S6036 Search Results

S6036

Abstract: S6036-01 SE-171
Contextual Info: PHOTODIODE Si PIN photodiode S6036 series B7 mm lens plastic package S6036 series is Si PIN photodiode molded into a plastic package with a B7 mm lens. Two types are available: S6036 of clear plastic package and S6036-01 of visible-cut package. Features Applications

Contextual Info: PHOTODIODE Si PINフォトダイオード S6036シリーズ f7 mmレンズ付プラスチックパッケージ f7 mmレンズ付プラスチックパッケージタイプのSi PINフォトダイオードです。透明タイプのS6036可視光カットタイプの

S6036

Abstract: S6036-01 011NM PINS6036
Contextual Info: PHOTODIODE Si PINフォトダイオード S6036シリーズ f7 mmレンズ付プラスチックパッケージ f7 mmレンズ付プラスチックパッケージタイプのSi PINフォトダイオードです。透明タイプのS6036可視光カットタイプの

Contextual Info: Si PIN Photodiodes 2 Dim ensional Type No. Active Area Effective Size Activo Arca (mm) (mm2) Package O utline (P.49,50) Peak Spectral Response Sensitivity W avelength Range Ap A (nm) Ap S2506-04 2 .7 7 X 2 .7 7 a t\ 7.7 0.37 960 800 to 1100 920 320 to 1060

mips r4000 pin diagram

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT V r4300 , V r4305™, V r4310™ 64-BIT MICROPROCESSOR The ¿¡PD30200-100, 30200-133 V r4300 , 30200-80 (V r4305), and 30210 (V r4310) are high-perform ance, 64bit RISC (Reduced Instruction Set Com puter) type m icroprocessors em ploying the RISC architecture developed by

S2973-01

Abstract: S3590-01 S5573 S6775 S1223 S1223-01 SS077 S3590 S5077 S6968
Contextual Info: Si PIN Photodiodes 1 Dimensional Outline Type No. (P.46)/ Window Material ‘ 1 S5821 Active E f f e c t iv e Package ¡Area Size (mm) s Pe c tra l Response Range Area x ! xp (mm2) (nm) ¡ (nm) Short Circuit Current Photo Sensitivity S (A W ) T Peak Active

ir remote power meter

Abstract: spectrophotometer G1746
Contextual Info: Selection Guide Spectral Response Range nm 400 600 800 1000 200 _l I I I Feature Major Application Type No. 1200 I I 1 Listed : Pa9e Si Photodiodes 190 1100 190 1000 320 1100 320 UV to IR range, for precision photometry

S3407

Abstract: S4036 S5533
Contextual Info: Dimensional Outlines Unit : m m O S1226-18BQ, etc. 0 S1190-01, etc. 0 S2386-18L # 5 4 -0 2 WI NDOW iy o *o¿ ^ 4 PS > 0 j o 0 S5531, S5532, S5533 0 S2216-01, etc. O S1190-13 2 ^ r> 4 t ü i- 4 fih ‘ :i i V* 4 6>cj • 0 1 : o -cP -l: • > *'<i Y", 5 K 1 y jtj ¡Inirosiln . it«- ijl.iss!

S6018

Abstract: S6008 S6017 S-6037 S6010 S6029 S6046 s6016 S6022 S6047
Contextual Info: S6000 Series MIL-STD-981 Fixed Chip Inductors for Space Applications M83446/6 -01 to –48 With tabs FEATURES Military QPL Approved. Pick-and-place compatible. SPECIFICATIONS Met the requirements of MIL-PRF83446 and MIL-STD-981, class S or class B. Class S parts are intended for critical

Si1403DL

Abstract: Si1403DL-T1 SOT-363 MARKING CODE OA
Contextual Info: Si1403DL Vishay Siliconix New Product P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 25 rDS(on) (Ω) ID (A) 0.180 at VGS = - 4.5 V ± 1.5 0.200 at VGS = - 3.6 V ± 1.4 0.265 at VGS = - 2.5 V ± 1.2 • TrenchFET Power MOSFET Pb-free Available

GaP photodiode APD

Abstract: uv photodiode, GaP GaP photodiode PIN S-4036 UV photodiode PIN Photodiode S3590 GaP photodiode schottky photodiode
Contextual Info: Index by Type No Type No. Name Page S1087. .Si Photodiode Visible/Visible to IR Range, tor General Photometry . 22, 23 S1087-01 . .Si Photodiode (Visible/Visible to IR Range, for General Photometry). 22, 23

Contextual Info: Si PIN Photodiodes 3 Dimensional Type No. Outline Effective ! Spectral ! Response c e Range Area j Active Area Package Size : (P.53, 54) ; (mm) ! i S5052 ——— -.- 4)3.0 S5573 (mm2) 7.0 S6977-01 Peak j Sensitivity Wavelength Xp Photo Sensitivity S (A/W)

SUD50N04-07-E3

Abstract: SUD50N04-07
Contextual Info: SUD50N04-07 Vishay Siliconix New Product N-Channel 40-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 40 rDS(on) (Ω) ID (A) 0.0074 at VGS = 10 V 65 0.011 at VGS = 4.5 V 54 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • Low Threshold

Contextual Info: Si1403DL Vishay Siliconix New Product P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 25 rDS(on) (Ω) ID (A) 0.180 at VGS = - 4.5 V ± 1.5 0.200 at VGS = - 3.6 V ± 1.4 0.265 at VGS = - 2.5 V ± 1.2 • TrenchFET Power MOSFET Pb-free Available

rlcelectronics

Abstract: Delta Electronics dps 600 Delta Electronics dps 500 Delta Electronics dps 670 db Delta Electronics dps 250 db "Delta Electronics" dps 800 str 6052 Delta Electronics dps 250 Delta Electronics dps 350 str w 6052
Contextual Info: Micro Miniature and Surface Mount Low Pass Filters RLC Electronics' Micro Miniature Low Pass Filters utilize proprietary dielectric materials and manufacturing techniques to achieve performance rivaling much larger devices. Standard units are 0.05dB Chebychev

MDM 6600

Abstract: mt 1389 de 2061 D nikko AR9344 bosch AL 1115 CV denso alternator 7805/3A bosch al 1450 dv CATERPILLAR 207-1560 ba 4918
Contextual Info: No. 9800-OERF-007 Replaces • Remplace • Substituye No. 9800-OERF-005 Dixie Electric Ltd. OEM CROSS REFERENCE GUIDE DE RÉFÉRENCE GUÍA DE REFERENCIA 2007 Index • Índice AGCO .1

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT /¿PD78P356 A 16 BIT SIN G L E -C H IP M IC R O C O M P U T E R The /iPD78P356(A) is produced by replacing the internal mask R O M of the pPD78356(A) with a one-time PROM. One-time P R O M products, in which data can be written once are effective for manufacture of small quantities of

MIL-S-3928

Abstract: S6078 S-6064 S6052 s6064 S6050
Contextual Info: QPL Approved Switches RLC Electronics, Inc. a manufacture of high Quality mechanical Switches for over 40 years, is also Qualified to MIL-S-3928/xx-xx on the following part numbers: RLC Part Numbers Per MIL-S-3928 Cross Reference Table QPL P/N SLASH NO. OPTION NO.

Contextual Info: Index by Type No. T yp e No Nam e Page S 1 0 8 7 . . Si P h o to d io d e V isible / V is ib le to IR R ange, T ype No S 1 3 3 6 -5 B K . Si P h o to d io d e (U V to IR R ange, fo r P re cisio n P h o to m e tr y . 14, 15

photodiode

Abstract: schottky photodiode uv photodiode, GaP GaP photodiode APD Si PIN PHOTODIODE uv photodiode Si apd photodiode 800 nm GaP photodiode PIN 38 PHOTODIODE
Contextual Info: Index by Type No. Type No. Name Page S 1087. .Si Photodiode Visible/Visible to IR Range, for General Photometry . . 22, 23 S 1087-01 . .Si Photodiode (Visible/Visible to IR Range, for General Photometry). 22, 23

Contextual Info: Si PIN Photodiodes with Lens Plastic Package Tyoe B o . •. ^ tern Package Photo S s n i n v lv y -y k 3 .8 x 4 .8 S 5573 ' C A ftd ftd tu ■ ■ Area ' s U p w it h le n s Ò 7.0 S 6436 3 2 0 to 1 0 0 0 800 0 46 3 2 0 to 1 0 6 0 920 0.53 960 0 56 TO ,vr>. i;.' Vi

Contextual Info: NEC ¿¿PD30200, 30210 10. RECOMMENDED SOLDERING CONDITIONS S olderin g th is p ro d u ct under the fo llow ing so ld e rin g c o n d itio n s is recom m ended. For the d e ta ils of the reco m m e n d e d so ld e rin g co n d itio n s, refer to in fo rm a tio n d o cu m e n t S e m ic o n d u c to r

SUD50N04-07-E3

Abstract: SUD50N04-07 73790 SUD50N04
Contextual Info: SUD50N04-07 Vishay Siliconix New Product N-Channel 40-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 40 rDS(on) (Ω) ID (A) 0.0074 at VGS = 10 V 65 0.011 at VGS = 4.5 V 54 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • Low Threshold

Contextual Info: Between-Seriee Adaptors .J V M ._ _ h m ^ < - u a p ifl -82 o n e P a rtN u m b a r M /A-COM P a ri N um bar 8801814PP-11 3180-4034-021 316&4036-02> •801814FP-8* 3184-4002-11 3081-400202 3082402202 3080401402 8S01814PP-8 •8044128P-1