SDT33 Search Results

Contextual Info: SDT3307 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)52 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)10u÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

IDA1012

Abstract: 2SA10120 IDA1307 2SA12440 bd94 SOLITRON
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 - 10 >= 5 A, SDT3716 SDT3752 SDT3752 SDT3752 2N5974 MJ2267 2N4901 SDT3703 SDT3703 SDT3703 ~~H~~~ 15 20 SDT3712 SDT3715 SDT3715 SDT3715 SDT3775 SDT3775 SDT3775 SDT3305 ~gH~g~ 25 30 SDT3325 SDT3325 SDT3325 MJE2010

b940

Abstract: 101M D508
Contextual Info: Coilmaster Electronics Co., Ltd. 9F-3 No.398, Huan Bei Rd. Chung Li City, Taoyuan 320, Taiwan Tel : +886-3-422-8279 Fax : +886-3-422-8734 E-mail :info@coilmaster.com.tw Web Site : www.coilmaster.com.tw SDT3316 SERIES ~ Shielded SMD Power Inductors PART NUMBERING SYSTEM

triple insulated wire

Abstract: SDT28 SDT33 SDT38 SDT42 100KMZ
Contextual Info: ● Tr a n s f o r m e r ● Triple Insulated Wire type ◆Performance Output W F=100KMZ PINS SDT28 80 6✕6 SDT33 130 7✕7 SDT38 180 8✕8 SDT42 200 9✕9 Item Size ◆Features Triple insulated wire is used Small High efficieney Without barrier ◆Applications

2N5286 DATASHEET

Abstract: 2N5005 2N5286 SDT3775 2N5287 2N5003 2N5151 2N5153 2N5384 2N5385
Contextual Info: Device Type VCEO hFE V Min/Max @ IC (A) 2N5003 2N5005 2N5151 2N5153 2N5286 2N5287 2N5384 2N5385 2N5404 2N5405 2N5406 2N5407 2N5408 2N5409 2N5410 2N5411 2N5605 2N5607 2N5609 2N5611 2N5613 2N5615 2N5617 2N5619 2N6190 2N6192 SDT3301 SDT3302 SDT3303 SDT3304

Contextual Info: SDT3326 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)9.0 Maximum Operating Temp (øC) I(CBO) Max. (A).01m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: SDT3323 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)9.0 Maximum Operating Temp (øC) I(CBO) Max. (A).01m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: SDT3322 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)9.0 Maximum Operating Temp (øC) I(CBO) Max. (A).01m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

npn TRANSISTOR c105

Abstract: TRANSISTOR c104 c105 TRANSISTOR TRANSISTOR c105 s 271 5A c104 TRANSISTOR 2N3720 2N4901 2N4906 SDT3322
Contextual Info: ^outran i?K i5 ty) STr ättm=©( MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER Devices. Inc. PIMP EPITAXIAL PLANAR POWER TRANSISTOR* (FORMERLY 71) CONTACT METALLIZATION Base and emitter: > 30,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver” also available)

SDT3303

Contextual Info: SFT3303 Series Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 5 AMP PNP HIGH SPEED POWER TRANSISTOR 120 VOLTS DESIGNER’S DATA SHEET Part Number / Ordering Information

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

2NS604

Abstract: 2NS540 2NS154 SD716 SDT13305 2N5671 2N5005 SDT425 SDT7605 SDT96302
Contextual Info: -Jfolìtron P L A N A R P O W E R T R A N S IS T O R S Devices. Inc H DEVICE TYPE VCEO V hFE MIN/MAX 2N2387 2N2988 2N2S89 2N2990 2N2991 80 100 80 100 80 2N2992 2N2993 2N2994 2N3439 2N3440 ÎA M W P K M ic (A) PT MAX (W) CASE TYPE CHIP TYPE ic (A) 25/75 25/75

2N5286

Abstract: 2N5290 SOLITRON 2N5740 SDT13305 SDT3775 SDT85502 2N439S 2N5610 2N6562
Contextual Info: SOLITRON DEVICES INC ^ D eT| fl3t.flt.DE 0D0S7b5 7 l ~ T ' 3 3 - 0 / F ^ E x y K g T T a t m , © _ PLAN AR POWER TRAN SISTO RS § M&. DEVICE TYPE hpE MIN/MAX @ ic A VCE (sat) MAX (V) @ ic (A) *T MIN (MHz) PT

TRANSFORMER sanken catalog

Abstract: "EI CORE" AC reactor choke design 2825 transformer AC reactor choke EER 42 transformer pt sanken transformer type B PT SANKEN INDONESIA EER type bobbin EI 28 TRANSFORMER
Contextual Info: Reactor & Transformer Reactors Reactors meeting meeting the the new new standard standard for for harmonic harmonic current current are are already already available available from from Sanken. Sanken. Q R S Production Factory Sanken Electric Co.,Ltd. Kawagoe Plant JAPAN

Tr431

Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200

2N5672 solitron

Abstract: TU105-B01 2N5004 SDT55907 2N3658 TU201 TU108-B01 TU206-B01
Contextual Info: SOLITRON DEVICES INC K ¿eÆ liÊron _ r a Q i g H U ? © M M , ! Devices. Inc. DEVICE TYPE ito S P A C E FLIGHT PO W ER TRAIMSISTORS CONTROL DRAWING VCBO VOLTS VCEO VOLTS 2N5038 2N5074 2N5153 2N5539 2N5672 5203/009-01B 4203/022-01B

Contextual Info: 8 3 6 8 6 0 2 SOL ITRON D E V I C E S INC 95 D 0 2 8 9 5 D T~~33- ¿y D E | fl3bflL,D2 ODDaflTS 4 ^ P Q K gT T © A T M , © _ MEDIUM TO HIGH VOLTAGE, FAST SW ITCHING CHIP N U M BER D e v ic e s ' ln c PIMP EPITAXIAL PLANAR POW ER TRAN SISTO R* * FORMERLY 71

N5408

Abstract: SDT3324 N5404 2N5286 2N5609 2N5287 2n5601 2N5153 2N5333 2N5384
Contextual Info: 27 SILICON POWER TRANSISTORS CUR R E N T G A IN S A T U R A T IO f >1 VO LTA G ES @ TYPE NUMBER 5 CASE TYPE V CBO V AMP SILICON PNP V CEO V V EBO V h FE M IN . I M A X . V CE V I >C A V CE s V BE(s) V I V 'c A 1 ’b A Observe (—) Negative Polarity 2N5153

to-53

Abstract: TO111 2N5978 NPN
Contextual Info: POWER SILICON TRANSISTORS Item Number »C Part Number Manufacturer Type Max A V (BR)CEO on PD Max hFE fT ON) Min (Hz) r •CBO Max (A) Max (s) (CE)sat Max (Ohms) T Oper Package Style Max (°C) D vie s 20 Watts or More, (Cont'd) . . .5 . .10 . . . -15 -20

BD947

Abstract: to-53 a/TO111
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO (V) hFE fT ICBO Max Max toN Max ON) Min (Hz) (A) (s) PD r (CE)«at Toper Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 .15 .

2N3599

Abstract: 1b01
Contextual Info: -JoütroiI S P A C E FLIG H T P O W E R T R A N S IS T O R S POWER @ 100“C WATTS CASE TYPE 5.0 5.0 5.0 5.0 5.0 4.0 30.0 30.0 30.0 30.0 TO-5 TO-111 TO-111 T O - l ll / I T O -1 l l / I 5.0 5.0 2.0 2.0 2.0 5.0 4.0 4.0 4.0 TO-5 TO-5* TO-5 TO-5 TO-5 5.00 —

npn TRANSISTOR c105

Abstract: TRANSISTOR c105 TRANSISTOR c104 c104 TRANSISTOR c105 TRANSISTOR 2N4906
Contextual Info: -Jfclitron Devices. Inc. I F K ® y ¥ © Ä T T M ,® ® MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP N U M BER PIMP EPITAXIAL PLANAR POWER TRANSISTOR* * FORMERLY 71 CONTACT METALLIZATION Base and emitter: > 30,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver“ also available)

TO111

Abstract: 2SD189 to-53 2SC647 2SD772B
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO on PD hFE fT •CBO Max ON) Min (Hz) (A) r Max (s) Max (CE)sat Max (Ohms) Toper Max (°C) Package Style Devices 20 Watts or Mor , (Cont'd) . . . .5 -10 2SD772 2SD772A

TU201

Abstract: TU111-B01 2N3658 TO111 TU108-B01 TU208-B01 TU137-B01 2n5384 2N3599 S2N2658-1
Contextual Info: Device Type Control Drawing VCBO VCEO ES/B IC CONT. POWER @ 100º C. Case Type MILLIJOULE MAX. WATTS 5.0 4.0 TO-5 BOLTS BOLTS 150 100 150 90 2.00 20.0 175.0 TO-63 100 80 - 20.0 100.0 TO-63 100 100 80 80 - 20.0 5.0 100.0 4.0 TO-63 TO-5 150 100 - 5.0 30.0