URG30100C
Abstract: RURG30100CC URG30100
Contextual Info: RURG30100CC Data Sheet Title UR 010 C bt A, 00V rafa Dual ode) utho eyrds A, 00V rafa Dual ode, errpoon, minctor, ache ergy ted, itch wer pes, wer itch January 2000 File Number 2935.3 30A, 1000V Ultrafast Dual Diode Features The RURG30100CC is an ultrafast dual diode with soft
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URG30100C
Abstract: RURG30100CC
Contextual Info: RURG30100CC Data Sheet January 2002 30A, 1000V Ultrafast Dual Diode Features The RURG30100CC is an ultrafast dual diode with soft recovery characteristics trr < 110ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.
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RUR30100
Abstract: RURP30100 fast recovery diode 1000v 30A
Contextual Info: RURP30100 interdi Data Sheet Ja nu a ry 2000 File N u m b e r 2877.4 30A, 1000V Ultrafast Diode Features The RURP30100 is an ultrafast diode with soft recovery • U Itrafast with Soft • Operating Temperature. 175°C
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rurp30100110nsta09904o-22qac+2rur30100fast recovery diode 1000v 30a
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RURG30100
Abstract: TA09904
Contextual Info: RURG30100 Data Sheet January 2000 File Number 3213.2 30A, 1000V Ultrafast Diode Features The RURG30100 is an ultrafast diode with soft recovery characteristics trr < 110ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial
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URH30100C
Abstract: RURH30100CC 1225AL diode 1000V 100a
Contextual Info: RURH30100CC Data Sheet Title UR 010 C bt A, 00V rafa Dual ode) utho eyrds A, 00V rafa Dual ode, errpoon, minctor, ache ergy ted, itch wer pes, wer January 2000 File Number 2932.3 30A, 1000V Ultrafast Dual Diode Features The RURH30100CC is an ultrafast dual diode with soft
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rurh30100cc110nsurh30100c1225al+1diode 1000v 100a
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igbt 1000v 30a
Abstract: RURG30100
Contextual Info: RURG30100 Data Sheet Title URG 100 bt A, 00V rafa ode) utho eyrds A, 00V rafa January 2000 3213.2 30A, 1000V Ultrafast Diode Features The RURG30100 is an ultrafast diode with soft recovery characteristics trr < 110ns). It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial
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65e9 transistor
Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12
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1-888-intersilms-012aamo-153aarf1k49090+16rf1k49093rf1k49092itf87056dqtitf87072dk8titf87008dqtrf1k4922365e9 transistortransistor 75307dtransistor 65e8sd mosfet drive datasheet 4468 8 ping40n60rhr15120 equivalent10n120bnd76107dtransistor 76121demerson three phase dc motor driver service note
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tb 120
Abstract: RURH30100CC URH30100C *h30100
Contextual Info: RURH30100CC Data Sheet January 2000 File Number 2932.3 30A, 1000V Ultrafast Dual Diode Features The RURH30100CC is an ultrafast dual diode with soft recovery characteristics trr < 110ns . It has low forward voltage drop and is of silicon nitride passivated ionimplanted epitaxial planar construction.
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RURH30100CC
Abstract: URH30100C
Contextual Info: RURH30100CC Data Sheet January 2002 30A, 1000V Ultrafast Dual Diode Features The RURH30100CC is an ultrafast dual diode with soft recovery characteristics trr < 110ns . It has low forward voltage drop and is of silicon nitride passivated ionimplanted epitaxial planar construction.
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RUR30100
Abstract: rur30100 Diode tb 120 RURP30100
Contextual Info: RURP30100 Data Sheet January 2000 File Number 2877.4 30A, 1000V Ultrafast Diode Features The RURP30100 is an ultrafast diode with soft recovery characteristics trr < 110ns . It has a low forward voltage drop and is of silicon nitride passivated, ion-implanted,
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RUR30100
Abstract: rur30100 Diode RURP30100
Contextual Info: RURP30100 Data Sheet January 2002 30A, 1000V Ultrafast Diode Features The RURP30100 is an ultrafast diode with soft recovery characteristics trr < 110ns . It has a low forward voltage drop and is of silicon nitride passivated, ion-implanted, epitaxial construction.
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rurp30100110ns175ocrur30100+1rur30100 diode
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rur30100 Diode
Abstract: RUR30100 RURP30100
Contextual Info: RURP30100 Data Sheet January 2000 File Number 2877.4 30A, 1000V Ultrafast Diode Features The RURP30100 is an ultrafast diode with soft recovery characteristics trr < 110ns . It has a low forward voltage drop and is of silicon nitride passivated, ion-implanted,
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RURG30100
Contextual Info: RURG30100 Data Sheet January 2002 30A, 1000V Ultrafast Diode Features The RURG30100 is an ultrafast diode with soft recovery characteristics trr < 110ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.
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