RURP3010 Search Results

RUR30100

Abstract: RURP30100 rurp3090 RURP3070 RURP3080
Contextual Info: RURP3070, RURP3080, RURP3090, RURP30100 200 200 100 100 IR , REVERSE CURRENT µA IF , FORWARD CURRENT (A) Typical Performance Curves TJ = +175oC TJ = +100oC 10 TJ = +25oC 1 TJ = +175oC 10 TJ = +100oC 1.0 0.1 TJ = +25oC 0.01 0.0 0.5 1.0 1.5 2.0 2.5 400 600

Contextual Info: « RURP3070, RURP3080, RURP3090, RURP30100 ¡11995 30A, 700V - 1000V U ltrafast Diodes Features Package • Ultrafast with Soft Recovery Characteristic tRR< 110ns JEDEC TQ-220AC ANODE CATHODE • +175°C Rated Junction Temperature CATHODE (FLANGE) • Reverse Voltage Up to 1000V

RURP3080

Abstract: transistor 1000V RURP30100
Contextual Info: « H a r r is RURP3070, RURP3080 uu — RURP3090, RURP30100 Decem ber 1993 30A, 700V - 1 000V Ultrafast Diodes Package Features JE D E C TO-220AC TOP VIEW • Ultrafast with Soft Recovery Characteristic tRR< 110ns • +175°C Rated Junction Temperature • Reverse Voltage Up to 1000V

Contextual Info: RURP30100 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current30 V(RRM)(V) Rep.Pk.Rev. Voltage1000 t(rr) Max.(s) Rev.Rec. Time150n @I(F) (A) (Test Condition)30 @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.8 @I(FM) (A) (Test Condition)30

Contextual Info: RURP3010, RURP3015, RURP3020 ¡11995 30A, 100V - 200V U ltrafast Diodes Features Package • Ultrafast with Soft Recovery Characteristic tRR < 45ns JEDEC TQ-220AC ANODE • +175°C Rated Junction Temperature • Reverse Voltage Up to 200V • Avalanche Energy Rated

RURP3010

Abstract: RURP3015 RURP3020 power transistor 200V, 30A
Contextual Info: RURP3010, RURP3015, RURP3020 S E M I C O N D U C T O R 30A, 100V - 200V Ultrafast Diodes April 1995 Features Package • Ultrafast with Soft Recovery Characteristic tRR < 45ns JEDEC TO-220AC ANODE • +175oC Rated Junction Temperature CATHODE CATHODE (FLANGE)

RUR30100

Abstract: RURP30100 fast recovery diode 1000v 30A
Contextual Info: RURP30100 interdi Data Sheet Ja nu a ry 2000 File N u m b e r 2877.4 30A, 1000V Ultrafast Diode Features The RURP30100 is an ultrafast diode with soft recovery • U Itrafast with Soft • Operating Temperature. 175°C

30100 transistor

Abstract: RURP3080
Contextual Info: < X | % ms h a r r RURP3070, RURP3080, RURP3090, RURP30100 i s „ . . c o n - u c t o . 30A, 700V - 1000V Ultrafast Diodes April 1 9 9 5 Features Package • Ultrafast with Soft Recovery Characteristic *rr < 110ns JE D E C TO-22QAC ANODE CATHODE • +175°C Rated Junction Temperature

MUR1520 equivalent

Abstract: MUR850 BYW51150 MUR1550 MUR880 MUR1510 MUR810 RURD410 RURD610 RURD610S
Contextual Info: 75A/80A 100A 150A MUR1550 RURP3050 RURG3050 RURG5050 RURG8050 RURU5050 RURU8050 RURU10050 RURU15050 MUR850 RURP1550 RURP850 60ns 1.5V 60ns 1.5V 60ns 1.6V 75ns 1.6V 85ns 1.6V 75ns 1.6V 85ns 1.6V 100ns 1.6V 100ns 60ns 1.5V 60ns† 1.5V MUR8100E RURP15100 RURP30100 RURG30100 RURG50100 RURG80100 RURU50100 RURU80100 RURU100100 RURU150100

RURP3020

Abstract: RURP3010
Contextual Info: H A R R IS S E M I C O N D U C T O R RURP3010, RURP3015 RURP3020 30A, 100V - 200V Ultrafast Diodes Decem ber 1993 Package Features • Ultrafast with Soft Recovery Characteristic tRR < 45ns JEOEC T0-220AC TOP VIEW uO • +175°C Rated Junction Temperature

RURP1S60

Abstract: RURP880 RURP3080 ULTRAFAST 600V RURG8040 MUR810 MUR1550
Contextual Info: 5-3 ULTRAFAST SINGLE DIODES Selection Guide Continued HARRIS ULTRAFAST RECOVERY RECTIFIER PRODUCT LINE 2 LEAD TO-247 TO-220AC ' f <AVG) 15A SINGLE LEAD TO-21B •f <AVG> 30A 30A ^F(AVQ) 75A/B0A 50A 50A 75A/80A Vrrm BA 100A 150A 100V MUR810 RURP810 MUR1510 RURP3010 RURG3010

P3010R

Abstract: P3020
Contextual Info: RURP3010, RURP3015, RURP3020 HARRIS S E M I C O N D U C T O R 30A, 100V - 200V Ultrafast Diodes A pril 1995 Features Package • Ultrafast with Soft Recovery Characteristic tRR < 45ns JE D EC TO -220A C ANODE • +175°C Rated Junction Temperature CATHODE

Contextual Info: RURP3010 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current30 V(RRM)(V) Rep.Pk.Rev. Voltage100 t(rr) Max.(s) Rev.Rec. Time50n @I(F) (A) (Test Condition)30 @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)30

RUR30100

Abstract: rur30100 Diode tb 120 RURP30100
Contextual Info: RURP30100 Data Sheet January 2000 File Number 2877.4 30A, 1000V Ultrafast Diode Features The RURP30100 is an ultrafast diode with soft recovery characteristics trr < 110ns . It has a low forward voltage drop and is of silicon nitride passivated, ion-implanted,

rur30100 Diode

Abstract: RUR30100 RURP30100
Contextual Info: RURP30100 Data Sheet January 2000 File Number 2877.4 30A, 1000V Ultrafast Diode Features The RURP30100 is an ultrafast diode with soft recovery characteristics trr < 110ns . It has a low forward voltage drop and is of silicon nitride passivated, ion-implanted,

STR-G6551

Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
Contextual Info: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision

BYW19-1000

Abstract: BYX49-600 BYX49-1200 BYV72E-200 RS8MT byx49 BY229-1000 UNITRODE CROSS BYT29-300 BYV72-200
Contextual Info: 41892.6 - FO-012 CROSSREF 11/19/98 10:54 AM Page 1 Harris Semiconductor-An Industry Leader For More Information: Harris Semiconductor comprises one sector of Harris Harris Marketing Support and ask for extension #7820

Contextual Info: RURP3040, RURP3050, RURP3060 ¡11995 30A, 400V - 600V U ltrafast Diodes Features Package • Ultrafast with Soft Recovery Characteristic tRR < 55ns JEDEC TQ-220AC ANODE • +175°C Rated Junction Temperature CATHODE • Reverse Voltage Up to 600V • Avalanche Energy Rated

RURU10060

Abstract: MUR1560 MUR850 MUR850 diode MUR880E MUR1510 MUR1515 MUR810 MUR815 RURG3010
Contextual Info: 150A RURP8120 RURP15120 RURP30120 RURG30120 RURG50120 RURG75120 RURU50120 RURU75120 RURU100120 RURU150120 2.1V 110ns 2.1V 130ns 2.1V 150ns 2.1V 150ns 2.1 200ns 2.1V 200ns 2.1V 200ns 2.1V 200ns 2.1V 200ns 2.1V 200ns 1200V S E M I C O N D U C TO R NOTE: VF at IF AVG , TJ = 25oC; trr at IF(AVG), dIF/dt = 100A/µs or 200A/µs, TJ = 25oC; † trr at IF = 1A.

igbt 1000v 80a

Abstract: 30A, 600v DIODE
Contextual Info: — MCT/IGBT/DIODES — 5 ULTRAFAST SINGLE DIODES PAGE SELECTION G U ID E . 5-3 MUR810, MUR815,

RURP3060

Abstract: RURP3010 RURP3015 RURP3020 RURP3040 RURP3050
Contextual Info: RURP3040, RURP3050, RURP3060 S E M I C O N D U C T O R 30A, 400V - 600V Ultrafast Diodes April 1995 Features Package • Ultrafast with Soft Recovery Characteristic tRR < 55ns JEDEC TO-220AC ANODE • +175oC Rated Junction Temperature CATHODE CATHODE (FLANGE)

RURU8060

Abstract: 3 phase motor control FM2G75US60 1N4004 SMA smps welding machine Piezoelectric 1Mhz FFPF60B150DS INDUCTION HEATING SGS5N150UF 150 KW motor
Contextual Info: IGBT and Rectifier Selection Guide February 2002 Discrete IGBTs 1 Automotive Ignition IGBTs 6 IGBT Smart Power Modules SPM 7 IGBT Modules 8 HyperFast/UltraSoft Recovery Rectifiers (Stealth Family) 9 HyperFast Recovery Rectifiers 10 UltraFast Recovery Rectifiers

65e9 transistor

Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12

Contextual Info: £!| h U U P RURP3040, RURP3050, R URP3060 a r r is S E M I C O N D U C T O R 30A, 400V - 600V Ultrafast Diodes Aprii 1995 Features Package • Ultrafast with Soft Recovery Characteristic tRR < 55ns JE D EC TO-22QAC ANODE • +175°C Rated Junction Temperature