STH8N80 Search Results

gc212

Abstract: STH8N80 STH8N80FI STW8N80 C18070
Contextual Info: 7 T 2 t1 2 3 7 OOMSTOO *=554 • S G T H _ SGS-THOMSON LK3TOKS ¿ 5 7 STH8N80/FI STW8N80 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V STH8N80 STH8N 80FI STW 8N80 ■ . ■ . . . ■ dss 800 V 800 V 800 V RDS on Id

E22N80

Abstract: lta 301
Contextual Info: £ j ï SGS-THOMSON ULKgraMOeS S T E 22 N80 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE TYP E STE22N80 V dss 800 V R D S o n Id < 0 .4 Q. 22 A . HIGH CURRENT POWER MODULE . AVALANCHE RUGGED TECHNOLOGY (SEE STH8N80 FOR RATING) . VERY LARGE SOA - LARGE PEAK POWER

STH8N80FI

Abstract: 8N80F 8n80
Contextual Info: *57 STH8N80 STH8N80FI SGS-THOMSON iLC N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE STH8N80 STH 8N80FI Voss RpS on Id 800 V 800 V 1.2 a 1.2 n 8 .2 A 5.1 A . . . . . . AVALANC HE R UG G EDNESS TECHNO LO G Y 100% AVALANCHE TESTED REPETITIVE AVALANC HE DATA AT 100°C

schematic STH8N80FI

Abstract: GCI655D STH8N80 STH8N80FI STW8N80 teas 0C21170 640VB GC21220 gc212
Contextual Info: 2 .M I lo - SGS-THOMSON IILiKêTO«! [ p STH8N80/FI STW8N80 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE STH 8N 80 S TH 8N 80F I STW 8N 80 • m . . . . . Voss R dS oii Id 800 V 800 V 800 V < 1.2 Q < 1 .2 Q < 1 .2 0 8.2 A 5.1 A 8 2 A TYPICAL Ros(on) = 0.98 Q.

STE22N80

Abstract: STH8N80 E81743
Contextual Info: STE22N80 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE TYPE V DSS R DS on ID STE22N80 800 V < 0.4 Ω 22 A 4 • ■ ■ ■ ■ ■ ■ ■ ■ HIGH CURRENT POWER MODULE AVALANCHE RUGGED TECHNOLOGY (SEE STH8N80 FOR RATING) VERY LARGE SOA - LARGE PEAK POWER

8n80

Abstract: STW8N80 KT 0803 K
Contextual Info: £ STH8N80 FI STW8N80 SGS-THOMSON ï ULKgraMOeS j N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYP E STH 8N 80 STH 8N 80FI STW 8N80 • . . . . . . V dss RDS on Id 800 V 800 V 800 V < 1 .2 il 8.2 A 5. 1 A 8.2 A < 1 .2 il < 1 .2 Q TYPICAL RDS(on) = 0.98 £2

TDA0161 equivalent

Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:

schematic diagram dc-ac welding inverter

Abstract: schematic diagram dc-ac welding inverter CIRCUIT schematic diagram UPS schematic diagram welding inverter schematic diagram dc-ac inverter schematic diagram welding inverter control schematic diagram UPS 600 Power free high current smps circuit diagram BUZ71 application inverter irf840
Contextual Info: BUZ71 BUZ71FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ71 BUZ71FI • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V 50 V < 0.1 Ω < 0.1 Ω 18 A 12 A TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC

TSD45N50V

Abstract: TSD200N05V TSD40N55V TSD180N10V IRF540 TSD135N10V TSD150N10V TSD4M450V TSD17N100 TSD160N05V
Contextual Info: SELECTION GUIDE BY - PART NUMBER Type V BR DSS (V) ^DS(on) ^ Id max (A) (H) Package iD(max) (A) Ptot (W) Qfs min (S) Ciss max (pF) 850 2000 BUZ10 50 0.080 13.00 TO-220 20.0 85 6.00 BUZ11 BUZ11A BUZ11FI BUZ21 50 0.040 0.055 0.040 0.100 18.00 15.00 18.00 9.00

ste30na50

Abstract: STP3N60FI STE45N50 STHV82 stk2n50 ste24n90 STB55N06 ste38na50 STP55NE06FP STB40N03L-20
Contextual Info: SOT-223 VDSS RDS on max (V) (Ω) 30 0.05 0.06 0.12 0.12 0.12 0.27 0.45 1.50 20.0 60 100 200 800 Type STN4NE03L STN4NE03 STN3NE06 STN3NE06L STN3NE06L STN2N10 STN2NE10L ✠ STN1N20 STN1NB80 ✠ ID(cont) DEVICES (A) REPLACED 4.0 4.0 3.0 3.0 3.0 2.0 2.0 1.0

std2n52

Abstract: stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent
Contextual Info: POWER MOSFETS CROSS REFERENCE Industry standard 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1164 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205 2SK1231 2SK1232

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

IRF540 complementary

Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
Contextual Info: Sales type RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L RFP25N05 RFP14N05 HUF75344P3 HUF75344S3S HUF75345S3S HUF75345G3 HUF75343S3S HUF75307D3S HUF75344G3 HUF75345P3 HUF75343P3 HUF5343G3 HUF75321P3 HUF75329P3

YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509

Contextual Info: 7 ^ 2 3 7 □ D M S 7 CÌG E m •S6TH _ S i SCS-THOMSON E L iO M K S S T E 2 2 N 80 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE TYPE STE22N 80 V dss R dS oii b 8 00 V < 0 .4 Q 22 A . HIGH CURRENT POWER MODULE

STP3N60FI

Abstract: IRF540 complementary IRF640 complementary ste38na50 STE45N50 IRF630 complementary STP6NA80FP STD1NB60 IRF730 complementary ste24n90
Contextual Info: May ‘99 TO-220 VDSS RDS on max (V) (Ω) 30 0.004 0.006 0.01 0.012 0.0155 0.02 0.022 0.022 0.045 0.05 0.008 0.015 0.028 0.04 0.055 0.07 0.1 0.006 0.006 0.01 STP80NF03L-04 STP80NE03L-06 STP60NE03L-10 STP60NE03L-12 STP3015L STP40NE03L-20 STP40NF03L ✠ STP3020L

SSH6N80

Abstract: IRF640 equivalent buz100 equivalent ste38NA50 irf540 equivalent stp2na60 buz10 equivalent BUK444 equivalent 2SK2700 equivalent BUZ71 equivalent
Contextual Info: Power MOSFETs Cross Reference INDUSTY STANDARD 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1162 2SK1163 2SK1164 2SK1165 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205

TSD22N80V

Abstract: TSD22N80F transistor b 1185 STH8N80
Contextual Info: 3GE D • 7=12^537 QDBQSTM 3 TSD22N80F TSD22N80V SCS-THOMSON M G»Li D¥iiMa<gS s g s-thom son N _ CHANNEL ENHANCEMENT MODE _POWER MQS TRANSISTOR MODULE ADVANCE DATA TYPE V dss RDS(on Id T S D 22N 80F/V 800 V 0.4 n 22 A ■ HIGH VOLTAGE, HIGH CURRENT POWER

TSD45N50V

Abstract: TSD40N55V TSD33N50V TSD23N50V TSD30N60V TSD180N10V TSD160N05V TSD14N100V TSD4M450V TSD22N80V
Contextual Info: SELECTION GUIDE - BY PACKAGE ISOTOP 4 3 ? V BR DSS (V) R DS(on) ( m ax Id (A) Type (12) gis m in (S) Ciss m ax (pF) 7000 7000 7000 8100 18.0 400 310 8.0 8.0 5.0 9.0 9.0 30.0 40.0 400 500 15.0 28.0 8100 12000 * 45.0 45.0 500 500 350 28.0 28.0 28.0 12000