A454 Search Results

Contextual Info: PolySwitch PTC Devices 308 Constitution Drive Menlo Park, CA 94025-1164 Phone: 800-227-4856 www.circuitprotection.com PRODUCT: SMD100F/33 Overcurrent Protection Device Raychem Circuit Protection Products DOCUMENT: SCD 25369 PCN: A45463 REV LETTER: E REV DATE: APRIL 28, 2007

BR17

Contextual Info: TMS320C6474 SPRS552H – OCTOBER 2008 – REVISED APRIL 2011 www.ti.com TMS320C6474 Multicore Digital Signal Processor 1 Features 12 • Key Features – High-Performance Multicore DSP C6474 – Instruction Cycle Time: 0.83 ns (1.2-GHz Device); 1 ns (1-GHz Device); 1.18 ns

7813 Texas Instruments Transistor

Abstract: TMS320C6000 TMS320C6474 C6000 C6474 C64X DDR2-667 SPRS552H BR17
Contextual Info: TMS320C6474 SPRS552H – OCTOBER 2008 – REVISED APRIL 2011 www.ti.com TMS320C6474 Multicore Digital Signal Processor 1 Features 12 • Key Features – High-Performance Multicore DSP C6474 – Instruction Cycle Time: 0.83 ns (1.2-GHz Device); 1 ns (1-GHz Device); 1.18 ns

transistor d880

Abstract: BR17
Contextual Info: TMS320C6474 www.ti.com SPRS552E – OCTOBER 2008 – REVISED APRIL 2010 TMS320C6474 Multicore Digital Signal Processor 1 Features 12 • Key Features – High-Performance Multicore DSP C6474 – Instruction Cycle Time: 0.83 ns (1.2-GHz Device); 1 ns (1-GHz Device); 1.18 ns

TC5116160

Abstract: A461
Contextual Info: T O S H IB A TC5116160AI/AFT-60/70/80 1,048,576 WORD X 16 BIT DYNAMIC RAM DESCRIPTION The TC5116160AJ/AFT is the new generation dynam ic RAM organized 1,048,576 w ord by 16 bit. The TC5116160AJ/AFT utilizes T oshiba's CM OS silicon gate process technology as well as advanced circuit

TC511664BJl

Abstract: toshiba TC511664BJL TC511664
Contextual Info: T EN TA TIV E D A TA 65,536 W O R D x 16 BIT D Y N A M IC RAM DESCRIPTION T: '1'Call SG4TUL/EZL is the new generation dynamic RAM organized 65,536 words by 16 bits. The lc3 ibJL/'BZL utilizes TOSHIBA'S CMOS Silicon gate process technology as well as advanced

C02CB

Abstract: K 1979 E81A B834A baa6
Contextual Info: 83- 6756 =<C3> 9/@167;5 >39/D 4HESTQHR U w0C278=6 A4;0H U caam BF8C278=6 20?018;8CH U ~CA>=6 A4B8BC0=24 018;8CH C> B7>2: Z E81A0C8>= U t40EH ;>03 D? C> ff_e:,m U e:, 384;42CA82 BCA4=6C7 [14CF44= 2>8; 0=3 2>=C02CB\ U q=E8A>=<4=C0; 5A84=3;H ?A>3D2C [}>t~ 2><?;80=C\

Contextual Info: 1 0 4 8 ,5 7 6 W O R D x PRELIMINARY 4 BIT D Y N A M IC R A M DESCRIPTION The TC514402AP/AJ/ASJ/AZ is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The TC514402AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as

sandisk eMMC 4.41

Abstract: toshiba emmc 4.4 spec SANDISK inand Samsung eMMC 4.41 sandisk emmc 4.5 bcm 4330 programming Guide Sandisk iNAND eMMC toshiba emmc 4.4 linux toshiba emmc 4.4.1 spec sandisk inand extreme emmc
Contextual Info: An addendum for this document is available. See Document ID#: IMX25RMAD. i.MX25 Multimedia Applications Processor Reference Manual Supports i.MX251 MCIMX251 i.MX253 (MCIMX253) i.MX255 (MCIMX255) i.MX257 (MCIMX257) i.MX258 (MCIMX258) IMX25RM Rev. 1 06/2009

Contextual Info: TENTATIVE DATA 65,535 WORD x 15 BIT DYNAMIC RAM D E S CRIPTION T b e T C S l l GkW BJL'BZL is the new g e n e ra tio n dyna^nic R A M o rg an ize d 6 5 ,536 w ords by 16 b its. The T C £ t J6 6 4 0 JL /3 Z .L u tilize s T O S H IB A 'S C M O S S ilic c r. p:.te p rocess tech n ology as weii a s ad van ced

2SC640

Abstract: 3N27 BC130C
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

2SC114 transistor

Abstract: FZJ 131 usaf516es047m PMT222 2SC286 2SC287 2SC430 400M transistor 2SC114 replacement transistor 2SC114
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

Contextual Info: CSD17507Q5A SLPS243E – JULY 2010 – REVISED JULY 2011 www.ti.com 30V, N-Channel NexFET Power MOSFETs Check for Samples: CSD17507Q5A PRODUCT SUMMARY FEATURES 1 • • • • • • • 2 Ultralow Qg and Qgd Low Thermal Resistance Avalanche Rated Pb Free Terminal Plating

Contextual Info: CSD17510Q5A SLPS271F – JULY 2010 – REVISED OCTOBER 2011 www.ti.com 30V, N-Channel NexFET Power MOSFETs Check for Samples: CSD17510Q5A PRODUCT SUMMARY FEATURES 1 • • • • • • • 2 Ultralow Qg and Qgd Low Thermal Resistance Avalanche Rated

0G05

Contextual Info: 90.&423180'#&*. 0,'7*$*,*38 90003/0770/430432 90 /,3#)'204003/0C8 20411'.304003/077A0F-02 90%1'620#233/.0/100%/.'%3*/. 90!/1,&6*&'0#001/5#,201001'0/13 90'&*%#,0F001/5#,003*/. 9090"'#10!#11#.38 9E0ACE0BEFE0108DC .2314-'.3#3*/.

Contextual Info: CSD17310Q5A www.ti.com SLPS255A – FEBRUARY 2010 – REVISED JULY 2010 30V, N-Channel NexFET Power MOSFETs Check for Samples: CSD17310Q5A FEATURES 1 • • • • • • • • 2 PRODUCT SUMMARY Optimized for 5V Gate Drive Ultralow Qg and Qgd Low Thermal Resistance

r4kf

Abstract: A454 30S3 T151 T460 T760 T930 TP802C06 T4600
Contextual Info: T P 802C 06 ioa *±'J'*-K ' > a - y h + - / < U 7 i ef * - K SCHOTTKY BARRIER DIODE I» « Features '1&Vf Low V f C o n n e c tio n D ia g ra m Super high speed sw itch in g . a w e « *« « !* High reliability by planer design : A ppl ¡cations H igh speed pow er sw itch in g .

bddf

Contextual Info: CP3SP33 www.ti.com SNOSCW5 – MAY 2013 Connectivity Processor with Cache, DSP, and Bluetooth , USB, and Dual CAN Interfaces Check for Samples: CP3SP33 1 Introduction 1.1 Features 123 • CPU Features – Fully static RISC processor core, capable of operating from 0 to 96 MHz with zero

transistor D880 circuit diagram application

Abstract: GP-07 BR17
Contextual Info: TMS320C6474 SPRS552H – OCTOBER 2008 – REVISED APRIL 2011 www.ti.com TMS320C6474 Multicore Digital Signal Processor 1 Features 12 • Key Features – High-Performance Multicore DSP C6474 – Instruction Cycle Time: 0.83 ns (1.2-GHz Device); 1 ns (1-GHz Device); 1.18 ns

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

BR17

Contextual Info: TMS320C6474 SPRS552H – OCTOBER 2008 – REVISED APRIL 2011 www.ti.com TMS320C6474 Multicore Digital Signal Processor 1 Features 12 • Key Features – High-Performance Multicore DSP C6474 – Instruction Cycle Time: 0.83 ns (1.2-GHz Device); 1 ns (1-GHz Device); 1.18 ns

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