PHOTOSENSOR Search Results

PHOTO SENSORS

Abstract: fiber optical photo detector LED Reflective Optical Sensor Infrared photosensor OPTICAL INTERRUPTER position infrared detector object detection
Contextual Info: S. Classification of Photo Sensors The Toshiba Photo Sensor is classified as follows: Infrared LED [Emitters Visible LED Photo Transistor Photo sensors• Photo Diode IDetectors Photo 1C : Photo Interrupter ; Compound ; sensors : Photo Reflective Sensor 3. Photosensor Applications

photosensor

Abstract: QSE157 QSE158
Contextual Info: QSE156, QSE157, QSE158, QSE159 QSE156C, QSE157C, QSE158C, QSE159C Plastic Silicon OPTOLOGIC Photosensor tm Features Description • Bipolar silicon IC The QSE15X family are OPTOLOGIC® ICs which feature a Schmitt trigger at output which provides hysteresis for noise immunity and pulse shaping. The basic

Contextual Info: External dimensions Unit : mm RPR-220UC30N Reflective photosensor (photoreflector) 2.8 6.4 Through hole 2.8 Absolute maximum ratings (Ta=25°C) Unit 50 mA Reverse voltage VR 5 V PD 80 mW Collector-emitter voltage VCEO 30 V Emitter-collector voltage VECO

CNZ1120

Abstract: ON1120
Contextual Info: Transmissive Photosensors Photo lnterrupters CNZ1120 (ON1120) Photo lnterrupter For contactless SW, object detection Unit: mm • Overview CNZ1120 is a photocoupler in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element,

H6779

Abstract: TPMH9003E01 H5784 R7400U BMOM AD H5783 H5773 H6780 pmt divider circuit pmt amplifier circuit
Contextual Info: PHOTOSENSOR MODULES H5773/H5783/H6779/ H6780/H5784 SERIES High Sensitivity, Wide Dynamic Range Fast Time Response The Photosensor Module is an optical sensor with extremely high sensitivity, capable of detecting light levels 1/10000 as low as those detectable with semiconductor photodiodes.

ON1110

Contextual Info: Panasonic Transm issive Photosensors Photo Interrupters ON1110 Photo Interrupter For contactless SW, object detection • Outline O N I 110 is a p h o to co u p le r in w hich a high efficien cy G aA s infrared light em itting diode is used as the light em itting elem ent,

ON2530

Abstract: 3000Lx Reflective photosensor kodak ccd
Contextual Info: H z > y .IL — K & | $j[Z Photosensor Units (Reflective Type) ON2530 • ■Outline c e s ON2530 -> ') - X j -fnmtîbzytm j% i L / j/ M 1 -!, tlM \ % O N 2 5 3 0 Series are small light weight, high re lia b ility photo sensor unit composed of a modulated phot IC and a

IR Photosensor pcb

Abstract: ON1023 ON1024 ON1021 "Photo Interrupters" ON1022 TR 1023 oni 120
Contextual Info: Transm issive Photosensors Photo Interrupters Panasonic ON1021, ON1022, ON1023, ON1024 Photo Interrupters • Outline ■ Features O N I020 series is a transmittive photosensor series in which a high efficiency GaAs infrared light emitting diode is used as the light emitting elem ent, and a high

3 pin IR sensor pin connection

Abstract: high sensitivity reflective phototransistor ON2175 3 pin IR sensor circuit ic measurement
Contextual Info: Panasonic Reflective Photosensors Photo Reflectors ON2175 Reflective Photosensor Tape end sensor for DAT • Outline O N 2 1 7 5 is a se n so r w h ic h c o n sists o f a h ig h e ffic ie n c y G aA s infrared light em itting diode and a high sensitivity Si phototransistor

high sensitivity reflective phototransistor

Abstract: ON2152 Reflective photosensor response time
Contextual Info: Panasonic Reflective Photosensors Photo Reflectors ON2152 Reflective Photosensor • Outline O N 2152 is a p h o to se n so r detecting the change o f re fle ctiv e light in w hich a high efficiency G aA s infrared light em itting diode is used as the light em itting elem ent, and a high sensitivity Si photo transistor

photosensors

Abstract: ON1413A ON1413B
Contextual Info: Panasonic Integrated Photosensors ON1413A, ON1413B Integrated Photosensors 0.3 Unit : mm • Outline ON1413A and ON1413B are ultram iniature, highly reliable transm ittive photosensors consisting of a high-efficiency GaAs infrared light em itting diode chip that is integrated with a highsensitivity Si-integrated-photodetector chip in a double molded resin

Reflective photosensor

Abstract: ON2153
Contextual Info: Panasonic Reflective Photosensors Photo Reflectors ON2153 Reflective Photosensor • Outline U nit : mm M a rk f o r in d ic a tin g L E D s id e 7.5±0.2 O N 2153 is a p h o to se n so r detecting the change o f re fle ctiv e light cn in w hich a high efficiency G aA s infrared light em itting diode is used

OP555

Abstract: OPS695 OPS696 OPS697 OPS698
Contextual Info: 0 o p te k Product Bulletin OPS695 July 1996 LED and Photosensor Pair Types OPS695, OPS696, OPS697, OPS698 Features • • • Lateral side-looking plastic package High current transfer ratio Low cost plastic package Description The OPS695 through OPS698 each

diode A4u

Abstract: 1517 ON1517HH ON1517HH-A
Contextual Info: y h {'ÆL'Æifô /fc h i r Photosensor Units Transmittive Type) O N 1517H H -(A ) •« ü ■ Outline ON1517HH—(A) !±, i'- f t - K * , i ?vL % m, M M jfe The O N 1517H H -{A ) are small, light weight, high preci­ sion and high reliability photo sensor units composed of a

transistor BU 102

Abstract: ON1105
Contextual Info: Panasonic Transmissive Photosensors Photo Interrupters ON1105 Photo Interrupter Unit : mm M ark fo r indicating L E D side For contactless SW, object detection • Outline O N I 105 is a p h o t o c o u p l e r in w h i c h a h ig h e f f ic ie n c y G a A s

ON2170

Abstract: high sensitivity reflective phototransistor
Contextual Info: Panasonic Reflective Photosensors Photo Reflectors ON2170 Reflective Photosensor • Outline Unit : mm Mark for indicating anode side C0.5 O N2170 is a small, thin reflective photosensor consisting of a high efficiency GaAs infrared light emitting diode which is integrated

ON1122

Abstract: ON1128 T04 transistor Photosensor ir photo diode phototransistor visible light high sensitivity phototransistor transistor T04 Photosensors
Contextual Info: Panasonic Transmissive Photosensors Photo Interrupters ON1122, ON1128 Photo Interrupters U nit : mm ON1122 For contactless SW, object detection • Outline O N 1122 and O N I 128 are a photo co u p ler in w hich a v isible light e m ittin g d io d e is u se d as th e lig h t e m ittin g e le m e n t, an d a h ig h

photosensor phototransistor

Abstract: Photosensor OPC200 OPC260
Contextual Info: OPTEK Product Bulletin OPC260 July 1996 NPN Silicon Phototransistor Chip Type OPC260 Features Optek Technology photosensor chips are fabricated using the latest silicon planar diffused technology and are silicon nitride passivated for long term stability. All photosensors have an

DDC101

Abstract: DDC101P DDC101U DEM-DDC101P-C REF1004 photosensor interface WITH ADC
Contextual Info: DDC101 20-BIT ANALOG-TO-DIGITAL CONVERTER FEATURES APPLICATIONS ● MONOLITHIC CHARGE INPUT ADC ● DIGITAL FILTER NOISE REDUCTION: 0.9ppm, rms ● DIGITAL ERROR CORRECTION: CDS ● DIRECT PHOTOSENSOR DIGITIZATION ● PRECISION INSTRUMENTATION ● INFRARED PYROMETRY

QSE158

Abstract: Photosensor QSE157 QEE113 QSE156 QSE159 optologic
Contextual Info: PLASTIC SILICON OPTOLOGIC PHOTOSENSOR QSE156 QSE157 QSE158 QSE159 PACKAGE DIMENSIONS 0.175 4.44 0.100 (2.54) Ø 0.065 (1.65) 0.200 (5.08) Ø 0.095 (2.41) 0.100 (2.54) 0.500 (12.7) MIN Part Number Definitions 0.020 (0.51) SQ. 3X 0.025 (0.64) 0.075 (1.90)

Photosensor

Abstract: QPA8259 optologic
Contextual Info: HERMETIC PAIR OPTOELECTRONICS QPA8259 .0 30 0 .7 6 ' MAX .5 00 (1 2 .7 8 ) MIN PHOTOSENSOR INFRARED LED ST1661 NOTES: 1. DIM ENSIONS ARE IN INCHES [mm], 2. TOLERANCE IS ±.0 1 0 [.25] UNLESS OTHERWISE SPECIFIED. DESCRIPTION The QPA8259 consists of an 880nm AIGaAs LED

Contextual Info: PHOTODIODE Si photodiode S2281 series Si photodiode with BNC connector S2281 series is Si photodiodes sealed in a metal package with a BNC connector. This configuration allows easy connection to Hamamatsu C9329 photosensor amplifier S2281-01 has a large terminal capacitance which may cause a gain peaking to occur when C9329 is used with the

Contextual Info: MODULE Photosensor amplifier C6386-01 Light-to-voltage conversion amplifier with optical fiber Features Applications l Easy handling Built-in photodiode allows easy detection of light just by connecting to a voltmeter. l Optical fiber light input Measures light at a narrow detection point. Separating the

L14F1 phototransistor datasheet

Abstract: L14F1 PHOTOTRANSISTOR Phototransistor L14F1 Phototransistor L14G3 phototransistor 650 nm l14g1 equivalent Phototransistor L14G2 L14G3 phototransistor datasheet L14G3 phototransistor L14G1 phototransistor
Contextual Info: Optoelectronics Hermetic Silicon Photosensors Part Number IC ON (mA) Test Conditions VCE (V) Ee (mW/cm2) λp (nm) min max BVCEO (V) max ICEO @ 10 V VCE (nA) max Sensor Type TO-18 Detector Package (Convex Lens) BPW36 5 0.5 940 GaAs 1.00 – 30 100 Phototransistor