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    S0331 Search Results

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    Sifam Tinsley Precision Instrumentation Ltd XS03-315071S000000

    Split Core, 400:5, 4.7x3.2" Op.
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    DigiKey XS03-315071S000000 350 1
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    RS XS03-315071S000000 Bulk 4 Weeks 1
    • 1 $175.37
    • 10 $159.59
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    Sullins Connector Solutions 8015-11S-0331-30

    CONN D-SUB RCPT 15POS VERT SLDR
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    DigiKey 8015-11S-0331-30 Tray 100 100
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    Sullins Connector Solutions 8025-01S-0331-20

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    DigiKey 8025-01S-0331-20 Tray 100 100
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    Sullins Connector Solutions 8009-01S-0331-20

    CONN D-SUB RCPT 9POS VERT PRESS
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    DigiKey 8009-01S-0331-20 Tray 100 100
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    Sullins Connector Solutions 8015-01S-0331-30

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    DigiKey 8015-01S-0331-30 Tray 100 100
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    S0331 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    S0331

    Contextual Info: Si7401DN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) ID (A) 0.021 @ VGS = - 4.5 V - 11 0.028 @ VGS = - 2.5 V - 9.8 0.034 @ VGS = - 1.8 V - 8.9 D TrenchFETr Power MOSFETS: 1.8-V Rated D New PowerPAKr Package


    Original
    Si7401DN 07-mm Si7401DN-T1 S-03311--Rev. 26-Mar-01 S0331 PDF

    71872

    Abstract: MARK NXK s0331
    Contextual Info: Package Information Vishay Siliconix PowerPAKr MLP33−6, 8 and 10 4xQ // ccc A NX 8 Detail D TopView C A2 A1 A3 0.08 C Side View Detail C NX b bbb M C A A e 1 ÉÉÉ ÇÇ ÉÉÉ ÇÇ ÉÉÉ Detail C A1 Seating Plane C 5 ddd M C 2 Exposed Pad Optional L


    Original
    MLP33-6, 17-mm 13-Feb-03 71872 MARK NXK s0331 PDF

    s0331

    Abstract: Si7401DN
    Contextual Info: Si7401DN New Product Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (A) 0.021 @ VGS = –4.5 V –11 0.028 @ VGS = –2.5 V –9.8 0.034 @ VGS = –1.8 V –8.9 D TrenchFETr Power MOSFETS: 1.8-V Rated D New PowerPAKt Package


    Original
    Si7401DN 07-mm S-03311--Rev. 26-Mar-01 s0331 PDF

    Si7405DN

    Contextual Info: Si7405DN New Product Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –12 rDS(on) (W) ID (A) 0.016 @ VGS = –4.5 V –13 0.022 @ VGS = –2.5 V –11 0.028 @ VGS = –1.8 V –9.8 D TrenchFETr Power MOSFETS: 1.8-V Rated D New PowerPAKt Package


    Original
    Si7405DN 07-mm S-03310--Rev. 26-Mar-01 PDF

    JC-DEC97

    Abstract: hyundai hy57v161610d
    Contextual Info: - H Y U N D A I -# HY57V161610D 2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION Preliminary THE Hyundai HY57V161610D is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V161610D is organized as 2banks of


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    HY57V161610D HY57V161610D 216-bits 288x16. 1SD33- JC-DEC97, JC-DEC97 hyundai hy57v161610d PDF