FSX51WF
Abstract: FSX51
Contextual Info: FSX51WF General Purpose GaAs FETs ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Item Condition Symbol Rating Unit Drain-Source Voltage Vd S 12 V Gate-Source Voltage Vg S -5 V Total Power Dissipation Ptot 1 .0 w Storage Temperature T stg -65 t o +175
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FSC11LF
Abstract: FSX52WF FSC10LF FT6022D FSX51WF FT6012D FT6110D FT6046 FT6021D ft6021
Contextual Info: - 140 - :1 f m g FSCIOLF it S ± ii FSCIOX FSC11FA/LG Ä ±ü§ ffl € fr & m ¡s 4 % 1 V* K V * fg "Æ Vg s * X * * (V) 1* (A) % m [ P d /P c h (max) * * m (A) Vg s (V) tt n (Ta=25'C) V g s (c ff) (min) (max) Vd s (V) (V) (V) I ds s (min) (max) V d s
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FMC141401-02
Abstract: fujitsu gaas marking code Fujitsu K022 FLL300-2 FLL55 FSX52WF FUJITSU L101 fujitsu x51 FLL200-2 FLL300-1
Contextual Info: APPLICATION NOTES I. PACKAGED FETS and MODULES A. HANDLING PREECAUTIONS GaAs FETS are sensitive to electrostatic discharge. Fujitsu ships all GaAs FETs in electrostatic protection packaging. User must pay careful attention to the following precautions when taking
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fmc141401-02fujitsu gaas marking codefujitsu k022fll300-2+6fll55fsx52wffujitsu l101fujitsu x51fll200-2fll300-1
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FSX52WF
Abstract: GaAs HEMTs X band FSX017LG FHX05LG fhx06lg FSU01LG
Contextual Info: LOW NOISE HEMTs Electrical Characteristics Ta = 25°C NF TYP. (dB) Gas TYP. (dB) f (GHz) VDS (V) •os (mA) Package Type Frequency Band FHC40LG* 0.30 15.5 4 2 10 LG/LP C FHX13LG* 0.45 12.5 12 2 10 LG/LP FHX14LG* 0.60 12.5 12 2 10 LG/LP FHX04LG* 0.75 10.5
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FSX52WF
Abstract: fujitsu "application notes" fsx51wf NF037 FMC141401-02 FLL101 fll171 FMC1414P1-02 FLL55 FLL120MK
Contextual Info: APPLICATICI NOTES IV. DESIGN SUGGESTIONS A. RECOMMENDED DEVICE LINE-UPS This section contains recommended line-ups of Fujitsu Semiconductor devices for amplifier applications in common frequency bands. The continuity of these line-ups has been checked using minimum values of
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