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    SUD50N04 Datasheets (14)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SUD50N04-05L
    		Vishay Siliconix MOSFETs Original PDF 70.18KB 4
    SUD50N04-05L-E3
    		Vishay Siliconix N-Channel 40-V (D-S), 175°C MOSFET Original PDF 70.19KB 4
    SUD50N04-05L-E3
    		Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 115A TO252 Original PDF 5
    SUD50N04-06H
    		Vishay Siliconix MOSFETs Original PDF 58.94KB 5
    SUD50N04-07L
    		Vishay Siliconix MOSFETs Original PDF 71.45KB 5
    SUD50N04-07L SPICE Device Model
    		Vishay N-Channel 40-V (D-S) 175°C MOSFET Original PDF 178.64KB 3
    SUD50N04-09
    		Vishay N-Channel 40-V (D-S), 175°C MOSFET Original PDF 74.17KB 5
    SUD50N04-09H
    		Vishay Siliconix MOSFETs Original PDF 62.34KB 5
    SUD50N04-09H-E3
    		Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 50A TO252 Original PDF 6
    SUD50N04-09 SPICE Device Model
    		Vishay N-Channel 40-V (D-S) 175°C MOSFET Original PDF 177.63KB 3
    SUD50N04-16P-E3
    		Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 9.8A TO252 Original PDF 10
    SUD50N04-25P
    		Vishay Siliconix N-Channel 40-V (D-S) 175°C MOSFET Original PDF 194.68KB 3
    SUD50N04-37P-T4-E3
    		Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 5.4A TO252 Original PDF 9
    SUD50N04-8M8P-4GE3
    		Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 14A TO-252 Original PDF 9
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    SUD50N04 Price and Stock

    Vishay Intertechnologies

    Vishay Intertechnologies SUD50N04-8M8P-4GE3

    Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 14A; Idm: 100A
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    TME SUD50N04-8M8P-4GE3 509 1
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    Verical () SUD50N04-8M8P-4GE3 509 47
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    SUD50N04-8M8P-4GE3 176 17
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    Avnet Americas () SUD50N04-8M8P-4GE3 Tape & Reel 12,500 52 Weeks 2,500
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    SUD50N04-8M8P-4GE3 Tape & Reel 2,500
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    SUD50N04-8M8P-4GE3 Ammo Pack 1
    • 1 $2.50
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    Mouser Electronics SUD50N04-8M8P-4GE3 209
    • 1 $2.50
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    • 100 $1.09
    • 1000 $0.80
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    Arrow Electronics SUD50N04-8M8P-4GE3 Cut Strips 176 52 Weeks 1
    • 1 $0.77
    • 10 $0.67
    • 100 $0.48
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    Newark () SUD50N04-8M8P-4GE3 Cut Tape 28,360 1
    • 1 $2.48
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    • 1000 $0.92
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    SUD50N04-8M8P-4GE3 Tape & Reel 28,360 100
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    SUD50N04-8M8P-4GE3 Tape & Reel 2,500 2,500
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    TTI SUD50N04-8M8P-4GE3 Reel 2,500 2,500
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    Bristol Electronics SUD50N04-8M8P-4GE3 710
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    Quest Components () SUD50N04-8M8P-4GE3 1,992
    • 1 $0.85
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    SUD50N04-8M8P-4GE3 1,992
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    Avnet Asia SUD50N04-8M8P-4GE3 54 Weeks 2,500
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    EBV Elektronik SUD50N04-8M8P-4GE3 10,000 53 Weeks 2,500
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    Vishay Intertechnologies SUD50N04-8M8P-4BE3

    Transistor MOSFET N-Channel 40V 50A 3-Pin TO-252 - Tape and Reel (Alt: SUD50N04-8M8P-4BE3)
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    Avnet Americas SUD50N04-8M8P-4BE3 Tape & Reel 2,500
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    Newark () SUD50N04-8M8P-4BE3 Cut Tape 2,500
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    SUD50N04-8M8P-4BE3 Tape & Reel 2,500
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    TTI SUD50N04-8M8P-4BE3 Reel 20,000 2,500
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    Vishay Intertechnologies SUD50N04-09H-E3

    MOSFETs 40V 50A 83.3W 9.0mohm @ 10V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SUD50N04-09H-E3
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    Vishay Intertechnologies SUD50N04-07L-E3

    MOSFETs 40V 65A 65W 7.4mohm @ 10V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SUD50N04-07L-E3
    • 1 -
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    Vishay Intertechnologies SUD50N04-06H-E3

    MOSFETs 40V 109A 136W 6.0mohm @ 10V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SUD50N04-06H-E3
    • 1 -
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    SUD50N04 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    SUD50N04-13P-E3

    Abstract: marking 13P suu50n04-13
    Contextual Info: SUU/SUD50N04-13P Vishay Siliconix New Product N-Channel 40-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.013 at VGS = 10 V 20 0.0155 at VGS = 4.5 V 20 VDS (V) 40 Qg (Typ) • TrenchFET Power MOSFET • 100 % Rg & UIS Tested RoHS


    Original     		suu/sud50n04-13po-251o-252sud50n04-13p-e3+4suu50n04-13p-e308-apr-05marking 13psuu50n04-13 PDF

    Contextual Info: SUD50N04-10P Vishay Siliconix N-Channel 40-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.010 at VGS = 10 V 20 0.012 at VGS = 4.5 V 20 VDS (V) 40 Qg (Typ.) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS 30 nC COMPLIANT


    Original     		sud50n04-10po-252sud50n04-10p-e32002/95/ec+32011/65/eujs709a02-oct-12 PDF

    Contextual Info: SUD50N04-06P Vishay Siliconix N-Channel 40-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A)a 0.0065 at VGS = 10 V 20 0.008 at VGS = 4.5 V 20 Qg (Typ.) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS 53.6 nC COMPLIANT


    Original     		sud50n04-06po-252sud50n04-06p-e325electronic+42002/95/ec2011/65/eujs709a02-oct-12 PDF

    sud50n04-8m8p

    Abstract: SUD50N04-8m8P-4GE3 diode 50A
    Contextual Info: SUD50N04-8m8P Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0088 at VGS = 10 V 50 0.0105 at VGS = 4.5 V 50 VDS (V) 40 Qg (Typ.) 16 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		sud50n04-8m8p2002/95/eco-252sud50n04-8m8p-4ge3+218-jul-08diode 50a PDF

    68B50

    Contextual Info: New Product SUU/SUD50N04-16P Vishay Siliconix N-Channel 40-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a, c 0.016 at VGS = 10 V 20 0.018 at VGS = 4.5 V 20 VDS (V) 40 Qg (Typ) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original     		suu/sud50n04-16po-251o-252sud50n04-16p-e3+3suu50n04-16p-e308-apr-0568b50 PDF

    SUD50N04

    Contextual Info: SPICE Device Model SUU/SUD50N04-16P Vishay Siliconix N-Channel 40-V D-S 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		suu/sud50n04-16ps-70955rev14-may-07sud50n04 PDF

    74443

    Contextual Info: SUD50N04-06P Vishay Siliconix N-Channel 40-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A)a 0.0065 at VGS = 10 V 20 0.008 at VGS = 4.5 V 20 Qg (Typ.) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS 53.6 nC COMPLIANT


    Original     		sud50n04-06po-252sud50n04-06p-e318-jul-08+174443 PDF

    Contextual Info: SUD50N04-09H Vishay Siliconix N-Channel 40-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A)c Qg (Typ) 40 0.009 at VGS = 10 V 50 55 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • High Threshold Voltage At High Temperature


    Original     		sud50n04-09ho-252sud50n04-09h-e308-apr-05 PDF

    Contextual Info: SUD50N04-10P Vishay Siliconix N-Channel 40-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.010 at VGS = 10 V 20 0.012 at VGS = 4.5 V 20 VDS (V) 40 Qg (Typ.) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS 30 nC COMPLIANT


    Original     		sud50n04-10po-252sud50n04-10p-e311-mar-11 PDF

    Contextual Info: New Product SUU/SUD50N04-08P Vishay Siliconix N-Channel 40-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.008 at VGS = 10 V 20 0.010 at VGS = 4.5 V 20 VDS (V) 40 Qg (Typ) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS


    Original     		suu/sud50n04-08po-251o-252sud50n04-08p-e3+2suu50n04-08p-e308-apr-05 PDF

    SUD50N04-06H

    Contextual Info: SPICE Device Model SUD50N04-06H Vishay Siliconix N-Channel 40-V D-S 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		sud50n04-06h18-jul-08 PDF

    Contextual Info: SPICE Device Model SUU/SUD50N04-10P Vishay Siliconix N-Channel 40-V D-S 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		suu/sud50n04-10p18-jul-08 PDF

    datasheet 6821

    Abstract: transistor 6821 AN609 SUD50N04-06H
    Contextual Info: SUD50N04-06H_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		sud50n04-06han60910-sep-07datasheet 6821+1transistor 6821 PDF

    Contextual Info: SUD50N04-16P Vishay Siliconix N-Channel 40-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A)a, c 0.016 at VGS = 10 V 20 0.018 at VGS = 4.5 V 20 Qg (Typ.) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS 15.6 nC COMPLIANT


    Original     		sud50n04-16po-252sud50n04-16p-e32002/95/ec+32011/65/eujs709a02-oct-12 PDF

    SUD50N04-09

    Abstract: SUD50N04
    Contextual Info: SUD50N04-09 Vishay Siliconix New Product N-Channel 40-V D-S , 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) 40 0.009 @ VGS = 10 V ID (A)c D TrenchFETr Power MOSFETS D 175_C Junction Temperature 50 APPLICATIONS D Automotive − ABS − High-Side Switch


    Original     		sud50n04-09o-252sud50n04-09--e3s-32679--rev+229-dec-03sud50n04 PDF

    Contextual Info: SUD50N04-8m8P Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0088 at VGS = 10 V 50 0.0105 at VGS = 4.5 V 50 VDS (V) 40 Qg (Typ.) 16 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		sud50n04-8m8p2002/95/eco-252sud50n04-8m8p-4ge3+22011/65/eu12-mar-12 PDF

    68B50

    Contextual Info: SUD50N04-16P Vishay Siliconix N-Channel 40-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A)a, c 0.016 at VGS = 10 V 20 0.018 at VGS = 4.5 V 20 Qg (Typ.) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS 15.6 nC COMPLIANT


    Original     		sud50n04-16po-252sud50n04-16p-e311-mar-11+168b50 PDF

    SUD50N04-07L

    Contextual Info: SPICE Device Model SUD50N04-07L Vishay Siliconix N-Channel 40-V D-S 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		sud50n04-07ls-60676rev01-may-06 PDF

    Contextual Info: SUD50N04-8m8P Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0088 at VGS = 10 V 50 0.0105 at VGS = 4.5 V 50 VDS (V) 40 Qg (Typ.) 16 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		sud50n04-8m8p2002/95/eco-252sud50n04-8m8p-4ge3+22011/65/eu12-mar-12 PDF

    SUD50N04-37P

    Contextual Info: New Product SUD50N04-37P Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.037 at VGS = 10 V 8 0.046 at VGS = 4.5 V 8 VDS (V) 40 Qg (Typ.) • TrenchFET Power MOSFET • 100 % UIS Tested RoHS 5.3 nC COMPLIANT APPLICATIONS


    Original     		sud50n04-37po-252sud50n04-37p-e32002/95/ec+32011/65/eujs709a02-oct-12 PDF

    Contextual Info: SUD50N04-10P Vishay Siliconix N-Channel 40-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.010 at VGS = 10 V 20 0.012 at VGS = 4.5 V 20 VDS (V) 40 Qg (Typ.) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS 30 nC COMPLIANT


    Original     		sud50n04-10po-252sud50n04-10p-e32011/65/eu+22002/95/ec12-mar-12 PDF

    Contextual Info: SUD50N04-06P Vishay Siliconix N-Channel 40-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A)a 0.0065 at VGS = 10 V 20 0.008 at VGS = 4.5 V 20 Qg (Typ.) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS 53.6 nC COMPLIANT


    Original     		sud50n04-06po-252sud50n04-06p-e320chay+111-mar-11 PDF

    Contextual Info: New Product SUD50N04-07L Vishay Siliconix N-Channel 40-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)c 0.0074 at VGS = 10 V 65 0.0011 at VGS = 4.5 V 54 V(BR)DSS (V) 40 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • Low Threshold


    Original     		sud50n04-07lo-25208-apr-05 PDF

    Contextual Info: SUD50N04-8m8P Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0088 at VGS = 10 V 50 0.0105 at VGS = 4.5 V 50 VDS (V) 40 Qg (Typ.) 16 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		sud50n04-8m8p2002/95/eco-252sud50n04-8m8p-4ge3+111-mar-11 PDF