S1217 Search Results

S1217

Abstract: 8-bit parallel/serial transceiver SDH -209
Contextual Info: S1217 Serial OC-3/12 - to - 8 Bit Transceiver P RODUCT BR IE F The S1217 transceiver provides a fully integrated serialization/de-serialization device that performs all necessary parallel-to-serial and serial-to-parallel functions in conformance with SONET/SDH transmission standards. The S1217 receive

ocp sfp

Abstract: SFP LVDS S1217 AMCC S1204 amcc SCP6* SFP S1217
Contextual Info: PRODUC T BRIEF S121 7 S1217 OC-3/12 SONET/SDH 8-bit Transceiver Features Description AMCC Suggested Interface Devices • CMOS 0.13 micron technology • Complies with Bellcore and ITU-T specifications for jitter tolerance, jitter transfer, and jitter generation

SFP LVDS

Abstract: S1217 ocp sfp TRPN03 FTRJ1322P1 SCP6802-GL HFBR-5908E S1201 S1202 S1204
Contextual Info: PRODUC T BRIEF icro liedM App S1217 S1217 OC-3/12 SONET/SDH 8-bit Transceiver Features Description AppliedMicro Suggested Interface Devices • CMOS 0.13 micron technology • Complies with Bellcore and ITU-T specifications for jitter tolerance, jitter transfer, and jitter generation

BTB04-600SAP

Abstract: S0817MH S1217NH BTA12-700BW BTB04 600SAP BTB04-600SAP equivalent BTB06-700SW btb04600sap s1217mh BTA06-400GP
Contextual Info: Thyristors 4-Quadrant Triacs - continued 4-Quadrant Triacs - continued Thyristors ST Microelectronics Cross Reference Guide Silicon Controlled Rectifiers SCRs - continued VDRM (V) IGT (mA) Package ST Part NXP Part 800 35/35/35/70 SOT78 / TO220AB Z0109NN

si88

Abstract: SI8808DB-T2-E1 si8808
Contextual Info: New Product Si8808DB Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () Max. ID (A)a 0.095 at VGS = 4.5 V 2.5 0.105 at VGS = 2.5 V 2.3 0.120 at VGS = 1.8 V 2.2 0.165 at VGS = 1.5 V 1.9 • • • • • Qg (Typ.)

Contextual Info: SiHP24N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 122 Qgs (nC) 21 Qgd (nC) • • • • • 0.145

si8489

Contextual Info: Si8489EDB Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES • TrenchFET Power MOSFET PRODUCT SUMMARY RDS(on) () Max. ID (A)a, e 0.044 at VGS = - 10 V - 5.4 0.054 at VGS = - 4.5 V - 4.9 0.082 at VGS = - 2.5 V - 3.9 VDS (V) - 20 Qg (Typ.) 9.5 nC • Material categorization:

Contextual Info: Si3585CDV Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () Max. • TrenchFET Power MOSFETs • 100 % Rg Tested • Material categorization: For definitions of compliance please see

gms84512

Abstract: hyundai gms SERVICE MANUAL tv hyundai 29" 3001H dmss GMS84524 S122500 remocon mcu SERVICE MANUAL tv hyundai HA-003
Contextual Info: NOV. 1996 Rev. 2.1 8-BIT SINGLE CHIP MICROCOMPUTER GMS84512 / 84524 USER’S MANUAL HYUNDAI MicroElectronics GMS84512/84524 USER’S MANUAL Table of Contents 1. Overview 2. CPU 3. Peripheral Function 4. Control Function 5. Support Tool 6. Appendix 1. Overview

QT2225

Abstract: qt2025 s4886 S10124 G.975.1 QT2225-1 S4882 S4884 QT2025-1 S19262
Contextual Info: Transport Products Product Selector Guide Table of Contents Physical Layer Devices Framer/Mappers Datacom PHY S19225

qt2025

Abstract: QT2225 QT2225-1 S4886 QT2025-1 S19262 AMCC S4882 S4882 S19258 S19233
Contextual Info: ɈɩɳȹɝĘɈअౠ Product Selector Guide ȹȤɃɁ ɕȡɖɪɃȯ ɕɬĘɞɞɃɑ ɇĘȿȳɠǗȕȀ Ɇɬȳɠಞซॾ PHY ɇɐȤȹ Product Selector Guide ࠖซþ૟ঝþࡼ೧ȹɈɬĘȸǻ ۛ‫ژ‬ǻȽɪɥĘȷɧɳȟળԽ ɍɃɈɯĘȯ ȳɳɐĘȸȧɳȹ ɈɪɗɫɗɬȤ

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

Contextual Info: SiHG24N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 122 Qgs (nC) 21 Qgd (nC) • • • • • 0.145

TDA0161 equivalent

Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:

Contextual Info: TN2404K/TN2404KL/BS107KL Vishay Siliconix N-Channel 240 V D-S MOSFET FEATURES PRODUCT SUMMARY Part Number VDS (V) RDS(on) () VGS(th) (A) 240 4 at VGS = 10 V 0.8 to 2 ID (A) 0.2 TN2404K TN2404K, BS107KL • • • • • Qg (Typ.) 0.3 4.87 nC Low On-Resistance: 4 

TYN604 scr

Abstract: scr TYN604 BTW69-1000N TYN656 X0405XF tyn610 TYN116 tyn112 TYN256 TN1625-800G
Contextual Info: SCR & TRIAC SCRs D2PAK DPAK SOT 223 SOT23 SURFACE MOUNT SCRs Tj max = 125 °C except TS820-xxxB and TS420-xxxB: 110 °C Type IT(RMS) Ta (1) Tl (2) Tc (3) Ttab (4) (A) (°C) VRRM VDRM ITSM (V) (A) IRRM @ IDRM @ Tj max max (mA) Tj = 25°C dv/dt di/dt 67% V

Circuit integrated 8002

Abstract: S1216 static ram 64K pt dsc sec
Contextual Info: HIGH-SPEED BiCMOS ECL STATIC RAM 64K 16Kx 4-BIT PRELIMINARY IDT 10494 FEATURES: DESCRIPTION: • 16,384-words x 4-bit organization • Address access time: 8/10 /1 5 ns (max.) • Low power dissipation: 600m W (typ.) • Fully compatible with ECL logic levels

triac sot23

Abstract: TYN604 BTW66-400 SCR tyn612 TYN816 TYN058 TYN656 TYN658 TN2540-600G tyn610
Contextual Info: SCR & TRIAC fZT SGS-THOMSON ^ 7/ SCRs [ID fflm itM M D C g l SOT23 SOT 223 DPAK D2PAK SURFACE MOUNT SCRs Tj max = 1 25 °C except TS820-xxxB and TS420-xxxB : 110 °C It (rm s ) Ta (A ) (1) Tl (2) Tc (3) Ttab (4) (°C) P0102xL P0109xL 0,2 P0102xN X0202xN

Contextual Info: SiHB24N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Low Figure-of-Merit (FOM) Ron x Qg 700 VGS = 10 V Qg max. (nC) 122 Qgs (nC) 21 Qgd (nC) • • • • • 0.145

STF12A80

Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
Contextual Info: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer

BUT11APX equivalent

Abstract: BU4508DX equivalent 2SD1876 2Sd1651 equivalent BYS21-45 smd zener diode color band 2SD1878 data sheet 2SC5296 equivalent BT151-600R BUK98150 spice
Contextual Info: Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210

triac mw 137 600G

Abstract: Transistor s106d1 transistor c103m TYN604 scr pin diagram Triac AC INRUSH CURRENT LIMITER opto diac TYN604 scr datasheet triac bta40-700b firing circuit alternistor "application note" UJT 2N2646
Contextual Info: Thyristor Product Catalog Littelfuse, Inc. 1800 Hurd Drive Irving, Texas 75038 United States of America Phone: +1 972-580-7777 Fax: +1 972-550-1309 Website: http://www.littelfuse.com E-mail: techsalespower@littelfuse.com 2004 Littelfuse, Inc. Thyristor Product Catalog

Contextual Info: New Product Si7623DN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () Max. ID (A) 0.0038 at VGS = - 10 V - 35a 0.0053 at VGS = - 4.5 V - 35a 0.0090 at VGS = - 2.5 V a Qg (Typ.) 55.5 nC - 35 APPLICATIONS PowerPAK 1212-8

S1217

Contextual Info: Si8489EDB Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES • TrenchFET Power MOSFET PRODUCT SUMMARY RDS(on) () Max. ID (A)a, e 0.044 at VGS = - 10 V - 5.4 0.054 at VGS = - 4.5 V - 4.9 0.082 at VGS = - 2.5 V - 3.9 VDS (V) - 20 Qg (Typ.) 9.5 nC • Material categorization: