1N78 Search Results

1N23 diode

Abstract: 1N53AR 1N26A diode Silicon Point Contact Mixer Diodes 1N415 1N832A N178 kaba 1N23WG 1N26BR
Contextual Info: EBAlpha Silicon Point Contact Mixer Diodes 1N2XX, 1N3205,1N25XX, 1N78X, DMA649X-XXX Series Features • High Burnout Resistance ■ Low Noise Figure, even in the Starved LO Mode ■ Hermetically Sealed Description Alpha’s point contact mixer diodes are designed for

D65084

Abstract: 1N78CMR 1N78C 1N78CM 1N78CR 1N78F 1N78FM 1N78FMR 1N78FR military marking symbols
Contextual Info: MIL-S-19500/150C 11 February .12751- SUPERSEDING MIL-S-19500/130B r o t « *fn*7 A u u iie i9 /V | c u tu MIL-S-19500/129 SigC 20 July 1960 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, MIXER TYPES 1N78C, 1.N78CR- 1N78CM. 1N78CMR, 1N78F, 1N78FR, 1N78FM, ANü' 1N78FMR

DSAIH0002541

Contextual Info: BKC INTERNATIONAL 0 3 E D | 1 1 7 ^ 0 3 □□qD232 b 1 ~~ > •- _ Type No. 1N781_ T'03~°7 GOLD BONDED GERMANIUM DIODE 19 6 Lake Street PO Box 1436 Lawrence, MA 01841 Telephone 617 681-0392 TeleFax (617) 681-9135 Telex 928377 BKC International

Contextual Info: 1N781A Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 1N781A Availability Online Store

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

1N78

Abstract: tangential AEY29 Germanium Power Diodes Microwave detector diodes AEY29R JAN201 K1007
Contextual Info: M IC R O W A V E D ET EC TO R D IO D ES A EY 2 9 A EY 2 9 R G e rm an iu m bonded b a c k w a rd d io d e s p r i m a r il y in te n d e d f o r low le v e l d e te c ­ t o r a p p lic a tio n s a tJ - b a n d K u b a n d . T h e AEY29 an d A EY 29R a r e p ackaged

JAN1N23WG

Abstract: 1N21* Diode Detector Holder JAN1N21WE 1N23C 1N23C diode 1N53C JAN1N21WG MA490E MA492C 1N831A
Contextual Info: N/A-COMSEMICONDtBRLNGTON 11 J> • Sb4E2mGGÜ13SÔT■MIC J Point Contact Mixer and Detector Diodes Features ■ PACKAGED CARTRIDGE POINT CONTACT MIXER DIODES ■ COAXIAL POINT CONTACT MIXER DIODES ■ AXIAL LEAD GLASS PACKAGED POINT CONTACT MIXER DIODES ■ AXIAL LEAD GLASS PACKAGED

1N415C

Abstract: "Point Contact Diodes" 1N23G 1N530 JAN1N23WG MA41514 MA494
Contextual Info: Point Contact Diodes MODEL NUMBER PAGE 1N 21D .7-3 1 N 2 1 E . 7-3 1N 21G . 7-3

1Nu5

Abstract: IN418 1Ns4 IN270 1N42 UN309 IN73 1N34A 1N46 1N128
Contextual Info: l e m l t r o SEMICONDUCTORS7 " n SemitronicsCorp. INTEX/ SEMITRONICS 'Tz'O I-* 0 7 CORP germanium diodes Max. P tik i H l f ll MM. Farward V o lt« « vo lti Farward Currant <mA) Ravarsa Currant Pawar Ravarsa Disci* Voltaga patian (»alt«) (mW) Ti m V o tta p

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

crystal diode

Abstract: 4126 transformer design details 1N53B Transformer Inspection Testing 1N53B DIODE military part marking symbols jan 1N53 1N53BM 1N53BMR 1N53BR
Contextual Info: MIL-S-19500/186B i l FêbrUâry i$te5 SUPERSEDING MIL-S-19500/186A EL 18 October 1963 M i r .r r A P V QDTPr'TTT'Tr’ ÀTTn'M TYPES JAN-1N53B, JAN-1N53BR, JAN-1N53BM, AND JAN-1N53BMR This specification is mandatory for use by all Departments ailu AgenCicS Qi the D€pa.rtifi6nt Of PGi6fl5€.

1N23 diode

Abstract: 1N78 diode 1N23WGMR 1N26A diode 1n21we 1N26B ka2to 1N415 DMA4148-042 1n23 jan
Contextual Info: Silicon Point Contact Mixer Diodes Features • ■ ■ High Burnout Resistance Low Noise Figure, even in the Starved L.O. Mode Hermetically Sealed * \ / \ Description These specifications allow the noise figure of the re­ ceiver to deteriorate no greater than 0.1 dB due to local

1N44H

Abstract: 1a5ah 1178H 1N60H 1171H 1A86H 0m02 1b7ah 19C1H 1N14H
Contextual Info: SONET/SDH Payload Extractor/Aligner SPECTRA-4x155 Production PM5316 SPECTRA 4x155 SONET/SDH Payload Extractor/Aligner 4 x 155 Mbit/s Datasheet Proprietary and Confidential Production Issue 4: March 2001 Proprietary and Confidential to PMC-Sierra, Inc. and for its customers’ internal use

IN23C

Abstract: IN23E in23we DO-37 IN416D 1N26 DO-23 1N25 diode 1N26A diode IN23WGMR
Contextual Info: 0258354 ADVANCED ADVANCED S EMI CONDUC TOR SEMICONDUCTOR ! 82D 0 0 0 6 3 fl2 D Dff|oa5ü3S4 o n - o~r 0□0 □Ob3 4 SILICONPOINTCOMCTMIXER OIOÛES ASI Point Contact Mixer Diodes are designed for applications from UHF through 26 GHz. They feature high burnout resistance, low

CS103

Abstract: 1n53d diode 1N78A 1N78D 1N53B ka-band mixer 1N78B "Point Contact Diodes" CS102 Silicon Point Contact Mixer Diodes
Contextual Info: Point Contact Diodes Point Contact Diodes: 1N Series Ka Band Point Contact Mixer Diodes Description This MicroMetrics 1N series of Point Contact Mixer diodes is designed for applications through KA-Band. Each device in this series is in a coaxial package specially designed for low

1N21B diode

Abstract: 1N21* Diode Detector Holder 1N28 diode 1N21B 1N23CR diode 1N358A 1N358AMR 1N358AR 1N358AM 1N53 ON
Contextual Info: M IL -S-19500/339 17 D^5«sb«r 1965 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, VIDEO DETECTOR TYPES 1N358A, 1N358AE, 1N358AM, AND 1NS58AMR This sp ecification is mandatory for u se by all Departm ents and A gen cies of the Department of D efen se.

Tr431

Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200

1N78

Abstract: AAY51 AAY51R JAN201 K1007
Contextual Info: M IC R O W A V E M IX E R DIO DES AAY5I AAY5IR The AAY51 and AAY51R fo rm a r e v e r s e p a ir of m ix e r diodes fo r use in balanced m ix e r c irc u its at J-b an d Kuband . The diodes give a good im ­ pedance m atch o ver the whole band. The AAY51 and AAY51R a r e packaged

1N78

Abstract: AAY52 AAY52R JAN201 K1007
Contextual Info: M IC R O W A V E MIXER DIODES AAY52 AAY52R The AAY52 and AAY52R form a re v e r s e p a ir of m ix e r diodes fo r use in balanced m ix e r c irc u its at J-b an d Ku b a n d . The diodes give a good im ­ pedance m atch o ver the whole band. The AAY52 and AAY52R a re packaged

IN751

Abstract: 1n783 IN759 IN759 zener diode 1N798 1n782 1N786 1N787 1N764 in75
Contextual Info: 1 345^325 OOOOISI D FAGOR a 3459325 1N751. 1N759 FAGOR ELEC TR O N IC S ;ÙAW |e r ie ïDiodes 98D 00151 ^ Dimensions in nun. inches 01 DO-35 (Glass) Voltage 8.1 to 12 V. Power 0.4 W cai49) QS ( 2. 401) Standard Voltage Tolerance is i 10 1 A dd Suffix "A " for 5 % Tolerance.

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

hep 154 silicon diode

Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered