TP802C06 Search Results

FP3FF

Contextual Info: TP802C06HOA SCHOTTKY BARRIER DIODE Features • <&vF Low V f C onnection Diagram Super high speed sw itchin g. High reliability by planer design. : Appl ¡cations High speed pow er sw itchin g. M a xim u m Ratings and Characteristics : Absolute M axim um Ratings

Contextual Info: TP802C06 10A (60V / 10A ) Outline drawings, mm SCHOTTKY BARRIER DIODE K-Pack(L) Features JEDEC Low VF EIAJ Super high speed switching Connection diagram High reliability by planer design Applications High speed power switching 2 1 3 Maximum ratings and characteristics

TP802C06

Contextual Info: TP802C06 10A (60V / 10A ) Outline drawings, mm SCHOTTKY BARRIER DIODE K-Pack(L) Features JEDEC Low VF EIAJ Super high speed switching Connection diagram High reliability by planer design Applications High speed power switching 種 機 1 Maximum ratings and characteristics

TP802C06

Contextual Info: TP802C06 10A • Outline Drawing scH O TTK Y b a r r i e r d io d e 4.5 ,(0 . 18) o 10.5 (0 .41 ) 1.2 f- 1.32 ( 0 .05 ) in ( 0 .05 ) t j- ò 0.8 (0 .03 ) 2.54 (0 . 1) 2.54 (0.1) 0.4 (0 .02 ) 2.7 (0 .11) Tabless TO-220 Connection Diagram ■ Features • Lo w V f

Contextual Info: TP802C06 10A (60V / 10A ) Outline drawings, mm SCHOTTKY BARRIER DIODE K-Pack(L) Features JEDEC Low VF EIAJ Super high speed switching Connection diagram High reliability by planer design Applications High speed power switching 2 1 3 Maximum ratings and characteristics

Contextual Info: Schottky-Barrier Diodes Dual package Ratings and characteristics Maximum rating Vrrm lo *1 TS802C06 TS802C09 TP802C04 TP802C06 TP802C09 ESAC82-004 ESAC82M-004 O II CO ^1 5.0 Mass Grams Fig. No. Irrm * 3 Max. mA Dimensions -40 t o +125 0.55 If=2.5A 5.0 0.6

Contextual Info: TP802C06 10A (60V / 10A ) Outline drawings, mm SCHOTTKY BARRIER DIODE K-Pack(L) Features JEDEC Low VF EIAJ Super high speed switching Connection diagram High reliability by planer design 種07. 機 定 h 20 Applications High speed power switching Maximum ratings and characteristics

H125

Abstract: TP802C06 A455
Contextual Info: TP802C06HOA SCHOTTKY BARRIER DIODE Features • <&vF Low V f C onnection Diagram Super high speed sw itchin g. High reliability by planer design. : Appl ¡cations High speed pow er sw itchin g. M a xim u m Ratings and Characteristics : Absolute M axim um Ratings

TP802C06

Abstract: liaj
Contextual Info: TP802C06 ioa S ' g y M 1— • ^ x) T ¥ ^ — K SCHOTTKY BARRIER DIODE Features • fevf Low V f Connection Diagram Super high speed switching. High reliability by planer design. O : Applications O Ò ® High speed power switching. Maximum Ratings and Characteristics

TTC 103

Abstract: A454 H125 TP802C06 A455
Contextual Info: TP802C06HOA SCHOTTKY BARRIER DIODE Features • <&vF Low V f C onnection Diagram Super high speed sw itchin g. High reliability by planer design. : Appl ¡cations High speed pow er sw itchin g. M a xim u m Ratings and Characteristics : Absolute M axim um Ratings

Contextual Info: TP802C06 10A (60V / 10A ) Outline drawings, mm SCHOTTKY BARRIER DIODE K-Pack(L) Features JEDEC Low VF EIAJ Super high speed switching Connection diagram High reliability by planer design Applications High speed power switching 2 1 3 Maximum ratings and characteristics

SMD Transistors w04 sot-23

Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.

r4kf

Abstract: A454 30S3 T151 T460 T760 T930 TP802C06 T4600
Contextual Info: T P 802C 06 ioa *±'J'*-K ' > a - y h + - / < U 7 i ef * - K SCHOTTKY BARRIER DIODE I» « Features '1&Vf Low V f C o n n e c tio n D ia g ra m Super high speed sw itch in g . a w e « *« « !* High reliability by planer design : A ppl ¡cations H igh speed pow er sw itch in g .

6DI15S-050

Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
Contextual Info: fl^ Ä f^ l/T y p e Number Index Page Page Page Page Page Page 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 12 17 17 14 13 15 1MBH15D-120 1MBH20D-060 1MBH25-120 1MBH25D-120 1MBH30D-060 1MBH50-060 19 19 19 19 19 19 2DI75Z-120 2DI75Z-140

Contextual Info: M/m 5? 4 yJj.TJL' m — K / Rectifier Diodes JfelS» ir m 2 in one-package a Devieetype KS823C04 T a=2£C Therm«! rating Characteristics • *3 lFSM*a Tj and Tstg Max. Volts Max.mA Amps. r SMP t f f t A Maximum ratiog VftRM k ) * 1 Volts Amps. SMD KP823C04

ERG81-004

Abstract: ERB38-D ESAC6 YG802C04 ESAD33-02 ERA18 ERB81-004 era-84 YG811S0 YG802C06
Contextual Info: Schottky-barrier diodes Connection Package V rrm Volts 40 45 60 90 Lead Single SC If s m (Amps.) 0.6 25 1.0 50 1.0 50 1.0 30 1.0 30 1.0 30 2.0 80 2.0 100 2.0 60 2.0 60 3.0 120 3.0 80 3.0 80 1.0 40 1.0 30 1.0 30 K-pack 5.0 80 TO-22QAB 5.0 120 5.0 10 TO-220F17 *

mp2a5100

Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
Contextual Info: 富士電機半導体 総 合 カ タ ログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors

Contextual Info: SCHOTTKY BARRIER DIODES 20 - 90Vo Its 20 - 30V O LT S Part Number •o A PAC KAG E SURFACE MOUNT M S flfttfe ERA82-004 *1 ERA83-004 *1 ERA81-004 *2 ERB83-004 *2 ERC81-004 *4 ERC81S-004 *4 ERC80-004 ERC62-004 ERC80M-004 ERC62M-004 AXIAL TO*220 TO-220F ,TQs22 F<5 ,

TL130

Abstract: tc122 25 8 4 yg802c10 SD883-04 SD833-04 LM3661TL-1.40 TC8520 tc9145 TS802C09 ERA82-004
Contextual Info: 整流ダイオード / Rectifier Diodes • ショットキーバリアダイオード Schottky-Barrier Diodes（SBD） シングル 1 in one-package 形 式 Device type ERA82-004 SC802-04 SC802-06 SC802-09 ERA83-004 ERA83-006 ERA81-004 ERA84-009 ERA85-009

G-160B

Abstract: pg123s15 2FI300A-060 yg121s15 6RI50E-080M5 PA905C6 2fi300a esja18-08 ERD81-004 ESJA83-16A
Contextual Info: Notice of Scheduled Discontinuation of Products Because we are unable to ensure the continued production and maintenance of some manufacturing equipment for our semiconductor products, the products for which stable production and sufficient reliability are expected to become difficult will be discontinued as

yg802c10

Abstract: LM3661TL-1.40 YG803C04 YG803C06 TL1115 tc-118 sd TL130 YG805C10 YG835C04 YG811S04
Contextual Info: 整流ダイオード / Rectifier Diodes • ショットキーバリアダイオード Schottky-Barrier Diodes（SBD） シングル 1 in one-package 形 式 Device type SMD 絶対最大定格 対応品 Maximum rating VRRM IF AV ＊1 Volts Amps. 接合保存温度

YG811S06

Abstract: SD883-04 SD833 ERA82-004 ESAB82-004 ESAB85-009 ESAC82-004 TP801C04 TP801C06 TP802C04
Contextual Info: Schottky-barrier diode Quick Selection Guide Nov-01 SBD Single Package VRRM Volts 20 30 40 Io 45 60 O O O Lead O O O O O O O O O O O O O O SC(SMD) O O SD(SMD) O O O K-pack(SMD) K-pack TO-220AB O O O O O O TO-220F O O O O TO-3P M5R POWER M6R M8R M6R O O O

common anode schottky to220

Abstract: ERB81-004 era-84 era82 ks823c esac82
Contextual Info: SCHOTTKY BARRIER DIODES <S 20 - 90Volts 45 VOLTS 2 0 - 3 0 VOLTS PACKAGE Part Number lo A SURFACE MOUNT SC TYPE 60 VOLTS lo (A) Part Number 1 SC802-04 Part Number SC802-06 90 VOLTS lo (A) Part Number 1 SC802-09 lo (A) 1 ERA82-004 *1 *1 1 ERA85-009 *1 ’1

jtw 04 DIODE

Abstract: 455 IFT
Contextual Info: T P802C 06 ioa SCHOTTKY BARRIER DIODE Features • foV F Low V F • m m & m e -K ^ n tc jii' C onnection Diagram Super high speed sw itchin g. High reliability by planer design. : Applications • X jtw u z '{v * > r High speed pow er sw itchin g. M a xim u m Ratings and Characteristics