Motorola MVAM125
Abstract: MVAM109
Contextual Info: MVAM108* MVAM109* MVAM115* MVAM125* SILICON TUNING DIODES . . d e s ig n e d fo r e le c tro n ic tu n in g o f A M re c e iv e rs a n d h ig h cap acita n ce, h ig h tu n in g ra tio a p p lic a tio n s . • H ig h C a p a c ita n c e R atio — C r = 15 M in ,
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mvam108mvam109mvam115mvam125+2t0-226acmotorola mvam125
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VAM109
Abstract: MVAM109 MVAM115 mvam108 C1C9
Contextual Info: MVAM108* MVAM109* MVAM115* MVAM125* SILICON TUNING DIODES . . . d e sig n e d fo r e le ctro n ic tu n in g o f AM receivers and high capacitance, h ig h tu n in g ra tio a pp licatio n s. • H igh C apacitance R atio — C r = 15 M in , M VAM 108, 115, 125
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mvam115vam125mvam108mvam109+4mvam125o-226acvam109c1c9
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diode BY 226
Abstract: MVAM2 diode 226 MPN3401 MPN3403 mbd201 PN3404 MBD102 MVAM115 MBD502
Contextual Info: A M Tuning . . . designed fo r electronic tuning of A M radios, receivers, and general A M frequency control. Device Type " V " Ct . V r = 1 V, f = I MHz PF MVAM 2 MVAM115 MVAM125 Min. Max. 280 440 440 380 560 Cap. Ratio 1-25 V min. V- V— Q @1 V
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mvam115mvam125var0310/ia+12mpn3401mpn3402mpn3403pn3404mpn3411mpn3412diode by 226mvam2diode 226mbd201mbd102mbd502
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D 92 M - 02 DIODE
Abstract: fro 108 MVAM109 mvam108 0/fro 108 M 108 MVAM-1
Contextual Info: MVAM108 MVAM109 MVAM115 MV1M125 I n ter n a tio n a l S e m ic o n d u c to r , I n c . SILICON TUNING DIODES T U N IN G D IO D E S W ITH V E R Y H IG H C A P A C IT A N C E RA TIO • High Capacitance Ratio CR= 15 Min for MVAM108, 115, 125 ■ Guaranteed Diode Capacitance
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mvam108mvam109mvam115mv1m125+80d378mvam125vaiv11d 92 m - 02 diodefro 1080/fro 108m 108mvam-1
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MVAM109
Abstract: MVAM108 MVAM115 nvam109 motorola mvam109 MVAM125 MVAM115 TUNING DIODE Motorola MVAM125 Am tuning DIODE MOTOROLA mvam108
Contextual Info: MVAM108* MVAM109* MVAM115* MVAM125* SILICON TUNING DIODES . . . designed for electronic tuning of A M receivers and high capacitance, high tuning ratio applications. • High Capacitance Ratio — C r = 15 M in , M V A M 108, 115, 125 CASE 182-02, STYLE 1
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mvam108mvam115mvam125mvam109+6nvam109motorola mvam109mvam115 tuning diodemotorola mvam125am tuning diodemotorola mvam108
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MVAM109
Abstract: MOTOROLA mvam108 MVAM115 motorola mvam109 diode b3l Am tuning DIODE MVAM108 MVAM115 TUNING DIODE MVAM125 MVAM115 TUNING DIODE Motorola
Contextual Info: MVAM108* MVAM109* MVAM115* MVAM125* SILICON TUN IN G DIODES . . . d e sign e d for electronic tun in g of A M receivers and h igh capacitance, h igh tu n in g ratio applications. • H igh C apacitance Ratio — C r = 15 Min , M V A M 1 0 8 , 115, 125 CASE 182-02, STYLE 1
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mvam108mvam115mvam125mvam109+6motorola mvam108motorola mvam109diode b3lam tuning diodemvam115 tuning diodemvam115 tuning diode motorola
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MVAM115
Abstract: varactor diode datasheet MVAM115 TUNING DIODE symbol of varactor diode and equivalent circuit tuning varactor varactor APPLICATION
Contextual Info: MVAM115 SILICON VARACTOR DIODE PACKAGE STYLE DESCRIPTION: The ASI MVAM115 is a Silicon Tuning Varactor Diode. FEATURES INCLUDE: • 15:1 Minimum Tuning Range • Q - 150 Minimum MAXIMUM RATINGS IF 50 mA VR 18 V PDISS 280 mW @ TC = 25 C TJ -55 C to +125 C TSTG
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mvam115ct1/ct10varactor diode datasheetmvam115 tuning diode+3symbol of varactor diode and equivalent circuittuning varactorvaractor application
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MVAM109
Abstract: MOTOROLA mvam108 MVAM115 MVAM108 vam109 motorola mvam109
Contextual Info: MOTOROLA MVAM108 MVAM109 MVAM115 MVAM125 SEM ICONDUCTOR TECHNICAL DATA v v c SILICON TUNING DIODE . . . d e s ig n e d fo r e le c tr o n ic tu n in g o f A M re c e iv e rs a n d h ig h capacitance, high tu n in g ratio applications. • High Capacitance Ratio — Cp = 1 5 Min .
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mvam108mvam109mvam115mvam125+3motorola mvam108vam109motorola mvam109
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MC68B21CP
Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References
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sg379/d1n965brlzen15v1n751as+151n967brlzen18v1n751asrl1n968brlzen20vmc68b21cpxcm916x1cth16transistor marking code 12w sot-23sg379mc68b54pxc68hc805p18cdwmc68b50cpmc2830ne555nchn ne555n
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IN5142
Abstract: IN5142A MVAM106 1N5472A MV104g Motorola 1N547 MVAM115 1N5470A 226AA TO226AA
Contextual Info: TUNING, HOT CARRIER, AND PIN DIODES Motorola’s RF diodes are designed for electronic tuning, mixing, and switching high frequency signals. These diodes are available in the hermetic D 0 -2 0 4 A A DO-7 and low cost TO-226AA (TO-92) packages. Tuning Diodes
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d0-204aao-226aamv18681n5464a+16n5142mv18701n5465a1n5143mv1871n5466ain5142in5142amvam1061n5472amv104g motorola1n547mvam1151n5470a226aato226aa
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MMBF112L
Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty
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06050lmmbd914lbas16lbal99l+16mbav70lmbav99lmbav74bd2835xlmbd2836xlmmbd2837xlmmbf112lmfe521mmbf1122n3797 equivalentmfe131 equivalentmps5210bc557 sot238c448bc459cmfe211
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transistor mosfet buv18a
Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
Contextual Info: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9
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transistor mosfet buv18am143206evkmmbf4856lm358 ic+668hc05sc24telephone line interface circuit bc517mc68b54xc68hc705p9mpx100apbuv18a
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BC337 BC547
Abstract: MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM
Contextual Info: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the
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mdc5000t1mdc3105lt1bc337 bc547msb81t1+8mbt3904dw9t1marking 6aa sodmvam115automatic stabilizer circuit diagram range 210 to 250 voltszt751mbt3904dw9transistor 2n4125ct bc547 transistor pin diagram
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MSC2404
Abstract: MPF3821 BC237 MPS8093 BCY72 MMBF4856 MAD130P MPS3866 bcy71 ALTERNATIVE BSS72
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP RF Amplifier Transistor Surface Mount MSA1022-CT1 Motorola Preferred Device COLLECTOR 3 3 2 1 2 BASE 1 EMITTER MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage VCBO – 30 Vdc Collector–Emitter Voltage
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msa1022-ct1emitte218amsc1621t1msc2404+15msd1819amv1620mv1624mv1636mv1640mv1642mpf3821bc237mps8093bcy72mmbf4856mad130pmps3866bcy71 alternativebss72
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stencil
Abstract: BC237 automatic heat detector project report BC393 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Schottky Barrier Diode BAT54T1 These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and
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bat54t1ju218amsc1621t1msc2404+10msd1819amv1620mv1624mv1636mv1640mv1642stencilbc237automatic heat detector project reportbc393 equivalent
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BC237
Abstract: level shifter 2N5401 2771 040 0002 MUN5214T1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN5211T1 SERIES NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device
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sc-70/sot-323spa218amsc1621t1msc2404+10msd1819amv1620mv1624mv1636mv1640mv1642bc237level shifter 2n54012771 040 0002mun5214t1
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bs170 replacement
Abstract: BC237 BC30 transistor K 2056
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Switching BS170 N–Channel — Enhancement 1 DRAIN 2 GATE 3 SOURCE MAXIMUM RATINGS 1 Rating Drain – Source Voltage Gate–Source Voltage — Continuous — Non–repetitive tp ≤ 50 µs Drain Current(1)
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bs170226aads218amsc1621t1+10msc2404msd1819amv1620mv1624mv1636mv1640bs170 replacementbc237bc30transistor k 2056
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transistor bc237 bc337
Abstract: replacement transistor BC337 bc337 TRANSISTOR equivalent bc338 equivalent BC337 TO-92 Generic BC337 circuit example BC160-16 BC337-25 "pin compatible" BC237 BC338 REPLACEMENT
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors NPN Silicon BC337,-16,-25,-40 BC338,-16,-25,-40 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC337 BC338 Unit Collector – Emitter Voltage VCEO 45 25 Vdc Collector – Base Voltage
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bc337bc338226aajunction218a+14msc1621t1msc2404msd1819amv1620transistor bc237 bc337replacement transistor bc337bc337 transistor equivalentbc338 equivalentbc337 to-92 genericbc337 circuit examplebc160-16bc337-25 "pin compatiblebc237bc338 replacement
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BC237
Abstract: MPS-A70 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor MPSA70 PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 CASE 29–04, STYLE 1 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO –40 Vdc Emitter – Base Voltage
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mpsa70226aacharacteri218amsc1621t1+8msc2404msd1819amv1620mv1624mv1636mv1640bc237mps-a70 equivalent
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bc182 equivalent 2n2907
Abstract: bc183 equivalent BC237 BC182 bc184 BF245 bc184 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC182,A,B NPN Silicon BC183 BC184 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC182 BC183 BC184 Unit Collector – Emitter Voltage VCEO 50 30 30 Vdc Collector – Base Voltage VCBO
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bc182bc183bc184226aa+8junction218amsc1621t1msc2404bc182 equivalent 2n2907bc183 equivalentbc237bf245bc184 equivalent
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transistor MPS5771
Abstract: BC237 bfw4
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High-Speed Switching Diode MMBD914LT1 Motorola Preferred Device 3 CATHODE 1 ANODE 3 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 100 Vdc Forward Current IF 200 mAdc IFM surge 500 mAdc Symbol Max Unit
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mmbd914lt1236abde218amsc1621t1+9msc2404msd1819amv1620mv1624mv1636mv1640transistor mps5771bc237bfw4
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P2d MARKING CODE
Abstract: H2A transistor ev 2816 BC237 transistor 2N2906
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor PZTA92T1 PNP Silicon COLLECTOR 2,4 BASE 1 EMITTER 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO – 300 Vdc Collector–Base Voltage VCBO –300 Vdc Emitter–Base Voltage
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pzta92t1261aaelectri218amsc1621t1+11msc2404msd1819amv1620mv1624mv1636mv1640p2d marking codeh2a transistorev 2816bc237transistor 2n2906
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WT transistor
Abstract: BC237 S11S 2n441 BF244B 2N3799 JFET BF245 C4 SOT-323 2N3819 MOTOROLA
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Transistor N–Channel 2 SOURCE MMBF5484LT1 Motorola Preferred Device 3 GATE 1 DRAIN 3 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Forward Gate Current 1 Symbol Value Unit VDG 25 Vdc
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mmbf5484lt1236abc218amsc1621t1+15msc2404msd1819amv1620mv1624mv1636mv1640wt transistorbc237s11s2n441bf244b2n3799jfet bf245c4 sot-3232n3819 motorola
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2N5457 MOTOROLA
Abstract: 2N5457 equivalent BC237 transistor 2N5457
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFETs Ċ General Purpose N–Channel — Depletion 2N5457 1 DRAIN *Motorola Preferred Device 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDS 25 Vdc Drain – Gate Voltage VDG 25 Vdc
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2n5457226aamsc1621t1msc2404+10msd1819amv1620mv1624mv1636mv1640mv16422n5457 motorola2n5457 equivalentbc237transistor 2n5457
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