ISOWATT22C Search Results

Contextual Info: / I T SGS-THOMSON Ä 7# RaDeæi[Liero iDei BD533FI BD534FI COMPLEMENTARY SILICON POWER TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD533FI, is a silicon epitaxial-base NPN transistor mounted in ISOWATT22C plastic package. They are inteded for use in medium power linear

Contextual Info: un 7^5^237 0020741 2 • SGS-THOMSON [»[H ] »gC T(g«S 13 BUV46/FI BUV46A/AFI S G S-TH0MS0N 3QE ]> HIGH VOLTAGE POWER SWITCH DESCRIPTION The BUV46/A and BUV46FI/AFI are silicon multiepitaxial mesa NPN transistors in the jedecTO-220 plastic package and ISOWATT22C fully isolated

IRF 260 N

Abstract: transistor IRF 531 IRF 850 transistor 531 IRF 530
Contextual Info: ¿ = 7 IRF 530/FI-531/FI IRF 532/FI-533/FI S G S -T H O M S O N ^ 7 # „ HlOiaiSiiBliaïUCTMMIKcül; N • CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIM INARY DATA TYPE V DSS ^DS on 'd ' IRF530 IRF530FI 100 V 100 V 0.16 n 0.16 n 14 A 9 A IRF531 IRF531FI

TT220

Abstract: transistor t220 BUZ71 dc to ac TT 220
Contextual Info: {ZT SGS-THOMSON BUZ71 ^ 7 # ,. M g[M>g[L[I(g¥[Mg [M(gi_ BUZ71FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS ^DS(on) ^d " BUZ71 BUZ71FI 50 V 50 V 0.1 Q 0.1 0 14 A 12 A • VERY FAST SW ITCHING • LOW DRIVE ENE R G Y FOR EASY DRIVE,

jrf 520

Abstract: irf 44 n schematic diagram UPS 600 Power structure IRF520 irf5205 IRF521 IRF520 application note IRF 520 TRANSISTOR n 522 IRF522
Contextual Info: 3QE P /S T J • 7cjScjg37 QQSTTb? 3 ■ S G S -T H O M S O N ^ D œ iŒ ig T O iO ig i 6^ S-THOMSON TYPE N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS V Dss ^D S on IRF520 IRF520FI IRF521 IRF521FI 100 100 80 80 0.27 Q 0.27 n Id ' 9.2 A 7 A IRF522 IRF522FI

BUT11 equivalent

Abstract: transistor t220 but11 BUT-11 ph but11a BUT11A APPLICATION 11AFI but11fi 7929 BUT11 SGS
Contextual Info: • ? CLSC}B3J 0Q£flb55 0 ■ S C S -T H O M S O N []*[RK»i gïïl(Q M(gS S_G S - T H O M S O N "p3VI?> BUT11 FI B U T 1 1A /A F I _ 3QE J> HIGH VOLTAGE SWITCH DESCRIPTION The BUT11/A and BUT11FI/AFI are silicon miltiepitaxial mesa NPN transistors respectively in Jedec

BD534FI

Abstract: BD533FI
Contextual Info: r z T SGS-THOMSON Ä T # M » IL [Iig M e t BD533FI BD534FI COMPLEMENTARY SILICON POWER TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD533FI, is a silicon epitaxial-base NPN transistor mounted in ISOWATT220 plastic package. They are inteded for use in medium power linear

SOT TO-126 mounting

Contextual Info: HANDLING OF POWER PLASTIC TRANSISTORS PRECAUTIONS FOR PHYSICAL HANDLING OF POWER PLASTIC TRANSISTOR [T 0 -2 2 0 , ISOWATT220, TO-218 SOT-93 , ISOWATT218, TO-126 (SOT-32), SOT-82, SOT-194] When mounting power transistors certain precau­ tions must be taken in operations such as bending

STLT20

Abstract: STLT20FI
Contextual Info: STLT20 STLT20FI SGS-THOMSON N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STLT20 S TLT20FI V dss R ds oü 60 V 60 V 0 .1 5 0 .1 5 n a Id 15 A 10 A . . . . . . . AVALANC HE RUG G EDN ESS TECHNO LO G Y 100% AVALANCHE TESTED REPETITIVE AVALANC HE DATA A T 100°C

STP4N40FI

Abstract: SKs TRANSISTOR STP4N
Contextual Info: SGS-THOMSON iyH£ïï^ sKS STP4N40 STP4N40FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V dss STP4N40 STP4N40FI 400 400 V V R D S (o n Id 2.1 S2 2.1 LI 4 A 3 A . • . . AVALANCHE RUG G EDN ESS TECHNOLO GY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C

STLT20

Abstract: STLT20FI
Contextual Info: f Z 7 STLT20 STLT19 S G S -T H O M S O N ^7# HDËœitLiÊTOOMÊS N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTORS PRELIMINARY DATA TYPE STLT20 STLT20FI STLT19 STLT19FI VDSs 60 V 60 V 50 V 50 V R DS on 0.15 0.15 0.15 0.15 Q Q Q Q 15 10 15

u806

Abstract: u806 diode BU806FI JIS B 0409 BU806
Contextual Info: SGS-THOMSON !LiM iO gS BU806/FI BU807 MEDIUM VOLTAGE NPN FAST SWITCHING DARLINGTON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPES . NPN DARLINGTON . LOW BASE-DRIVE REQUIREMENTS . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATION . HORIZONTAL DEFLECTION FOR

Schematics AL 1450 DV

Abstract: ixc 844 schematic diagram welding inverter STP5N80 845 diode DC/AC to DC smps circuit diagram schematic diagram dc-ac inverter schematic diagram dc-ac welding inverter CIRCUIT STP5N80FI RC50
Contextual Info: _ • 7^2^237 00Mb2öl « V# _ BiSGTH S C S -T H O M S O N [*^ Q [E[L gTi»«S STP5N80 STP5N80FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V STP5N80 S TP5N 80FI ■ . . . . ■ . dss 800 V 800 V RDS(on) Id < 2 0 < 2 n 5 .5 A

A 933 S transistors

Abstract: smps 450W ic F441 SGS transistors F341 f441 to3 HEATSINK SF341 aahp SGSIF341
Contextual Info: • 7^537 005.5177 _H ■ r 3 ._ SCS-THOMSON SGSF341/IF341 I*[hK»[I(OT(2 [*S SGSF441/IF441/F541 S G S - T HO MS ON 30E D FASTSWITCH HOLLOW-EMITTER NPN TRANSISTORS ■ H IG H S W IT C H IN G S P E E D N P N P O W E R TRANSISTO RS ■ HOLLOW EMITTER FOR FAST SW ITCHING

TT220

Abstract: TP15N05L
Contextual Info: SGS-THOMSON ^ 7/L MTP15N05L/FI MTP15N06L/FI RfflD [s3©[ilLl gTI[SΩlÎ!!lDÊi N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTORS PRELIMINARY DATA TYPE V DSS ^D S(on MTP15N05L MTP15N05LFI 50 V 50 V 0.15 fi 0.15 Q 15 A 10 A MTP15N06L MTP15N06LFI

Contextual Info: 7 ^ 3 3 7 004k3Bb bbS • SGTH *57 SGS-THOMSON :LI gïï^(s MDOi STP7N20 STP7N20FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP7N20 STP7N20FI V dss R d S ( o ii ) Id 200 V 200 V < 0.65 n < 0.65 a 7A 4A ■ TYPICAL RDS(on) = 0.55 £2 AVALANCHE RUGGED TECHNOLOGY

BUZ80AF

Abstract: BUZ80A BUZ80AFI
Contextual Info: BUZ80A BUZ80AFI SGS-THOMSON Z T ê N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V d ss FtDS on Id BUZ80A 800 V 3 Ü 3.8 A BUZ80AFI 800 V 3 Li 2.4 A . . . . . . AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C

MTP3N6

Contextual Info: r r z S G S -T H O M S O N *7# » » E tL ie T O K f ! MTP3N60 MTP3N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIMINARY DATA TYPE V DSS ^D S on M TP3N60 M TP3N60FI 600 V 600 V 2.5 ß 2.5 Q 3 A 2.5 A • HIGH VO LTAG E FOR OFF-LINE APPLICATIO NS

n52a

Abstract: STVHD90FI STVHD90
Contextual Info: SGSTHOMSON STVHD90 STVHD90FI IL D N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V dss STVHD90 STVHD90FI 50 V 50 V R d S ofi 0.023 U 0.023 n Id 52 A 29 A . . . . . . AVALAN C H E RUG G EDN ESS TECHNO LO G Y 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C

STP6N50

Abstract: STP6N50FI T0125 T04 transistor
Contextual Info: G7â I ISGTH 7 “12*1237 0 0 4 b 3 1 2 STP6N50 STP6N50FI S C S -m O M S O N [L[l ïï[HMO gS N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP6N50 STP6N 50FI . • . . ■ V dss RüS(on Id 500 V 500 V < 1 .1 0 < 1.1 i l 6 A 3.8 A TYPICAL RDs(on) = 0.93 £2

.2TY

Abstract: gc224 1N239
Contextual Info: t r i SGS-THOMSON IRF840/FI IRF841/FI ¡L[iOT 2 iQ(gS N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE R d S(o ii ) Id IR F 8 4 0 IR F 8 4 0 F I 500 V 500 V 0 .8 5 a 0 .8 5 Q 8 A 4 .5 A IR F841 IR F 8 4 1 F I 450 V 450 V 0 .8 5 a 0 .8 5 L i 8 A 4 .5 A

7WE37

Abstract: L0250 STP40N06 STP40N06FI V1068
Contextual Info: 7TETE37 QQ4hM7b Q7*\ » S f i T H STP40N06 STP40N06FI ¡ ñ l SGS-THOMSON ilLiOT «! N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V STP40N06 STP40N 06FI R oS o n Id < 0.035 n < 0.035 n 40 A 23 A dss 60 V 60 V . Q . TYPICAL RDS(on) = 0.03 AVALANCHE RUGGED TECHNOLOGY

TP3055A

Contextual Info: 3DE » _ • 7121537 0021005 1 B T - ^ . d rz j SGS-THOMSON ^7# G*MiHi graRl(gS S G S-TH0MS0N TYPE MTP3055A MTP3055AFI V DSS 60 V 60 V MTP3055A MTP3055AFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS ^DS(on 0.15 Q 0.15 ß ■ 'd 12 A 10 A • ULTRA FAST SWITCHING - UP TO > 100KHz

SGSF32

Abstract: transistor f421 F421 Transistor
Contextual Info: 7 T 2 T B 3 7 o o a ' î i s a i m SGSF321/IF321 SGSF421/IF421 SGS-THOMSON [i$ 0 g ^ ( 5 i[ L [ i( g T O ( M ( g S S G S-THOMSON 3GE » FASTSWITCH HOLLOW-EMITTER NPN TRANSISTORS • HIG H SW IT C H IN G SPEED NPN PO W ER ­ TRANSISTORS ■ HOLLOW EMITTER TECHNOLOGY