MT3S04AT Search Results

2493 transistor

Abstract: marking 9721 IC 7109
Contextual Info: TO SH IBA MT3S04AT TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE MT3S04AT VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm 1.2 ± 0 .0 5 0.8 ± 0.05 Low Noise Figure : NF = 1.2 dB at f = 1 GHz TT irrV » fio in JJlg ll V ^ U lll

EG 8010

Abstract: transistor 9018 NPN
Contextual Info: MT3S04AT Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S04AT VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.2dB at f = 1 GHz • High gain: gain = 12.5dB (at f = 1 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: MT6L57AFS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L57AFS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 TESM fSM mold products Q2 MT3S06T MT3S04AT (MT3S06FS) (MT3S04AFS) Maximum Ratings (Ta = 25°C) fS6 Characteristic

014E

Abstract: 200E 800E MT3S04AT 7880e13 5810E
Contextual Info: MT3S04AT SPICE parameters UCB SPICE2G6 20020225 NET LIST .SUBCKT Re1 Re2 Le1 Le2 Ceg1 Ceg2 Rb1 Rb2 Lb1 Lb2 Cbg1 Cbg2 Rc1 Rc2 Lc1 Lc2 Ccg1 Ccg2 Cbe1 Cbc1 Cce1 Cbe2 Le3 Re3 Lb3 Rb3 Cbe3 Cce2 Cbc2 MT3S04AT 3 18 9 19 6 18 6 19 6 0 9 0 2 15 8 16 5 15 5 16 5 0

4317 0215 transistor

Abstract: MT3S04AT IB 6415
Contextual Info: MT3S04AT Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S04AT VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.2dB at f = 1 GHz • High gain: gain = 12.5dB (at f = 1 GHz) Unit: mm Maximum Ratings (Ta = 25°C)

toshiba 5564

Abstract: 6922 EH 4317 0215 transistor MT3S04AT NPN Silicon Epitaxial Planar Transistor 9018 9018 transistor
Contextual Info: TO SH IBA MT3S04AT TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE MT3S04AT VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm 1.2 ±0 .0 5 • Low Noise Figure : NF = 1.2 dB at f = 1 GHz * High Gain 0.8 ± 0.05 MAXIMUM RATINGS (Ta = 25°C)

NPN Silicon Epitaxial Planar Transistor 9018

Abstract: MT3S04AT
Contextual Info: MT3S04AT Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S04AT VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.2dB at f = 1 GHz • High gain: gain = 12.5dB (at f = 1 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C)

IC 14049

Abstract: MT3S04AT ic 8853 IB 6415 IC 7306
Contextual Info: MT3S04AT 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 MT3S04AT ○ VHF~UHF 帯低電圧動作•低位相雑音タイプ • 雑音特性が優れています。: NF = 1.2dB, |S21e |2 単位: mm = 12.5dB f = 1 GHz 絶対最大定格 (Ta = 25°C)

MT3S04AFS

Abstract: MT3S04AT MT3S06FS MT3S06T MT6L57AFS
Contextual Info: MT6L57AFS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L57AFS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 MT3S06T MT3S04AT MT3S06FS (MT3S04AFS) Corresponding three-pin products: TESM(fSM) mold products 2 5 3 4 0.1±0.05

Contextual Info: MT6L50AT TO SH IBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6L50AT Unit in mm VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • TWO devices are built in to the super-thin and ultra super mini 6 pins package : TU6 2.1 ± 0.1 MOUNTED DEVICES

Contextual Info: T O S H IB A MT6L52AE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6L52AE Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • TWO devices are built in to the super-thin and extreme super mini 6 pins package : ES6 in O o MOUNTED DEVICES

Contextual Info: M T6L04AE TO SH IBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6L04AE Unit in mm VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • TWO devices are built in to the super-thin and extreme super mini 6 pins package : ES6 MOUNTED DEVICES 5 B-

Contextual Info: T O S H IB A MT6L52AE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6L52AE Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • TWO devices are built in to the super-thin and extreme super mini 6 pins package : ES6 in O o MOUNTED DEVICES

2SC5256

Abstract: MT3S04AS MT3S04AT MT6L50AT
Contextual Info: MT6L50AT TO SH IBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6L50AT VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Unit in mm TWO devices are built in to the super-thin and ultra super mini 6 pins package : TU6 2.1 ± 0.1 MOUNTED DEVICES

MT3S04AS

Abstract: MT3S04AT MT6L04AT
Contextual Info: TO SH IBA MT6L04AT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6L04AT Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Two devices are built in to the super-thin and ultra super mini 6 pins package : TU6 2.1 ± 0.1 MOUNTED DEVICES

MT3S04AS

Abstract: MT3S04AT MT6L04AE
Contextual Info: TO SH IBA MT6L04AE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6L04AE Unit in mm VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Two devices are built in to the super-thin and extreme super mini 6 pins package : ES6 5 MOUNTED DEVICES B- Q1/Q2 : SSM (TESM)

MT3S04AS

Abstract: MT3S04AT MT6C04AE
Contextual Info: MT6C04AE TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6C04AE VHF~UHF Band Low Noise Amplifier Applications Unit: mm • Two devices are built in to the super-thin and extreme super mini 6 pins package: ES6 Mounted Devices Q1/Q2: SSM (TESM) Three-pins (SSM/TESM) mold products are

MT3S04AS

Abstract: MT3S04AT MT3S06S MT3S06T MT6L57AE
Contextual Info: MT6L57AE TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L57AE VHF~UHF Band Low Noise Amplifier Applications • Unit: mm Two devices are built in to the super-thin and extreme super mini 6 pins package: ES6 Mounted Devices Q1: SSM (TESM) Three-pins (SSM/TESM) mold

Contextual Info: MT6L04AE TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L04AE VHF~UHF Band Low Noise Amplifier Applications • Unit: mm Two devices are built in to the super-thin and extreme super mini 6 pins package: ES6 Mounted Devices Q1/Q2: SSM (TESM) Three-pins (SSM/TESM) mold products are

Contextual Info: MT6L57AE TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L57AE VHF~UHF Band Low Noise Amplifier Applications • Unit: mm Two devices are built in to the super-thin and extreme super mini 6 pins package: ES6 Mounted Devices Q1: SSM (TESM) Three-pins (SSM/TESM) mold

Contextual Info: MT6C04AE TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6C04AE VHF~UHF Band Low Noise Amplifier Applications Unit: mm • Two devices are built in to the super-thin and extreme super mini 6 pins package: ES6 Mounted Devices Q1/Q2: SSM (TESM) Three-pins (SSM/TESM) mold products are

Contextual Info: MT6L52AE TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L52AE VHF~UHF Band Low Noise Amplifier Applications • Unit: mm Two devices are built in to the super-thin and extreme super mini 6 pins package: ES6 Mounted Devices Three-pins (SSM/TESM) mold

Contextual Info: MT6L57AFS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L57AFS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 1.0±0.05 Lead Pb -free. 0.7±0.05 Superior noise characteristics Superior performance in buffer and oscillator applications.

MT6P04AT

Contextual Info: MT6P04AT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6P04AT VHF~UHF Band Low Noise Amplifier Applications • Unit: mm Two devices are built in to the super-thin and ultra super mini 6 pins package: TU6 Mounted Devices Q1/Q2: SSM (TESM) Three-pins (SSM/TESM) mold products are