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    SIHB24N65E Search Results

    SIHB24N65E Datasheets (5)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SIHB24N65EF-GE3
    		Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 24A D2PAK Original PDF 161.98KB
    SIHB24N65EFT1-GE3
    		Vishay Siliconix N-CHANNEL 650V Original PDF 160.66KB 7
    SIHB24N65E-GE3
    		Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 650V 24A D2PAK Original PDF 9
    SIHB24N65ET1-GE3
    		Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 24A TO263 Original PDF 213.94KB
    SIHB24N65ET5-GE3
    		Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 24A TO263 Original PDF 213.94KB
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    SIHB24N65E Price and Stock

    Vishay Intertechnologies

    Vishay Intertechnologies SIHB24N65EFT1-GE3

    MOSFETs TO263 650V 24A N-CH MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SIHB24N65EFT1-GE3 3,959
    • 1 $6.08
    • 10 $4.51
    • 100 $3.31
    • 1000 $2.70
    • 10000 $2.70
    		Buy Now
    Quest Components SIHB24N65EFT1-GE3 990
    • 1 $6.33
    • 10 $6.33
    • 100 $6.33
    • 1000 $2.32
    • 10000 $2.32
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    TTI SIHB24N65EFT1-GE3 Reel 2,400 800
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.67
    • 10000 $2.67
    		Buy Now

    Vishay Intertechnologies SIHB24N65E-GE3

    MOSFETs 650V Vds 30V Vgs D2PAK (TO-263)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SIHB24N65E-GE3 3,330
    • 1 $6.01
    • 10 $3.34
    • 100 $3.23
    • 1000 $2.66
    • 10000 $2.66
    		Buy Now
    TTI SIHB24N65E-GE3 Tube 1,650 10
    • 1 -
    • 10 $3.31
    • 100 $3.18
    • 1000 $2.63
    • 10000 $2.63
    		Buy Now

    Vishay Intertechnologies SIHB24N65EF-GE3

    MOSFETs 650V Vds 30V Vgs D2PAK (TO-263)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SIHB24N65EF-GE3 835
    • 1 $6.34
    • 10 $4.86
    • 100 $3.93
    • 1000 $2.70
    • 10000 $2.70
    		Buy Now
    Quest Components SIHB24N65EF-GE3 116
    • 1 $6.60
    • 10 $3.30
    • 100 $3.08
    • 1000 $3.08
    • 10000 $3.08
    		Buy Now
    TTI SIHB24N65EF-GE3 Reel 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.80
    • 10000 $2.63
    		Buy Now

    Vishay Intertechnologies SIHB24N65EFT5-GE3

    MOSFETs N-CHANNEL 650V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SIHB24N65EFT5-GE3
    • 1 $6.33
    • 10 $4.85
    • 100 $3.92
    • 1000 $2.98
    • 10000 $2.98
    		Get Quote

    Vishay Intertechnologies SIHB24N65ET1-GE3

    MOSFETs N-Channel 650V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SIHB24N65ET1-GE3
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.66
    • 10000 $2.66
    		Get Quote
    TTI SIHB24N65ET1-GE3 Reel 800
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.81
    • 10000 $2.60
    		Buy Now
    Find more SIHB24N65E price and stock on Findchips.com

    SIHB24N65E Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: SiHB24N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Halogen-free According to IEC 61249-2-21 Definition • Low Figure-of-Merit (FOM) Ron x Qg 700 VGS = 10 V 0.145 Qg max. (nC)


    Original     		SiHB24N65E 2002/95/EC O-263) 11-Mar-11 PDF

    Contextual Info: SiHB24N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Low Figure-of-Merit (FOM) Ron x Qg 700 VGS = 10 V Qg max. (nC) 122 Qgs (nC) 21 Qgd (nC) • • • • • 0.145


    Original     		SiHB24N65E O-263) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: SiHB24N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Low Figure-of-Merit (FOM) Ron x Qg 700 VGS = 10 V Qg max. (nC) 122 Qgs (nC) 21 Qgd (nC) • • • • • 0.145


    Original     		SiHB24N65E O-263) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: SiHB24N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Low Figure-of-Merit (FOM) Ron x Qg 700 VGS = 10 V Qg max. (nC) 122 Qgs (nC) 21 Qgd (nC) • • • • • 0.145


    Original     		SiHB24N65E 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: SiHB24N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Generation Two • Low Figure-of-Merit (FOM) Ron x Qg 700 VGS = 10 V 0.145 Qg max. (nC) 122 Qgs (nC) 21 Qgd (nC) •


    Original     		SiHB24N65E 2002/95/EC O-263) 11-Mar-11 PDF

    Contextual Info: SiHB24N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C (Ω) • Low figure-of-merit (FOM) Ron x Qg 700 VGS = 10 V Qg max. (nC) • • • • • 0.145 122 Qgs (nC) 21 Qgd (nC) 37


    Original     		SiHB24N65E O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SiHB24N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C (Ω) • Halogen-free According to IEC 61249-2-21 Definition • Low Figure-of-Merit (FOM) Ron x Qg 700 VGS = 10 V 0.145 Qg max. (nC)


    Original     		SiHB24N65E 2002/95/EC O-263) 11-Mar-11 PDF

    Contextual Info: SiHB24N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Low Figure-of-Merit (FOM) Ron x Qg 700 VGS = 10 V Qg max. (nC) 122 Qgs (nC) 21 Qgd (nC) • • • • • 0.145


    Original     		SiHB24N65E O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SiHB24N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Low Figure-of-Merit (FOM) Ron x Qg 700 VGS = 10 V Qg max. (nC) • • • • • 0.145 122 Qgs (nC) 21 Qgd (nC)


    Original     		SiHB24N65E 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SiHB24N65E_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		SiHB24N65E AN609, 7113m 5283m 0346m 9810u 28-Nov-14 PDF

    TO-247 FULLPAK Package

    Abstract: SIHG73N60 SiHF22N60 SIHG22N60E solar pv SIHG24N65 sihg47n60 SiHF7N60E
    Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - 30 % Reduction in Specific On-Resistance I INNOVAT AND TEC O L OGY E Series N HN HIGH-VOLTAGE POWER MOSFETs O 19 62-2012 600 V and 650 V High-Performance MOSFETs E Series 600 V and 650 V, Super Junction N-Channel Power MOSFETs with a 30 % Reduction


    Original     		enerTO-247 O-247 O-220 PAK/TO-263 VMN-PT0273-1208 TO-247 FULLPAK Package SIHG73N60 SiHF22N60 SIHG22N60E solar pv SIHG24N65 sihg47n60 SiHF7N60E PDF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 PDF