AI01299B Search Results

Contextual Info: SGS-THOMSON D »iILi 'irM D E Ì M28F220 2 Mb (x8/x16, Block Erase FLASH MEMORY • 5V ± 10% SUPPLY VOLTAGE ■ 12V± 5% or ± 10% PROGRAMMING VOLTAGE ■ FAST ACCESS TIME: 60ns ■ PROGRAM/ERASE CONTROLLER (P/E.C.) ■ AUTOMATIC STATIC MODE ■ MEMORY ERASE in BLOCKS

AN1004

Abstract: M28F220 M28F410 M28F411 M28F420 M28W431
Contextual Info: AN1004 APPLICATION NOTE WRITE PROTECT FUNCTION for 2Mb and 4Mb BOOT BLOCK FLASH MEMORIES INTRODUCTION The performance of the 2Mb and 4Mb Dual Voltage Boot Block Flash memories, M28F220, M28F420, M28F411, M28W431 has been enhanced by the introduction of a Boot Block Write Protect function using

M28F220

Abstract: AN1004 M28F410 M28F411 M28F420 M28W431
Contextual Info: AN1004 APPLICATION NOTE Write Protect Function for 2 Mbit and 4 Mbit Boot Block Flash Memories INTRODUCTION The performance of the 2 Mbit and 4 Mbit Dual Voltage Boot Block Flash memories, M28F220, M28F420, M28F411, M28W431 has been enhanced by the introduction of a Boot Block Write Protect function using

wp 39

Abstract: AN933 M28F211 M28F410 M28F411 M28W231
Contextual Info: AN933 APPLICATION NOTE WRITE PROTECT FUNCTION for 2Mb and 4Mb BOOT BLOCK FLASH MEMORIES INTRODUCTION The performance of the 2Mb and 4Mb Dual Voltage Boot Block Flash memories, M28F2xx and M28F4xx families has been enhanced by the introduction of a Write Protect function using the WP pin.

M28F220

Abstract: DQ0-DQ14
Contextual Info: M28F220 2 Mb x8/x16, Block Erase FLASH MEMORY 5V ± 10% SUPPLY VOLTAGE 12V ± 5% or ± 10% PROGRAMMING VOLTAGE FAST ACCESS TIME: 60ns PROGRAM/ERASE CONTROLLER (P/E.C.) AUTOMATIC STATIC MODE MEMORY ERASE in BLOCKS – Boot Block (Bottom location) with hardware

M28F220

Contextual Info: SGS-THOMSON M28F220 !H i !M [ !D 0 © § 2 Mb (x8/x16, Block Erase) FLASH M EM O RY • 5 V ± 10% SUPPLY VOLTAGE ■ 1 2 V ± 5% or ± 10% PROGRAMMING VOLTAGE ■ FAST ACCESS TIME: 60ns ■ PROGRAM/ERASE CONTROLLER (P/E.C.) ■ AUTOMATIC STATIC MODE ■ MEMORY ERASE in BLOCKS

M28F220

Contextual Info: M28F220 2 Mb x8/x16, Block Erase FLASH MEMORY DATA BRIEFING 5V ± 10% SUPPLY VOLTAGE 12V ± 5% or ± 10% PROGRAMMING VOLTAGE FAST ACCESS TIME: 60ns PROGRAM/ERASE CONTROLLER (P/E.C.) AUTOMATIC STATIC MODE MEMORY ERASE in BLOCKS – Boot Block (Bottom location) with hardware

Contextual Info: S G S -T H O M S O N D »iILi 'irM D E Ì M28F220 2Mb (x8/x16, Block Erase FLASH MEMORY • 5V ± 10% SUPPLY VOLTAGE ■ 12V± 5% or ± 10% PROGRAMMING VOLTAGE ■ FAST ACCESS TIME: 60ns ■ PROGRAM/ERASE CONTROLLER (P/E.C.) ■ AUTOMATIC STATIC MODE ■ MEMORY ERASE in BLOCKS

M28F220

Contextual Info: M28F220 2 Mbit 256Kb x8 or 128Kb x16, Boot Block Flash Memory 5V ± 10% SUPPLY VOLTAGE 12V ± 5% or ± 10% PROGRAMMING VOLTAGE FAST ACCESS TIME: 60ns PROGRAM/ERASE CONTROLLER (P/E.C.) AUTOMATIC STATIC MODE MEMORY ERASE in BLOCKS – Boot Block (Bottom location) with hardware

Contextual Info: £jJ SGS-THOMSON 0 iM&i ra(M0©S M28F220 2 Mb (x8/x16, Block Erase FLASH MEMORY • 5V ± 10% SUPPLY VOLTAGE ■ 12 V ± 5% or± 10% PROGRAMMING VOLTAGE ■ FAST ACCESS TIME: 60ns ■ PROGRAM/ERASE CONTROLLER (P/E.C.) ■ AUTOMATIC STATIC MODE ■ MEMORY ERASE in BLOCKS

M28F220

Abstract: DQ15A-1
Contextual Info: M28F220 2 Mbit 256Kb x8 or 128Kb x16, Boot Block Flash Memory DATA BRIEFING 5V ± 10% SUPPLY VOLTAGE 12V ± 5% or ± 10% PROGRAMMING VOLTAGE FAST ACCESS TIME: 60ns PROGRAM/ERASE CONTROLLER (P/E.C.) AUTOMATIC STATIC MODE MEMORY ERASE in BLOCKS – Boot Block (Bottom location) with hardware