K9000 Search Results

OP535

Contextual Info: L7TfiSaO DDODbflB 1 57E D OPTEK TECHNOLOGY INC OPTEK Product Bulletin OP535 July 1989 Replaces January 1985 NPN Silicon Photodarlington Type OP535 • • • • Narrow receiving angle T-1 package style High current gain Small package size for space limited

Contextual Info: SHEET 1 OF 1 1.90 [.075 in] A 23.00 [.906 in] 7.10 [.280 in] SECTION A-A SCALE 2 : 1 A 54.70 [2.154 in] NOTES: 1. ALL DIMENSIONS IN MM [INCH] 2. GENERAL TOLERANCE: x.x=`0.4 x.xx=`0.25 3. MATERIAL: BRASS W/NICKLE PLATE 4. REVERSIBLE DOUBLE CUT C 16152 ADD ENGRAVING

P535C

Abstract: P535A
Contextual Info: 0OPTEK Product Bulletin OP535A June 1996 NPN Silicon Photodarlington Type OP535A, OP535B, OP535C Features • • • • Narrow receiving angle T-1 package style High current gain Small package size for space limited applications Description The O P535 consists of an NPN silicon

K9000

Abstract: OP165 OP535 OP535A OP535B OP535C
Contextual Info: ¡ 0 OPTEK Product Bulletin OP535A June 1996 NPN Silicon Photodarlington Type OP535A, OP535B, OP535C • Features • Narrow receiving angle • T-1 package style • High current gain • Small package size for space limited applications Collector-Emitter V o lta g e . 15.0 V

Contextual Info: SHEET 1 OF 1 ISOMETRIC 32.80 [1.291 in] .20 [.008 in] 2.00 [.079 in] 1.80 [.071 in] .85 [.033 in] 17.00 [.669 in] n6.30 n [.248 in] n4.80 [.189 in] STAMPED 1506 NOTE: 1. STEEL TUBULAR KEY, NICKEL PLATED A 18135 REV PCR NO RELEASE FOR PRODUCTION DESCRIPTION

H0A0872-n55

Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
Contextual Info: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1

ee01-3

Abstract: k9000 oakum OP535
Contextual Info: OPTEK TECHNOLOGY INC 2?E D • bT'löSäO 00001=03 1 ■ 0 OPTEK Product Bulletin OP535 July 1989 Replaces January 1985 NPN Silicon Photodarlington "Pm-lÆ Type OP535 DIM ENSIO NS ARE IN INCHES (MILLIMETERS!. a Absolute Maximum Ratings (T a = 2 5 °C unless otherw ise noted

KT853

Abstract: OPB915S10 OH90U OPI1265 K9000 OP269SLB OP269SLC sla 9030 K8102 opi3250
Contextual Info: S7E D 'PTEK TECHNOLOGY INC PART NUMBER REPLACED BY REPLACES • bTTflSflQ OOOllbS 0 PART NUMBER PAGE REPLACED BY REPLACES ■ PAGE *>|J M / I t '“0 ^ 1N SERIES NO CHANGE a 6N140ATXV NEU 2N SERIES NO CHANGE * CLVA SERIES NO CHANGE 3N243 3N244 3N245 NO CHANGE

KT853

Abstract: KT853A OH90U KT826 K8702 KT850B KT8150 KT851A KR8803 kt853a2
Contextual Info: >PTEK TECHNOLOGY S7E IN C D • b7TA 5ôü O O O l l b a □ PAGE PART NUMBER REPLACED BY NO CHANGE it 6N140ATXV NEU 2N SERIES NO CHANGE * CLVA SERIES NO CHANGE 3N243 3N244 3N245 NO CHANGE NO CHANGE NO CHANGE 12-4 12-4 12-4 CNY17/Î CNY17/2 CNY17/3 CNY17/4

n556

Contextual Info: SHEET 1 OF 1 29.20 [1.150 in] 1.00 [.039 in] 1.40 [.055 in] .45 [.018 in] .81 [.032 in] .50 [.020 in] 16.65 [.656 in] n5.56 [.219 in] 7.00 [.276 in] C 160012 REV PCR NO REVISED AND REDRAWN DESCRIPTION STAMPED 1001 5/8/06 CT DATE BY THE INFORMATION CONTAINED IN THIS DOCUMENT IS PROPRIETARY

ARINC 552

Abstract: Leach Relay bacr13ce2 ARINC 743a arinc 600 6 mcu tray BACR13CE2 arinc 600 8 mcu tray TSO-C117a Honeywell Document 060-4267-000 mounting tray ARINC ARINC 708
Contextual Info: AlliedSignal, Inc. MK V Enhanced Ground Proximity Warning System Installation Design Guide Part Numbers 965-0976-0xx-xxx-xxx This document is an unpublished work. Copyright
1999 AlliedSignal Inc. All rights reserved. This document and all information and expression contained herein are the property of

Contextual Info: 0 .O P IE K Product Bulletin OP535A June 1996 NPN Silicon Photodarlington Type OP535A, OP535B, OP535C • • • • Narrow receiving angle T-1 package style High current gain Small package size for space limited applications Description The OP535 consists of an NPN silicon

b0203

Abstract: B0009 B0003 B02-03 T0302 K9001 k4002 I0005 D4006 K9000
Contextual Info: - 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 - This Document can not be used without Samsung's authorization - 5. Exploded View SYSTEM B0009 I0009 B0010 B0204 B0009 B0010 B1110 B0001 B0009 B0003 R0006 I0005

Contextual Info: SHEET 1 OF 1 1.90 [.075 in] A 23.00 [.906 in] 7.10 [.280 in] SECTION A-A SCALE 2 : 1 A 54.70 [2.154 in] NOTES: 1. ALL DIMENSIONS IN MM [INCH] 2. GENERAL TOLERANCE: x.x=`0.4 x.xx=`0.25 3. MATERIAL: BRASS W/NICKLE PLATE 4. REVERSIBLE DOUBLE CUT D 16168 UPDATE TEETH ON KEY

KT853

Abstract: KT850 KT853A LTR-305D H0A0872-n55 H0A1405-1 h0a2001 MOC70T3 HOA708-1 smd diode 825B
Contextual Info: Cross Reference Competition Honeywell P/N P/N 100 H 0A0871-N55 50B2-4204 CALL PHOTODIODES, T 0 1 8 T A LL PIN 101 HOA1872-12 BC TR AN S A S S Y . PTX 5082-4205 CALL PHOTODIODES. P P PIN 10501 H 0A 1872-1 BC TRAN S A S S Y , PTX 5082-4207 CALL PHOTODIODES. T 0 1 8 T A LL PIN

Contextual Info: SHEET 1 OF 1 31.60 [1.244 in] 17.20 [.677 in] 6.30 Ø[.248 in] NOTE: 1. ALL DIMENSIONS IN MM [INCH] 2. GENERAL TOLERANCE: X.X = ± 0.4 X.XX = ± 0.25 3. ZINC ALLOY KEY, CHROME PLATED 4. USE WITH KEYLOCK SWITCH KO133 5. KEY CODE: 801 6. DENOTES CRITICAL PARAMETER

SCB-1700N

Abstract: M470T2864QZ3-CF7 T60H928 2p2s HM160HI T60H976 HD64F2110BVTE10V 3M200MP BA42-00241A BA96-04141A
Contextual Info: - This Document can not be used without Samsung's authorization - Part List : NP-N310-KA01ZA Ver. Location 0001 NULL Part Number BA81-06952B RUBBER-HDD_BOTTOM;PEBBLE,SILICON, T0.6,W Part Name & Specification Q'ty SA/SNA 5 SA Parent Part BA75-02238A 0001

Contextual Info: SHEET OF~T -1 .8 0 1 7 .3 0 S TAM PED 816 NOTES: 1. ALL DIMENSIONS IN MM 2. GENERAL TOLERANCE: X .X X = ± 0 .2 5 3. MATERIAL: ZINC ALLOY W /CHROME PLATING. E-siw/rcH t itle: A REV, 11772 ECN No, RELEASED FDR PRODUCTION DESCRIPTION THE INFORMATION CONTAINED IN THIS DOCUMENT

0P165

Abstract: K9000 OP535 OP535A OP535B OP535C
Contextual Info: OPTEK Product Bulletin OP535A June 1996 NPN Silicon Photodarlington Type OP535A, OP535B, OP535C Features • • • • Narrow receiving angle T-1 package style High current gain Small package size for space limited applications Description The OP535 consists of an NPN silicon

K9000

Abstract: OP535 OP535A OP535B OP535C
Contextual Info: OPTEK Product Bulletin OP535A June 1996 NPN Silicon Photodarlington Type OP535A, OP535B, OP535C Features • • • • Narrow receiving angle T-1 package style High current gain Small package size for space limited applications Description The OP535 consists of an NPN silicon

transistor D1843

Abstract: D1843 d1859 transistor transistor d1913 transistor D1710 D1875 D1835 transistor d1941 d1941 transistor D1853 transistor
Contextual Info: DVP-PM APPLICATION MANUAL Table of Contents Chapter 1: Program Structure of DVP-PM 1.1 O100 Main Program . 1-1 1.1.1 Manual Motion in O100 Main Program . 1-2