2316E Search Results

K4096

Abstract: 1404a ITT 6570 MM2102 MM2112 intel 2101 MK4102 MK4007 MK1007 KS 2102
Contextual Info: S ig n e tic s M em o rie s-M O S RAMs IN T E L 2101 2111 2112 2 1 0 2 /2 1 0 2 A 1103 2107B 2104 2115 2125 2 11 4 2 30 8 2316E 2 70 4 2708 1402A 1403A 1404A 1405A M O STEK M K4007 M K4102 M K4096 M K4027 M K30000 M K 34000 M K3708 M K1007 M OTOROLA 2 102/A

Z80A CPU

Abstract: Z80A-CTC z80a-PIO 2316E 4027 ram Z80A Z80A-CPU z80 pio Z80 RAM 1024x1 static ram
Contextual Info: MOS INTEGRATED CIRCUITS continued POWER TEMP. RANGE (°C) RAM 1024x1 bit static 2 5 - 0.25 2.2 2.2 33 - 0-70 D IP K, M M 2316E •ROM 2Kx8 bit 2 5 - 0.45 2.2 2.2 40 - 0-70 DIP R, U M 2704 PROM 512x8 bit 5 5 12 0.45 2.2 2.2 - - 0-70 D IP J M 2708 PROM 1Kx8 bit

MM52116

Abstract: 2316E 2716 PROM prom 2708
Contextual Info: MM52116 2316E National J ji Semiconductor MOS ROMs MM52116 (2316E) 16,384-Bit Read Only Memory General Description Features The M M 52116 is a static MOS 1 6,3 84 -b it read-only m em ory organized in an 2048-w ord-by*8-bit fo rm a t. I t is fabricated using N-channel enhancem ent and

am9218

Abstract: 2316a intel 2316a rom 2316a
Contextual Info: AMI S6831A/B Features General Description □ Single +5V Power Supply □ Directly TTL Compatible Inputs □ Three-State T T L Compatible Outputs □ Three Programmable Enables The AMI 6831 family of 16,384 bit mask program­ mable Read-Only-Memories offers fully static opera­

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

74s288

Abstract: SIGNETICS 74S188 74S188 74S287 74S474 mmi 6331 74S387 signetics 82s23 H6555 MMI 6349
Contextual Info: S ig n e tic s Memories BIPOLAR M EMORY CROSS R E F E R E N C E AMD' 2700/27 LSOO 2701/27LSÛ 1 27S08/27LS08 27S09/27LS09 27S10 27S11 3101 310 1 A/27S02 93415 93415A 93425 93425A F A IR C H IL D 10149 10144 1 0410 10415 93403 93406 93411 93411A 93415 93415A

mcm6830

Abstract: EXORCISER motorola M68MM01A 7642T MC68B54 transistor bf 175 motorola application note 6809 6844 MMS1117 EXORCISER motorola M68MM01A2
Contextual Info: The MS800MM0S Support Elem ents Other NMOS MPUs MC3870 ^ MICROCOMPUTER COMPONENTS CMOS MCUS/ICUS MC14S00B, MC141000/1206 Bipolar 4-Blt slice MPU Fam ilies M2900 TTL , M10800 (MECL) nm os Memories RAM, EPROM, ROM CMOS Memories RAM, ROM MEMORY PRODUCTS Bipoiar Memories

la 76805 volt on pin

Abstract: intel 8708 eprom M3002 Pulse M3001 eprom 8708 2316a rom UPP-103 interfacing 8275 crt controller with 8086 intel 1402a Pascall
Contextual Info: Intel Corporation 3065 Bowers Avenue • Santa Clara, CA 95051 Telephone: 408 987-8080 TWX: 910-338-0026- Telex: 34-6372 inter Component Data Catalog 1978 Numerical and Functional Indexes 1 General Information 2 Random Access Memory 3 Read Only Memory 4

SSF2316E

Abstract: DFN3×3-8L 2316E "battery protection"
Contextual Info: 2316E GENERAL FEATURES ● VDS = 20V,ID = 7A RDS ON < 35mΩ @ VGS=2.5V RDS(ON) < 30mΩ @ VGS=3.1V RDS(ON) < 24mΩ @ VGS=4V RDS(ON) < 23mΩ @ VGS=4.5V Schematic diagram ESD Rating：2000V HBM ● High Power and current handing capability ● Lead free product is acquired

NEC D2716

Abstract: D2716 PD8048 PD2716 nec d2716 eprom uPD2716-2 NPD2 PD42S18160 iPD2716 ud271
Contextual Info: NEC f*PD2716 v' J1PD2716-2 NEC Electronics U.S.A. Inc. Microcomputer Division 16,384 2K X 8 BIT UV ERASABLE PROM D ESC RIP T IO N The /j P D 2 71 6 is a 16,384 bit (2048 x 8 bit) Ultraviolet Erasable and Electrically Pro­ grammable Read-Only Mem ory (E P R O M ). It operates from a single +5 volt supply,

THERMISTORS nsp 037

Abstract: Thyristor TAG 9118 ICA 0726 0148 Transformer a1273 y k transistor AM97C11CN transistor SK A1104 PM7A2Q B8708 bzy79 yh 5032
Contextual Info: INDEX OF COMPONENTS A Section/Page No. A.C. Adaptor. Adaptor Kits BNC e tc . Adhesive Tapes. Adhesives, Various. Aerosols.

MOSTEK 36000

Abstract: 3861 mostek MK2408P MK2500P
Contextual Info: CONTENTS I. Functional/Numerical Index II. Shift Registers III. Read Only Memories 16K ROMs 32K ROMs 64K ROMs Programmable ROMs Random Access Memories 4K Dynamic RAMs 16K Dynamic RAMs 4K Static RAMs IV. V. Application Information VI. Packaging VII. Reliability Information

21112 kONTRON

Abstract: EA-8332 elektronik DDR Am8251 AM9511 AM8251DC AM2716DC am9511a MM1402 MM5055
Contextual Info: a a a a a a a a a a a a a a a a a a a ;< t f n a ;i i i aaaaaaaa aaaaaaaaaa^ an azi n a a a a a a a n a a a a a n a n a ¿ i ;i ¿ t a a ;i a a a a a a a a a a a a a a a a a a r t a r ir ir iii aaaaaaaaaaaaaaaaaa^ aanaa a a a a a a a a a a a a a a a a r i^ a a a a in

Mosfet

Abstract: SSF2316E
Contextual Info: 2316E 20V Dual N-Channel MOSFET GENERAL FEATURES ● VDS = 20V,ID = 7A RDS ON < 35mΩ @ VGS=2.5V RDS(ON) < 30mΩ @ VGS=3.1V RDS(ON) < 24mΩ @ VGS=4V RDS(ON) < 23mΩ @ VGS=4.5V Schematic Diagram ESD Rating：2000V HBM ● High Power and current handing capability

TCA965 equivalent

Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
Contextual Info: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated

K4096

Abstract: Motorola 6830 M 2530 motorola KS 2102 intel 2101 INTEL 1404A Signetics 2518 AM9216 9316A 2627 "cross reference"
Contextual Info: S ig n e tic s Memories MOS RAMs AM D A M 2 1 01/9101 A M 2 1 11/9111 A M 2 1 12/9112 A M 2 1 0 2 /9 1 0 2 AM 9060 AM 9216 AM 9208 A M 1402 A M 1403 A M 1404 A M 1405 A M 1506 A M 1507 A M 2806 A M 280 7 AM 2808 AM 2809 AM 2833 MOS M E M O R Y CROSS R E FER EN C E

Intel 2316E

Abstract: CPD1802 2316E MK34000 Z80A rom/Intel 2316E Z80A sti IM6316 IM6316IJG IM6316IPG
Contextual Info: IM 6 3 1 6 1 6 ,3 8 4 Bit 2 0 4 8 x 8 CMOS ROM DM Ü^DIL common system bus structures. On-chip address registers and tw o mask programmable chip-selects sim p lify system interfacing requirements. FEATURES • Low standby power 11 mW maximum • High speed: 550ns maximum

Intel 2316

Abstract: intel 2708 eprom 2716 eprom 2316a 2316a intel S6831 eprom 2716 8316 rOM rom 2716 2316a rom
Contextual Info: AM I S6831A/B Features G eneral Description □ Single + 5 V Pow er Supply □ D irectly TTL C om patible Inputs □ T hree-State TTL C om patible O utputs □ Three Program mable Enables The AMI 6 8 3 1 fam ily o f 1 6 ,3 8 4 bit m ask program ­ m able Read-O nly-M em ories o ffers fu lly static opera­

Contextual Info: 2316E GENERAL FEATURES ● VDS = 20V,ID = 7A RDS ON < 35mΩ @ VGS=2.5V RDS(ON) < 30mΩ @ VGS=3.1V RDS(ON) < 24mΩ @ VGS=4V RDS(ON) < 23mΩ @ VGS=4.5V Schematic diagram ESD Rating：2000V HBM ● High Power and current handing capability ● Lead free product is acquired

Intel mcs-40

Abstract: intel 1101 2116 ram 5101 RAM transistor equivalenti Bipolar PROM programming Creative IC CT 1975 intel 3601 1702a eprom MCS-40
Contextual Info: PRIC E 15 00 memory design handbook m in ia i O k p a r » lio n 1 0 7 7 INTRODUCTION The Intel Memory Design Handbook contains information on the use of Intel’s memory components and support circuits in system application. It is intended to aid the system designer to gain a thorough

pd2716

Abstract: MPD2716 2716D PD8048 mPD446 PD42S18160 iPD2716 UPD2316E ud271
Contextual Info: NEC NEC Electronics U.S.A. Inc. f*P D 2 7 1 6 v' J 1 P D 2 7 1 6 -2 Microcomputer Division 1 6 ,3 8 4 D E S C R IP T IO N 2 K X 8 B IT U V E R A S A B L E P R O M The ¿¿P D 2716 is a 16,384 bit (2048 x 8 bit) Ultravioiet Erasable and Electrically Pro­

AOOA

Abstract: 2316E MM52116
Contextual Info: Character Generators MM52116FDW, MM52116FDX Character Generators General Description Features The M M 52116FD W , M M 5 21 1 6 F D X are 128-character, N-channel, silicon-gate character generators designed pri­ marily fo rC R T display applications. The M M 5 21 1 6 F D W /

TFK 680 CNY 70

Abstract: 7447n BTP-128-400 ITT TCA 700 Y btp 128 550 74151n Katalog CEMI SFC2741DC 4BYP250-400 TFK 227
Contextual Info: NAUKOWO-PRODUKCYJNE CENTRUM PÒLPRZEWODNIKÓW CEMI ELEMENTY PÓtPRZEWODNIKOWE I UKtADY SCALONE USTA PREFERENCYJNA 1982/84 Warszawa 1982 WPROWADZENIE LISTA PREFEREMCYJNA zawiera wykaz podzespolów kowanych aktualnle, przewldzianych do produkcji w w ramach urnów specjallzacyjnych 1 kooperacyjnych.

MM2316E

Abstract: MM2716 MM52116FDW-D D24C MM52116FDW-N MM52116FDX-D MM52116FDX-N MM52116 can obd tac l2
Contextual Info: General Description Features The M M 52116FD W , M M 5 21 1 6 F D X are 128-character, N-channel, silicon-gate character generators designed p ri­ m a rily fo r CRT display applications. The M M 5 21 1 6 F D W / M M 5 21 1 6 F D X provide 5x7 and 7 x 9 row scan character