0P165 Search Results

OP535

Contextual Info: L7TfiSaO DDODbflB 1 57E D OPTEK TECHNOLOGY INC OPTEK Product Bulletin OP535 July 1989 Replaces January 1985 NPN Silicon Photodarlington Type OP535 • • • • Narrow receiving angle T-1 package style High current gain Small package size for space limited

P535C

Abstract: P535A
Contextual Info: 0OPTEK Product Bulletin OP535A June 1996 NPN Silicon Photodarlington Type OP535A, OP535B, OP535C Features • • • • Narrow receiving angle T-1 package style High current gain Small package size for space limited applications Description The O P535 consists of an NPN silicon

Contextual Info: @ QFTEK Product Bulletin OP505W June 1996 NPN Silicon Phototransistor Type OP505W Features • Wide receiving angle • T-1 package style • Small package size for space limited applications Coilector-Emitter Voltage. 30 V

ai 972

Abstract: K6500 OP165 OP165A OP165B OP165C OP165D OP505 OP535 E5B0
Contextual Info: 0 OPTEK P ro d u c t B u lle tin O P165A J u n e 1996 GaAs Plastic Infrared Emitting Diodes Types OP165A, OP165B, OP165C, OP165D F e a tu re s • Narrow irradiance pattern • Mechanically and spectrally matched to the OP505 and OP535 series devices • Variety of power ranges

Contextual Info: optek P roduct B ulletin OP165A June 1996 G aA s Plastic Infrared Emitting Diodes Types OP165A, OP165B, OP165C, OP165D • • Narrow irradiance pattern Mechanically and spectrally matched to the OP5Û5 and OP535 series devices • Variety of power ranges

H0A0872-n55

Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
Contextual Info: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1

axp 195

Abstract: k6500 OP165 OP165A OP165B OP165C OP165D OP505 OP535
Contextual Info: OPTEK Product Bulletin OP165A June 1996 GaAs Plastic Infrared Emitting Diodes Types OP165A, OP165B, OP165C, OP165D .200 5.08 .180 (4.57) ANODE .125 (3.18) .180 (4.57) ~ .165 (4.19) .145 (3.68) .050 (1.27)-, NOM r CATHODE .025 (0.64) .030 (0.76)NOM .015 (0.38)

Contextual Info: Product Bulletin OP165A April 1993 OPTEK G a A s Plastic Infrared Emitting Diodes Types OP165A, OP165D DIMENSIONS ARE IN INCHES MIUIMETERSI MEASUREMENT SURFACE (NOTE 3l 165(4.191, r .0 5 0 0 .2 7 1 _ , NOM 1 y \_ .02510.641 pfs »! ni* .015(0.361 SQ N0M

KT853

Abstract: OPB915S10 OH90U OPI1265 K9000 OP269SLB OP269SLC sla 9030 K8102 opi3250
Contextual Info: S7E D 'PTEK TECHNOLOGY INC PART NUMBER REPLACED BY REPLACES • bTTflSflQ OOOllbS 0 PART NUMBER PAGE REPLACED BY REPLACES ■ PAGE *>|J M / I t '“0 ^ 1N SERIES NO CHANGE a 6N140ATXV NEU 2N SERIES NO CHANGE * CLVA SERIES NO CHANGE 3N243 3N244 3N245 NO CHANGE

KT853

Abstract: KT853A OH90U KT826 K8702 KT850B KT8150 KT851A KR8803 kt853a2
Contextual Info: >PTEK TECHNOLOGY S7E IN C D • b7TA 5ôü O O O l l b a □ PAGE PART NUMBER REPLACED BY NO CHANGE it 6N140ATXV NEU 2N SERIES NO CHANGE * CLVA SERIES NO CHANGE 3N243 3N244 3N245 NO CHANGE NO CHANGE NO CHANGE 12-4 12-4 12-4 CNY17/Î CNY17/2 CNY17/3 CNY17/4

Photosensor

Abstract: OP505 OP165 OPS665 OPS666 OPS667
Contextual Info: OPTEK Product Bulletin OPS665 July 1996 LED and Photosensor Pair Types OPS665, OPS666, OPS667 OP 165 I .1 2 5 3 . IB .1 1 5 (2 .9 2 ) .2 0 0 (5 .0 8 ) .1 8 0 (4 .5 7 ) .0 5 0 .CATHODE . j t X (0 .7 6 )NOM MEASUREMENT SURFACE — — — 0P505 (4 .1 9 )

0P165

Abstract: K9000 OP535 OP535A OP535B OP535C
Contextual Info: OPTEK Product Bulletin OP535A June 1996 NPN Silicon Photodarlington Type OP535A, OP535B, OP535C Features • • • • Narrow receiving angle T-1 package style High current gain Small package size for space limited applications Description The OP535 consists of an NPN silicon

K9000

Abstract: OP535 OP535A OP535B OP535C
Contextual Info: OPTEK Product Bulletin OP535A June 1996 NPN Silicon Photodarlington Type OP535A, OP535B, OP535C Features • • • • Narrow receiving angle T-1 package style High current gain Small package size for space limited applications Description The OP535 consists of an NPN silicon

Contextual Info: 0 . O PTEK Product Bulletin OP165W April 1993 GaAs Plastic Infrared Emitting Diode Type OP165W DIMENSIONS ARE IN INCHES (MILLIMETERS * FOR IDENTIFICATION PURPOSES, ANODE LEAD IS .060 (1.52) NOM. LONGER THAN CATHODE LEAD. Features Absolute Maximum Ratings (T a = 25°C unless otherwise noted)