M28F210 Search Results

Contextual Info: S G S -1 H 0 M S 0 N 5 7 . » « m i » « ® M28F210 M28F220 2 Megabit x8 or x16, Block Erase FLASH MEMORY PRELIMINARY DATA DUAL x8 and x16 ORGANIZATION SMALL SIZE PLASTIC PACKAGES TSOP56 and S044 MEMORY ERASE in BLOCKS - One 16K Byte or 8K Word Boot Block (top or

28F220

Abstract: 3542J 3D IC
Contextual Info: 5 7 . S C S -T H O M S O N M28F210 M28F220 •LI 2 Megabit x8 or x16, Block Erase FLASH MEMORY PR ELIM IN A R Y DATA ■ DUAL x8 and x16 ORGANIZATION ■ SMALL SIZE PLASTIC PACKAGES TSOP48 and S044 ■ MEMORY ERASE in BLOCKS - One 16K Byte or 8K Word Boot Block (top or

M28F210

Abstract: M28F220
Contextual Info: M28F210 M28F220 2 Megabit x8 or x16, Block Erase FLASH MEMORY PRELIMINARY DATA DUAL x8 and x16 ORGANIZATION SMALL SIZE PLASTIC PACKAGES TSOP48 and SO44 MEMORY ERASE in BLOCKS – One 16K Byte or 8K Word Boot Block (top or bottom location) with hardware write and

M28F210

Abstract: M28F220
Contextual Info: M28F210 M28F220 2 Megabit x8 or x16, Block Erase FLASH MEMORY PRELIMINARY DATA DUAL x8 and x16 ORGANIZATION SMALL SIZE PLASTIC PACKAGES TSOP48 and SO44 MEMORY ERASE in BLOCKS – One 16K Byte or 8K Word Boot Block (top or bottom location) with hardware write and

TSOP40

Abstract: M28F210 M28F220 mil-std-883* 2015
Contextual Info: QUALIFICATION REPORT M28F210/220, 2Mbit x16 and M28F211/221, 2 Megabit (x8) FLASH MEMORY in SO44, TSOP48 and TSOP40 INTRODUCTION The M28F210/220 is a 2Megabit FLASH Memory Boot Block Dual Power Supply (5/12V) organised as 256Kx8 bits or 128Kx16 bits. The M28F211/221 is a 2 Megabit FLASH Memory Boot Block Dual Power

mwsl

Abstract: M28F210 M28F220 TSOP56
Contextual Info: SGS-THOMSON M28F210 M28F220 iìain e[R ì(S ig n ig i5 ìrrsìiò )iM [i(6 g 2 Megabit (x8 or x16, Block Erase) FLASH MEMORY PRELIM INARY DATA DUAL x8 and x16 ORGANIZATION SMALL SIZ E PLASTIC PACKAGES TSOP56 and S044 MEMORY ER A SE in BLO CKS - One 16K Byte or 8K Word Boot Block (top or

M28F220

Contextual Info: M28F210 M28F220 2 Megabit x8 or x16, Block Erase FLASH MEMORY DATA BRIEFING DUAL x8 and x16 ORGANIZATION MEMORY ERASE in BLOCKS – One 16K Byte or 8K Word Boot Block (top or bottom location) with hardware write and erase protection – Two 8K Byte or 4K Word Key Parameter

TSOP48 Thermal

Contextual Info: QUALIFICATION REPORT M28F210/220, 2Mbit x16 and M28F211/221, 2 Megabit (x8) FLASH MEMORY in SO44, TSOP48 and TSOP40 INTRODUCTION The M28F210/220 is a 2Megabit FLASH Memory Boot Block Dual Power Supply (5/12V) organised as 256Kx8 bits or 128Kx16 bits. The M28F211/221 is a 2 Megabit FLASH Memory Boot Block Dual Power

ram 2015

Abstract: M93C56 M27256 M2764A M27C64A QRR9804 M29F105 Part Marking STMicroelectronics flash memory M87C257 m29f002
Contextual Info: QRR9804 QUALITY & RELIABILITY REPORT January 1998 to December 1998 - EPROM, Flash Memory, EEPROM and NVRAM Products INTRODUCTION STMicroelectronics manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and

BV-1 501

Abstract: mk48t08 SGS M27C256 mk48t18 st microelectronics datecode M48T35 st microelectronics datecode M27C256 SGS-THOMSON ST25C16 CP 1005 marking 339 st microelectronics
Contextual Info: QRR9704 QUALITY & RELIABILITY REPORT January 1997 to December 1997- EPROM, FLASH Memory, EEPROM and NVRAM Products INTRODUCTION ST Microelectronics manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and

MK48T08

Abstract: mk48t18 M27128A M2716 M2732A M2764A QRR9802 Marking STMicroelectronics m24c32 m28c64d M24C64
Contextual Info: QRR9802 QUALITY & RELIABILITY REPORT July 1997 to June 1998 - EPROM, Flash Memory, EEPROM and NVRAM Products INTRODUCTION STMicroelectronics manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and

intel pa28f400

Abstract: AN907 M28F220 programming codes M28F210 M28F211 M28F410 M28F411 M28F420 M28W231
Contextual Info: AN907 APPLICATION NOTE Compatibility between St Boot Block and Intel SmartVoltage Flash Memories by Patrick PIGNON INTRODUCTION Flash memory is proving to be a popular choice for the storage of information which is to be updated in-circuit at a later time after production. The larger capacity available and lower cost with the Flash

HD637B01VOP

Abstract: HD63701VOP HD63705VOP hd63701xop HD637A01VOP HD64F3048F16 MB8516 HD637B01YOP HD63701YOP lh57257
Contextual Info: ＡＦ−９７００ ＳＥＲＩＥＳ ＤＥＶＩＣＥ ＬＩＳＴ ＡＦ−９７０４ ＥＰＲＯＭ ＡＦ−９７０５ ＭＯＳ ＡＦ−９７０６ ＥＰＲＯＭ ＡＦ−９７０７ ＰＣ ＡＦ−９７２１ ＧＡＮＧ ＰＲＯＧＲＡＭＭＥＲ

intel pa28f400

Abstract: AN907 AN907 applications E28F002BV-T M28F210 M28F211 M28F221 M28W231 28F400BV-B pa28f400
Contextual Info: AN907 APPLICATION NOTE COMPATIBILITY BETWEEN ST BOOT BLOCK AND INTEL SMARTVOLTAGE FLASH MEMORIES by Patrick PIGNON INTRODUCTION Flash memory is proving to be a popular choice for the storage of information which is to be updated in-circuit at a later time after production. The larger capacity available and lower cost with the Flash

28F220

Abstract: aish
Contextual Info: M 28F210 M 28F220 S G S -1 H 0 M S 0 N 5 7 . EO glS(a i[Li re©li!!lD(gi 2 Megabit (x8 or x16, Block Erase) FLASH MEMORY PRELIMINARY DATA • DUAL x8 and x16 ORGANIZATION ■ SMALL SIZE PLASTIC PACKAGES TSOP48 and S044 ■ MEMORY ERASE in BLOCKS - One 16K Byte or 8K Word Boot Block (top or

A1273

Contextual Info: S G S -T H O M S O N G f. M28F1001 ilLt 1024K 128 x 8 CMOS FLASH MEMORY ADVANCE DATA • FLASH ELECTRICAL CHIP ERASE IN 1 SEC­ OND RANGE. ■ PRESTO F PROGRAMMING TYPICAL BYTE PROGRAM TIME : 100 ms. ■ 12 V VPP SUPPLY. ■ 100 TO 10.000 ERASE/PROGRAM CYCLES.

intel pa28f400

Abstract: AN907 AN907 applications
Contextual Info: AN907 APPLICATION NOTE COMPATIBILITY BETWEEN ST BOOT BLOCK AND INTEL SMARTVOLTAGE FLASH MEMORIES by Patrick PIGNON INTRODUCTION Flash memory is proving to be a popular choice for the storage of information which is to be updated in-circuit at a later time after production. The larger capacity available and lower cost with the Flash

QRR0001

Abstract: ST16 m29f002 065um ST M27C256B PART MARKING FM27c1024 QRR000
Contextual Info: QRR0001 QUALITY & RELIABILITY REPORT April 1999 March 2000 EPROM, Flash Memory, EEPROM, NVRAM and SMARTCARD Products INTRODUCTION STMicroelectronics manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and

M96S66

Abstract: tsop 3846 ST M27C256B PART MARKING M27128 M2764A QRR9903
Contextual Info: QRR9903 QUALITY & RELIABILITY REPORT October 1998 September 1999 - EPROM, Flash Memory, EEPROM and NVRAM Products INTRODUCTION STMicroelectronics manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and

M27128

Abstract: M2764A QRR9902
Contextual Info: QRR9902 QUALITY & RELIABILITY REPORT July 1998 to June 1999 - EPROM, Flash Memory, EEPROM and NVRAM Products INTRODUCTION STMicroelectronics manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and

25X25

Abstract: Marking STMicroelectronics m27c256 QRR9904 ST16 M27C256 M27C320
Contextual Info: QRR9904 QUALITY & RELIABILITY REPORT January 1999 December 1999 EPROM, Flash Memory, EEPROM, NVRAM and SMARTCARD Products INTRODUCTION STMicroelectronics manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and

M25C

Abstract: Marking STMicroelectronics m27c256 QRR0001 QRR0002 ST16 M29W160 M275 M27C512 marking QRR000 ST M27C256B PART MARKING
Contextual Info: QRR0002 QUALITY & RELIABILITY REPORT July 1999 June 2000 EPROM, Flash Memory, EEPROM, NVRAM and SMARTCARD Products INTRODUCTION STMicroelectronics manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and

256k x8 SRAM 5V

Abstract: ST95080 rom 1K x8 mod 10 asynchronous ST1335 M28V210 M6280 3.3 -35Y M48Z09
Contextual Info: MEMORY PRODUCTS SELECTOR GUIDE A D) OTP Memory - 5V range Type M27C64A M27C256B M87C257 M27C512 M27C1001* M27C1024* M27C2001* M27C405* M27C4001 M27C4002 M27C801 Size 64K 256K 256K 512K 1 Meg 1 Meg 2 Meg 4 Meg 4 Meg 4 Meg 8 Meg Organisation Access Time ns)

M93C46BN1

Abstract: PLCC32 512k M24C32MN1 M93S46RBN1 ST24C04M1 M2716-1F1 200N1 M28F512-15C1 M27C1024-12F7 M27C256B-20C7
Contextual Info: MEMORIES and SMARTCARD PRODUCTS NON VOLATILE MEMORIES UV EPROM - NMOS Size Part Number Organis. Speed ns VCC Range ICC / Stby Temperature Range (°C) Package 16K M2716-1F1 x8 350 5V ± 10% 100mA/25mA 0 to 70 FDIP24W 16K M2716-1F6 x8 350 5V ± 10% 100mA/25mA