D1006 Search Results

Contextual Info: bOE D SENELAB • 0133107 ODDGTED 27b ■ SMLB 'T-'S V 'ZS PLC SEMELAB D1006UK NEW PRODUCT RF SILICON FET GOLD METALLISED MULTI-PURPOSE SILICON DMOSRFFET 120W -28V-175M H z SINGLE ENDED MECHANICAL DATA D im ensions FEATURES • SIMPLIFIED AMPLIFIER DESIGN

Contextual Info: nil TetraFET Vrrr = mi D1006UK SEM E LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 1 2 0 W -2 8 V -1 7 5 M H z SINGLE ENDED FEATURES u • SIMPLIFIED AMPLIFIER DESIGN Q N K w O P • SUITABLE FOR BROAD BAND APPLICATIONS

B0701

Abstract: K4002 I0002 D1006
Contextual Info: - 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 - This Document can not be used without Samsung's authorization - 5. Exploded View SYSTEM ASSY LCD I0006 T0001 W3015 B0013 M0001 M3000 I0001 W3006 D0005 I0009 D1006

1455

Abstract: D1006UK 20swg
Contextual Info: TetraFET D1006UK METAL GATE RF SILICON FET MECHANICAL DATA B C A 1 E 2 3 F 6 5 G 4 J GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 120W – 28V – 175MHz SINGLE ENDED D H M FEATURES • SIMPLIFIED AMPLIFIER DESIGN Q K N O P • SUITABLE FOR BROAD BAND APPLICATIONS

D1006UK

Abstract: d1006 20swg FT-82 VG10
Contextual Info: TetraFET D1006UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA B C A 1 E 2 3 G F 6 5 4 J GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 120W – 28V – 175MHz SINGLE ENDED D H K FEATURES • SIMPLIFIED AMPLIFIER DESIGN Q M N O P • SUITABLE FOR BROAD BAND APPLICATIONS

samsung r522

Abstract: r522 D1006
Contextual Info: - 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 - This Document can not be used without Samsung's authorization - 5. Exploded View ASSY LCD SYSTEM I0006 T0001 W3015 B0013 M0001 M3000 I0001 W3006 D0005 I0009 D1006

20swg

Abstract: VG10
Contextual Info: TetraFET D1006UK METAL GATE RF SILICON FET MECHANICAL DATA B C A 1 E 2 3 G F 6 5 4 J GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 120W – 28V – 175MHz SINGLE ENDED D H K FEATURES • SIMPLIFIED AMPLIFIER DESIGN Q M N O P • SUITABLE FOR BROAD BAND APPLICATIONS

Contextual Info: TetraFET D1006UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA B C A 1 E 2 3 G F 6 5 4 J GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 120W – 28V – 175MHz SINGLE ENDED D H K FEATURES • SIMPLIFIED AMPLIFIER DESIGN Q M N O P • SUITABLE FOR BROAD BAND APPLICATIONS

Contextual Info: Illl TetraFET eFTI SEME INI D1006UK LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 120W -28V-175M Hz SINGLE ENDED 4 1 i< 2 3 ^ -| F G * r FEATURES • SIMPLIFIED AMPLIFIER DESIGN á"" A Q N P DV PIN 1 SOURCE

D1006UK

Contextual Info: TetraFET D1006UK METAL GATE RF SILICON FET MECHANICAL DATA B C A 1 E 2 3 F 6 5 G 4 J GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 120W – 28V – 175MHz SINGLE ENDED D H M FEATURES • SIMPLIFIED AMPLIFIER DESIGN Q K N O P • SUITABLE FOR BROAD BAND APPLICATIONS

1455

Abstract: 20swg D1006UK
Contextual Info: TetraFET D1006UK METAL GATE RF SILICON FET MECHANICAL DATA B C A 1 E 2 3 G F 6 5 4 J GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 120W – 28V – 175MHz SINGLE ENDED D H K FEATURES • SIMPLIFIED AMPLIFIER DESIGN Q M N O P • SUITABLE FOR BROAD BAND APPLICATIONS

hart protocol

Contextual Info: Quad-Channel, 12-Bit, Serial Input, 4 mA to 20 mA Output DAC with Dynamic Power Control and HART Connectivity AD5737 Data Sheet FEATURES Each channel has a corresponding CHART pin so that HART signals can be coupled onto the current output of the AD5737. 12-bit resolution and monotonicity

XAL4040-103

Abstract: AD5737 AD5755-1 ADP2302 ADP2303 ADR02 ADR445 100670-2
Contextual Info: Quad-Channel, 12-Bit, Serial Input, 4 mA to 20 mA Output DAC with Dynamic Power Control and HART Connectivity AD5737 7.4 V to 29.5 V using a dc-to-dc boost converter optimized for minimum on-chip power dissipation. FEATURES 12-bit resolution and monotonicity

315mhz module receiver

Abstract: ASK transmitter 433mhz D1006A 433MHz IC RF Transmitter 315MHz rf traNsmitter receiver 315mhz HT66F03 433mhz transmitter 433MHZ PCB antenna antenna 433MHZ PCB
Contextual Info: HT66F03T3/68F03T3 MCU with 315MHz/433MHz ASK Transmitter HT66F03T3/68F03T3 MCU with 315MHz/433MHz ASK Transmitter D/N：HA0220E General Description The HT66F03T3/68F03T3 is a Flash type MCU with an RF ASK transmitter function. Data generated from the MCU will be transmitted at a carrier frequency of 315M/433MHz to a

tps51620

Abstract: alc889 bq24721 tps51125 ITE8512E C5134 TI_BQ24721C_QFN_32P INVENTEC JMB385 fds8884
Contextual Info: www.kythuatvitinh.com KiliManjaro CS Build A02 2008.02.04 Digitally signed by dd DN: cn=dd, o=dd, ou=dd, email=dddd@yahoo. com, c=US Date: 2009.11.29 17:18:29 +07'00' EE DATE POWER DATE DRAWER DESIGN CHECK RESPONSIBLE DATE CHANGE NO. REV 3 SIZE = FILE NAME : XXXX-XXXXXX-XX

tps51125

Abstract: alc889 c2233 fds8884 bq24721 BQ24721C Inventec IT8512E tps51125 kbc AR8121
Contextual Info: TETON2 DDRIII-Pre MV BUILD 2008.06.18 EE DATE DATE POWER DRAWER DESIGN CHECK RESPONSIBLE DATE CHANGE NO. REV 3 SIZE = FILE NAME : XXXX-XXXXXX-XX XXXXXXXXXXXX P/N INVENTEC TITLE VER : TETON2 SIZE CODE A3 CS SHEET DOC. NUMBER REV 1310A22077-0-MTRA02 1 OF 53

Contextual Info: GENERAL OPERATING CHARACTERISTICS PRESSURE RANGE OVERPRESSURE TEMPERATURE RANGES SUPPLY VOLTAGE SUPPLY CURRENT SHORT CIRCUIT LIMIT OUTPUT RIPPLE GROUND REFERENCE 12.6 -5 TO + 5 IN. H? 0 5 PSI STORAGE -55 TO +125°C OPERATE - 40 TO +85°C COMPENSATED +5 TO +45°C

C3D10060

Abstract: C3D10060G CSD10060 TO-263-2
Contextual Info: D10060G–Silicon Carbide Schottky Diode VRRM = 600 V Z-Rec Rectifier IF AVG = 10 A Qc = 25 nC Features • • • • • • • Package 600-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation

BFM12

Abstract: BFM33 BFM34 BFM21 BFM-12 BFM32 D1022UK D1053UK D1015UK
Contextual Info: R.F. Division Semelab Device Type Working Power Working b v dss *D Freq. W atts Voltage Volts Am ps Min. Gain 13db BFM12 4 28 70 5 200MHz BFM21 0.75 0.75 4 28 12 65 0,2 0.2 2.5GHz 2.5GHz 1 2GHz 11db 13db 1.6 2 1GHz 13db 1GHz 13db 1GHz 13db 0.8GHz 13db 16db

opti 82c392

Abstract: teac fd 235hf opti 486 chipset
Contextual Info: OPTÌ-486SXWB PC/AT Chipset 82C493/82C392/82C206 Preliminary 82C493/82C392 DATA BOOK Version 1.1 August 16, 1991 / OPTi, Inc., 2525 Walsh A venue, Santa Clara, CA 95051 (408) 9 8 0 -8 1 7 8 FAX: 4 0 8 -9 8 0 -8 8 6 0 Disclaimer This specification is subject to change without notice. OPTi, Incorporated assumes

Contextual Info: D10060–Silicon Carbide Schottky Diode VRRM = 600V Zero Recovery Rectifier IF = 10A Qc = 28nC Features • • • • • • • Package 600 Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High Frequency Operation Temperature Independent Switching Behavior

d100

Contextual Info: Voltage Sensitive Relays WILMAR Protective Relays – D100X Series, Close Differential Function: • ANSI/IEEE C37.90-1978 • UL file No. E58048 • CSA file No. LR61158 0.5 Close Differential Relays are voltage sensitive. The pick-up and drop-out voltage settings are independently adjustable, which allows precise setting of the

C3D10065I

Contextual Info: D10065I Silicon Carbide Schottky Diode Z-Rec Rectifier IF; 10 A TC<125˚C= = 25 nC Package 650-Volt Schottky Rectifier Ceramic Package provides 2.5kV isolation Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Behavior

Futaba display

Abstract: HT7L4091 HT1632C HT16K33 ht8972 HT12D ht82v46 HT46F47 Futaba VFD ht12e dip 18
Contextual Info: Selection Guide Holtek Company Introduction Introduction Continual growth and a persistent stream of new product releases onto the global market has been the hallmark of Holtek Semiconductor since the establishment of the company in 1983 to the present date. Although remaining focused in the area of