VN1210 Search Results

VN1210M

Abstract: VN1206M VN1206L
Contextual Info: VN1206L/M, VN1210M N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 6 @ VGS = 10 V 0.8 to 2 0.23 6 @ VGS = 10 V 0.8 to 2 0.26 10 @ VGS = 2.5 V 0.8 to 2 0.2 VN1206L VN1206M 120 VN1210M

VN1206L

Abstract: VN1210M VN1206M
Contextual Info: VN1206L/M, VN1210M N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 6 @ VGS = 10 V 0.8 to 2 0.23 6 @ VGS = 10 V 0.8 to 2 0.26 10 @ VGS = 2.5 V 0.8 to 2 0.2 VN1206L VN1206M 120 VN1210M

VN1206

Abstract: vn1210
Contextual Info: VN1206 VN1210 in c . N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices Order Number / Package b v dss / ^D S O N I d i ON) b v dgs (max) (min) TO-39 TO-92 TO-220 120V 6n 1.0A VN1206B VN1206L VN1206D 120 V io n

vn1206

Contextual Info: S i I I m m m m tß iw itfu w i | r ZJ r Ï u . f VN1206 VN1210 Irir', » N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss/ ^ D S O N I d (ON) b v dgs (max) (min) TO-39 TO-92 TO-220 VN1206B VN1206L VN1206D

Contextual Info: VN1210D Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)120 V(BR)GSS (V)120Í I(D) Max. (A)1.5 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)45 Minimum Operating Temp (øC)

VN1206L

Abstract: VN1206M VN1210M
Contextual Info: VN1206L/M, VN1210M Siliconix NĆChannel EnhancementĆMode MOS Transistors Product Summary Part Number V BR DSS Min (V) VN1206L VN1206M 1 120 VN1210M rDS(on) Max (W) VGS(th) (V) ID (A) 6 @ VGS = 10 V 0.8 to 2 0.23 6 @ VGS = 10 V 0.8 to 2 0.26 10 @ VGS = 2.5 V

vn1210m

Contextual Info: am & SS VNDQ12 N-Channel Enhancement-Mode MOSFETs TYPE PACKAGE Single TO-237 • VN1206M, VN1210M Single TO-92 TO-226AA • VN1206L, VN1210L, TN1206L Single Chip • Available as VNDQ4CHP DEVICE TYPICAL CHARACTERISTICS Output Characteristics for Low Gate Drive

Contextual Info: T em ic smcons_ VN1206L/M, VN1210M N-Channel Enhancement-Mode MOS Transistors Product Summary P a rt Num ber : VV BR DSS Min (V) VN1206L VN1206M 120 VN1210M Features Benefits • • • • • • • • • • Low On-Resistance: 3.8 Q

VN1210L

Contextual Info: VN1210 SERIES N-Channel Enhancement-Mode MOS Transistors TO -92 TO-226AA B O T T O M VIEW PRODUCT SUMMARY VN1210L 120 VN1210M Q V (BR)DSS (V) la PA R T N UM BER >D (A) PACKAGE 10 0.18 TO-92 120 10 0.20 TO-237 Performance Curves: VNDQ12 2 GATE 3 DRAIN TO-237

yn1206

Contextual Info: Temic Siliconix_YN1206L/M, YN1210M N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Mín (V) VN1206L VN1206M 120 VN1210M r DS(on) Max (Q) VGS(th) Id (A) (V) 6@ VGS = 10 V 0.8 to 2 0.23 6@ VGS = 10 V 0.8 to 2 0.26

Contextual Info: VN1206 VN1210 &à Supertex inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information R d S ON b v dgs (max) Order Number / Package II BV0SS/ TO-39 TO-92 TO-220 120V 6£2 1.0A V N 1206B V N 12 0 6 L V N 12 0 6 D 120V 10£2 1.0A — V N 12 1 0 L

3821J

Contextual Info: Tem ic VN1206L/M, VN1210M Se m i c f l n d u c K i r s N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V ) r DS(on) VN1206M Vcs(ih)(V) I d (A ) 0.8 to 2 0.23 6 @ V o s - 10 V 0.8 to 2 0.26 10 @ V q s = 2.5 V 0.8 to 2

VN1210M

Abstract: VN1206L VN1206M
Contextual Info: VN1206L/M, VN1210M N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 6 @ VGS = 10 V 0.8 to 2 0.23 6 @ VGS = 10 V 0.8 to 2 0.26 10 @ VGS = 2.5 V 0.8 to 2 0.2 VN1206L VN1206M 120 VN1210M

vn1210l transistor

Abstract: VN1206 supertex 08 vn1210 transistor VN1206 VN1206B VN1206D VN1206L VN1210 VN1210B VN1210D
Contextual Info: ni SUPERTEX INC 1 7 07732^5 GGDltSfi b J ~ VN1206 VN1210 r- N-Channe! Enhancement-Mode Vertical DMOS Power FETs 3f -os' Ordering Information Order Num ber / Package b v dss/ R DS(ON) *D(ON) BVDgs (max) (min) TO-39 TO-92 TO-220 120 V 6 fi 1.0A VN1206B VN1206L

Contextual Info: □ï SUPERTEX INC 1 7 07732^5 DOOlbSÖ h V N 1206 V N 1210 r- -if-os’ N-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Information Order Number / Package b v dss/ R DS(ON) *D(ON) BVDgs (max) (min) TO-39 TO-92 TO-220 120 V 60 1.0A VN1206B VN1206L

IRF150CF

Abstract: GENTRON 2SK747A EUM159M 2SK798 EFM159M179 YTF152 YTFP150 2SK747
Contextual Info: MOSFETs Item Number Part Number Manufacturer V BR OSS (V) loss Max (A) Po Max (W) ros (on) (Ohms) gFS Min (S) VGS(th) Max (V) Clsa Max (F) tr Max (s) tf Max (s) Toper Max (OC) Package Style N-Channel Enhancement-Type, (Co nt' d) 5 10 BUZ349 BUZ349 SFN152 YTFP152

TN0604N3

Abstract: HV5808 VQ1000 VP2210 HV50530 HV5708 TP0606N3 VP0635N5 VQ1001 replacement 2N6659 supertex
Contextual Info: Supertex Inc. OBSOLETE PRODUCT LIST Updated 12/13/02 Obsolete Part # Pkg Suggested Replacement Same pkg Suggested Replacement - Sim. Elec. (If same pkg alt is not close) Drop-In Alt Status 2N6659 VN2210N2 TN0104N3 obs 2N7007 TN5325N3 - obs AN0332 CG -

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

VN0655ND

Abstract: VN0660N2 VN0660N3 VN0660N5 VN0660ND VN1106N2 VN1110N2 VN1110N5
Contextual Info: - f §y £ *t € % VN0655ND SUPERTEX N ± ft £ Vds or Vd g Vg s V (V) is iTa=25°C) Pd Id Ig s s V g s th) I dss * /CH * /CH (A) (nA) iff) (V) (V) ft Id (on) g fs Ciss Coss Crss Vg s =0 Vg s (V) *typ (A) Id (A) Vg s (V) *typ (S) (*typ) (max) Id (A)

VQ1000P

Abstract: VN10L siliconix VN10KM VN0610L VN10KE VN10KM VN10LE VN10LM VN2222L VQ1000J
Contextual Info: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) •d Continuous (Amps) 60 60 5.0 5.0 240 240 170 170 6.0 10.0 6.0 Power Dissipation (Watts) . Part Number 0.2 0.2 0.315 0.315 VN10KE VN10LE 0.3 0.25 0.3 0.25 0.3 0.25

buz 350 equivalent

Abstract: VN0109n5 analog VN10KM equivalent supertex VN10KE VN67ad analog VN0300M equivalent VQ1004 equivalent vq1004 sony 2sj54 siliconix VN10KM
Contextual Info: Siliconix 1-1? f l MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) •d Continuous (Amps) Power Dissipation (Watts) . Part Number 60 60 5.0 5.0 0.2 0.2 0.315 0.315 VN10KE VN10LE 240 240 170 170 10.0 6.0 0.3 0.25

VN0300M

Abstract: siliconix VN10KM VN0606M 25XX VN0300D VP1001P VQ1001J VQ3001J VQ3001P VQ7254J
Contextual Info: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) 60 60 • d Continuous (Amps) Power Dissipation (Watts) . Part Number 5.0 5.0 0.2 0.2 0.315 0.315 VN10KE VN10LE 6.0 0.3 0.25 0.3 0.25 0.3 0.25 0.35 0.4 0.3 0.3 0.25

VN2410L equivalent

Abstract: VN1210M equivalent VN2410L "cross reference" VN2410M VN0300M equivalent MTM8N20 VN1710M IRF340 IRF350 IRF450
Contextual Info: 1-17 MOSPOWER Cross Reference List c « g s s <0J= i n i n m i n • - CM CM CM ^ • 'd d d o d 1o o o o o I m iD lO m | ' r r r 's ' I O O < O Ò I I I I I | ' ' ' lO ' I P ' ' ' ' I I j j CO00 COCO j j ' I o o r i mm | ioom m I L -^ ^ l I c\i CM i I I I I OOOO ' ' I

2N6658

Abstract: VN66AF siliconix VN10KM VN89AF VN88AF 2n6657 2N6656 VN67 VN80AF VN89AD
Contextual Info: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdow n V olta ge (Volts) 60 60 • d C on tin u ou s (Amps) Power D issipation (Watts) . Part Num ber 0.2 0.2 0.315 0.315 VN10KE VN10LE 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0