MOS20 Search Results

H01N45A

Contextual Info: HI-SINCERITY Spec. No. : MOS200408 Issued Date : 2004.11.01 Revised Date : 2005.03.10 Page No. : 1/4 MICROELECTRONICS CORP. H01N45A H01N45A Pin Assignment 3-Lead Plastic TO-92 Package Code: A Pin 1: Gate Pin 2: Drain Pin 3: Source N-Channel Power Field Effect Transistor

mosfet y1

Abstract: MOSFET MARK y2 mosfet k 61 y1 TL 434 H3055LJ Y2 MARKING
Contextual Info: HI-SINCERITY Spec. No. : MOS200606 Issued Date : 2006.03.01 Revised Date : 2006.05.04 Page No. : 1/4 MICROELECTRONICS CORP. H3055LJ H3055LJ Pin Assignment 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Tab N-Channel Enhancement-Mode MOSFET 20V, 13A

03n60

Abstract: H03N60 H03N60E H03N60F transistor 100A 3N60
Contextual Info: HI-SINCERITY Spec. No. : MOS200602 Issued Date : 2006.02.01 Revised Date : 2006.02.07 Page No. : 1/5 MICROELECTRONICS CORP. H03N60 Series H03N60 Series Pin Assignment Tab N-Channel Power Field Effect Transistor 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate

H2N7002

Contextual Info: HI-SINCERITY Spec. No. : MOS200405 Issued Date : 1994.01.25 Revised Date : 2005.09.21 Page No. : 1/5 MICROELECTRONICS CORP. H2N7002 H2N7002 Pin Assignment & Symbol 3 N-Channel MOSFET 60V, 0.2A 1 2 3-Lead Plastic SOT-23 Package Code: N Pin 1: Gate 2: Source 3: Drain

H2302N

Contextual Info: HI-SINCERITY Spec. No. : MOS200836 Issued Date : 2008.03.06 Revised Date : 2008.03.06 Page No. : 1/7 MICROELECTRONICS CORP. H2302N H2302N Pin Assignment & Symbol 3 N-Channel Enhancement-Mode MOSFET 20V, 2.4A 1 2 3-Lead Plastic SOT-23 Package Code: N Pin 1: Gate 2: Source 3: Drain

H2N7002

Contextual Info: HI-SINCERITY Spec. No. : MOS200503 Issued Date : 2005.04.01 Revised Date : 2009.10.09 Page No. : 1/5 MICROELECTRONICS CORP. H2N7002 N-CHANNEL TRANSISTOR Description N-channel enhancement-mode MOS transistor. SOT-23 Absolute Maximum Ratings Drain-Source Voltage . 60 V

H02N65

Abstract: H02N60E H02N60F h02n
Contextual Info: HI-SINCERITY Spec. No. : MOS200910 Issued Date : 2009.04.07 Revised Date : Page No. : 1/6 MICROELECTRONICS CORP. H02N65 Series H02N65 Series Pin Assignment Tab 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source N-Channel Power Field Effect Transistor

*07n60

Abstract: mosfet 600v 10a to-220ab H07N60 H07N60E H07N60F marking code diode 648
Contextual Info: HI-SINCERITY Spec. No. : MOS200604 Issued Date : 2006.02.01 Revised Date : 2006.02.07 Page No. : 1/5 MICROELECTRONICS CORP. H07N60 Series H07N60 Series Pin Assignment Tab N-Channel Power Field Effect Transistor 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate

rf630

Abstract: HIRF630 HIRF630F
Contextual Info: HI-SINCERITY Spec. No. : MOS200401 Issued Date : 2004.04.01 Revised Date : 2005.04.22 Page No. : 1/6 MICROELECTRONICS CORP. HIRF630 / HIRF630F HIRF630 Series Pin Assignment Tab N-CHANNEL POWER MOSFET 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain

mosfet 2g2

Abstract: H9926CTS H9926TS mark 6A N-channel code TS
Contextual Info: HI-SINCERITY Spec. No. : MOS200513 Issued Date : 2005.10.01 Revised Date : 2005.10.06 Page No. : 1/4 MICROELECTRONICS CORP. H9926TS / H9926CTS Dual N-Channel Enhancement-Mode MOSFET 20V, 6A 8-Lead Plastic TSSOP-8L Package Code: TS H9926TS Symbol & Pin Assignment

40N03

Abstract: 40n0 H40N03E
Contextual Info: HI-SINCERITY Spec. No. : MOS200517 Issued Date : 2005.12.01 Revised Date : 2005.12.16 Page No. : 1/5 MICROELECTRONICS CORP. H40N03E H40N03E Pin Assignment Tab 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source N-Channel Enhancement-Mode MOSFET 25V, 40A

H9926CS

Abstract: H9926S
Contextual Info: HI-SINCERITY Spec. No. : MOS200508 Issued Date : 2005.08.01 Revised Date : 2005.10.06 Page No. : 1/4 MICROELECTRONICS CORP. H9926S / H9926CS Dual N-Channel Enhancement-Mode MOSFET 20V, 6A 8 • 7 6 5 8-Lead Plastic SO-8 Package Code: S 1 2 3 4 H9926S Symbol & Pin Assignment

MOSFET MARK y2

Abstract: H01N60S H01N60SI H01N60SJ MOSFET MARK H1 mosfet y1
Contextual Info: HI-SINCERITY Spec. No. : MOS200501 Issued Date : 2005.01.01 Revised Date : 2005.09.28 Page No. : 1/5 MICROELECTRONICS CORP. H01N60S Series N-Channel Power Field Effect Transistor H01N60S Series Pin Assignment Tab Description 1 This high voltage MOSFET uses an advanced termination scheme to

H9435S

Contextual Info: HI-SINCERITY Spec. No. : MOS200509 Issued Date : 2005.10.01 Revised Date : 2005.10.06 Page No. : 1/4 MICROELECTRONICS CORP. H9435S • P-Channel Enhancement-Mode MOSFET -30V, -5.3A 8-Lead Plastic SO-8 Package Code: S H9435S Symbol & Pin Assignment Features

Contextual Info: HI-SINCERITY Spec. No. : MOS200810 Issued Date : 2008.12.31 Revised Date : Page No. : 1/6 MICROELECTRONICS GROUP. H3401N H3401N Pin Assignment & Symbol 3 P-Channel Enhancement Mode Field Effect Transistor 1 2 3-Lead Plastic SOT-23 Package Code: N Pin 1: Gate 2: Source 3: Drain

02n60

Abstract: all transistor 2N60 2N60 2N60 transistor PB40 bridge 2n60 application MOSFET MARK H1 TL 434 H02N60 H02N60E
Contextual Info: HI-SINCERITY Spec. No. : MOS200403 Issued Date : 2004.07.01 Revised Date : 2005.09.28 Page No. : 1/7 MICROELECTRONICS CORP. H02N60 Series H02N60 Series Pin Assignment 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Tab N-Channel Power Field Effect Transistor

Contextual Info: HI-SINCERITY Spec. No. : MOS200836 Issued Date : 2008.03.06 Revised Date : 2008.03.06 Page No. : 1/6 MICROELECTRONICS CORP. H2301N H2301N Pin Assignment & Symbol P-Channel Enhancement-Mode MOSFET -20V, -2.2A 3 1 3-Lead Plastic SOT-23 Package Code: P Pin 1: Gate 2: Source 3: Drain

Contextual Info: HI-SINCERITY Spec. No. : MOS200808 Issued Date : 2008.11.12 Revised Date :2008,12,30 Page No. : 1/5 MICROELECTRONICS CORP. H4946 Series 8-Lead Plastic DIP-8 Package Code: P N-CHANNEL ENHANCEMENT MODE POWER MOSFET 60V, 5A 8 Features • • RDS(on)<41mΩ@VGS=10V, ID=5.0A

mosfet 600v 10a to-220ab

Abstract: h10n60 n-CHANNEL POWER MOSFET 600v mosfet vgs 5v RD32 "MOSFET "600V 10A
Contextual Info: HI-SINCERITY Spec. No. : MOS200902 Issued Date : 2009.01.20 Revised Date : 2009.08.05 Page No. : 1/5 MICROELECTRONICS CORP. H10N60 Series H10N60 Series Tab 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source N-Channel Power MOSFET 600V,10A

Contextual Info: HI-SINCERITY Spec. No. : MOS200613 Issued Date : 2006.07.01 Revised Date : 2006.07.12 Page No. : 1/4 MICROELECTRONICS CORP. H2302N H2302N Pin Assignment & Symbol 3 N-Channel Enhancement-Mode MOSFET 20V, 2.4A 1 2 3-Lead Plastic SOT-23 Package Code: N Pin 1: Gate 2: Source 3: Drain

mosfet y1

Abstract: MOSFET MARK y2 mosfet k 61 y1 y2 marking TL 434 mosfet sn60 ultra low idss H-3055
Contextual Info: HI-SINCERITY Spec. No. : MOS200702 Issued Date : 2007.03.01 Revised Date : 2007.03.28 Page No. : 1/4 MICROELECTRONICS CORP. H3055MJ H3055MJ Pin Assignment 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Tab N-Channel Enhancement-Mode MOSFET 30V, 12A

H12N60F

Abstract: H-10N h12n60 H10N60F mosfet p 30v 60a
Contextual Info: HI-SINCERITY Spec. No. : MOS200902 Issued Date : 2009.01.20 Revised Date : Page No. : 1/4 MICROELECTRONICS CORP. H12N60F H12N60F N-Channel Power MOSFET 600V,12A Applications • Switch Mode Power Supply • Uninterruptable Power Supply • High Speed Power Switching

H9435S

Abstract: h4422 H9435 H943
Contextual Info: HI-SINCERITY Spec. No. : MOS200907 Issued Date : 2009.03.09 Revised Date : Page No. : 1/5 MICROELECTRONICS CORP. H4422S • N-Channel Enhancement-Mode MOSFET 30V, 11A 8-Lead Plastic SO-8 Package Code: S H4422S Symbol & Pin Assignment Features • RDS(on)=13.5mΩ@VGS=10V, ID=11A

H2305

Abstract: MOSFET 20V 45A mark tp sot23
Contextual Info: HI-SINCERITY Spec. No. : MOS200807 Issued Date : 2008.11.12 Revised Date :2009,12,15 Page No. : 1/5 MICROELECTRONICS CORP. H2305N H2305N Pin Assignment & Symbol P-Channel Enhancement-Mode MOSFET -20V, -4.5A 3 1 2 3-Lead Plastic SOT-23 Package Code: N Pin 1: Gate 2: Source 3: Drain