M28F220 Search Results

Contextual Info: SGS-THOMSON D »iILi 'irM D E Ì M28F220 2 Mb (x8/x16, Block Erase FLASH MEMORY • 5V ± 10% SUPPLY VOLTAGE ■ 12V± 5% or ± 10% PROGRAMMING VOLTAGE ■ FAST ACCESS TIME: 60ns ■ PROGRAM/ERASE CONTROLLER (P/E.C.) ■ AUTOMATIC STATIC MODE ■ MEMORY ERASE in BLOCKS

Contextual Info: S G S -1 H 0 M S 0 N 5 7 . » « m i » « ® M28F210 M28F220 2 Megabit x8 or x16, Block Erase FLASH MEMORY PRELIMINARY DATA DUAL x8 and x16 ORGANIZATION SMALL SIZE PLASTIC PACKAGES TSOP56 and S044 MEMORY ERASE in BLOCKS - One 16K Byte or 8K Word Boot Block (top or

M28F220

Abstract: T2032 T432
Contextual Info: w - SCS-THOMSON M28F220 k7 # . IM [MDiHI ènnMPM]D(§Ii 2 Mb (x8/x16, Block Erase FLASH M EM O RY • 5V ± 10% SUPPLY VOLTAGE ■ 12 V ± 5% o r ± 10% PROGRAMMING VOLTAGE ■ FAST ACCESS TIME: 60ns ■ PROGRAM/ERASE CONTROLLER (P/E.C.) ■ AUTOMATIC STATIC MODE

28F220

Contextual Info: GF. SGS-1H0MS0N M28F220 2 Mb x8/x16, Block Erase FLASH MEMORY DATA BRIEFING • 5V ± 10% SUPPLY VOLTAGE ■ 12V ± 5% or ± 10% PROGRAMM ING VOLTAGE ■ FAST ACCESS TIM E: 60ns ■ PROGRAM /ERASE CO NTROLLER (P/E.C.) ■ AUTOMATIC STATIC MODE ■ M EM ORY ERASE in BLOCKS

AN1004

Abstract: M28F220 M28F410 M28F411 M28F420 M28W431
Contextual Info: AN1004 APPLICATION NOTE WRITE PROTECT FUNCTION for 2Mb and 4Mb BOOT BLOCK FLASH MEMORIES INTRODUCTION The performance of the 2Mb and 4Mb Dual Voltage Boot Block Flash memories, M28F220, M28F420, M28F411, M28W431 has been enhanced by the introduction of a Boot Block Write Protect function using

QR117

Abstract: M28F220 QR111
Contextual Info: QUALIFICATION REPORT M28F220 T6: 2 Mb x8/x16 FLASH MEMORY in SO44, ANAM ASSEMBLY LINE INTRODUCTION The M28F220 ia s 2 Mb Dual Supply (5/12V) Boot Block Flash memories organised as 256K bytes of 8 bits each or 128K words of 16 bits each. It is manufactured in the SGS-THOMSON Advanced CMOS 0.6

Contextual Info: ¿ V M28F220 2 Mbit 256Kb x8 or 128Kb x16, Block Erase Flash Memory • 5V ±10% SUPPLY VOLTAGE ■ 12V ±5% or ±10% PROGRAMMING VOLTAGE ■ FAST ACC ESS TIME: 60ns ■ PROGRAM/ERASE CONTROLLER (P/E.C.) ■ AUTOMATIC STATIC MODE ■ MEMORY ERASE in BLOCKS

M28F220

Abstract: AN1004 M28F410 M28F411 M28F420 M28W431
Contextual Info: AN1004 APPLICATION NOTE Write Protect Function for 2 Mbit and 4 Mbit Boot Block Flash Memories INTRODUCTION The performance of the 2 Mbit and 4 Mbit Dual Voltage Boot Block Flash memories, M28F220, M28F420, M28F411, M28W431 has been enhanced by the introduction of a Boot Block Write Protect function using

28F220

Abstract: 3542J 3D IC
Contextual Info: 5 7 . S C S -T H O M S O N M28F210 M28F220 •LI 2 Megabit x8 or x16, Block Erase FLASH MEMORY PR ELIM IN A R Y DATA ■ DUAL x8 and x16 ORGANIZATION ■ SMALL SIZE PLASTIC PACKAGES TSOP48 and S044 ■ MEMORY ERASE in BLOCKS - One 16K Byte or 8K Word Boot Block (top or

M28F220

Abstract: DQ0-DQ14
Contextual Info: M28F220 2 Mb x8/x16, Block Erase FLASH MEMORY 5V ± 10% SUPPLY VOLTAGE 12V ± 5% or ± 10% PROGRAMMING VOLTAGE FAST ACCESS TIME: 60ns PROGRAM/ERASE CONTROLLER (P/E.C.) AUTOMATIC STATIC MODE MEMORY ERASE in BLOCKS – Boot Block (Bottom location) with hardware

M28F220

Contextual Info: SGS-THOMSON M28F220 !H i !M [ !D 0 © § 2 Mb (x8/x16, Block Erase) FLASH M EM O RY • 5 V ± 10% SUPPLY VOLTAGE ■ 1 2 V ± 5% or ± 10% PROGRAMMING VOLTAGE ■ FAST ACCESS TIME: 60ns ■ PROGRAM/ERASE CONTROLLER (P/E.C.) ■ AUTOMATIC STATIC MODE ■ MEMORY ERASE in BLOCKS

M28F220

Contextual Info: SGS-THOMSON M28F220 !H i !M [ !D 0 © § 2Mb (x8/x16, Block Erase) FLASH M EM O RY • 5 V ± 10% SUPPLY VOLTAGE ■ 1 2 V ± 5% or ± 10% PROGRAMMING VOLTAGE ■ FAST ACCESS TIME: 60ns ■ PROGRAM/ERASE CONTROLLER (P/E.C.) ■ AUTOMATIC STATIC MODE ■ MEMORY ERASE in BLOCKS

M28F210

Abstract: M28F220
Contextual Info: M28F210 M28F220 2 Megabit x8 or x16, Block Erase FLASH MEMORY PRELIMINARY DATA DUAL x8 and x16 ORGANIZATION SMALL SIZE PLASTIC PACKAGES TSOP48 and SO44 MEMORY ERASE in BLOCKS – One 16K Byte or 8K Word Boot Block (top or bottom location) with hardware write and

M28F210

Abstract: M28F220
Contextual Info: M28F210 M28F220 2 Megabit x8 or x16, Block Erase FLASH MEMORY PRELIMINARY DATA DUAL x8 and x16 ORGANIZATION SMALL SIZE PLASTIC PACKAGES TSOP48 and SO44 MEMORY ERASE in BLOCKS – One 16K Byte or 8K Word Boot Block (top or bottom location) with hardware write and

Contextual Info: S G S -T H O M S O N D »iILi 'irM D E Ì M28F220 2Mb (x8/x16, Block Erase FLASH MEMORY • 5V ± 10% SUPPLY VOLTAGE ■ 12V± 5% or ± 10% PROGRAMMING VOLTAGE ■ FAST ACCESS TIME: 60ns ■ PROGRAM/ERASE CONTROLLER (P/E.C.) ■ AUTOMATIC STATIC MODE ■ MEMORY ERASE in BLOCKS

M28F220

Contextual Info: M28F220 2 Mbit 256Kb x8 or 128Kb x16, Boot Block Flash Memory 5V ± 10% SUPPLY VOLTAGE 12V ± 5% or ± 10% PROGRAMMING VOLTAGE FAST ACCESS TIME: 60ns PROGRAM/ERASE CONTROLLER (P/E.C.) AUTOMATIC STATIC MODE MEMORY ERASE in BLOCKS – Boot Block (Bottom location) with hardware

mwsl

Abstract: M28F210 M28F220 TSOP56
Contextual Info: SGS-THOMSON M28F210 M28F220 iìain e[R ì(S ig n ig i5 ìrrsìiò )iM [i(6 g 2 Megabit (x8 or x16, Block Erase) FLASH MEMORY PRELIM INARY DATA DUAL x8 and x16 ORGANIZATION SMALL SIZ E PLASTIC PACKAGES TSOP56 and S044 MEMORY ER A SE in BLO CKS - One 16K Byte or 8K Word Boot Block (top or

M28F220

Contextual Info: M28F210 M28F220 2 Megabit x8 or x16, Block Erase FLASH MEMORY DATA BRIEFING DUAL x8 and x16 ORGANIZATION MEMORY ERASE in BLOCKS – One 16K Byte or 8K Word Boot Block (top or bottom location) with hardware write and erase protection – Two 8K Byte or 4K Word Key Parameter

Contextual Info: £jJ SGS-THOMSON 0 iM&i ra(M0©S M28F220 2 Mb (x8/x16, Block Erase FLASH MEMORY • 5V ± 10% SUPPLY VOLTAGE ■ 12 V ± 5% or± 10% PROGRAMMING VOLTAGE ■ FAST ACCESS TIME: 60ns ■ PROGRAM/ERASE CONTROLLER (P/E.C.) ■ AUTOMATIC STATIC MODE ■ MEMORY ERASE in BLOCKS

M28F220

Abstract: DQ15A-1
Contextual Info: M28F220 2 Mbit 256Kb x8 or 128Kb x16, Boot Block Flash Memory DATA BRIEFING 5V ± 10% SUPPLY VOLTAGE 12V ± 5% or ± 10% PROGRAMMING VOLTAGE FAST ACCESS TIME: 60ns PROGRAM/ERASE CONTROLLER (P/E.C.) AUTOMATIC STATIC MODE MEMORY ERASE in BLOCKS – Boot Block (Bottom location) with hardware

TSOP40 Flash

Abstract: m48z32y M27V512 FDIP24W M27128A M2716 M27256 M2732A M27512 M2764A
Contextual Info: MEMORY PRODUCTS SELECTOR GUIDE A C) NMOS UV EPROM, 5V Operation Size 16 Kb 32 Kb 64 Kb 128 Kb 256 Kb 512 Kb Ref M2716 M2732A M2764A M27128A M27256 M27512 Description 16 Kb x8), 350 - 450ns, NMOS 32 Kb (x8), 200 - 450ns, NMOS 64 Kb (x8), 180 - 450ns, NMOS

FDIP24W

Abstract: M27128A M2716 M27256 M2732A M27512 M2764A M27C256B M27C64A M29F040
Contextual Info: MEMORIES and SMARTCARD PRODUCTS NON VOLATILE MEMORIES UV & OTP EPROM, 5V Operation Size References Description Package 16 Kb M2716 16 Kb x8 , 350 - 450ns, NMOS FDIP24W 32 Kb M2732A 32 Kb (x8), 200 - 450ns, NMOS FDIP24W M2764A 64 Kb (x8), 180 - 450ns, NMOS

Device-List

Abstract: cf745 04 p 24LC211 lattice im4a3-32 CF775 MICROCHIP 29F008 im4a3-64 ks24c01 ep320ipc ALL-11P2
Contextual Info: Device List Adapter List Converter List for ALL-11 JUL. 2000 Introduction T he Device List lets you know exactly which devices the Universal Programmer currently supports. The Device List also lets you know which devices are supported directly by the standard DIP socket and which

ram 2015

Abstract: M93C56 M27256 M2764A M27C64A QRR9804 M29F105 Part Marking STMicroelectronics flash memory M87C257 m29f002
Contextual Info: QRR9804 QUALITY & RELIABILITY REPORT January 1998 to December 1998 - EPROM, Flash Memory, EEPROM and NVRAM Products INTRODUCTION STMicroelectronics manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and