001473B Search Results

Contextual Info: S G S-THOHSON 07C D I 7=12^37 0014731 b I k u a /im ia INTEGRATED CIRCUIT K i HCC/HCF 4034B Ly >IC 08 7Vt 0 Y - f t o M r '. 8-STAGE STATIC BIDIRECTIONAL PARALLEL/SERIAL INPUT/OUTPUT BUS REGISTER • • • • • • • • • • • • BIDIRECTIONAL PARALLEL DATA INPUT

Contextual Info: 2SB1386 Transistor, PNP Features Dimensions Units : mm • available in MPT3 (MPT,SOT-89 SC-62) package • package marking: 2SB1386; BH^, where ★ is hFE code • low collector saturation voltage, typically VCE(sat) = -0.35 V for lc/lB = ~4 A/—0.1 A

Contextual Info: PRELIMINARY CYPRESS 128Kx 8 Static RAM Features Functional D escription • High speed — t/\A = 12 ns • CMOS for optimum speed/power • Low active power — 1020 mW • Low standby power — 250 mW • 2.0V data retention optional — 100 jiW • Automatic power-down when

BUZ347

Abstract: "MC 140" transistor BUZ34 DOIM733 JHUM735
Contextual Info: N AMER PHILIPS/DISCRETE ObE D PowerMOS transistor • bbS3T31 0014731 T ■ BJJZ347 May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

CA3069

Abstract: CA3069E ca3089e Waller 4SN3FIC CA-3089E CA3089 equivalent CA-3069
Contextual Info: regulatorsmaintain a nearly constant current drain over the voltage supply range of +8.5 t o +16 volts. RC A -C A 3089E is a monolithic integrated circuit that provides ail the functions of a comprehensive FM -IF system. Fig. 1 is a block diagram showing the C A3089E fea­

Contextual Info: DS1644/D S 1644LPM SEMICONDUCTOR DALLAS DS1644/DS 1644 LPM Nonvolatile Timekeeping RAM FEATURES PIN ASSIGNMENT A14 • Upward compatible with the DS1643 Timekeeping RAM A12 A7 • Integrated NV SRAM, real time clock, crystal, powerfail control circuit and lithium energy source

Contextual Info: M PIC16C7X ic r o c h ip 8-Bit CMOS Microcontrollers with A/D Converter Devices included in this data sheet: • Low-power, high-speed CMOS EPROM technology PIC16C70 • Fully static design PIC16C71 • Wide operating voltage range: 3.0V to 6.0V PIC16C71A

Contextual Info: N AMER PHILIPS/DISCRETE ObE D PowerMOS transistor • bb53^31 0014731 T BUZ347 May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,