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    MRF914 Search Results

    MRF914 Datasheets (5)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    MRF914
    Advanced Power Technology RF & MICROWAVE DISCRETE LOW POWER TRANSISTOR Original PDF 83.48KB 4
    MRF914
    Microsemi RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Original PDF 83.32KB 4
    MRF914
    Motorola European Master Selection Guide 1986 Scan PDF 142.5KB 3
    MRF914
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 82.91KB 1
    MRF914
    Unknown Semiconductor Master Cross Reference Guide Scan PDF 124.54KB 1
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    MRF914 Price and Stock

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    Microsemi Corporation MRF914

    Part Number Only
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components MRF914 10
    • 1 $12.87
    • 10 $6.43
    • 100 $6.43
    • 1000 $6.43
    • 10000 $6.43
    Buy Now

    Motorola Semiconductor Products MRF914

    Part Number Only
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components MRF914 3
    • 1 $12.87
    • 10 $6.43
    • 100 $6.43
    • 1000 $6.43
    • 10000 $6.43
    Buy Now

    MRF914 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    mrf914

    Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF914 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, high Frequency, To-72 packaged, Transistor • High Power Gain - Gmax = 15 dB (typ) @ f = 500 MHz


    Original
    mrf914to-72cos11 PDF

    Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF914 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • Silicon NPN, High Frequency Transistor High Power Gain - Gmax = 15 dB (typ) @ f = 500 MHz


    Original
    mrf914 PDF

    MRF914

    Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF914 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • Silicon NPN, High Frequency Transistor High Power Gain - Gmax = 15 dB (typ) @ f = 500 MHz


    Original
    mrf914 PDF

    Contextual Info: ^smi-Conductoi ZPioducti, Una. TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 (212) 227-6005 FAX: (973) 376-8960 U.SA MRF914 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • Silicon NPN, High Frequency Transistor High Power Gain - Gmax = 15 dB (typ) @ f = 500 MHz


    Original
    mrf914 PDF

    MRF914

    Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF914 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, high Frequency, To-72 packaged, Transistor • High Power Gain - Gmax = 15 dB (typ) @ f = 500 MHz


    Original
    mrf914to-72msc1325 PDF

    MRF914

    Contextual Info: MO T O R O L A SC X S T R S / R F MbE D • b3b72Sil GQTM'iMM S ■ noTb MOTOROLA T - 3 1 - 1*5 ■ SEMICONDUCTOR TECHNICAL DATA MRF914 The E F Line fy = 4.5 GHz @ 20 mA HIGH FREQUENCY TRANSISTOR NPN SILICON NPN SILICON HIGH FREQUENCY TRANSISTOR . . . designed for applications requiring high-gain, low-noise and


    OCR Scan
    b3b72silmrf914 PDF

    MRF914

    Contextual Info: MRF914 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, high Frequency, To-72 packaged, Transistor • High Power Gain - Gmax = 15 dB typ @ f = 500 MHz • Low Noise Figure NF = 2.5 dB (typ) @ f = 500 MHz 2 1 3 4 • High FT - 4.5 GHz (typ) @ IC = 20 mAdc


    Original
    mrf914to-72 PDF

    MRF581G

    Abstract: MRF581AG MRF581A s-parameter 2N3866A 2N4427 MRF4427 MRF553 MRF581
    Contextual Info: MRF581 MRF581G MRF581A MRF581AG *G Denotes RoHS Compliant, Pb free Terminal Finish RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • Low Noise - 2.5 dB @ 500 MHZ Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz Ftau - 5.0 GHz @ 10v, 75mA


    Original
    mrf581mrf581gmrf581amrf581ag+62n62552n5179s-parameter 2n3866a2n4427mrf4427mrf553 PDF

    2N4427

    Abstract: 1300 NPN MRF553 MRF555 MRF559 MRF607 2N3866A 2N5179 2N6255 MRF4427
    Contextual Info: 2N4427 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • • Silicon NPN, To-39 packaged VHF/UHF Transistor 1 Watt Minimum Power Output @ 175 MHz 1. Emitter 2. Base 3. Collector 500 MHz Current-Gain Bandwidth Product @ 50mA TO-39


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    2n4427to-39mrf44271300 npn+7mrf553mrf555mrf559mrf6072n3866a2n51792n6255 PDF

    2n4427 MOTOROLA

    Abstract: motorola 2N4427 2N4427 BFR90 amplifier 2N4427 equivalent bfr91 npn UHF transistor 2N5179 npn UHF transistor BFR96 LOW POWER TRANSISTOR MRF581A mrf5943c motorola
    Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N4427 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • • Silicon NPN, To-39 packaged VHF/UHF Transistor 1 Watt Minimum Power Output @ 175 MHz


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    2n4427to-39bfr91bfr90+12mrf545mrf544msc13012n4427 motorolamotorola 2n4427bfr90 amplifier2n4427 equivalent bfr91npn uhf transistor 2n5179npn uhf transistorbfr96 low power transistormrf581amrf5943c motorola PDF

    MRF586

    Abstract: MRF517 low cost BFR90 transistor 2n2857 UHF transistor common base amplifier 2n5179 bfr90 equivalent BFR91 transistor BFR96 RF POWER TRANSISTOR NPN MRF904
    Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF517 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-39 packaged VHF/UHF Transistor • Gpe = 10 dB (typ) @ 60 mA, 300 MHz • 3 GHz Current-Gain Bandwidth Product (min) @ 60mA


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    mrf517to-39mrf571bfr91+12bfr90mrf545mrf544mrf586low cost bfr90 transistor2n2857 uhf transistor common base amplifier2n5179bfr90 equivalentbfr91 transistorbfr96rf power transistor npnmrf904 PDF

    BFR91 transistor

    Abstract: 2N5109 BFR90 transistor BFR91 BFR96 datasheet for transistor bfr96 mrf559 v mrf5812 equivalent MRF586 transistor bfr96
    Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF557 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 870 MHz Characteristics Output Power = 1.5 W Minimum Gain = 8 dB


    Original
    mrf557bfr90mrf545mrf544+10bfr91 transistor2n5109bfr90 transistorbfr91bfr96datasheet for transistor bfr96mrf559 vmrf5812 equivalentmrf586transistor bfr96 PDF

    RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ

    Abstract: RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ 2N5109 2N5179 2N3866A 2N4427 2N6255 MRF4427 MRF553
    Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5109 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-39 packaged VHF/UHF Transistor • 1.2 GHz Current-Gain Bandwidth Product @ 50mA •


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    2n5109to-39mrf559mrf4427+102n4427mrf553mrf553tmrf607rf npn power transistor 5 watt 2.4 ghzrf npn power transistor 1 watt 2.4 ghzrf npn power transistor 10 watt 2.4 ghz2n51792n3866a2n6255 PDF

    MRF553G

    Abstract: 1N4148 diode 2N5179 mrf544 1N4148 2N4427 2N5109 2N6255 MRF4427 MRF553
    Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF553 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS MRF553G * G Denotes RoHS Compliant, Pb Free Terminal Finish Features • • • • • • Specified @ 12.5 V, 175 MHz Characteristics


    Original
    mrf553mrf553g1n4148 diode2n5179+6mrf5441n41482n44272n51092n6255mrf4427 PDF

    s-parameter 2N4427

    Abstract: S-parameter 2N5179 BFR91
    Contextual Info: MRF5943, R1, R2 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Low Cost SO-8 Plastic Surface Mount Package. • S-Parameter Characterization • Tape and Reel Packaging Options Available • Maximum Available Gain = 17dB @ 300MHz SO-8 R1 suffix–Tape and Reel, 500 units


    Original
    mrf5943300mhztempemrf545mrf544+3s-parameter 2n4427s-parameter 2n5179bfr91 PDF

    BFR91

    Abstract: 2N4427 equivalent bfr91 2N4427 2N5179 2N6255 MRF4427 MRF553 MRF559 MRF607
    Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 BFR91 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • High Current-Gain – Bandwidth Product, fT = 5 GHz (typ) @ IC = 30 mA • Low Noise Figure – NF = 1.9 dB (typ) @ f = 0.5 GHz, 2.5 dB (typ) @ 1GHz


    Original
    bfr91vdc00mrf571bfr90+11mrf545mrf544msc13082n4427 equivalent bfr912n44272n51792n6255mrf4427mrf553mrf559mrf607 PDF

    MRF559

    Abstract: mrf559 v 2N5179 2N6255 2N3866A 2N4427 MRF4427 MRF553 MRF607 MSC1317
    Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF559 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 870 MHz Characteristics Output Power = .5 W Minimum Gain = 8.0 dB


    Original
    mrf5592n51092n4427mrf4427+7msc1317mrf559 v2n51792n62552n3866amrf553mrf607 PDF

    2N5179

    Abstract: high gain PNP RF TRANSISTOR 2N4957 2N2857 2N3866 MOTOROLA 2N2857 MOTOROLA MOTOROLA 2N5179 motorola european master selection 2n4958 Y parameters of transistors
    Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. QPL types with JAN, JTX and JTXV processing levels are available as well as Hi Rei pro­


    OCR Scan
    17a-0105a-01gain-200mrf502+14bfx89bfy902n51792n2857mrf904mrf914high gain pnp rf transistor2n49572n3866 motorola2n2857 motorolamotorola 2n5179motorola european master selection2n4958y parameters of transistors PDF

    MRF965

    Abstract: 2N5109 motorola 2N5179 motorola 2N5179 high gain PNP RF TRANSISTOR BFY90 MOTOROLA MRF586 2n6603 transistor MRF542 RF 2N3866
    Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. Q P L types with JAN, JTX and JT X V processing levels are available as well as Hi Rei pro­


    OCR Scan
    17a-0105a-01gain-200mrf502+15bfx89bfy902n51792n2857mrf904mrf914mrf9652n5109 motorolamotorola 2n5179high gain pnp rf transistorbfy90 motorolamrf5862n6603 transistormrf542rf 2n3866 PDF

    2N5109 motorola

    Abstract: MRF536 BFR90 application MRF931 MRF586 244A-01 MRF962 MRF961 mrf517 2N5943
    Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. Q P L types with JAN, JT X and J T X V processing levels are available a s well a s Hi Rei pro­


    OCR Scan
    17a-0105a-01mrf536mrf2369+14mrf57144a-012n5947mrf5112n6603mrf9622n5109 motorolabfr90 applicationmrf931mrf586244a-01mrf961mrf5172n5943 PDF

    2N3866 MOTOROLA

    Abstract: 2N3866 MOTOROLA s parameters 2n5179 10 GHz PNP transistor npn UHF transistor 2N5179 2N2857 MOTOROLA MOTOROLA 2N5179 2n2857 RF POWER TRANSISTOR NPN, motorola 2n4957
    Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. QPL types with JAN, JTX and JTXV processing levels are available as well as Hi Rei pro­


    OCR Scan
    17a-0105a-012n58292n5031+14mrf904mrf571rf572/mrf23692n3866 motorola2n3866 motorola s parameters2n517910 ghz pnp transistornpn uhf transistor 2n51792n2857 motorolamotorola 2n51792n2857rf power transistor npn, motorola2n4957 PDF

    2N5109 motorola

    Abstract: BFY90 MOTOROLA 2N5583 MRF965 bfr91 motorola MRF586 MOTOROLA 2N5179 2n4427 MOTOROLA macro-X ceramic 2N3866A
    Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. Q P L types with JAN, JTX and JT X V processing levels are available as well as Hi Rei pro­


    OCR Scan
    17a-0105a-01mrf58744a-01+162n39592n39602n5835mm4049mrf9142n59432n5109 motorolabfy90 motorola2n5583mrf965bfr91 motorolamrf586motorola 2n51792n4427 motorolamacro-x ceramic2n3866a PDF

    Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF555 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 470 MHz Characteristics Output Power = 1.5 W Minimum Gain = 11 dB


    Original
    mrf555mrf545mrf544msc1316 PDF

    Motorola transistors MRF 947

    Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
    Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that


    OCR Scan
    2phx11136q-17motorola transistors mrf 947trimpots 3296transistor c5386+71n47402n5591 motorola2n5688cq 542 transistor npn motorolaequivalent transistor of 2sc3358hb215/dic cd 2399 gp PDF