IS21I2 Search Results

Contextual Info: BGA622 1.4 - 6 GHz SiGe LNA ES: NOW WS DS M 1 26.04.2002 Page 1 Vcc = 2.7V, Symbol IS21I2 NF P-1dB IIP3 Id MP: 05/02 Features SOT343 Applications 50Ω matched - no external components required NE W MMIC UMTS / CDMA • GSM / TDMA / EDGE • GPS / ISM • Bluetooth

Contextual Info: SIEMENS Si-M M IC-Am plifier BGA 425 in SIEGET 25-Technologie Preliminary data • Multifunctional ease. 50 Cl block LNA / MIX • Unconditionally stable • Gain IS2-|I2 = 18.5 dB at 1.8 GHz (appl.1) gain IS21I2 = 22 dB at 1.8 GHz (appl.2) /p3out = +7 dBm at 1 8 GHz ( ^D=3V,/D=9.5mA)

Contextual Info: SIE M E N S BGA318 Silicon Bipolar MMIC-Amplifier Preliminary Data • • • • • Cascadable 50 Q-Gain Block 16 dB typical Gain at 1.0 GH2 12 dBm typical P.1dB at 1.0 GHz 3 dB-Bandwidth: DC to 1.2 GHz Plastic Package Type Marking Ordering Code 8-mm taped

721f

Abstract: ci 7445 TLP421 TLP 7445 TLP521 TLP521 SOP tlp421-4 TA4011FU TA4016AFE TLP621
Contextual Info: 東芝半導体情報誌アイ 2000 1･2月号 発行/（株）東芝 セミコンダクター社 電子デバイス営業事業部 営業企画部 TEL. 03-3457-3453 FAX. 03-5444-9431 eye 2000年1･2 u c to r 月号 d n co i Vo m l.9 Se 1 CONTENTS INFORMATION

Contextual Info: Thai H E W L E T T mLKM P A C K A R D Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0520 Features • C ascadable 5 0 Q Gain B lock • High O utput Power: +23 dBm Typical Pj dB at 1.0 GHz • Low D istortion : 33 dBm Typical IP3 at 1.0 GHz

Contextual Info: data sheet O avantek MGA-66100 2-6 GHz Cascadable GaAs MMIC Amplifier December, 1989 Avantek Chip Outline Features • • • • Cascadable 50 Q Gain Block Broadband Performance: 2-6 GHz 12.5 dB typical Gain + 1.0 dB Gain Flatness 13.0 dBm Pi dB Single Supply Bias

Contextual Info: » i emveir P roduct S p ec ifica tio n s M a y 1994 1 CFC0301 Series Medium Power GaAs FETs of 2 Features □ High Gain □ +23 dBm Power Output □ Ion Implanted Material □ 100 Mil Stripline Flange Package C Package Diagram 1.6 *0.1 DIA 0.6 - 1.0 2.5 MAX

2493 transistor

Abstract: marking 9721 IC 7109
Contextual Info: TO SH IBA MT3S04AT TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE MT3S04AT VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm 1.2 ± 0 .0 5 0.8 ± 0.05 Low Noise Figure : NF = 1.2 dB at f = 1 GHz TT irrV » fio in JJlg ll V ^ U lll

FSX51WF

Abstract: FSX51
Contextual Info: FSX51WF General Purpose GaAs FETs ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Item Condition Symbol Rating Unit Drain-Source Voltage Vd S 12 V Gate-Source Voltage Vg S -5 V Total Power Dissipation Ptot 1 .0 w Storage Temperature T stg -65 t o +175

Contextual Info: 1 W h ß tHEWLETT* miti» P AC KA R D 3.0 GHz Low Noise Silicon MMIC Amplifier Technical Data INA-54063 Features Surface Mount Package SOT-363 SC-70 Applications Pin Connections and Package Marking • • • • • • Ultra-Miniature Package Single 5 V Supply (29 mA)

rx 3152

Abstract: A1306 2Q394 IC LP7 A-1306 500R BFP405 BGC405 Q62702-G0091 RX82 equivalent
Contextual Info: BGC405 Self-Biased BFP405 l l l l l SIEGET25- Technology Small SCT598-Package Control Pin For Switching The Device Off Current Easy Adjustable By An External Resistor Voltage Independent Current 2V – 4.5V 8 7 6 5 2 1 3 4 VPW05982 ESD: Electrostatic discharge sensitive device, observe

Contextual Info: N AUER P H IL IP S /D IS C R E T E bTE D bb53R31 DD325T1 257 H A P X Philips Semiconductors Preliminary specification Wideband amplifier module OM2083/86 DESCRIPTION A three-stage wideband amplifier in hybrid integrated circuit form on a thin-film substrate. The device is intended for use

4447 surface mounted diode

Abstract: MGA-82563
Contextual Info: Who m L'tiI M HEWLETT PACKARD 0 .1 -6 GHz 3 V, 17 dBm Amplifier Technical Data MGA-82563 F ea tu res • +17.3 dBm Px dB at 2.0 GHz Surface M ount Package SOT-363 S C -70 +20 dBm Psat at 2.0 GHz • Single +3V Supply • 2.2 dB N oise Figure at 2.0 GHz • 13.2 dB Gain at 2.0 GHz

Contextual Info: Tfw% H E W L E T T mLfíM P A C K A R D Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0504 Features • Cascadable 50 i Gain Block • High Output Power: 18.0 dBm Typical Pj dB at 1.0 GHz • Low Distortion: 29.0 dBm Typical IP3 at 1.0 GHz

Motorola transistors MRF 947

Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that

vHF amplifier module

Abstract: philips if catv amplifier wideband amplifier philips ferrite material specifications
Contextual Info: N AUER PHILIPS/DISCRETE b'ïE D ^ 5 3 ^ 3 1 DDBSS'ìl 257 H A P X Philips Semiconductors Preliminary specification Wideband amplifier module OM2Q83/86 DESCRIPTION A three-stage wideband amplifier in hybrid integrated circuit form on a thin-film substrate. The device is intended for use

MSA806

Abstract: msa80 philips Q 522 philips if catv amplifier
Contextual Info: N AMER PHI LI PS/DISCRE TE b^E D • bbSB^l D0325bb GT1 ■ APX P hilips S em iconductors Prelim inary specification Wideband amplifier module OM2082/60 DESCRIPTION A two-stage wideband amplifier in hybrid integrated circuit form on a thin-film substrate. The device is intended for use

Contextual Info: SIEMENS BGA 420 Si-MMIC-Amplifier in SIEGET 25-Technologie Preliminary data • Cascadable 50 Q-gain block • Unconditionally stable • Gain IS2 1 12 = 13 dB at 1.8 GHz /P3out = +9 dBm at 1.8 GHz \/D = 3 V, /D = typ. 6.4 mA • Noise figure NF= 2.2 dB at 1.8 GHz

Contextual Info: BFG 19S SIEMENS NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers In antenna and telecommunications system s up to 1,5GHz at collector currents from 10 mA to 70 mA • C EC C -typ e available: C E C C 50 002/259 E S P : Electrostatic discharge sensitive device, observe handling precaution!

IC AT 6884

Abstract: T79 SOT 23
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR NE662M04 FEATURES • HIGH GAIN BANDWIDTH: fT = 23 GHz • LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 20 dB at f = 2 GHz • NEW LOW PROFILE M04 PACKAGE: • SOT-343 footprint, with a height of just 0.59 mm

Contextual Info: MOTOROLA SC XSTRS/R F MOTOROLA 4bE D • b3b?254 OOlSOfi? 3 I noTb r - 3 \~ J .$ SE M IC O N D U C T O R TECHNICAL DATA MRFQ19 The RF Line DIE SOURCE SAME AS BFQ19 N P N S ilic o n H ig h F re q u e n cy T r a n s isto r iC m ISO mA SURFACE MOUNT HIGH FREQUENCY

transistor MRF 254

Abstract: MRF561 Motorola transistors M 724 MRF560 724 motorola NPN Transistor R/High frequency MRF transistor case 317-01 317A-01 High frequency MRF transistor k 724
Contextual Info: MOTOROLA SC -CXSTRS/R 34 F> DËJfa3fci7SS4 □D41Dflb b | _ T ' l t - t l MRF560 MRF561 MRF562 MRF563 MRFC592 The R F Line A d v a n c e Information NPN SILICON HIGH FREQUENCY TRANSISTORS The MRF560 series transistors use the same state-of-the art microwave transistor chip which features fine-line geometry, ionimplanted arsenic emitters and gold top metalization. These tran­

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon H igh-Frequency Transistor . . . designed for UHF linear and large-signal amplifier applications. • Specified 12.5 Volt, 870 MHz Characteristics — Output Power = 0.5 Watts Minimum Gain = 8.0 dB

0 258 007 033

Abstract: Transistor 2274
Contextual Info: MPS536 CASE 29-04, STYLE 2 TO-92 TO-226AA M A XIM U M RATINGS Symbol MPS536 Unit Collector-Emitter Voltage VCEO -1 0 Vdc Collector-Base Voltage VCBO -1 5 Vdc Vdc Rating Emitter-Base Voltage HIGH FREQUENCY TRANSISTOR Ve b o -4 .5 Collector Current — Continuous