mb832000
Contextual Info: UJITSU M I CROE LE CT RO NI CS FU JITSU 23E D • 374=57^2 000^076 T ■ C M O S ^ M -B IT # § t^ S I& MASK-PROGRAMMABLE' READONLY, M E M O R Y MB832000 April 1968 Edition 1.0 -T-MU-15- 1S 2M-BIT 262,144 x 8 CMOS READ ONLY MEMORY The Fujitsu MB832000 Is a CMOS Sl-gate m ask-programmable static read
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mb832000-t-mu-15-u00108sb832000+332-leaddip-32p-m0132007s
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mb832000
Abstract: fujitsu 1988
Contextual Info: FUJITSU CMOS 2M-BIT MASK-PROGRAMMABLE READ ONLY MEMORY MB832000 April 1988 Edition 1.0 2M-BIT 262,144 x 8 CMOS READ ONLY MEMORY The Fujitsu MB8320Q0 is a CMOS Si-gate mask-programmable static read only memory organized as 262,144 words by 8 bits. The MB832000 has TTL-com patlble I/O and 3-sta te output level -with
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mb832000mb8320q032-leaddip-32p-m01+2d32007s-1cfujitsu 1988
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GI9332
Abstract: mb831000 MB834000 23C2001 23C1001 23c1000 UPD23C1001 23c4001 HN62304 mb832000
Contextual Info: PROM/ROM index and cross reference 1.9 Jan 16, 2000 -Fujitsu 256K 32k x 8 MB83256 28 pin 512k 64k x 8 MB83512 (28 pin) 1M 128k x 8 MB831000 (32 pin) 2M 256k x 8 MB832000 (32 pin) 4M 256k x 16 / 512k x 8
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mb83256mb83512mb831000mb832000+13mb834100mb834000mb83420027c1024h27c101a27c301agi933223c200123c100123c1000upd23c100123c4001hn62304
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eprom rom 512k x 16 bits
Contextual Info: Section 1 >8-Pin Memory Cards — At a Glance P a g * Technology 1-3 1-17 1-19 Mask ROM Mask ROM EPROM 1-39 OTPROM 1-57 SRAM D«vlc« Ace«*a Tim« Emb«dd*d 1C* MB98A5090 250 ns MB834200A x 1 pc 96A5100 250 ns MB834200A x 2 pcs 98A5110 250 ns MB832000 x 8 pcs
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mb98a509096a510098a5110mb98a5120+798a513098a5140mb98a608a98a609a96a610amb98a6070eprom rom 512k x 16 bits
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MB832000A
Abstract: MB832000 A831D MBM27C2001
Contextual Info: September 1992 Edition 1.0 FUJITSU DATA SHEET MB832000A CMOS 2M-BIT MASK READ ONLY MEMORY 256K x 8 CMOS MASK READ ONLY MEMORY The Fujitsu MB832000A is a CMOS Si-gate mask-programmable static read only memory organized as 262,144 words by 8 bits. The MB832000A has TTL-compatible I/O and 3-state output level with fully-static
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mb832000a200nsmb832000a831d+1mbm27c2001
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A5090
Abstract: A5090-25 A509-0 MB832
Contextual Info: February 1990 E d it,o n 2 - ° DATA SHEET = cP T^ ¥ ï ï ï ' T ' f ' ï f _ r Ulli bu MB 98A 5090-25y 5100-25, 5110-25 MASK ROM MEMORY CARD MASK PROGRAMMABLE READ ONLY MEMORY CARD 512K/1M/2M-BYTE DESCRIPTION The Fujitsu MB9BA5090/500/5110 are Mask Programmable Read Only Memory
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5090-25y512k/1m/2m-bytemb9ba5090/500/5110mbb34200a+8mb83200068-pind-6000pv0049-902a2a5090a5090-25a509-0mb832
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toshiba 32k*8 sram
Abstract: M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 KM41C464 TC51464
Contextual Info: FUNCTION GUIDE MEMORY ICs 3. CROSS REFERENCE GUIDE 3.1 DRAM Density 64 K X 1 256K X 1 X4 1M X X 4M X X 3.2 Mode Org. 1 4 1 4 Samsung Toshiba Hitachi Fujitsu NEC MSM3764 KM4164 Page Okl F. Page KM41C256 TC51256 Nibble KM41C257 TC51257 HM51256 S. Column KM41C258
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km4164km41c256km41c257km41c258+15km41c464km41c466km41c1000km41c1001km41c1002km44c256toshiba 32k*8 sramm5m23c100m5m5265seeq dq2816am5m23c400mb832001hitachi 64k dramtc511000tc51464
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uPD23C4000
Abstract: 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. C R O S S REFEREN CE GUIDE 3.1 Video RAM Density 256K 512K Feature Minimum Organization 64Kx4 Samsung KM424C64 Minimum 64Kx8 KM428C64 Minimum 256KX4 KM424C256 Micron Hitachi Ti HM53461 2 TMS4461 HM534251 TM S44C250 TC524256A
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64kx4km424c64mt42c4064upd41264+16upd42264hm53461tms446164kx8256kx4km428c64upd23c400093c46 atmelsony cross referenceatmel 93c66hn62404p93c46lrom at29c010hitachi sram cross referencex2864aupd23c2000
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MB834000
Abstract: M5M23160 MB834100 MB838000 MB832000 SGS M27C256 I27C256 KM23C1010 M27C256 M27C256 intel
Contextual Info: CROSS-REFERENCE GUIDE 1. EPROM CAPACITY CONFIGRUATION MACRONIX INTEL AMD N.S. S.G.S. 256K 32K x 8 MX27C256 i27C256 Am27C256 NM27C256 M27C256 512K 64K x 8 MX27C512 i27C512 Am27C512 NM27C512 M27C512 32K x 16 MX27C516 128K x 8 MX27C1000 i27C010 Am27C010 NM27C010
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mx27c256i27c256am27c256nm27c256+14m27c256mx27c512i27c512am27c512nm27c512m27c512mb834000m5m23160mb834100mb838000mb832000sgs m27c256km23c1010m27c256 intel
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41C1000
Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
Contextual Info: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258
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41c25641c25741c25841c464+1441c46641c100044c25644c25844c1002tc51257fujitsu 814100tc 55464 toshibahn62304hn623257658128816bhn62324m7202a
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41C464
Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
Contextual Info: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page
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41c25641c25741c25841c464+1441c46641c100041c100244c25644c25841c4000tc55b8128424170 neccy7019944c1000iot7164hn62308bphn62404ptc5116100
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K93C46
Abstract: 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 256K X 1 F. P a g e KM 41C 256 TC 51256 X 1 X 4 4M X 1 X 4 , 1 6M To sh iba M od e X 4 1M Sam su ng Org. H ita ch i Fu jitsu HM 51256 M B81256 NEC /iP D 4 1 2 5 6 N ib b le KM 41C 257
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416c25614800a14900a514170b+16514280bkm23c16000gkm23c16100gkm23c16000fpkm23c16100fphn624017fbk93c4693cs46nmb832001hn6230841c100093c46ln41464hn623257hm63832dt71256
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TC55B8128
Abstract: KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 2 56 K 1M Org. x1 Toshiba F Page T C 51256 N ib b le K M 4 1C 2 5 7 T C 51257 H ita ch i H M 51 2 5 6 — F u jitsu M B 8 12 5 6 M B 8 12 5 7 NEC /P D 41256 — Oki M S M 5 1C 2 5 6
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tc511001tc514101514170b514280b+16tc5316200pkm2x16100km23c16000gkm23c16100gkm23c16000fpkm23c16100fptc55b8128km23c4000agtc534000afhn62308bptc551632hitachi crossmb8368512uhitachi 64k dramtc55b4256
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TC55B4257
Abstract: 93C46L UPD23C4000 atmel 93c66 KM628512 Hitachi SRAM cross reference atmel 93c57 TC55B465 upd23c8000 93c56v
Contextual Info: CROSS REFERENCE GUIDE MEMORY ICs 3.1 Video RAM Density 256K Feature Minimum Organization 64K x4 Samsung KM424C64 Micron Toshiba NEC Hitachi Ti HM53461 2 TMS4461 HM534251 TMS44C250 TC524256A HM534251A SMJ44C250 TC524256B HM534252 MT42C4064 /a PD41264 /<PD42264
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km424c64mt42c4064upd41264upd42264+16hm53461tms4461km428c64km424c256km424c256atc524256tc55b425793c46lupd23c4000atmel 93c66km628512hitachi sram cross referenceatmel 93c57tc55b465upd23c800093c56v
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al 232 nec
Abstract: TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference
Contextual Info: CROSS REFERENCE GUIDE MEMORY ICs CROSS REFERENCE GUIDE 1 .DRAM Density 256K Org. X1 x4 1M x1 X4 4M X1 x4 Mode Toshiba Hitachi Fujitsu NEC Oki MSM51C256 F.Page KM41C256 TC51256 HM51256 MB81256 Nibble KM41C257 TC51257 — MB81257 — S. Column KM41C258 TC51258
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km41c256km41c257km41c258km41c464+16km41c466km41c1000km41c1001km41c1002km44c256km44c258al 232 nectc55b4257mb832001nm9306eeprom cross referenced41264tc5116100hn28c256nm9307oki cross reference
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