TG2214S Search Results

Contextual Info: TG2214S TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic TG2214S RF SPDT Switch Unit: mm Antenna switch for Bluetooth class 2, 3 Diversity antenna switching Filter switching for mobile communication Local signal switching Features • Low insertion Loss: LOSS = 0.35dB typ. @1.0 GHz

TG2214S

Contextual Info: TG2214S TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic TG2214S RF SPDT Switch Unit: mm Antenna switch for Bluetooth class 2, 3 Diversity antenna switching Filter switching for mobile communication Local signal switching Features • Low insertion Loss: LOSS = 0.35dB typ. @1.0 GHz

antenna diversity switch

Abstract: TG2214S
Contextual Info: TG2214S TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic TG2214S RF SPDT Switch Unit: mm Antenna switch for Bluetooth class 2, 3 Diversity antenna switching Filter switching for mobile communication Local signal switching Features • Low insertion Loss: LOSS = 0.35dB typ. @1.0 GHz

TB62501F

Abstract: TB62207BFG tb62506fg TA1319AP 10 Segment Displays tb62506 tb62501 TB62207 TB62503 TA78033LS
Contextual Info: General-Purpose Linear ICs Operational Amplifier ICs & Comparator ICs z 118 Intelligent Power Devices IPDs z 121 Interface Drivers z 124 Motor Drivers z 129 Power Supply ICs z 132 Small-Signal MMICs (Radio-Frequency Cell Packs) z 141 117 Operational Amplifier ICs (Op Amp ICs) & Comparator ICs

TOSHIBA RF Power Module S-AV24

Abstract: diode varicap BB 112 varicap v147 2SC386A 2SK1310 3SK78 2sc5066 V101 varicap diode 1SV149 2SK192
Contextual Info: 高周波用半導体デバイス ダイオード編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製

MIG20J503L

Abstract: LNA bluetooth TC59LM818DMB TG2210FT TG2211FT TG2213S TG2214S TG2216TU mig20j503h MIG15J503L
Contextual Info: 東芝半導体情報誌アイ 2002年12月号 II N N FF O O RR M M AA TT II O ON N 1 米国サンディスクと90ナノメートルNAND型 フラッシュメモリ・プロセス技術を共同開発 4Gb NAND型フラッシュメモリも開発 当社はNAND型フラッシュメモリの供給能力増大と競争力強化を図るため、

3SK73

Abstract: S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL diode varicap BB 112 2SC2328 3SK112
Contextual Info: 高周波用半導体デバイス パワーデバイス編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製

TB62501F

Abstract: tb62501 tb6808f TA78033LS TA1319AP TB62207BFG TD62C854AF ta1319 TA7804LS TB62207
Contextual Info: General-Purpose Linear ICs Operational Amplifier ICs & Comparator ICs z 118 Intelligent Power Devices IPD z 122 Interface Drivers z 125 Motor Drivers z 130 Power Supply ICs z 134 Small-Signal MMICs (High-Frequency Cell-pack) z 142 117 Operational Amplifier ICs & Comparator ICs

BB 505 Varicap Diode

Abstract: s-av24 V101 varicap diode varicap v101 varicap v147 varicap v103 replacement for 2sc5088 horizontal transistors TOSHIBA S-AV29H Zener c9v 3SK114
Contextual Info: Radio-Frequency Semiconductors Diodes Semiconductor Company The information contained herein is subject to change without notice. 021023_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent

FET K161

Abstract: S-AV24 k192a Transistor C1923 C1923 transistor k161 jfet fet k241 k161 mosfet C1923 transistor base c2498 TRANSISTOR
Contextual Info: Radio-Frequency Semiconductors Transistors, FETs, Cell Packs Semiconductor Company The information contained herein is subject to change without notice. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or

FET K161

Abstract: Transistor C2216 Transistor k161 k161 jfet k192a Transistor C2668 fet k241 k161 mosfet Transistor C2347 Transistor C1923
Contextual Info: 高周波用半導体デバイス トランジスタ・FET・セルパック編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製

2sc5088 horizontal transistors

Abstract: S-AV36 2SK192 mosfet data 3SK121 equivalent S-AV32 3SK121 fet 2SC2879 CB LINEAR CIRCUIT replacement for 2sc5088 horizontal transistors 3SK73 equivalent transistor 2sc2509
Contextual Info: High-Frequency Semiconductors Power Devices Semiconductor Company The information contained herein is subject to change without notice. 021023_D The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or