG 256Mb DDR SDRAM Features • Data mask DM for write data • DLL aligns DQ and DQS transitions with CK transitions

DDR200

Abstract: DDR266A DDR266B IBMN62540 IBMN625404GT3B IBMN62580 IBMN625804GT3B
Contextual Info: IBMN625404GT3B IBMN625804GT3B 256Mb Double Data Rate Synchronous DRAM Preliminary Features CAS Latency and Frequency CAS Latency Maximum Operating Frequency MHz * DDR266A (7N) DDR266B (75N) DDR200 (8N) 133 143 100 133 100 125 2 2.5 * Values are nominal (exact tCK should be used).

DDR200

Abstract: DDR266A HYB25D256400AT-7 HYB25D256400AT-8 HYB25D256800AT-7 HYB25D256800AT-8 TSOP66
Contextual Info: HYB25D256400/800AT 256-MBit Double Data Rata SDRAM Features CAS Latency and Frequency CAS Latency 2 2.5 Maximum Operating Frequency MHz DDR266A DDR200 -7 -8 133 100 143 125 • Double data rate architecture: two data transfers per clock cycle • Bidirectional data strobe (DQS) is transmitted

A48P4616

Abstract: DDR333 DDR400
Contextual Info: A48P4616 Preliminary 16M X 16 Bit DDR DRAM Document Title 16M X 16 Bit DDR DRAM Revision History Rev. No. 0.0 History Issue Date Remark Initial issue September 5, 2005 Preliminary Preliminary September, 2005, Version 0.0 AMIC Technology, Corp. A48P4616 Features

Contextual Info: W3E16M64S-XBX 16Mx64 DDR SDRAM FEATURES BENEFITS  DDR Data Rate = 200, 250, 266Mbps  50% SPACE SAVINGS  Package: • 219 Plastic Ball Grid Array PBGA , 21 x 25mm  Reduced part count  2.5V ±0.2V core power supply  Reduced I/O count

Contextual Info: 128MB, 256MB x64 200-PIN DDR SODIMMs MT8VDDT1664HG MT8VDDT3264HG SMALL-OUTLINE DDR SDRAM MODULE - 128MB - 256MB For the latest data sheet, please refer to the Micron Web site: www.micron.com/moduleds FEATURES 200-Pin SODIMM MO-224 • 200-pin small-outline dual in-line memory module

Contextual Info: 64MB, 128MB x72, ECC 184-PIN DDR SDRAM DIMMs DDR SDRAM DIMM MODULE MT5VDDT872A, MT5VDDT1672A For the latest data sheet, please refer to the Micron Web site: www.micron.com/moduleds FEATURES 184-Pin DIMM (MO 206) • JEDEC standard 184-pin, dual in-line memory

57256

Abstract: DDR200 DDR266B MT46V16M16 MT46V32M8 MT46V64M4
Contextual Info: PRELIMINARY‡ 256Mb: x4, x8, x16 DDR SDRAM DOUBLE DATA RATE DDR SDRAM MT46V64M4 – 16 Meg x 4 x 4 banks MT46V32M8 – 8 Meg x 8 x 4 banks MT46V16M16 – 4 Meg x 16 x 4 banks For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/datasheets/

HYB25DC256163CE

Contextual Info: Datasheet, Rev.1.00, Feb. 2006 HYB25DC256163CE-5.0 HYB25DC256163CE-6.0 16M x 16 Double Data Rate SDRAM DDR SDRAM Green Product Memory Products Edition 2006-02 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München, Germany Infineon Technologies AG 2006.

W641GG2KB

Abstract: gddr3 schematic WBGA-136 W641GG2
Contextual Info: W641GG2KB 1-Gbit GDDR3 Graphics SDRAM Table of Contents 1. GENERAL DESCRIPTION . 6 2. FEATURES . 7

Contextual Info: ADVANCE‡ 128MB, 256MB x64 184-PIN DDR SDRAM DIMMs DDR SDRAM DIMM MODULE MT8VDDT1664AG MT8VDDT3264AG For the latest data sheet, please refer to the Micron Web site: www.micron.com/datasheets FEATURES 184-Pin DIMM MO-206 • 184-pin dual in-line memory module (DIMM)

Contextual Info: ADVANCE‡ 1GB x72, ECC 184-PIN DDR DIMM REGISTERED DDR SDRAM DIMM MODULE MT36VDDF12872 – 1GB For the latest data sheet, please refer to the Micron Web site: www.micron.com/moduleds Features Figure 1: 184-Pin DIMM MO-206 • 184-pin, dual in-line memory module (DIMM)

Contextual Info: 64MB, 128MB X64 184-PIN DDR SDRAM DIMM DDR SDRAM DIMM MODULE MT4VDDT864A, MT4VDDT1664A For the latest data sheet, please refer to the Micron Web site: www.micron.com/moduleds FEATURES Figure 1: 184-Pin DIMM (MO–206) • JEDEC standard 184-pin, dual in-line memory

W3E16M72S-XBX

Abstract: W3E32M72S-XBX
Contextual Info: White Electronic Designs W3E16M72S-XBX 16Mx72 DDR SDRAM FEATURES DDR SDRAM Rate = 200, 250, 266 Package: • 219 Plastic Ball Grid Array PBGA , 32 x 25mm BENEFITS 40% SPACE SAVINGS Reduced part count Reduced I/O count • 34% I/O Reduction 2.5V ±0.2V core power supply

81BB

Abstract: BAA marking code DDR200 DDR266 HYB25D256 HYB25D256160BT-5 HYB25D256400B HYB25D256400BC-5 HYB25D256800BT-5
Contextual Info: Data Sheet, Rev. 1.2, Feb. 2004 HYB25D256400B[T/C] L HYB25D256800B[T/C](L) HYB25D256160B[T/C](L) 256 Mbit Double Data Rate SDRAM DDR SDRAM Memory Products N e v e r s t o p t h i n k i n g . Edition 2004-02 Published by Infineon Technologies AG, St.-Martin-Strasse 53,

U15B

Contextual Info: PRELIMINARY‡ 1GB, 2GB x72 184-PIN REGISTERED DDR SDRAM DIMMs DDR SDRAM DIMM MT36VDDT12872 MT36VDDT25672 For the latest data sheet, please refer to the Micron Web site: www.micron.com/moduleds FEATURES 184-Pin DIMM MO-206 • 184-pin, dual in-line memory modules (DIMM)

16GB

Abstract: DDR DIMM pinout micron 184
Contextual Info: ADVANCE‡ 256MB, 512MB ECC x72 184-pin DDR SDRAM DIMMs DDR SDRAM DIMM MODULE MT18VDDT3272AG - 256MB MT18VDDT6472AG - 512MB For the latest data sheet, please refer to the Micron Web site: www.micron.com/datasheets FEATURES 184-Pin DIMM MO-206 • 184-pin dual in-line memory module (DIMM)

MT16VDDS6464HG-265

Contextual Info: 512MB x64 200-PIN DDR SODIMM MT16VDDS6464H - 512MB SMALL-OUTLINE DDR SDRAM MODULE For the latest data sheet, please refer to the Micron Web site: www.micron.com/moduleds FEATURES 200-Pin SODIMM (Twin-Die) MO-224 • 200-pin, small-outline, dual in-line memory

Contextual Info: PRELIMINARY‡ 512Mb: x4, x8, x16 DDR SDRAM DOUBLE DATA RATE DDR SDRAM MT46V128M4 – 32 MEG X 4 X 4 BANKS MT46V64M8 – 16 MEG X 8 X 4 BANKS MT46V32M16 – 8 MEG X 16 X 4 BANKS For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/datasheets

Contextual Info: 128MB, 256MB x64 200-PIN DDR SODIMMs MT8VDDT1664HG MT8VDDT3264HG SMALL-OUTLINE DDR SDRAM MODULE - 128MB - 256MB For the latest data sheet, please refer to the Micron Web site: www.micron.com/moduleds FEATURES 200-Pin SODIMM MO-224 • 200-pin small-outline dual in-line memory module

Contextual Info: PREVIEW‡ 256MB x64 184-PIN DDR SDRAM DIMMs DDR SDRAM DIMM MODULE MT16VDDT3264A - 256MB For the latest data sheet, please refer to the Micron Web site: www.micron.com/moduleds FEATURES • • • • • • • • • • • • • • • • •

W3E64M72S-XBX

Contextual Info: White Electronic Designs W3E64M72S-XBX ADVANCED* 64Mx72 DDR SDRAM BENEFITS FEATURES Data rate = 200, 250, 266 and 333Mbs 66% Space Savings vs. TSOP Package: Reduced part count • 219 Plastic Ball Grid Array PBGA , 25 x 32mm 55% I/O reduction vs TSOP 2.5V ±0.2V core power supply

timing controller SHART

Abstract: T21N K4U52324Q SAMSUNG GDDR4 K4U52324QE-BC09 GDDR4
Contextual Info: 512M GDDR4 SGRAM K4U52324QE 512Mbit GDDR4 SGRAM 2M x 32Bit x 8 Banks Graphic Double Data Rate 4 Synchronous DRAM with Uni-directional Data Strobe and DLL 136Ball FBGA Revision 1.0 June 2006 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,