TA4016AFE Search Results

TA4016AFE

Contextual Info: TO SH IBA TA4016AFE TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT T A 4 1 6 A SILICON MONOLITHIC F E UHF WIDE BAND AMPLIFIER APPLICATIONS FEATURES • Low Current : l x = 6 mA • Wide Band : f = 3.2 GHz (3dB down • Operating Supply Voltage : V q q = 1.8 ~ 3 .2 V

Contextual Info: TO SH IBA TA4016AFE TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT T A 4 1 6 A SILICON MONOLITHIC F E UHF WIDE BAND AMPLIFIER APPLICATIONS FEATURES • Low Current : l x = 6 mA • Wide Band : f = 3.2 GHz (3dB down • Operating Supply Voltage : V q q = 1 .5 ~ 3 V

Contextual Info: TOSHIBA TA4016AFE TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT T A 4 1 6 A SILICON MONOLITHIC F E UHF WIDE BAND AMPLIFIER APPLICATIONS FEATURES • Low Current : l x = 6 mA • W ide Band : f = 3.2 GHz (3dB down • Operating Supply Voltage : V q q = 1.8~3.2V

TA4016AFE

Abstract: Ta4016
Contextual Info: TO SH IBA TA4016AFE TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT T A 4 1 6 A SILICON MONOLITHIC F E UHF WIDE BAND AMPLIFIER APPLICATIONS FEATURES • Low Current : l x = 6 mA • Wide Band : f = 3.2 GHz (3dB down • Operating Supply Voltage : V q q = 1 .8 ~ 3 V

TA4016AFE

Contextual Info: TA4016AFE TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4016AFE UHF Wide Band Amplifier Applications Features • Low current: ICC = 6 mA · Wide band: f = 3.2 GHz 3dB down · Operating supply voltage: VCC = 1.8~3.2 V Weight: 0.003 g (typ.)

721f

Abstract: ci 7445 TLP421 TLP 7445 TLP521 TLP521 SOP tlp421-4 TA4011FU TA4016AFE TLP621
Contextual Info: 東芝半導体情報誌アイ 2000 1･2月号 発行/（株）東芝 セミコンダクター社 電子デバイス営業事業部 営業企画部 TEL. 03-3457-3453 FAX. 03-5444-9431 eye 2000年1･2 u c to r 月号 d n co i Vo m l.9 Se 1 CONTENTS INFORMATION

TB62501F

Abstract: TB62207BFG tb62506fg TA1319AP 10 Segment Displays tb62506 tb62501 TB62207 TB62503 TA78033LS
Contextual Info: General-Purpose Linear ICs Operational Amplifier ICs & Comparator ICs z 118 Intelligent Power Devices IPDs z 121 Interface Drivers z 124 Motor Drivers z 129 Power Supply ICs z 132 Small-Signal MMICs (Radio-Frequency Cell Packs) z 141 117 Operational Amplifier ICs (Op Amp ICs) & Comparator ICs

TOSHIBA RF Power Module S-AV24

Abstract: diode varicap BB 112 varicap v147 2SC386A 2SK1310 3SK78 2sc5066 V101 varicap diode 1SV149 2SK192
Contextual Info: 高周波用半導体デバイス ダイオード編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製

3SK73

Abstract: S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL diode varicap BB 112 2SC2328 3SK112
Contextual Info: 高周波用半導体デバイス パワーデバイス編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製

TB62501F

Abstract: tb62501 tb6808f TA78033LS TA1319AP TB62207BFG TD62C854AF ta1319 TA7804LS TB62207
Contextual Info: General-Purpose Linear ICs Operational Amplifier ICs & Comparator ICs z 118 Intelligent Power Devices IPD z 122 Interface Drivers z 125 Motor Drivers z 130 Power Supply ICs z 134 Small-Signal MMICs (High-Frequency Cell-pack) z 142 117 Operational Amplifier ICs & Comparator ICs

BB 505 Varicap Diode

Abstract: s-av24 V101 varicap diode varicap v101 varicap v147 varicap v103 replacement for 2sc5088 horizontal transistors TOSHIBA S-AV29H Zener c9v 3SK114
Contextual Info: Radio-Frequency Semiconductors Diodes Semiconductor Company The information contained herein is subject to change without notice. 021023_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent

FET K161

Abstract: S-AV24 k192a Transistor C1923 C1923 transistor k161 jfet fet k241 k161 mosfet C1923 transistor base c2498 TRANSISTOR
Contextual Info: Radio-Frequency Semiconductors Transistors, FETs, Cell Packs Semiconductor Company The information contained herein is subject to change without notice. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or

FET K161

Abstract: Transistor C2216 Transistor k161 k161 jfet k192a Transistor C2668 fet k241 k161 mosfet Transistor C2347 Transistor C1923
Contextual Info: 高周波用半導体デバイス トランジスタ・FET・セルパック編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製

2sc5088 horizontal transistors

Abstract: S-AV36 2SK192 mosfet data 3SK121 equivalent S-AV32 3SK121 fet 2SC2879 CB LINEAR CIRCUIT replacement for 2sc5088 horizontal transistors 3SK73 equivalent transistor 2sc2509
Contextual Info: High-Frequency Semiconductors Power Devices Semiconductor Company The information contained herein is subject to change without notice. 021023_D The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or