28F210 Search Results

28F220

Abstract: aish
Contextual Info: M 28F210 M 28F220 S G S -1 H 0 M S 0 N 5 7 . EO glS(a i[Li re©li!!lD(gi 2 Megabit (x8 or x16, Block Erase) FLASH MEMORY PRELIMINARY DATA • DUAL x8 and x16 ORGANIZATION ■ SMALL SIZE PLASTIC PACKAGES TSOP48 and S044 ■ MEMORY ERASE in BLOCKS - One 16K Byte or 8K Word Boot Block (top or

27A6

Contextual Info: 28F210 1048576-BIT FLASH MEMORY I SMJS210B - DECEMBER 1892 - REVISED JUNE 1995 N PACKAGE TOP VIE W Pin Compatible With Existing 1-Megabit EPROMs All Inputs/Outputs TTL Compatible Vcc Tolerance ±10% Maximum Access/Minimum Cycle Time ’28F210-10 100 ns

MP 1048 EM

Abstract: 28f210
Contextual Info: 28F210 1 048576-BIT FLASH MEMORY SMJS21 OC-D E C EM BE R 1 9 9 2 - REVISED MAY 1996 FN PACKAGE TOP VIE W O r g an iz a t io n . . . 64K x 1 6 Flash M e m o r y Pi n C o m p a t i b l e Wi t h E x i s t i n g 1 - M e g a b i t EPROMs All I n p u t s / O u t p u t s T T L C o m p a t i b l e

Contextual Info: S G S -1 H 0 M S 0 N 5 7 . » « m i » « ® 28F210 M28F220 2 Megabit x8 or x16, Block Erase FLASH MEMORY PRELIMINARY DATA DUAL x8 and x16 ORGANIZATION SMALL SIZE PLASTIC PACKAGES TSOP56 and S044 MEMORY ERASE in BLOCKS - One 16K Byte or 8K Word Boot Block (top or

MX28F2100B

Contextual Info: Introduction Selection Guide PRELIMINARY 28F2100B 2M-BIT 256K x 8/128K x 16 CMOS FLASH MEMORY FEATURES • 262,144x8/131,072x16 switchable • Fast access time: 70/90/120ns • Low power consumption – 50mA maximum active current – 100 µAmaximum standby current

MX28F2100T

Abstract: MX28F2100TTC90
Contextual Info: Introduction Selection Guide PRELIMINARY 28F2100T 2M-BIT 256K x 8/128K x 16 CMOS FLASH MEMORY FEATURES • 262,144x8/131,072x16 switchable • Fast access time: 70/90/120ns • Low power consumption – 50mA maximum active current – 100 µAmaximum standby current

TDA0161 equivalent

Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:

Contextual Info: \p M E u m m h M Y IW K IC M X 2 8 F 2 1 OOB 2M -B IT 256K x 8 / 1 28 K x 1 6 CM OS FLASH M EM ORY FEATURES • 262,144x8/131,072x16 switchable • Fast access time: 70/90/120ns • Low power consumption - 50mA maximum active current - 10OnAmaximum standby current

Contextual Info: [ P : R iiy [ lD Î M [ F S Y M X IC M 28F2100B 2M-BIT[256K x 8 /1 2BK x 1 6 CMOS FLASH MEMORY FEATURES 262,144x8/131,072x16 switchable Fast access time: 70/90/120ns Low power consumption - 50mA maximum active current - 100 nAmaximum standby current Programming and erasing voltage 12V + 7%

28F220

Abstract: 3542J 3D IC
Contextual Info: 5 7 . S C S -T H O M S O N 28F210 M28F220 •LI 2 Megabit x8 or x16, Block Erase FLASH MEMORY PR ELIM IN A R Y DATA ■ DUAL x8 and x16 ORGANIZATION ■ SMALL SIZE PLASTIC PACKAGES TSOP48 and S044 ■ MEMORY ERASE in BLOCKS - One 16K Byte or 8K Word Boot Block (top or

28f210

Abstract: TMS28F210
Contextual Info: 28F210 65536 BY 16-BIT FLASH MEMORY SMJS210D – DECEMBER 1992 – REVISED AUGUST 1997 D D D D 6 5 DQ12 DQ11 DQ10 DQ9 DQ8 VSS NC DQ7 DQ6 DQ5 DQ4 4 3 W NC A15 A14 2 1 44 43 42 41 40 7 39 8 38 9 37 10 36 11 35 12 34 13 33 14 32 15 31 16 30 17 29 A13 A12 A11

Contextual Info: in t û l PBEyaSIOKlÄIR' 28F200BX-TL/BL, 28F002BX-TL/BL 2-MBIT 128K x 16, 256K x 8 LOW POWER BOOT BLOCK FLASH MEMORY FAMILY • Low Voltage Operation for Very Low Power Portable Applications — VCc = 3.3V ±0.3V ■ x8/x16 Input/Output Architecture — 28F200BX-TL, 28F200BX-BL

Contextual Info: INTEL CORP {MEMORY/PLD/ in tc J L7E I> • 4fl2fal7fci D 0 f l n t , 2 WSEOBSIOIiflM' 28F200BX-TL/BL, 28F002BX-TL/BL 2-MBIT 128K x 16, 256K x 8 LOW POWER BOOT BLOCK FLASH MEMORY FAMILY ■ Low Voltage Operation for Very Low Power Portable Applications — Vcc = 3.3V ±0.3V

TMS28F210

Contextual Info: 28F210 65536 BY 16-BIT FLASH MEMORY . • • • • • • • • • • • SMJS21OP- DECEMBER 1992 - REVISED AUGUST 1997 Organization . . . 65S36 by 16-Bits Pin Compatible With Existing 1-Megabit EPROMs

28F002-T

Contextual Info: APPLICATION NOTE 2M FLASH MEMORY Yes. You can replace Intel 2M flash very easily with Macronix’s flash. Intel Part Number 28F200-T 28F200-B 28F002-T 28F002-B 28F020 Replace with 28F2100T 28F2100B MX28F002-T MX28F002-B MX28F2000P Configuration, Package

Contextual Info: 28F210 65536 BY 16-BIT FLASH MEMORY SMJS210D - DECEMBER 1992 - REVISED AUGUST 1997 • • • • • • FN PACKAGE TOP VIEW CO ^ LO a a a 8: o 8 o £ 2 Q O OIUJ > z > l§ z < < m t —t f - i r - i i —i n i —i r - i i —i r - i r - 1 s— 6 5 4 3 2 1 44 43 42 41 40

MX28F2100T

Contextual Info: INDEX PRELIMINARY 28F2100T 2M-BIT [256K x 8/128K x 16] CMOS FLASH MEMORY FEATURES • 262,144x8/131,072x16 switchable • Fast access time: 70/90/120ns • Low power consumption – 50mA maximum active current – 100 uA maximum standby current • Programming and erasing voltage 12V ± 7%

Contextual Info: 2 M -B IT 2 5 6 K x 8 / 1 2 8 K x 1 6 C M O S F L A S H M E M O R Y FEATURES • 262,144x8/131,072x16 switchable • Fast access time: 70/90/120ns • Low power consumption - 50mA maximum active current - 10OnAmaximum standby current • Programming and erasing voltage 12V ± 7%

27C4002

Abstract: 27C1024 27HC1024 28f210 27c516 27C2048 27C220 27C4096 Hitachi j-16 27C210l
Contextual Info: AD44/60 file:///AD44.HTM t I P pro duc t d a ta sh eet AD44 and AD60 Package Converters for Word Wide EPROMs PLCC jProduct Code Pins on skt Pins on Base ¡Wiring Code Package Base pitch" Miscellaneous I P ~ j ~ ~7<T " ClamsheÎl ^ AD44 : 44 ~: 40 j~ ~ .08

NEC D2732

Abstract: 41C1000 41256 81c4256 6264 SRAM 44256 dram NEC 2732 nec 4217400 814400 Texas Instruments eprom 2732
Contextual Info: New Page 1 DRAM ORGANIZATION/ DENSITY FUJISTU GOLDSTAR HITACHI HYNDAI MB GM HM HY 256K x 1 256K 81256 71C256 51256 MICRON MT 53C256 1256 MITSUBISHI M5M 4256 1M x 1(1M) 81C1000 71C1000 511000 531000 4C1024 41000 256K x 4(1M) 81C4256 71C4256 514256 534256 4C4256

28F2100

Abstract: block diagram for automatic room power control MX28F2100B 28F2100B-70
Contextual Info: PRELIMINARY 28F2100B 2M-BIT [256K x 8/128K x 16] CMOS FLASH MEMORY FEATURES • 262,144x8/131,072x16 switchable • Fast access time: 70/90/120ns • Low power consumption – 50mA maximum active current – 100uA maximum standby current • Programming and erasing voltage 12V ± 7%

27C4002

Abstract: 27C210A M5M27C102J 32 pin plcc socket to dil AT27HC1024 AT27C1024L-J AT27C1024 AT27LV1024 AD44 AD60
Contextual Info: PRODUCT DATA SHEET AD44 Farnell 479-858 and AD60 Package Converters for Word Wide EPROMs (PLCC) Product Code Pins on skt Pins on Base Wiring Code Package Base pitch" Miscellaneous AD44 44 40 08 P .6 Clamshell Product Code Pins on skt Pins on Base Wiring

Contextual Info: PRELIMINARY 28F2100T 2M-BIT [256K x 8/128K x 16] CMOS FLASH MEMORY FEATURES • 262,144x8/131,072x16 switchable • Fast access time: 70/90/120ns • Low power consumption – 50mA maximum active current – 100 uA maximum standby current • Programming and erasing voltage 12V ± 7%

27A6

Abstract: A424J
Contextual Info: 28F210 1 048 576-BIT FLASH ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY SM JS210-DEC EMBER 1992 O rganization. . . 64K x 16 Flash Memory N PACKAGEt Pin Compatible with Existing 1-Megabit EPROMs All Inputs/Outputs TTL Compatible Maximum Access/Minimum Cycle Time: