D1006 Search Results

D1006 Datasheets (69)

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
D100-6/6	Power-One	Input Current = 10-20 Output Voltage = 6 Output Current = 8.3A	Scan	PDF	2.45MB	2
D100-6A	Power-One	Input Current = 18-36 Output Voltage = 6 Output Current = 16.6A	Scan	PDF	2.45MB	2
D100-6B	Power-One	Input Current = 20-60 Output Voltage = 6 Output Current = 16.6A	Scan	PDF	2.45MB	2
D1006UK	Semelab	Metal Gate RF Silicon FET	Original	PDF	65.5KB	4
D1006UK	Semelab	METAL GATE RF SILICON FET	Original	PDF	60.2KB	4
D1006UK	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF	76.63KB	1
CESD1006LC5VU	CREATEK Microelectronics	CESD1006LC5VU is a unidirectional ESD protection diode in DFN1006 package featuring 70W peak pulse power, 1.2pF typical junction capacitance, 5V reverse stand-off voltage, and compliance with IEC 61000-4-2 ±25kV ESD protection.	Original	PDF
CESD1006UC5VBH	CREATEK Microelectronics	Bidirectional ultra low capacitance ESD protection diode in DFN1006 package with 0.7 pF typical junction capacitance, 5 V reverse stand-off voltage, 6.5 A peak pulse current, and 100 W peak pulse power rating for IEC 61000-4-2 compliance.	Original	PDF
CESD1006NC7VBS	CREATEK Microelectronics	Bidirectional ESD protection diode in DFN1006 package with 85W peak pulse power, 7.0V reverse stand-off voltage, 15pF typical junction capacitance, and compliance with IEC 61000-4-2, -4-4, and -4-5 standards for transient protection.	Original	PDF
CESD1006HC6V5U	CREATEK Microelectronics	ESD protection diode in DFN1006 package, unidirectional, 6.5V reverse stand-off voltage, 7.2V breakdown voltage, 14V clamping voltage at 52A, 450pF typical junction capacitance, rated for 720W peak pulse power, compliant with IEC 61000-4-2 ±30kV ESD protection.	Original	PDF
CESD1006UC24VBSL	CREATEK Microelectronics	Bidirectional ESD protection diode in DFN1006 package with 80W peak pulse power, 24V reverse stand-off voltage, low clamping voltage, 0.2pF typical junction capacitance, and compliance with IEC 61000-4-2, IEC 61000-4-4, and IEC 61000-4-5 standards.	Original	PDF
CESD1006LC5VBH	CREATEK Microelectronics	Bidirectional ESD protection diode in DFN1006 package with 230W peak pulse power, 5V reverse stand-off voltage, 1.5pF typical junction capacitance, and protection up to ±30kV IEC 61000-4-2.	Original	PDF
CESD1006NC3V3B	CREATEK Microelectronics	ESD protection diode in DFN1006 package with 80W peak pulse power, 3.3V reverse stand-off voltage, 4.1V breakdown voltage, 8V clamping voltage at 10A, 15pF junction capacitance, and IEC 61000-4-2 ±30kV ESD protection.	Original	PDF
CESD1006UC5VBL	CREATEK Microelectronics	Ultra low capacitance ESD protection diode in DFN1006 package with 5V reverse stand-off voltage, 0.35pF typical junction capacitance, 60W peak pulse power, and bidirectional configuration for data line protection.	Original	PDF

CESD1006NC2V5B	CREATEK Microelectronics	CESD1006NC2V5B is a bidirectional ESD protection diode in DFN1006 package with 60W peak pulse power, 2.5V reverse stand-off voltage, 8V clamping voltage at 8A, 15pF junction capacitance, and compliance with IEC 61000-4-2 ±25kV.	Original	PDF
CESD1006UC24VBS	CREATEK Microelectronics	Bidirectional ESD protection diode in DFN1006 package with 32W peak pulse power, 4A peak pulse current, 0.45pF typical junction capacitance, and 8.0V clamping voltage at 4A, designed for data and power line protection.	Original	PDF
CESD1006HC7VU	CREATEK Microelectronics	Uni-directional ESD protection diode in DFN1006 package with 400W peak pulse power, 7.0V reverse stand-off voltage, 140pF typical junction capacitance, and IEC 61000-4-2 ±30kV contact/air discharge protection.	Original	PDF
CESD1006UC18VBS	CREATEK Microelectronics	Bidirectional ESD protection diode in DFN1006 package with 32W peak pulse power, 18V reverse stand-off voltage, low clamping voltage, 0.5pF typical junction capacitance, and compliance with IEC 61000-4-2, IEC 61000-4-4, and IEC 61000-4-5 standards.	Original	PDF
CESD1006HC4V5U	CREATEK Microelectronics	ESD protection diode in DFN1006 package with 120W peak pulse power, 4.5V reverse stand-off voltage, 80pF typical junction capacitance, and IEC 61000-4-2 ±30kV ESD protection for one data or power line.	Original	PDF
CESD1006HC6V3U	CREATEK Microelectronics	ESD protection diode in DFN1006 package, unidirectional, 6.3V reverse stand-off voltage, 720W peak pulse power (8/20us), 450pF typical junction capacitance, rated for IEC 61000-4-2 ±30kV ESD protection.	Original	PDF

D1006 Price and Stock

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Suzhou Good-Ark Electronics Co Ltd GSES12VD1006-2B TVS DIODE 12VWM 26VC DFN10062L
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	GSES12VD1006-2B	Digi-Reel	19,000		1	1 $0.18 10 $0.11 100 $0.07 1000 $0.04 10000 $0.03	Buy Now
	GSES12VD1006-2B	Cut Tape	19,000		1	1 $0.18 10 $0.11 100 $0.07 1000 $0.04 10000 $0.03	Buy Now
	GSES12VD1006-2B	Tape & Reel	10,000		10,000	1 - 10 - 100 - 1000 - 10000 $0.03	Buy Now
Wolfspeed C6D10065E DIODE SIL CARB 650V 35A TO252-2
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	C6D10065E	Tube	2,566		1	1 $5.62 10 $5.62 100 $2.78 1000 $2.21 10000 $2.01	Buy Now
Mouser Electronics	C6D10065E		2,473			1 $5.27 10 $2.79 100 $2.54 1000 $2.21 10000 $2.00	Buy Now
Richardson RFPD	C6D10065E				1	1 $2.76 10 $2.76 100 $2.62 1000 $2.62 10000 $2.62	Buy Now
Chip One Stop	C6D10065E	Tube	3,263	0 Weeks, 1 Days	1	1 $4.51 10 $2.29 100 $2.06 1000 $1.66 10000 $1.66	Buy Now
SMC Diode Solutions S3D10065E1 DIODE SCHOTTKY SILICON CARBIDE S
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	S3D10065E1	Digi-Reel	2,500		1	1 $1.86 10 $1.18 100 $0.80 1000 $0.58 10000 $0.58	Buy Now
	S3D10065E1	Cut Tape	2,500		1	1 $1.86 10 $1.18 100 $0.80 1000 $0.58 10000 $0.58	Buy Now
SMC Diode Solutions S3D10065A DIODE SIL CARB 650V 10A TO220AC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	S3D10065A	Tube	1,914		1	1 $2.02 10 $2.02 100 $0.87 1000 $0.64 10000 $0.53	Buy Now
Wolfspeed E6D10065A DIODE SIL CARBIDE 650V 34A TO220
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	E6D10065A	Bulk	985		1	1 $5.61 10 $5.61 100 $2.67 1000 $2.22 10000 $2.22	Buy Now
Richardson RFPD	E6D10065A				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote

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D1006 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: bOE D SENELAB • 0133107 ODDGTED 27b ■ SMLB 'T-'S V 'ZS PLC SEMELAB D1006UK NEW PRODUCT RF SILICON FET GOLD METALLISED MULTI-PURPOSE SILICON DMOSRFFET 120W -28V-175M H z SINGLE ENDED MECHANICAL DATA D im ensions FEATURES • SIMPLIFIED AMPLIFIER DESIGN	OCR Scan	D1006UK -28V-175M	PDF
Contextual Info: nil TetraFET Vrrr = mi D1006UK SEM E LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 1 2 0 W -2 8 V -1 7 5 M H z SINGLE ENDED FEATURES u • SIMPLIFIED AMPLIFIER DESIGN Q N K w O P • SUITABLE FOR BROAD BAND APPLICATIONS	OCR Scan	D1006UK	PDF
B0701 Abstract: K4002 I0002 D1006 Contextual Info: - 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 - This Document can not be used without Samsung's authorization - 5. Exploded View SYSTEM ASSY LCD I0006 T0001 W3015 B0013 M0001 M3000 I0001 W3006 D0005 I0009 D1006	Original	I0006 T0001 W3015 B0013 M0001 M3000 I0001 D0005 D1006 W3006 B0701 K4002 I0002	PDF
1455 Abstract: D1006UK 20swg Contextual Info: TetraFET D1006UK METAL GATE RF SILICON FET MECHANICAL DATA B C A 1 E 2 3 F 6 5 G 4 J GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 120W – 28V – 175MHz SINGLE ENDED D H M FEATURES • SIMPLIFIED AMPLIFIER DESIGN Q K N O P • SUITABLE FOR BROAD BAND APPLICATIONS	Original	D1006UK 175MHz 20swg 19swg 1455 D1006UK	PDF
D1006UK Abstract: d1006 20swg FT-82 VG10 Contextual Info: TetraFET D1006UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA B C A 1 E 2 3 G F 6 5 4 J GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 120W – 28V – 175MHz SINGLE ENDED D H K FEATURES • SIMPLIFIED AMPLIFIER DESIGN Q M N O P • SUITABLE FOR BROAD BAND APPLICATIONS	Original	D1006UK 175MHz D1006K 40-200pF 16-100pF 100nF 20swg D1006UK d1006 FT-82 VG10	PDF
samsung r522 Abstract: r522 D1006 Contextual Info: - 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 - This Document can not be used without Samsung's authorization - 5. Exploded View ASSY LCD SYSTEM I0006 T0001 W3015 B0013 M0001 M3000 I0001 W3006 D0005 I0009 D1006	Original	I0006 T0001 W3015 B0013 M0001 M3000 I0001 D0005 D1006 W3006 samsung r522 r522	PDF
20swg Abstract: VG10 Contextual Info: TetraFET D1006UK METAL GATE RF SILICON FET MECHANICAL DATA B C A 1 E 2 3 G F 6 5 4 J GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 120W – 28V – 175MHz SINGLE ENDED D H K FEATURES • SIMPLIFIED AMPLIFIER DESIGN Q M N O P • SUITABLE FOR BROAD BAND APPLICATIONS	Original	D1006UK 175MHz 100nF D1006K 40-200pF 16-100pF 40-200pF 20swg VG10	PDF
Contextual Info: TetraFET D1006UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA B C A 1 E 2 3 G F 6 5 4 J GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 120W – 28V – 175MHz SINGLE ENDED D H K FEATURES • SIMPLIFIED AMPLIFIER DESIGN Q M N O P • SUITABLE FOR BROAD BAND APPLICATIONS	Original	D1006UK 175MHz 760ail: D1006K 40-200pF 16-100pF 100nF	PDF
Contextual Info: Illl TetraFET eFTI SEME INI D1006UK LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 120W -28V-175M Hz SINGLE ENDED 4 1 i< 2 3 ^ -\| F G * r FEATURES • SIMPLIFIED AMPLIFIER DESIGN á"" A Q N P DV PIN 1 SOURCE	OCR Scan	D1006UK -28V-175M	PDF
D1006UK Contextual Info: TetraFET D1006UK METAL GATE RF SILICON FET MECHANICAL DATA B C A 1 E 2 3 F 6 5 G 4 J GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 120W – 28V – 175MHz SINGLE ENDED D H M FEATURES • SIMPLIFIED AMPLIFIER DESIGN Q K N O P • SUITABLE FOR BROAD BAND APPLICATIONS	Original	D1006UK 175MHz 381MHz D1006UK	PDF
1455 Abstract: 20swg D1006UK Contextual Info: TetraFET D1006UK METAL GATE RF SILICON FET MECHANICAL DATA B C A 1 E 2 3 G F 6 5 4 J GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 120W – 28V – 175MHz SINGLE ENDED D H K FEATURES • SIMPLIFIED AMPLIFIER DESIGN Q M N O P • SUITABLE FOR BROAD BAND APPLICATIONS	Original	D1006UK 175MHz 20swg 19swg 1455 D1006UK	PDF
hart protocol Contextual Info: Quad-Channel, 12-Bit, Serial Input, 4 mA to 20 mA Output DAC with Dynamic Power Control and HART Connectivity AD5737 Data Sheet FEATURES Each channel has a corresponding CHART pin so that HART signals can be coupled onto the current output of the AD5737. 12-bit resolution and monotonicity	Original	12-Bit, 12-bit AD5737 AD5737. AD5737 04-10-2012-C MO-220-VMMD-4 64-Lead CP-64-3) AD5737ACPZ hart protocol	PDF
XAL4040-103 Abstract: AD5737 AD5755-1 ADP2302 ADP2303 ADR02 ADR445 100670-2 Contextual Info: Quad-Channel, 12-Bit, Serial Input, 4 mA to 20 mA Output DAC with Dynamic Power Control and HART Connectivity AD5737 7.4 V to 29.5 V using a dc-to-dc boost converter optimized for minimum on-chip power dissipation. FEATURES 12-bit resolution and monotonicity	Original	12-Bit, AD5737 12-bit AD5737. AD5737 MO-220-VMMD-4 080108-C 64-Lead CP-64-3) AD5737ACPZ XAL4040-103 AD5755-1 ADP2302 ADP2303 ADR02 ADR445 100670-2	PDF
315mhz module receiver Abstract: ASK transmitter 433mhz D1006A 433MHz IC RF Transmitter 315MHz rf traNsmitter receiver 315mhz HT66F03 433mhz transmitter 433MHZ PCB antenna antenna 433MHZ PCB Contextual Info: HT66F03T3/68F03T3 MCU with 315MHz/433MHz ASK Transmitter HT66F03T3/68F03T3 MCU with 315MHz/433MHz ASK Transmitter D/N：HA0220E General Description The HT66F03T3/68F03T3 is a Flash type MCU with an RF ASK transmitter function. Data generated from the MCU will be transmitted at a carrier frequency of 315M/433MHz to a	Original	HT66F03T3/68F03T3 315MHz/433MHz D/NHA0220E 315M/433MHz 300MHz 450MHz 10dBm 315mhz module receiver ASK transmitter 433mhz D1006A 433MHz IC RF Transmitter 315MHz rf traNsmitter receiver 315mhz HT66F03 433mhz transmitter 433MHZ PCB antenna antenna 433MHZ PCB	PDF

tps51620 Abstract: alc889 bq24721 tps51125 ITE8512E C5134 TI_BQ24721C_QFN_32P INVENTEC JMB385 fds8884 Contextual Info: www.kythuatvitinh.com KiliManjaro CS Build A02 2008.02.04 Digitally signed by dd DN: cn=dd, o=dd, ou=dd, email=dddd@yahoo. com, c=US Date: 2009.11.29 17:18:29 +07'00' EE DATE POWER DATE DRAWER DESIGN CHECK RESPONSIBLE DATE CHANGE NO. REV 3 SIZE = FILE NAME : XXXX-XXXXXX-XX	Original	23-Oct-2007 tps51620 alc889 bq24721 tps51125 ITE8512E C5134 TI_BQ24721C_QFN_32P INVENTEC JMB385 fds8884	PDF
tps51125 Abstract: alc889 c2233 fds8884 bq24721 BQ24721C Inventec IT8512E tps51125 kbc AR8121 Contextual Info: TETON2 DDRIII-Pre MV BUILD 2008.06.18 EE DATE DATE POWER DRAWER DESIGN CHECK RESPONSIBLE DATE CHANGE NO. REV 3 SIZE = FILE NAME : XXXX-XXXXXX-XX XXXXXXXXXXXX P/N INVENTEC TITLE VER : TETON2 SIZE CODE A3 CS SHEET DOC. NUMBER REV 1310A22077-0-MTRA02 1 OF 53	Original	1310A22077-0-MTRA02 R5000 R5002 D5002 S3048 PAD506 S3049 D4001 R4001 R4000 tps51125 alc889 c2233 fds8884 bq24721 BQ24721C Inventec IT8512E tps51125 kbc AR8121	PDF
Contextual Info: GENERAL OPERATING CHARACTERISTICS PRESSURE RANGE OVERPRESSURE TEMPERATURE RANGES SUPPLY VOLTAGE SUPPLY CURRENT SHORT CIRCUIT LIMIT OUTPUT RIPPLE GROUND REFERENCE 12.6 -5 TO + 5 IN. H? 0 5 PSI STORAGE -55 TO +125°C OPERATE - 40 TO +85°C COMPENSATED +5 TO +45°C	OCR Scan	163PC01D36	PDF
C3D10060 Abstract: C3D10060G CSD10060 TO-263-2 Contextual Info: D10060G–Silicon Carbide Schottky Diode VRRM = 600 V Z-Rec Rectifier IF AVG = 10 A Qc = 25 nC Features • • • • • • • Package 600-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation	Original	C3D10060G 600-Volt O-263-2 C3D10060G C3D10060 CSD10060 TO-263-2	PDF
BFM12 Abstract: BFM33 BFM34 BFM21 BFM-12 BFM32 D1022UK D1053UK D1015UK Contextual Info: R.F. Division Semelab Device Type Working Power Working b v dss *D Freq. W atts Voltage Volts Am ps Min. Gain 13db BFM12 4 28 70 5 200MHz BFM21 0.75 0.75 4 28 12 65 0,2 0.2 2.5GHz 2.5GHz 1 2GHz 11db 13db 1.6 2 1GHz 13db 1GHz 13db 1GHz 13db 0.8GHz 13db 16db	OCR Scan	BFM12 BFM21 BFM22 BFM23 BFM32 BFM33 BFM34 BFM35 D1001UK D1002UK BFM33 BFM34 BFM-12 BFM32 D1022UK D1053UK D1015UK	PDF
opti 82c392 Abstract: teac fd 235hf opti 486 chipset Contextual Info: OPTÌ-486SXWB PC/AT Chipset 82C493/82C392/82C206 Preliminary 82C493/82C392 DATA BOOK Version 1.1 August 16, 1991 / OPTi, Inc., 2525 Walsh A venue, Santa Clara, CA 95051 (408) 9 8 0 -8 1 7 8 FAX: 4 0 8 -9 8 0 -8 8 6 0 Disclaimer This specification is subject to change without notice. OPTi, Incorporated assumes	OCR Scan	-486SXWB 82C493/82C392/82C206) 82C493/82C392 82C206 80486/P23N opti 82c392 teac fd 235hf opti 486 chipset	PDF
Contextual Info: D10060–Silicon Carbide Schottky Diode VRRM = 600V Zero Recovery Rectifier IF = 10A Qc = 28nC Features • • • • • • • Package 600 Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High Frequency Operation Temperature Independent Switching Behavior	Original	CSD10060â O-263-2 O-220-2 CSD10060	PDF
d100 Contextual Info: Voltage Sensitive Relays WILMAR Protective Relays – D100X Series, Close Differential Function: • ANSI/IEEE C37.90-1978 • UL file No. E58048 • CSA file No. LR61158 0.5 Close Differential Relays are voltage sensitive. The pick-up and drop-out voltage settings are independently adjustable, which allows precise setting of the	Original	D100X E58048 LR61158 D100-3X D100-4X D100-8X D100-5X D100-7X d100	PDF
C3D10065I Contextual Info: D10065I Silicon Carbide Schottky Diode Z-Rec Rectifier IF; 10 A TC<125˚C= = 25 nC Package 650-Volt Schottky Rectifier Ceramic Package provides 2.5kV isolation Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Behavior	Original	C3D10065I 650-Volt O-220-2 C3D10065I	PDF
Futaba display Abstract: HT7L4091 HT1632C HT16K33 ht8972 HT12D ht82v46 HT46F47 Futaba VFD ht12e dip 18 Contextual Info: Selection Guide Holtek Company Introduction Introduction Continual growth and a persistent stream of new product releases onto the global market has been the hallmark of Holtek Semiconductor since the establishment of the company in 1983 to the present date. Although remaining focused in the area of	Original		PDF

D1006 Search Results

D1006 Datasheets (69)

D1006 Price and Stock

Suzhou Good-Ark Electronics Co Ltd GSES12VD1006-2B

Wolfspeed C6D10065E

SMC Diode Solutions S3D10065E1

SMC Diode Solutions S3D10065A

Wolfspeed E6D10065A

D1006 Datasheets Context Search

B0701

1455

D1006UK

samsung r522

20swg

D1006UK

1455

hart protocol

XAL4040-103

315mhz module receiver

tps51620

tps51125

C3D10060

BFM12

opti 82c392

d100

C3D10065I

Futaba display