SCB-1000S
Abstract: ICS951461 216MEP6CLA14FG sadp-90fh b ad-9019s WD1200BEVS-22UST0 sot23 w26 samsung t190 BA31-00045A BA59-02088A LTN121W
Contextual Info: - 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 - This Document can not be used without Samsung's authorization - 5. Exploded View & Partlist I0013 SYSTEM K1007 K0007 K1001 K4003 K0001 I0003 K3001 K4001 K1002
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i0013k1007k1001k4003+16i0003k0001k3001k0007k4001k1002scb-1000sics951461216mep6cla14fgsadp-90fh b ad-9019swd1200bevs-22ust0sot23 w26samsung t190ba31-00045aba59-02088altn121w
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K4096
Abstract: 1404a ITT 6570 MM2102 MM2112 intel 2101 MK4102 MK4007 MK1007 KS 2102
Contextual Info: S ig n e tic s M em o rie s-M O S RAMs IN T E L 2101 2111 2112 2 1 0 2 /2 1 0 2 A 1103 2107B 2104 2115 2125 2 11 4 2 30 8 2316E 2 70 4 2708 1402A 1403A 1404A 1405A M O STEK M K4007 M K4102 M K4096 M K4027 M K30000 M K 34000 M K3708 M K1007 M OTOROLA 2 102/A
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2102/2102a2107b2316emk4007+12mk4102k4096mk4027mk3708k10071404aitt 6570mm2102mm2112intel 2101mk1007ks 2102
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SCB-1000S
Abstract: NH82801HBM LE88CLPM BA41-00725A DAC-09N016 BA59-02088A NH82801HB scb1000s BA75-01884A SSM-8515S
Contextual Info: - 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 - This Document can not be used without Samsung's authorization - 5. Exploded View & Partlist I0013 SYSTEM K1007 K0007 K1001 K4003 K0001 I0003 K3001 K4001 K1002
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i0013k1007k1001k4003+16i0003k0001k3001k0007k4001k1002scb-1000snh82801hbmle88clpmba41-00725adac-09n016ba59-02088anh82801hbscb1000sba75-01884assm-8515s
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74s288
Abstract: SIGNETICS 74S188 74S188 74S287 74S474 mmi 6331 74S387 signetics 82s23 H6555 MMI 6349
Contextual Info: S ig n e tic s Memories BIPOLAR M EMORY CROSS R E F E R E N C E AMD' 2700/27 LSOO 2701/27LSÛ 1 27S08/27LS08 27S09/27LS09 27S10 27S11 3101 310 1 A/27S02 93415 93415A 93425 93425A F A IR C H IL D 10149 10144 1 0410 10415 93403 93406 93411 93411A 93415 93415A
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82s162701/27ls0182s1727s08/27ls0+1682s2327s09/27ls0982s12327s1082s12627s1174s288signetics 74s18874s18874s28774s474mmi 633174s387signetics 82s23h6555mmi 6349
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15S2
Abstract: K1007
Contextual Info: MICROWAVE MIXER DIODE I48CAY/A Dev. No. DEVELOPMENT SAMPLE DATA Schottky b a rrie r low noise m ixer diode mounted in a L .I.D . type envelope prim arily intended for hybrid integrated circuit applications at X band. QUICK REFERENCE DATA Typical noise figure at X band
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i48cay/a148cay/aisk1007375ghz+345mhz148cay/a15s2
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TFK 404
Abstract: T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09
Contextual Info: S IL IC O N T R A N S IS T O R S PN P Fast Switches N PN Fast: Switches D e v ic e B S X 27 T IS 4 4 T IS 45 T IS 46 T IS 47 T IS 48 T IS 49 Page 96 166 168 170 172 172 174 D e v ice Page T I S 51 T IS 52 T IS 55 2N 706A 2N 708 2N 753 2N 914 178 180 185 317
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20nttc10n12tfk 404t1s58+8bci83lgermanium diode oa 182tfk diodetransistors 2n 945v744akai amplifiertis62bci09
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1N23 diode
Abstract: 1N23 K1007 1N23 Diode Holder 1n23 jan noise diode
Contextual Info: MICROWAVE MIXER DIODE I48CAY/B Dev. No. DEVELOPMENT SAMPLE DATA Schottky b a rrie r low noise m ixer diode for use at X band. The 148CAY/B is interchangeable with the 1N23 s e r ie s . QUICK REFERENCE DATA Typical noise figure at X band 6.5 Frequency range
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i48cay/b148cay/b375ghz45mhz+7k1007jan-106holder1n23 diode1n231n23 diode holder1n23 jannoise diode
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AAY50
Abstract: AAY50R K1007 Germanium diode Mullard
Contextual Info: M ICROW AVE M IXER DIODES AAY50 AAY50R TENTATIVE DATA Coaxial germanium point-contact diodes for u se in pre-tuned X-band low noise m ixer c irc u its. The AAY50 and AAY50R a re intended as low noise re tro fits at X-band frequencies for coaxial m ixer diodes, types SIM2/5,
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aay50aay50rso-26247in+3aay50-pagek1007germanium diode mullard
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kt420
Abstract: ac176 CV7002 bc109 Transistor Equivalent list BSY95A diffused alloy BC146 BCY70 asy26
Contextual Info: Introduction This summary contains abridged information on the range of NKT semiconductor products, and the five main product groups are listed below. a HYBRID MICROCIRCUITS b) SILICON TRANSISTORS c) DIODES AND ANCILLIARY DEVICES d) GERMANIUM TRANSISTORS
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kt420ac176cv7002bc109 transistor equivalent list+5bsy95adiffused alloybc146bcy70asy26
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SCB-1000S
Abstract: NH82801HBM AD-9019S le88clpm BA92-04575A LTN154P4-L02-G venice 6.5 NH82801HB LTN154P4-L02 samsung ltn154
Contextual Info: - This Document can not be used without Samsung's authorization - 5. Exploded view and Part List SYSTEM ASSY LCD T0010 I0006 T0001 M0001 T0005 G0003 I0001 G0008 M3001 I0002 D0001 I0009 M3004 B0013 M4001 W3007 B0205 B0008 B2000 B0001 G0011 B0150 I0005 B0003
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i0006t0010t0001m0001+16t0005g0003g0008i0001i0002d0001scb-1000snh82801hbmad-9019sle88clpmba92-04575altn154p4-l02-gvenice 6.5nh82801hbltn154p4-l02samsung ltn154
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B0150
Abstract: t9802 M3005 b0501 K0001 K4002 K2003 B2004 T2000 D1002
Contextual Info: - 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 - This Document can not be used without Samsung's authorization - 5. Exploded View SYSTEM ASSY LCD I0006 M3004 T0001 B2004 M3005 M0001 M2001 M4001 M4000 I0002 I0009
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B0701
Abstract: K4002 I0002 D1006
Contextual Info: - 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 - This Document can not be used without Samsung's authorization - 5. Exploded View SYSTEM ASSY LCD I0006 T0001 W3015 B0013 M0001 M3000 I0001 W3006 D0005 I0009 D1006
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1N78
Abstract: AAY52 AAY52R JAN201 K1007
Contextual Info: M IC R O W A V E MIXER DIODES AAY52 AAY52R The AAY52 and AAY52R form a re v e r s e p a ir of m ix e r diodes fo r use in balanced m ix e r c irc u its at J-b an d Ku b a n d . The diodes give a good im pedance m atch o ver the whole band. The AAY52 and AAY52R a re packaged
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K1007
Contextual Info: Integrated Device Technology, Inc. 6024 Silver Creek Valley Road, San Jose, CA 95138 Phone #: 408 284-8200 PRODUCT DISCONTINUANCE NOTICE (PDN) PDN #: Issue Date: Contact: Title: Phone #: Fax #: E-mail: K-10-07 22-Mar-2010 Last Buy Deadline for Submission of Order:
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k1006
Abstract: k1008 K4003 K4002 W3006 B0206 K0201 W3007 K1003
Contextual Info: - This Document can not be used without Samsung's authorization - 5. Exploded View SYSTEM ASSY LCD I0006 I0009 T0001 T3101 I0002 M0001 T3000 K1008 M4000 I0001 M0003 M0006 W3006 M3004 M4001 G0002 M3001 B0013 B0206 D0001 W3007 B0001 G0011 G0003 R0006 I0005 B0005
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samsung r522
Abstract: r522 D1006
Contextual Info: - 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 - This Document can not be used without Samsung's authorization - 5. Exploded View ASSY LCD SYSTEM I0006 T0001 W3015 B0013 M0001 M3000 I0001 W3006 D0005 I0009 D1006
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AAY39
Abstract: 15J2 15S2 AAY39A K1007
Contextual Info: MICROW AVE MIXER DIODES AAY39 AAY39A Subm iniature germ anium point-contact m ixer diodes p rim a rily intended for low noise m ixer applications a tX -b a n d . QUICK REFERENCE DATA 1.0 to 18 Frequency range Typ. noise figure at X-band GHz AAY39 6.0 dB AAY39A
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germanium rectifier
Abstract: AAY34 K1007
Contextual Info: MICROWAVE MIXER DIODE AAY34 Subm iniature germ anium point-contact m ix e r diode for u se at Q band. QUICK REFERENCE DATA Frequency range 26 to 40 T yp. noise figure GHz 8 .5 dB OUTLINE AND DIMENSIONS X M illim etres B9924 Min. Max. A 6 .6 5 7 .1 6 B 1 .1 7
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K4096
Abstract: Motorola 6830 M 2530 motorola KS 2102 intel 2101 INTEL 1404A Signetics 2518 AM9216 9316A 2627 "cross reference"
Contextual Info: S ig n e tic s Memories MOS RAMs AM D A M 2 1 01/9101 A M 2 1 11/9111 A M 2 1 12/9112 A M 2 1 0 2 /9 1 0 2 AM 9060 AM 9216 AM 9208 A M 1402 A M 1403 A M 1404 A M 1405 A M 1506 A M 1507 A M 2806 A M 280 7 AM 2808 AM 2809 AM 2833 MOS M E M O R Y CROSS R E FER EN C E
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am2101/9101am2111/9111am2112/9112am2102/9102+15am9060am9216am9208am1402am2807am2808k4096motorola 6830m 2530 motorolaks 2102intel 2101intel 1404asignetics 25189316a2627 "cross reference
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AAY39
Abstract: K1007
Contextual Info: M IC R O W A V E M IX E R D IO D E I48CAY/C Dev. No. DEVELOPMENT SAMPLE DATA Subm iniature Schottky b a r r ie r diode p rim a rily intended fo r low noise m ixer applications at X band. The 148CAY/C is interchangeable with the AAY39. QUICK REFERENCE DATA
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SCB-0320N
Abstract: KSB0705HA-9C1S M470T5663RZ3-CF7 NP-R519-XA06PL BA44-00248A BA75-02034A 9C1S samsung ba92 BA96-04215A BA59-02570A
Contextual Info: - This Document can not be used without Samsung's authorization - Part List : NP-R519-XA06PL Ver. Location 0001 A0010 Part Number 3903-000444 CBF-POWER CORD;DT,EU/KR,CP3,IEC320 C5,25 Part Name & Specification Q'ty SA/SNA 1 SA NP-R519-XA06PL Parent Part 0001
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GFB7400D
Abstract: FEY101B TCA290A Rifa pmr 2026 EF184 ORP52 Mullard Mullard quick reference guide GZF1200 ITT A2610 YD 6409
Contextual Info: AN INTRODUCTION TO: Cartwright ELECTRONIC COMPONENTS 517 LAWMOOR STREET DIXONS BLAZES INDUSTRIAL ESTATE GLASGOW G5 041-429 7771 Cartwright Electronic Components started trading in April, 1971 as the electronics division of John T. Cartwright & Sons ERD North Ltd . From very modest
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K4W1G1646E-HC12
Abstract: BA9-20 BA96-04097A BA39-00813a ltn156 SCB-1700N LTN156A CLAA156WA11A 88E8057 Forcecon
Contextual Info: - This Document can not be used without Samsung's authorization - Part List : NP-R522-XS01UA Ver. Location 0001 A0010 Part Number 3903-000444 CBF-POWER CORD;DT,EU/KR,CP3,IEC320 C5,25 Part Name & Specification Q'ty SA/SNA 1 SA NP-R522-XS01UA Parent Part 0001
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b0203
Abstract: B0009 B0003 B02-03 T0302 K9001 k4002 I0005 D4006 K9000
Contextual Info: - 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 - This Document can not be used without Samsung's authorization - 5. Exploded View SYSTEM B0009 I0009 B0010 B0204 B0009 B0010 B1110 B0001 B0009 B0003 R0006 I0005
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