JANSR2N7261 Search Results

Contextual Info: PD - 91806C RADIATION HARDENED POWER MOSFET SURFCACE MOUNT LCC-18 IRHE7130 JANSR2N7261U 100V, N-CHANNEL REF: MIL-PRF-19500/601 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHE7130 100K Rads (Si) IRHE3130 300K Rads (Si) IRHE4130

2N7261U

Abstract: IRHE7130 2N7261 equivalent IRHE8130 JANSH2N7261U JANSR2N7261U
Contextual Info: PD - 91806A REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR IRHE7130 IRHE8130 JANSR2N7261U JANSH2N7261U N CHANNEL 100Volt, 0.18Ω Ω , MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage

transistors H128

Abstract: 2N7261 IRHF7130 IRHF8130 JANSR2N7261 HG-18
Contextual Info: Data Sheet No. PD-9.653A INTERNATIONAL RECTIFIER l l O R l AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS IRHF7130 IRH FBI 3 0 ;n N-CHANNEL 2 IM-7261 JANSR2N7261 JANSHSN7S61 MEGA RAD HARD 100 Volt, 0.18 2, MEGA RAD HARD HEXFET International Rectifier’s MEGA RAD HARD Technology HEXFETs

IRHE7130

Abstract: IRHE3130 IRHE4130 IRHE8130 JANSR2N7261U LCC-18
Contextual Info: PD - 91806B RADIATION HARDENED POWER MOSFET SURFCACE MOUNT LCC-18 IRHE7130 JANSR2N7261U 100V, N-CHANNEL REF: MIL-PRF-19500/601 ™ RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level R DS(on) IRHE7130 100K Rads (Si) 0.18Ω IRHE3130 300K Rads (Si)

IRHE3130

Abstract: IRHE4130 IRHE7130 IRHE8130 JANSR2N7261U LCC-18
Contextual Info: PD - 91806C RADIATION HARDENED POWER MOSFET SURFCACE MOUNT LCC-18 IRHE7130 JANSR2N7261U 100V, N-CHANNEL REF: MIL-PRF-19500/601 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHE7130 100K Rads (Si) IRHE3130 300K Rads (Si) IRHE4130

2N7261

Abstract: 2N7261 equivalent reverse bias diode characterstics IRHF7130 IRHF8130 JANSH2N7261 JANSR2N7261
Contextual Info: PD - 90653B IRHF7130 IRHF8130 JANSR2N7261 JANSH2N7261 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N CHANNEL 100Volt, 0.18Ω Ω , MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage

IRF 250

Abstract: IRF N-Channel Power MOSFETs IRHF3130 IRHF4130 IRHF7130 IRHF8130 JANSR2N7261
Contextual Info: PD - 90653F IRHF7130 JANSR2N7261 100V, N-CHANNEL REF: MIL-PRF-19500/601 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-39 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHF7130 IRHF3130 IRHF4130 IRHF8130 Radiation Level 100K Rads (Si) 300K Rads (Si)

78009

Abstract: g268a IRHF3130 IRHF4130 IRHF7130 IRHF8130 JANSR2N7261
Contextual Info: PD - 90653D IRHF7130 JANSR2N7261 100V, N-CHANNEL REF: MIL-PRF-19500/601 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-39 ™ RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level R DS(on) IRHF7130 100K Rads (Si) 0.18Ω IRHF3130 300K Rads (Si)

IRHF3130

Abstract: IRHF4130 IRHF7130 IRHF8130 JANSR2N7261
Contextual Info: PD - 90653E IRHF7130 JANSR2N7261 100V, N-CHANNEL REF: MIL-PRF-19500/601 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-39 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHF7130 100K Rads (Si) IRHF3130 300K Rads (Si) IRHF4130

Contextual Info: PD - 90653F IRHF7130 JANSR2N7261 100V, N-CHANNEL REF: MIL-PRF-19500/601 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-39 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHF7130 IRHF3130 IRHF4130 IRHF8130 Radiation Level 100K Rads (Si) 300K Rads (Si)

IRF460

Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Contextual Info: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,

IRFM9034

Abstract: irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261
Contextual Info: International Rectifier Government and Space Products BVDSS Part Number Channel V RDS(on) (Ω) PD @ TC = 25°C ID @ T =100°C C (A) ID @ T =25 C (A) Total Dose Rating Rads (Si) (W) Fax-on-Demand HEXFET Power MOSFETs to view a data sheet, click on the part number

10RIA10

Abstract: HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF
Contextual Info: Index International Rectifier Government and Space Products Level of Quality Part Number Rectifiers Voltage Current CECC Issue Issue Assessment and CECC V (A) Specs Number Date 50 000 Screen Level Options Fax-on-Demand CECC-Qualifed, Europe Mfg. in Italy

Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED N-CHANNEL MOSFET Reference MIL-PRF-19500/601 DEVICES LEVELS 2N7261 2N7261U JANSR (100K RAD(Si)

2N6764 JANTX

Abstract: 91447 IR2113L
Contextual Info: Government / Space Products Catalog of Available Documents Revised 5/11/99 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100  Radiation-Hardened HEXFET Description Datasheets IRH7054 IRH7130 IRH7150 IRH7230 IRH7250 IRH7250SE IRHF7330SE IRHF7430SE IRH7450

2N7261

Abstract: 2N7261U JANSF2N7261 JANSF2N7261U JANSR2N7261 JANSR2N7261U
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED N-CHANNEL MOSFET Reference MIL-PRF-19500/601 DEVICES LEVELS 2N7261 2N7261U JANSR (100K RAD(Si)

JANSR2N7261

Contextual Info: International lÜRectifier Government and Space HEXFET Power MOSFETs Radiation Hardened N & P Channel R tltJC Max. Pd@ Case rc = ioo°c TC = 25°C Outline A (K/W) (W) Number (1) (2) Pari b v dss Number (V) RDS(on) (Ohms) IRHE7110 100 0.60 3.1 2.0 11 11 IRHE8110

2N6782 JANTX

Abstract: 2N6758 JANTX 2N6756 JANTX 2N6766 JANTX 2N6792 JANTX 2N6796U 60022 2N7236 2n6806 jantx 2N6770 JANTX
Contextual Info: Government / Space Products Catalog of Available Documents Revised 8/27/98 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100  Radiation-Hardened HEXFET Document # Pages Date IRH7054 90883 5 Oct-96 IRH7150 90677 13 Oct-96 IRH7250 90697 13 Oct-96 IRH7450SE

IRHE7110

Abstract: IRHE7130 IRHE7230 IRHE8110 IRHE8130 IRHE8230 IRHE9130 IRHN7054 IRHN7130 1RHF8130
Contextual Info: 4flss4s2 DQlblbb 2Û4 - From ,R HEXFET Paît Number bvdss V RDS(on) (OHMS) RAD HARD id @ Tq = 25°C •d @ Tc = 100”C RthJC Max. Pd @ Tc = 25-C (A) (A) (K/W) (W) IRHE7110 100 0.60 3.1 2.0 11 11 IRHE8110 100 0.60 3.1 2.0 11 11 22 IRHE7130 100 0.18 8.0 5.0

Contextual Info: I n t e r n a t io n a l R e c t if ie r Government and Space Products Part Numb« Wffl bvdss Vota ROS(on) (Ohm) ID* TC«25" 4A"P*) Iq O TolOO* (Amp») Total Dow Riling Rids (St) Pq O Tc»2P (Witts) Fu-ooDwnmd Numbtr _ _ _ _ _ _ _ -_ _ _ _ _ _ _ _ _ _ _