SI7401DN Search Results

74229

Abstract: Si7411DN Si7401DN Si7401DN-T1 Si7401DN-T1-E3 Si7411DN-T1-E3
Contextual Info: Specification Comparison Vishay Siliconix Si7411DN vs. Si7401DN Description: Package: Pin Out: P-Channel, 20 V D-S MOSFET PowerPAK 1212-8 Identical Part Number Replacements Si7411DN-T1-E3 Replaces Si7401DN-T1-E3 Si7411DN-T1-E3 Replaces Si7401DN-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Si7401DN

Abstract: Si7401DN-T1
Contextual Info: Si7401DN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –20 rDS(on) (Ω) ID (A) 0.021 at VGS = – 4.5 V – 11 0.028 at VGS = – 2.5 V – 9.8 0.034 at VGS = – 1.8 V – 8.9 • TrenchFET Power MOSFETS: 1.8-V Rated • New PowerPAK® Package

Si7401DN

Abstract: Si7401DN-T1
Contextual Info: Si7401DN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –20 rDS(on) (Ω) ID (A) 0.021 at VGS = – 4.5 V – 11 0.028 at VGS = – 2.5 V – 9.8 0.034 at VGS = – 1.8 V – 8.9 • TrenchFET Power MOSFETS: 1.8-V Rated • New PowerPAK® Package

S0331

Contextual Info: Si7401DN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) ID (A) 0.021 @ VGS = - 4.5 V - 11 0.028 @ VGS = - 2.5 V - 9.8 0.034 @ VGS = - 1.8 V - 8.9 D TrenchFETr Power MOSFETS: 1.8-V Rated D New PowerPAKr Package

Contextual Info: Si7401DN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –20 rDS(on) (Ω) ID (A) 0.021 @ VGS = –4.5 V –11 0.028 @ VGS = –2.5 V –9.8 0.034 @ VGS = –1.8 V –8.9 • TrenchFET Power MOSFETS: 1.8-V Rated • New PowerPAK® Package

74284

Abstract: MAR 527 73834 AN609 Si7401DN
Contextual Info: Si7401DN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

p-channel mosfet

Abstract: Si7401DN
Contextual Info: SPICE Device Model Si7401DN Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si7401DN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –20 rDS(on) (Ω) ID (A) 0.021 @ VGS = –4.5 V –11 0.028 @ VGS = –2.5 V –9.8 0.034 @ VGS = –1.8 V –8.9 • TrenchFET Power MOSFETS: 1.8-V Rated • New PowerPAK® Package

s0331

Abstract: Si7401DN
Contextual Info: Si7401DN New Product Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (A) 0.021 @ VGS = –4.5 V –11 0.028 @ VGS = –2.5 V –9.8 0.034 @ VGS = –1.8 V –8.9 D TrenchFETr Power MOSFETS: 1.8-V Rated D New PowerPAKt Package

Contextual Info: New Product Si7613DN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e,f 0.0087 at VGS = - 10 V - 35 0.014 at VGS = - 4.5V - 35 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

s8058

Contextual Info: Si7120DN Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 ID (A) 0.019 at VGS = 10 V 10 0.028 at VGS = 4.5 V 8.2 • • • • • Halogen-free Option Available TrenchFET Power MOSFET RoHS COMPLIANT New Low Thermal Resistance

Contextual Info: SQS464EEN www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • Typical ESD Protection 800 V • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd

SQS404EN-T1-GE3

Abstract: marking D3 TSOP-6 PPAK1212
Contextual Info: SQS404EN www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested

MAR 826

Contextual Info: SQ7415AEN www.vishay.com Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen free According to IEC61249-2-21 Definition • TrenchFET Power MOSFET • PowerPAK® Package - Low Thermal Resistance, RthJC

Contextual Info: SQS482EN www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested 30 RDS(on) () at VGS = 10 V 0.0085 RDS(on) () at VGS = 4.5 V

Contextual Info: SiS434DN Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0076 at VGS = 10 V 35 0.0092 at VGS = 4.5 V 35 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested

Contextual Info: SQ7415EN www.vishay.com Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET • PowerPAK® Package - Low Thermal Resistance, RthJC - Low 1.07 mm Profile • Fast Switching • AEC-Q101 Qualified

TSOP8

Abstract: si7401
Contextual Info: Si7820DN Vishay Siliconix N-Channel 200 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 RDS(on) () ID (A) 0.240 at VGS = 10 V 2.6 0.250 at VGS = 6 V 2.5 Qg (Typ.) 12.1 PowerPAK 1212-8 APPLICATIONS S 3.30 mm • Primary Side Switch - Telecom Power Supplies

si7415dn-t1-ge3

Contextual Info: Si7415DN Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 60 ID (A) 0.065 at VGS = - 10 V - 5.7 0.110 at VGS = - 4.5 V - 4.4 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • Fast Switching

Contextual Info: Si7922DN Vishay Siliconix Dual N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.195 at VGS = 10 V 2.5 0.230 at VGS = 6 V 2.3 • Halogen-free Option Available • TrenchFET Power MOSFET • New Low Thermal Resistance PowerPAK®

si7615

Abstract: SI7615ADN SI7615A
Contextual Info: New Product Si7615ADN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () Max. ID (A) 0.0044 at VGS = - 10 V - 35a 0.0060 at VGS = - 4.5 V - 35a 0.0098 at VGS = - 2.5 V a Qg (Typ.) 59 nC - 35 APPLICATIONS PowerPAK 1212-8

SiSA18DN

Contextual Info: New Product SiSA18DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)f 0.0075 at VGS = 10 V 38.3 0.0120 at VGS = 4.5 V 30.2 • TrenchFET Gen IV Power MOSFET • 100 % Rg and UIS Tested • Material categorization:

Contextual Info: Si7107DN Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.0108 at VGS = - 4.5 V - 15.3 0.015 at VGS = - 2.5 V - 13.0 0.020 at VGS = - 1.8 V - 11.2 PowerPAK 1212-8 • Halogen-free According to IEC 61249-2-21

Contextual Info: SiS407ADN www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) MAX. ID (A) f, g 0.009 at VGS = -4.5 V -18 0.0122 at VGS = -2.5 V -18 0.0190 at VGS = -1.8 V -18 VDS (V) -20 • TrenchFET power MOSFET Qg (TYP.)