S2551 Search Results

Contextual Info: PHOTODIODE Si photodiode S2551 For visible to infrared precision photometry S2551 is a Si photodiode having a long active area of 1.2 x 29.1 mm, designed for visible to infrared precision photometry. Features Applications l Long, narrow active area: 1.2 × 29.1 mm

Contextual Info: Si photodiode S2551 For visible to infrared precision photometry S2551 is a Si photodiode having a long active area of 1.2 x 29.1 mm, designed for visible to infrared precision photometry. Features Applications Long, narrow active area: 1.2 × 29.1 mm Analytical instruments

S2551

Abstract: SE-171
Contextual Info: PHOTODIODE Si photodiode S2551 For visible to infrared precision photometry S2551 is a Si photodiode having a long active area of 1.2 x 29.1 mm, designed for visible to infrared precision photometry. Features Applications l Long, narrow active area: 1.2 × 29.1 mm

S2551

Contextual Info: PHOTODIODE Siフォトダイオード S2551 可視~赤外精密測光用 S2551は 1.2 x 29.1 mmの1次元に広い受光部をもつ、 可視∼赤外精密測光用Siフォトダイオードです。 特長 用途 l 長尺受光面サイズ: 1.2 × 29.1 mm

Contextual Info: Siフォトダイオード S2551 可視～赤外精密測光用 S2551は1.2 x 29.1 mmの1次元に広い受光部をもつ、可視～赤外精密測光用Siフォトダイオードです。 特長 用途 長尺受光面サイズ: 1.2 × 29.1 mm 分析機器

Contextual Info: PHOTODIODE Si photodiode S2551 For visible to infrared precision photometry S2551 is a Si photodiode having a long active area of 1.2 x 29.1 mm, designed for visible to infrared precision photometry. Features Applications l Long, narrow active area: 1.2 × 29.1 mm

S2551

Abstract: SE-171
Contextual Info: PHOTODIODE Si photodiode S2551 For visible to infrared precision photometry S2551 is a Si photodiode having a long active area of 1.2 x 29.1 mm, designed for visible to infrared precision photometry. Features Applications l Long, narrow active area: 1.2 × 29.1 mm

Contextual Info: 0003b2fi HSt HPKJ PIN Silicon Photodiodes 3 Range Peak Sensitivity Wavelength À A p (nm) (nm) Spectral Dimensional Type No. Outline Package (P.42,43) Active Area Effective Size Active Area (mm) ( m m 2) 2.77X2.77 7.7 S2506-02 • S2506-04 S4707-01 S5077

G1125-02

Abstract: S2216 02 S1863 G1126-02
Contextual Info: HAMAMATSU CORP ITE D • 422^0^ 00G2534 1 ■ GaAsP Photodiodes Photosensitive Surface Spectral Response Typical Radiant Sensitivity A/W Outlines Type No. Window Materials Characteristics (25°C) Package (mm) Size Effective Area Range Peak Wave­ length

near IR photodiodes

Abstract: S8745-01 S8558
Contextual Info: Selection guide - February 2014 Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation HAMAMATSU PHOTONICS K.K. S i P h o t o d i o d e Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation Si photodiode package •··················································· 5

hamamatsu S875

Abstract: S1190-01 S1188-02 S2387-16R 900nm LED S2506 S1190 hamamatsu S1721 S2216 02 Hamamatsu S1133
Contextual Info: HAMAMATSU CORP n E Silicon Photodiodes Type No. D • ‘JHST b G ' i 0 0 G S S 24 Visible Light to IR, for Precision Photometry Photosensitive Surface Spectral Response Out­ line Package (mm) «J Characteristics (25°C) Radian Sensitivity (A/W) Size

C2719

Abstract: S1190-01 s1223 pin photodiode S4160 equivalent s12271010b S4753 S3407-01 hamamatsu S1336 S4160 G1118
Contextual Info: MHE'ìbCH 0 G03 b S l fi 3 T • HPKJ PHOTO ICs A photodiode and signal processing circuit are integrated. Photo ICs are intelligent light sensors consisting of a photodiode, signal processing circuit and signal output circuit. Molded in subminiature packages, these photo ICs are especially suited for

KUN10

Abstract: bu2027 P50B1 8731 DIN42802-1 S25H4G tape 3m 467 4mm banana plug socket 013-1000-040FB9 PKI-10A
Contextual Info: 1879 Technical portal and online community for Design Engineers - www.element-14.com Connectors - Test Page 1mm Plugs and Sockets . . . . . . . . . . . . . . . . . . . . 2mm Plugs and Sockets . . . . . . . . . . . . . . . . . . . . 3mm Connectors . . . . . . . . . . . . . . . . . . . . . . . . . .

P25-0822

Abstract: S25-022 S25-212 S25-512
Contextual Info: Customer Information Sheet DRAWING No.: S 25 -X X 2 SHEET 2 OF 2 I IF IN DOUBT - ASK T1TT NOT TO SCALE 18.50 - THIRD ANGLE PROJECTION A L L DIMENSIONS IN mm •5.20- J SOLDER CUP - - S25-022 LLJ Cd < CO CD n Si is 3 O CO oo si­ to <s> WIREWRAP TAIL ~ !

S1722-01

Abstract: S1723-04 S1723-06 S1723-08 S-1721 S1721 S1863 G1117 si7202 S2164-01
Contextual Info: HAMAMATSU CORP 11E D • 452=^0= Q G G 2 S 3 0 4 ■ T ^ m - 6 3 PIN Silicon Photodiodes Photosensitive Surface Spectral Response Characteristics at 25°C) Radiant Sensitivity Typ. (A/W) Outlines Type No. Features S1722 2.54mm dia. sensitive area, for visible to IR

S3407

Abstract: S4036 S5533
Contextual Info: Dimensional Outlines Unit : m m O S1226-18BQ, etc. 0 S1190-01, etc. 0 S2386-18L # 5 4 -0 2 WI NDOW iy o *o¿ ^ 4 PS > 0 j o 0 S5531, S5532, S5533 0 S2216-01, etc. O S1190-13 2 ^ r> 4 t ü i- 4 fih ‘ :i i V* 4 6>cj • 0 1 : o -cP -l: • > *'<i Y", 5 K 1 y jtj ¡Inirosiln . it«- ijl.iss!

3365bq

Abstract: SI336
Contextual Info: Si Photodiodes Type No. iDimensional I Outline Package P.40-44 / Window Material* (mm) (UV to IR Range, for Precision Photometry) Active Effective Spectral Area Size Active Response Area Range Peak Sensitivity Wavelength Ap (mm2) (nm) (nm) (mm) Photo Sensitivity S (A/W)

Harwin spring P19

Abstract: 4026 datasheet P13-0123 S13-503 concave P13-1123 P25-1223 DATASHEET 4026 P1113CV2 P1113SS2
Contextual Info: Spring Probes • Full technical details are available from our website: www.harwin.com One Part Spring Probes P1113CA2 Concave Radius Head 3.00mm Centre P1342-CA Concave Head 6.00mm Centre P1113CV2 Convex Radius Head 3.00mm Centre P25-7017 Needle Head 2.54mm Centre

S5532

Contextual Info: GGG3bEb bfl3 • HPKJ PIN Silicon Photodiodes 2 Dimensional Outline Type No. Package Window Material* S4280 O /K S5531 O /L 3-pin T O -1 8 with lens S4752 O /K 3-pin T O -1 8 S4753 ^ S5533 * Effective Size Active Area (mm) (mm!) ¿ 0 .8 0.5 Peak Spectral

S1723-06

Abstract: S1722-01 S1190-01 PD46 BZZ16 S1223-01 s1188 S1723 S1723-04 S1723-08
Contextual Info: - 260- m & i± 7t % II min \ ßA E mW cm2 IE % • ± ^ Bi -fit 1i Ei Üx5 vK v: ln max inA; Vk !V; iß ft 14 j. ly typ (nmi 'T„ = 25'C) i r „ = 25*C' t, typ i/£S) ft- öi 3% 7 Ra fsj n R,. iß! Vk iV; Cr typ ;pF' VK iV': VK (V) T., ff; i* T O -18

S1336-5BQ

Abstract: S1337-33BR
Contextual Info: Si Photodiodes UV to IR Range, for Precision Photometry Type No. Dimensional Effective Active Outline Package Active (P.46 to 49)/ Area Size Area Window Material ' 1 (mm) (mm) (mm2) Spectral Response Range X Peak Sensitivity Wavelength Ap (nm) (nm) Short Circuit

GaP photodiode APD

Abstract: uv photodiode, GaP GaP photodiode PIN S-4036 UV photodiode PIN Photodiode S3590 GaP photodiode schottky photodiode
Contextual Info: Index by Type No Type No. Name Page S1087. .Si Photodiode Visible/Visible to IR Range, tor General Photometry . 22, 23 S1087-01 . .Si Photodiode (Visible/Visible to IR Range, for General Photometry). 22, 23

S1337-1010BQ

Abstract: S1337-33BQ
Contextual Info: Si Photodiodes UV to IR Range, for Precision Photometry ! Dim ensional Type No. j . I . Actjve Effective O utline Package 1 ! Active (P.46 to 49)/; ;Area Size ] Afea W indow ! i M a te ria l-1 ; : (mm) ! (mm) ' I (mm2) Spectral Response Range X

Contextual Info: HAMAMATSU CÔRP ITE D • 452^01 0GG5532 A ■ GaAsP Photodiodes Photosensitive Surface Spectral Response Outlines Type No. Window Materials Package mm Size Effective Area Range Peak Wave­ length (mm) (mm2) (nm) (nm) Characteristics (25°C) Typical Radiant Sensitivity (A/W) Short Circuit Current