RFL1N18 Search Results

Contextual Info: 2} H a rris RFL1N18 RFL1N20 N-Channel Enhancem ent-M ode Power Field-Effect Transistors August 1991 F eatures P ackage T 0 -2 0 5 A F B O TT O M VIEW • 1A, 180V and 200V • rQs on = 3.65ft • S O A is Power-Dissipation Limited GATE SOURCE • Nanosecond Switching Speeds

Contextual Info: • M3DE571 005 471b 5T1 HAS RFL1N18L RFL1N20L HARRIS August 1991 N-Channel Logic Level Power Field-Effect Transistors L2FET Package Features TO-2Û5AF • 1A, 180V and 200V BOTTOM VIEW • rDS(ON) = 3.65H • Design Optimized for 5V Gate Drives GATE SOURCE

Contextual Info: W vys S RFL1N18, RFL1N20 S e m ico n d ucto r 7 1A, 180V and 200V, 3.65 Ohm, N-Channel Power MOSFETs January 1998 Description Features 1A, 180V and 200V Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such

reverse bias diode characterstics

Abstract: rfl1n18 AN7254 AN7260 RFL1N20 TB334
Contextual Info: RFL1N18, RFL1N20 Semiconductor 1A, 180V and 200V, 3.65 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 1A, 180V and 200V • Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such

1S11

Abstract: RFL1N18 RFL1N20 RFP2N18 RFP2N20
Contextual Info: 3875081 G E SOLID STATE Qi DETl3ö75Dfll ODlfllDS 1 Standard Pow er M O S F E T s _ • _ ■ RFL1N18, RFL1N20, RFP2N18, RFP2N20 File N u m b e r ' 1442 N-Channel Enhancement-Mode Power Field-Effect Transistors

DIODE N20

Contextual Info: RFL1N18, RFL1N20 HARRIS S E M I C O N D U C T O R 1A, 180V and 200V, 3.65 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 1 A, 180V and 200V • Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such

RFL1N20L

Abstract: RFP2N20L RFL1N18L RFP2N18L
Contextual Info: ]>ËÏ 3Ô7SDS1 DD1Ö435 5 T ~ D T “3 ? ' 0 9 '3875081 G E SOLID STATELO! Logic-Level Power MOSFETs _ 5 !_ RFL1N18L, RFL1N20L, RFP2N18L, RFP2N20L File Number 1511 N-Channel Logic Level Power Field-Effect Transistors L2 FET

Contextual Info: RFL1N18, RFL1N20 S E M I C O N D U C T O R 1A, 180V and 200V, 3.65 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 1A, 180V and 200V • Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such

1n20

Abstract: RFP2N18 rfl1n18 RFL1N20 RFP2N20 TA9290 TA9289
Contextual Info: Standard Power MOSFETs RFL1N18, RFL1N20, RFP2N18, RFP2N20 F ile N u m b e r 1442 N-Channel Enhancement-Mode Power Field-Effect Transistors 1 and 2 A, 180 and 200 V rD s on : 3.50 and 3.650 Features: • a ■ ■ ■ SO A is p o w e r-d is s ip a tio n lim ite d

RFL1N20L

Abstract: RFP2N18L RFP2N20L AT 7312 RFL1N18L 92CS-J7307
Contextual Info: Logic-Level Power MOSFETs _ _ RFL1N18L, RFL1N20L, RFP2N18L, RFP2N20L File N um ber 15111 N-Channel Logic Level Power Field-Effect Transistors L2 FET 1 and 2 A, 180 V and 200 V rDs<on>: 3.5 O and 3.65 fi Features: • Design optimized for 5 volt gate drive

buz11

Abstract: BUZ31 THOMSON DISTRIBUTOR 58e d RFK30N12 THOMSON 58E THOMSON DISTRIBUTOR BUZ71 BUZ71A RFH12N RFK45N05
Contextual Info: THOnSON/ DISTRIBUTOR 5flE D • ^05^873 □□□57D3 5fl3 Wt TCSK P o w er M O S FE T s RF and B U Z -S e rie s P ow er M O S FE Ts — N -C h a n n e l Package Maximum Ratings BV q s S V id s (A) r DS(ON) OHMS 50 2 4 13 14 15 25 25 30 45 0.75 0.60 0.12

Contextual Info: R F L 1N 18 R F L 1N 2 0 HARRIS N-Channel Enhancement-Mode Power Field-Effect Transistors \ugust 1991 Features Pa cka ge T O -2 0 5 A F BO TTO M VIEW • 1A, 180V and 200V • ros on = 3.65ft • SO A is Power-Dissipation Limited • Nanosecond Switching Speeds

4311 mosfet transistor

Abstract: D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r
Contextual Info: - POWER MOSFETs 4 N-CHANNEL POWER MOSFETs PAGE 2N6755, 2N6756 N-Channel Enhancement-Mode Power Field-Effect Transistors. 2N6757, 2N6758 N-Channel Enhancement-Mode Power Field-Effect Transistors. 4-11 2N6759, 2N6760

field-effect transistors

Abstract: 05LSM RFP8N18L RFP25N06L transistors 2N6904 field-effect transistor RFP14N05L M 615 transistor transistor 684
Contextual Info: _ POWER MOSFETs 6 L O G IC L E V E L P O W E R M O S F E T s PAGE 2N6901 N-Channel Logic Level Power MOS Field-Effect Transistor L2F E T . 6-3 2N6902 N-Channel Logic Level Power MOS Field-Effect Transistor (L2F E T ) .

RFL1N20L

Contextual Info: 2 H a R F L 1 N 1 8 L r r i s R F L 1 N 2 0 L August 1991 N-Channel Logic Level Power Field-Effect Transistors L2 FET) Package Features • 1A, 180V and 200V T 0-205A F BOTTOM VIEW • rDS(0N) = 3 .6 5 0 • Design Optimized for SV Gate Drives • Can be Driven Directly from QMOS, NMOS, TTL Circuits

2N6901

Abstract: 2N6903 THOMSON DISTRIBUTOR RFL1N10L RFL2N05L RFM15N05L 2n6902 RFD14N05LSM RFD16N05L RFP14N05L
Contextual Info: _ THOMSON/ 5SE D DISTRIBUTOR • TDEtifi73 0G0S713 TCS< 4EB Power MOSFETs Logic Level - L2FETs — N-Channel Types N. Package Q Maximum Ratings BVpsS V >d s (A) 'DS(ON) O HMS e AS (mj) 50 2 4 15 14 16 25 50 0.75 0.60 0.14 0.100 0.047 0.047 0.22*

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

equivalent data book of 10N60 mosfet

Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
Contextual Info: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning: