LL53T31 Search Results

Contextual Info: N AMER PH ILI PS/ DI SC RE TE TOD D LL53T31 OOlOOflb T • m MAINTENANCE TYPES BYX32 SERIES _ J \ SILICON RECTIFIER DIODES Diffused silicon diodes in metal envelopes w ith ceramic insulation, intended fo r power rectifier application. The series consists o f the follow ing types:

BYV92-500M

Contextual Info: ii N AMER PHILIPS/DISCRETE MAINTENANCE TYPE 2SE D LL53T31 0 0 2 2 b b l 0 • B Y V 9 2 tjh H Ib b 7 -0 2 -1 ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in DO-5 metal envelopes, featuring low forward voltage drop,ultra fast reverse recovery times, very low stored charge and soft recovery

Contextual Info: PO40/44A _ OPTOCOUPLEh Optically coupled isolator consisting of an infrared emitting GaAIAs diode and a silicon npn photo­ transistor with accessible base in a SOT90B envelope. Designed for low input current and long life operation.

Contextual Info: • bbsa^ai □□25712 621 M A P X N AMER PHILIPS/DISCRETE PMBD 914 b?E D J V SILICON PLANAR EPITAXIAL HIGH SPEED DIODES Silicon epitaxial high speed diodes in a microminiature plastic envelope. It is intended for high-speed switching in thick and thin-film circuits.

philips 4859

Contextual Info: Philips Semiconductors bbS3T31 D05SB11 D1S • APX N AMER PHILIPS/DISCRETE Product specification b?E D NPN 9 GHz wideband transistor FEATURES c BFR505 PINNING • High power gain PIN DESCRIPTION • Low noise figure Code: N30 • High transition frequency

BGY41

Abstract: BGY41B BGY41A
Contextual Info: N AMER PHILIPS/BISCRETE I 86D 0 1 0 1 4 ObE D bbS3.131 0Q132SS M P T -w -d q -o r BGY40A BGY41A J _ BGY40B BGY41B U.H.F. POWER AMPLIFIER MODULES A range of broadband u.h.f. modules, primarily designed for mobile communication equipment, operating directly from 12 V electrical systems.

Contextual Info: BYX10G J V RECTIFIER DIODE Double-diffused glass-passivated rectifier diode in hermetically sealed axial-leaded glass envelope, intended for use in general industrial applications where a high repetitive peak reverse voltage is required. QUICK REFERENCE DATA

BFR29

Abstract: N-CHANNEL INSULATED GATE TYPE
Contextual Info: BFR29 N-CHANNEL INSULATED GATE MOS-FET Depletion type field-effect transistor in a TO-72 metal envelope with the substrate connected to the case. It is intended for linear applications in the audio as well as the i.f, and v.h.f. frequency region, and in cases where high input impedance, low gate leakage currents and low noise figures are of importance.

690 lc

Abstract: 100S BUV90F IEC134 NPN POWER DARLINGTON TRANSISTORS
Contextual Info: bTE D • bbS3T31 GOEöM'i'i IDE * A P X BUV90F i i N AUER PH ILIPS /DISCRETE _ y ' - SILICON DIFFUSED DARLINGTON POWER TRANSISTORS High-voltage, m onolithic npn power Darlington transistors in aSOT199 envelope intended fo r use in

bt 44a

Abstract: 12945 WE VQE 11 E WE VQE 23 F WE VQE 24 E P041 P043A TI210 331 Optocoupler
Contextual Info: P040/44A _ OPTOCOUPLEh I » Optically coupled isolator consisting of an infrared emitting GaAIAs diode and a silicon npn photo­ transistor with accessible base in a SOT90B envelope. Designed for low input current and long life operation.

ic TT 2222

Abstract: transistor tt 2222 BLY89A TT 2222 npn Transistor bly89a TT 2222 npn 2222 transistor yl 3710 dfv 36 mb 3712
Contextual Info: N AMER PHILIPS/DISCRETE GbE D 86D 0 1910 ^5 3 = 1 3 1 D T - G o m m a 3 3 5 -« BLY89A V.H.F. POW ER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized. Every

BDS61A

Abstract: smd npn darlington BDS61 BDS61B Darlington NPN Silicon Diode BDS61C smd diode LC 61 SMD 547 DIODE
Contextual Info: Philip» Comportants Datasheet status Product specification data of issue Apr* 1991 BDS 6 1 /6 1 A /6 1 B /6 1 C NPN Silicon Darlington power transistors DESCRIPTIO N PINNING - SOT223 DESCRIPTIO N base collector emitter collector PIN 1 2 3 4 NPN Silicon power transistors in a

BF966

Contextual Info: N ANER PHILIPS/DISCRETE ObE D • ■ bbS3T31 aQ12c17E 0 ■ ■ BF966 T'3 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package w ith source and substrate interconnected, intended fo r u.h.f. applications in television tuners and professional communication equipment.

Contextual Info: P h ilip ^ e m ic o n d u c to r^ ^ ^ • b b 5 3 T 31 Q0 3 1 b b 5 1ST H i APX Product specification NPN 6.5 GHz wideband transistor ^ — DESCRIPTION BFQ135 N AMER PHILIPS/DISCRETE bTE D PINNING NPN transistor in a 4-lead dual-emitter SOT172A1 envelope with a ceramic cap. All leads are

Contextual Info: _ J V TIP145 TIP146 TIP147 SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial-base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. SOT-93 plastic envelope. N-P-N complements are TIP140, TIP141

transistor 1264-1

Abstract: bfg90a transistor npn d 2058 BFG90 transistor J 4081 FP 801
Contextual Info: Philips Semiconductors IH ^ 53*131 GG3 1 2 2 2 13T H A P X ^^^Productspecification NPN 5 GHz wideband transistor “ 1 £ N DESCRIPTION A ME R BFG90A P H IL IP S /D IS C R E T E b 'I E D PINNING NPN transistor in a 4-lead dual-emitter plastic SOT 103 envelope.

Contextual Info: N AMER PHILIPS/DISCRETE ObE D PowerMOS transistor • bb53^31 0014731 T BUZ347 May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

BU808

Contextual Info: N AUER PHILIPS/DISCRETE 5SE D ^53=131 QOlfibS? 0 • I _J B U 808 y r s i - i t r SILICON DIFFUSED POWER TRANSISTOR High-voltage, high-speed, glass-passivated npn switching transistor in a TO-3 envelope, intended for use in three-phase AC motor control systems.

BFW11

Abstract: bfw11 equivalent BFW10 in drain resistance
Contextual Info: BFW10 BFW11 N-CHANNEL SILICON FETS Symmetrical n-channel silicon planar epitaxial junction field-effect transistors in TO-72 metal envelopes with the shield lead connected to the case. The transistors are designed for broad band amplifiers 0 to 300 MHz . Their very low noise at low frequencies makes these devices very suitable for differential

BY229

Abstract: 8y22 ir receiver diode 800R BY229-200 D8403 D8379 D8394
Contextual Info: 25E D • ^53^31 G 0 2 2 2T 3 â BY229 SERIES N AMER P H I L I P S / D I S C R E T E 7 = 0 3 -/7 FAST SOFT-RECOVERY RECTIFIER DIODES Glass-passivated double-diffused rectifier diodes in plastic envelopes, featuring fast reverse recovery times and non-snap-off characteristics. They are intended fo r use in chopper applications as well as in

SL550

Abstract: SL5500 SL5501 SOT-90B 340 opto isolator SL5511
Contextual Info: SL5500 SL5501 SL5511 OPTOCOUPLERS Optically coupled isolators consisting o f an infrared em itting GaAs diode and a silicon npn photo­ transistor w ith accessible base. Plastic envelopes. Suitable fo r T T L integrated circuits. Features • • • High o u tpu t/in pu t DC current transfer ratio