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    IXTM12N50 Search Results

    IXTM12N50 Datasheets (10)

    Select Manufacturer
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXTM12N50
    IXYS High Voltage Power MOSFETs Scan PDF 1.11MB 12
    IXTM12N50
    IXYS High Voltage Power MOSFETs Scan PDF 1.11MB 12
    IXTM12N50
    IXYS 12 AMPS/ 450-500V/ 0.4OM/0.5OM Scan PDF 67.35KB 1
    IXTM12N50
    Unknown FET Data Book Scan PDF 59.77KB 1
    IXTM12N50
    Sharp 500 V, 12 A, sourse-drain diode Scan PDF 67.36KB 1
    IXTM12N50A
    IXYS High Voltage Power MOSFETs Scan PDF 1.11MB 12
    IXTM12N50A
    IXYS High Voltage Power MOSFETs Scan PDF 1.11MB 12
    IXTM12N50A
    IXYS HIGH VOLTAGE POWER MOSFET DIE Scan PDF 49.52KB 1
    IXTM12N50A
    Unknown Shortform Datasheet & Cross References Data Short Form PDF 77.08KB 1
    IXTM12N50A
    Unknown FET Data Book Scan PDF 59.77KB 1

    IXTM12N50 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    12N50

    Abstract: IXTH12N45 IXTH12N50 IXTM12N45 IXTM12N50 12N45
    Contextual Info: I X Y S CORP 1ÔE D • 4bôb2Sb QOQOblB =1 IXTH12N45 , IXTH12N50, IXTM12N45, IXTM12N50 12 AM PS, 450-500 V, 0.4Q/0.5Q MAXIMUM RATINGS Parameter Sym. Drain-Source Voltage 1 Gate-Source Voltage Transient Drain Current Continuous (Tc =25°C) Vdss VdGR Vgs


    OCR Scan
    ixth12n45ixth12n50ixtm12n45ixtm12n50+4o-24700a//js12n5012n45 PDF

    IXTH12N50

    Contextual Info: I X Y S CORP 1 ÔE D • 4bôb22b GOGGblB <=1 IXTH12N45, IXTH12N50, IXTM12N45, IXTM12N50 12 AMPS, 450-500 V, 0.4Q/0.5Q MAXIMUM RATINGS Parameter Sym. Drain-Source Voltage 1 Drain-Gate Voltage (RQS=1.0 MQ) (1) Gate-Source Voltage Continuous Gate-Source Voltage Transient


    OCR Scan
    ixth12n45ixth12n50ixtm12n45ixtm12n50+2o-204o-220 PDF

    IRF250

    Abstract: IXTH13P20 IXTP2N95 IXTP2N100A IXTP2N95A IXTP4N100 IXTP4N100A IXTP4N90 IXTP4N90A IXTP4N95
    Contextual Info: I X Y S CORP 1ÔE D • 4böb52b QQODSbl S ■ f JIGH VOLTAGE POWER MOSFETs The IXYS family of high voltage Nand P-channel Power MOSFETs is designed to provide superior per­ formance and ruggedness in high voltage switching applications. In addition, they are directly com­


    OCR Scan
    00v/12airf250ixth13p20ixtp2n95+7ixtp2n100aixtp2n95aixtp4n100ixtp4n100aixtp4n90ixtp4n90aixtp4n95 PDF

    IXFH15N100

    Abstract: 2N3051 IXFX15N100 IXFH40N30 IXFM6N90 IRFP450R IXTH24N50L IXTH26N50 IXFH20N50 IXFH9N80
    Contextual Info: STI Type: IRFP354 Notes: Breakdown Voltage: 450 Continuous Current: 14 RDS on Ohm: 0.35 Trans Conductance Mhos: 5.9 Trans Conductance A: 8.4 Gate Threshold min: 2.0 Gate Threshold max: 4.0 Resistance Switching ton: 14 TYP Resistance Switching toff: 89 TYP


    Original
    irfp354o-247irfp360lc2n3049die+132c3049o-204aa/to-3ixtm20n55aixfh15n1002n3051ixfx15n100ixfh40n30ixfm6n90irfp450rixth24n50lixth26n50ixfh20n50ixfh9n80 PDF

    IXTH13P20

    Abstract: 2n7100 IXTP2P50 MOSFET IRF460 irf460 to-247 IXTM10P50 IXTM11P50 IXTP4N100A 2n7103 irf460
    Contextual Info: I X Y S CORP 1ÔE D • 4böb52b QQODSbl S ■ f JIGH VOLTAGE POWER MOSFETs The IXYS family of high voltage Nand P-channel Power MOSFETs is designed to provide superior per­ formance and ruggedness in high voltage switching applications. In addition, they are directly com­


    OCR Scan
    ixth13p202n7100ixtp2p50mosfet irf460+6irf460 to-247ixtm10p50ixtm11p50ixtp4n100a2n7103irf460 PDF

    IXTM6N90A

    Contextual Info: 4686226 03E 00145 I X Y S CORP I X Y S CORP □3 D D Ë T | 4bflbS2b DDODIMS 2 N-Channel MOSFETs Drain Current Id @ 25 °C C ase On R esistance Part Drain-Source Voltage Number V BR DSS l[>(Cont) lO(Pulsed) RDS(on) (Volts) (Amps) (Amps) (O hm s) 1000 1000


    OCR Scan
    ixtm5n100aixtm5n100ixtm4n100aixtm4n100+7ixtm2n100aixtm2n100ixtm5n95aixtm5n95ixtm4n95aixtm4n95ixtm6n90a PDF

    IXTH15N45A

    Contextual Info: 4686226 I X Y S 03 CORP d F | 4 1. f l t=,2 2 1> D D O O E I S 2 |~~ / 3 / " □IXYS TECHNICAL DATA SHEET August 1988 DATA SHEET NO. 1004A IRFC450 High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series V B R D S S - . 500V


    OCR Scan
    irfc4502n67692n6770irf450/irfp450+7irf451/irfp451irf452/irfp4521rf453/irfp453ixth15n50a/ixtm15n50aixth15n45a/ixtm15n45a12n50a/ixtm12n50aixth15n45a PDF

    1800 IXYS

    Abstract: IXTM4N70A IXTM4N80 IXTM4N90 IXTM5N100 to-204
    Contextual Info: - m s it * f M t Vd s or € t JV £ Ta=25°C Vg s Ig s s Id s s Vg s th) F D s (on) Vd s = * /CH * /CH g fs lo (o n ) Ciss Coss C rss (*typ) (*typ) (*typ) (V) (W) (A) (nA) Vg s (V) < UA) Vd s (V) Id (mA) (max) (max) (max) (V) (V) (pF) (pF) (pF) 5^ m m %


    OCR Scan
    m4n50t0-2041xtm4n50ao-204+81xtm4n70ixtm4n70aixtm10n90a1800 ixysixtm4n80ixtm4n90ixtm5n100to-204 PDF

    IRFP450 inverter

    Abstract: IXTH12N50A IXTH15N45A 2N6769 2N6770 IRFC450 IXTH12N50 ITXH12N45
    Contextual Info: 4686226 I X Y S CORP 03 D e | 4 fl t. E S t. DOODEIS 5 / 7 □IXYS TECHNICAL DATA SHEET August 1988 DATA SHEET NO. 1004A IRFC450 High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series V B R D S S - . 500V 0.4Q RDS(on) .


    OCR Scan
    irfc4502n67692n6770irf450/irfp450+11irf451/irfp451irf452/irfp4521rf453/irfp453ixth15n50a/ixtm15n50aixth15n45a/ixtm15n45aixth12n50a/ixtm12n50airfp450 inverterixth12n50aixth15n45aixth12n50itxh12n45 PDF