SI7411DN Search Results

Si7411DN

Abstract: Si7411DN-T1-E3 Si7411DN-T1-GE3
Contextual Info: Si7411DN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.019 at VGS = - 4.5 V - 11.4 - 20 0.025 at VGS = - 2.5 V - 9.9 0.034 at VGS = - 1.8 V - 8.5 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET: 1.8 V Rated

Contextual Info: Si7411DN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.019 at VGS = - 4.5 V - 11.4 - 20 0.025 at VGS = - 2.5 V - 9.9 0.034 at VGS = - 1.8 V - 8.5 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET: 1.8 V Rated

AN609

Abstract: Si7411DN
Contextual Info: Si7411DN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

74229

Abstract: Si7411DN Si7401DN Si7401DN-T1 Si7401DN-T1-E3 Si7411DN-T1-E3
Contextual Info: Specification Comparison Vishay Siliconix Si7411DN vs. Si7401DN Description: Package: Pin Out: P-Channel, 20 V D-S MOSFET PowerPAK 1212-8 Identical Part Number Replacements Si7411DN-T1-E3 Replaces Si7401DN-T1-E3 Si7411DN-T1-E3 Replaces Si7401DN-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Contextual Info: Si7411DN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.019 at VGS = - 4.5 V - 11.4 - 20 0.025 at VGS = - 2.5 V - 9.9 0.034 at VGS = - 1.8 V - 8.5 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET: 1.8 V Rated

Contextual Info: Si7411DN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.019 @ VGS = −4.5 V −11.4 0.025 @ VGS = −2.5 V −9.9 0.034 @ VGS = −1.8 V −8.5 D TrenchFETr Power MOSFET: 1.8-V Rated D New PowerPAKr Package

Contextual Info: Si7411DN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.019 @ VGS = −4.5 V −11.4 0.025 @ VGS = −2.5 V −9.9 0.034 @ VGS = −1.8 V −8.5 D TrenchFETr Power MOSFET: 1.8-V Rated D New PowerPAKr Package

S-40763

Abstract: Si7411DN Si7411DN-T1
Contextual Info: Si7411DN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.019 @ VGS = −4.5 V −11.4 0.025 @ VGS = −2.5 V −9.9 0.034 @ VGS = −1.8 V −8.5 D TrenchFETr Power MOSFET: 1.8-V Rated D New PowerPAKr Package

Si7411DN-T1-GE3

Abstract: Si7411DN Si7411DN-T1-E3
Contextual Info: Si7411DN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.019 at VGS = - 4.5 V - 11.4 - 20 0.025 at VGS = - 2.5 V - 9.9 0.034 at VGS = - 1.8 V - 8.5 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET: 1.8 V Rated

SI7411DN

Contextual Info: Si7411DN Vishay Siliconix New Product P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) ID (A) 0.019 @ VGS = - 4.5 V - 11.4 0.025 @ VGS = - 2.5 V - 9.9 0.034 @ VGS = - 1.8 V - 2.9 D TrenchFETr Power MOSFET: 1.8-V Rated D New PowerPAKr Package

S83051

Contextual Info: Si7411DN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.019 at VGS = - 4.5 V - 11.4 - 20 0.025 at VGS = - 2.5 V - 9.9 0.034 at VGS = - 1.8 V - 8.5 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET: 1.8 V Rated

Si7411DN

Contextual Info: SPICE Device Model Si7411DN Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si7411DN Vishay Siliconix New Product P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.019 @ VGS = −4.5 V −11.4 0.025 @ VGS = −2.5 V −9.9 0.034 @ VGS = −1.8 V −2.9 D TrenchFETr Power MOSFET: 1.8-V Rated D New PowerPAKr Package

Si7411DN

Contextual Info: SPICE Device Model Si7411DN Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si7411DN SPICE Device Model

Abstract: Si7411DN
Contextual Info: SPICE Device Model Si7411DN Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si7411DN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.019 @ VGS = −4.5 V −11.4 0.025 @ VGS = −2.5 V −9.9 0.034 @ VGS = −1.8 V −8.5 D TrenchFETr Power MOSFET: 1.8-V Rated D New PowerPAKr Package

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

BS250KL-TR1-E3

Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
Contextual Info: NEW! Siliconix MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Fig. Package VDSS V ID (A) RDS(on) (Ω) Digi-Key Part No. Cut Tape Price Each 1 25 100 Tape and Reel ‡ Qty. Pricing Vishay Part No. Fig. 1 — 1206-8

BS250KL

Abstract: tsop6 marking 345 SUD50P08 SI3437 SUD19P06-60L MOSFET SUB75P03 tsop6 marking 443 Si5947DU Si1471DH SI1073X
Contextual Info: P-Channel Power MOSFETs Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no

GS 069

Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
Contextual Info: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no

220v AC voltage stabilizer schematic diagram

Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585

Diode SOT-23 marking 15d

Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
Contextual Info: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs