12N45 Search Results

abb press-pack igbt

Abstract: 5slx12n4506
Contextual Info: VCE IC = = 4500 V 40 A IGBT-Die 5SMX 12N4507 Die size: 14.3 x 14.3 mm Doc. No. 5SYA1626-03 July 06 • • • • Low loss, rugged SPT technology Smooth switching for good EMC Emitter metallisation optimized for press-pack packaging Passivation: SIPOS and Silicon Nitride plus Polyimide

Contextual Info: VCE IC = = 4500 V 55 A IGBT-Die 5SMY 12N4500 Die size: 14.3 x 14.3 mm Doc. No. 5SYA 1646-00 Jan 08 • • • • Ultra low loss thin IGBT die Highly rugged SPT+ design Emitter metallisation optimized for press-pack packaging Passivation: SIPOS and Silicon Nitride plus Poymide

abb press-pack igbt

Contextual Info: VCE IC = = 4500 V 55 A IGBT-Die 5SMY 12N4501 Die size: 14.3 x 14.3 mm Doc. No. 5SYA 1646-01 11 11 • • • • Ultra low loss thin IGBT die Highly rugged SPT+ design Emitter metallisation optimized for press-pack packaging Passivation: SIPOS and Silicon Nitride

Contextual Info: VCE IC = = 4500 V 40 A IGBT-Die 5SMX 12N4507 Die size: 14.3 x 14.3 mm Doc. No. 5SYA1626-01 Sep 05 • • • • Low loss, rugged SPT technology Smooth switching for good EMC Emitter metallisation optimized for press-pack packaging Passivation: SIPOS and Silicon Nitride plus Polyimide

Contextual Info: VCE IC = = 4500 V 40 A IGBT-Die 5SMX 12N4506 Die size: 14.3 x 14.3 mm Doc. No. 5SYA1624-02 Aug 04 • • • • Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: SIPOS and Silicon Nitride plus Polyimide

Contextual Info: VRRM = IF = 4500 V 110 A Fast-Diode Die 5SLY 12N4500 Die size: 14.3 x 14.3 mm Doc. No. 5SYA 1674-00 Jan 08 • • • • Ultra low losses Fast and soft reverse-recovery Large SOA Passivation: SIPOS and Silicon Nitride Maximum rated values 1 Parameter Symbol

Contextual Info: VCE IC = = 4500 V 40 A IGBT-Die 5SMX 12N4506 Die size: 14.3 x 14.3 mm Doc. No. 5SYA1624-03 Sep 05 • • • • Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: SIPOS and Silicon Nitride plus Polyimide

IGBT abb

Abstract: abb press-pack igbt IGBT abb datasheets 5slx12n4506
Contextual Info: VCE IC = = 4500 V 40 A IGBT-Die 5SMX 12N4507 Die size: 14.3 x 14.3 mm Doc. No. 5SYA1626-00 Aug.04 • • • • Low loss, rugged SPT technology Smooth switching for good EMC Emitter metallisation optimized for press-pack packaging Passivation: SIPOS and Silicon Nitride plus Polyimide

12N50

Abstract: IXTH12N45 IXTH12N50 IXTM12N45 IXTM12N50 12N45
Contextual Info: I X Y S CORP 1ÔE D • 4bôb2Sb QOQOblB =1 12N45 , IXTH12N50, 12N45, IXTM12N50 12 AM PS, 450-500 V, 0.4Q/0.5Q MAXIMUM RATINGS Parameter Sym. Drain-Source Voltage 1 Gate-Source Voltage Transient Drain Current Continuous (Tc =25°C) Vdss VdGR Vgs

358 ez 808

Abstract: G9141 MIL-C-24308 d-sub connectors Molex Micro SAS 393 EZ 639 JWT Connector RJ45 panel mount ZZL-4016-36LD 51psb micro sata connector
Contextual Info: ND3% BASE1 XXXX5216-0809-1-P 809 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 18-07-11 Hour: 16:58 TS:TS date TS time CONNECTORS & ACCESSORIES Find the Newest Technologies Online FLAT/FLEX RIBBON CABLE CONNECTORS PAK20 2mm WIREMOUNT SOCKETS 0.100 x 0.100″ THREE-WALL

IXTH12N50

Contextual Info: I X Y S CORP 1 ÔE D • 4bôb22b GOGGblB <=1 12N45, IXTH12N50, 12N45, IXTM12N50 12 AMPS, 450-500 V, 0.4Q/0.5Q MAXIMUM RATINGS Parameter Sym. Drain-Source Voltage 1 Drain-Gate Voltage (RQS=1.0 MQ) (1) Gate-Source Voltage Continuous Gate-Source Voltage Transient

abb traction motor

Abstract: diode 6.5 kv 5SMY 12M4500 76E-12 IGBT 6500 V 86M1280 5SMY86J1280 ABB IGBT 76J1280 76M12
Contextual Info: IGBT and Diode dies ABB Semiconductors ABB IGBT and Diode dies from stateof-the-art SPT planar technology platform. Fig.1 Un-sawn wafer, sawn wafer die on frame and pick-and-place dies in waffle-packs ABB Semiconductor has a well established reputation in the

EIA 549 Class 130B transformer

Abstract: mcf 300.04 capacitor 225 35k 844 SMD av 1.40.00 mkt x2 .01uf NTC 20K honeywell 1000 rpm dc motor 12v 100watt BO 680Y clarostat POTENTIOMETER 73JA SMD MARKING CODE 503b 03028BR
Contextual Info: ND3% BASE1 XXXX0118-0396-1-P 396 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 20-07-11 Hour: 11:09 TS:TS date TS time CAPACITORS Find Datasheets Online CERAMIC CAPACITORS MULTILAYER CERAMIC CAPACITORS - 0.5pF TO 82,000pF 2 MULTILAYER CERAMIC CAPACITORS - 0.5pF TO 82,000pF CONT.

IXTH15N45A

Contextual Info: 4686226 I X Y S 03 CORP d F | 4 1. f l t=,2 2 1> D D O O E I S 2 |~~ / 3 / " □IXYS TECHNICAL DATA SHEET August 1988 DATA SHEET NO. 1004A IRFC450 High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series V B R D S S - . 500V

equivalent data book of 10N60 mosfet

Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
Contextual Info: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning: