BDS61 Search Results

BDS61A

Abstract: smd npn darlington smd JS 60n60b MC555 BDS61 BDS61B BDS61C IEC134 7SOT223
Contextual Info: PHILIPS INTERNATIONAL Philips C om ponents Data sheet status Product specification date of issue April 1991 SbE D • 711Qfi2b 004312b 3Û1 ■ PHIN T- 3 ? -2 BDS61/61 A/61 B/61C NPN Silicon Darlington power transistors DESCRIPTION PINNING - SOT223 PIN 1 2

Contextual Info: Philips Com ponents D a ta sh e e t s ta tu s Product specification d a te o f is s u e Apr# 1991 B D S 61/61A / 61B / 61C NPN silicon Darlington power transistors DESCRIPTION PINNING - SOT223 NPN silicon pow er transistors in a m onolithic Darlington circu it in a

W1P 59 transistor

Abstract: W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn
Contextual Info: Philips S em iconductors S urface m oun ted sem ico n d u cto rs C on ten ts PART A page SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors

BDS61A

Abstract: smd npn darlington BDS61 BDS61B Darlington NPN Silicon Diode BDS61C smd diode LC 61 SMD 547 DIODE
Contextual Info: Philip» Comportants Datasheet status Product specification data of issue Apr* 1991 BDS 6 1 /6 1 A /6 1 B /6 1 C NPN Silicon Darlington power transistors DESCRIPTIO N PINNING - SOT223 DESCRIPTIO N base collector emitter collector PIN 1 2 3 4 NPN Silicon power transistors in a

D 1991 AR

Abstract: BDS60 BDS60A BDS60B BDS60C
Contextual Info: SbE ]> • PHILIPS INTERNATIONAL Data sheet status Product specification date of issue April 1991 711Dfl2ti ODMBllfi EGS M P H I N T-33-3/ BDS60/60A/60B/60C PNP silicon Darlington power transistors PINNING - SOT223 DESCRIPTION DESCRIPTION base collector emitter

BGY41

Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Contextual Info: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.

BDS60

Abstract: S80 SMD BDS60A BDS60B BDS60C UBB018 smd npn darlington FAG 29 diode
Contextual Info: Philips Components Datasheet status Product specification date of Issue April 1M1 BDS60/60A/60B/60C PNP Silicon Darlington power transistors PINNING - SOT223 DESCRIPTION DESCRIPTION base collector emitter collector PIN 1 2 3 4 PNP Silicon power transistors in a

Contextual Info: Philips Com ponents D a ta s h e e t s ta tu e P ro d u ct s p e cifica tio n d a te o f Issu e April 18B1 BDS60/60A/60B/60C PN P silicon Darlington power transistors PINNING - SOT223 DESCRIPTION PIN 1 2 3 4 PN P silicon power transistors in a monolithic Darlington circuit in a

BFG55A

Abstract: philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60
Contextual Info: Philips Semiconductors Surface mounted semiconductors Contents page PART A SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors