VHF TV BROADCAST TRANSMITTER
Abstract: 2SK1310 2SK1310A 2SK131 2-22C2A
Contextual Info: 2SK1310A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK1310A RF POWER MOS FET for VHF TV BROADCAST TRANSMITTER Unit in mm l Output Power : Po ≥ 190 W Min. l Drain Efficiency : ηD = 65% (Typ.) l Frequency : f = 230 MHz l Push−Pull Structure Package
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2sk1310
Contextual Info: 2SK1310A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK1310A RF POWER MOS FET for VHF TV BROADCAST TRANSMITTER Unit in mm Output Power : Po ≥ 190 W Min. Drain Efficiency : ηD = 65% (Typ.) Frequency : f = 230 MHz Push−Pull Structure Package
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VHF TV BROADCAST TRANSMITTER
Abstract: 200 pF air variable capacitor variable capacitor trimmer Q TRIMMER capacitor 2SK131 2SK1310A L4 toshiba mica trimmer capacitor
Contextual Info: TOSHIBA 2SK1310A 2 S K 1 3 1 OA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE RF POWER MOS FET for VHF TV BROADCAST TRANSMITTER Output Power Po ^ 190 W Min. Drain Efficiency 7D = 65% (Typ.) f = 230 MHz Frequency Push - Pull Structure Package
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2sk1310avhf tv broadcast transmitter200 pf air variable capacitorvariable capacitor trimmer q+4trimmer capacitor2sk131l4 toshibamica trimmer capacitor
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2SK1310
Abstract: 2SK1310A
Contextual Info: 2SK1310A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK1310A RF POWER MOS FET for VHF TV BROADCAST TRANSMITTER Unit in mm Output Power : Po ≥ 190 W Min. Drain Efficiency : ηD = 65% (Typ.) Frequency : f = 230 MHz Push−Pull Structure Package
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2SK1310A
Abstract: 2SK1310
Contextual Info: 2SK1310A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK1310A RF POWER MOS FET for VHF TV BROADCAST TRANSMITTER Unit in mm z Output Power : Po ≥ 190 W Min. z Drain Efficiency : ηD = 65% (Typ.) z Frequency : f = 230 MHz z Push−Pull Structure Package
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sec 2sc5088
Abstract: samsung UHF/VHF TV Tuner 2SC5066 datasheet RF Bipolar Transistor transistor 2SC5066 2SC5088 SEC MT6L04AE MT4S200T AU82 MT6L63FS
Contextual Info: 2007-9 PRODUCT GUIDE Radio-Frequency Semiconductors Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors, diodes and
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bce0003ds-167bce0003esec 2sc5088+9samsung uhf/vhf tv tuner2sc5066 datasheetrf bipolar transistortransistor 2sc50662sc5088 secmt6l04aemt4s200tau82mt6l63fs
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TOSHIBA RF Power Module S-AV24
Abstract: diode varicap BB 112 varicap v147 2SC386A 2SK1310 3SK78 2sc5066 V101 varicap diode 1SV149 2SK192
Contextual Info: 高周波用半導体デバイス ダイオード編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製
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050106dad13sk1143sk126s1255+152sc2644s-av243sk1153sk291s1256toshiba rf power module s-av24diode varicap bb 112varicap v1472sc386a2sk13103sk782sc5066v101 varicap diode1sv1492sk192
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3SK73
Abstract: S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL diode varicap BB 112 2SC2328 3SK112
Contextual Info: 高周波用半導体デバイス パワーデバイス編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製
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050106dad13sk1143sk126s1255+132sc2644s-av243sk1153sk291s12563sk733sk121toshiba rf power module s-av243sk101s-au82vldiode varicap bb 1122sc23283sk112
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S-AV17
Abstract: 2SC2879 2SK3075 s-av6 quality FM TRANSMITTER 2SK1310 TOSHIBA RF Power Module S-AV17 S-AU80 2SK2854 2SK3079
Contextual Info: RF Power Devices PRODUCT GUIDE • Selection Guide for RF Power Transistors Package PO W ø 12.7 10PEP 20PEP HF 30 MHz 60PEP 2SC2290 100PEP 2SC2879 150PEP 2SC2510* * : VCC = 28 V Package PO (W) ø 12.7 6 28 VHF 175 MHz 32 80 4 2SC2782 ■ Main Characteristics of RF Power Transistors
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10pep20pep60pep2sc2290+14100pep2sc2879150pep2sc25102sc2782s-av172sk3075s-av6quality fm transmitter2sk1310toshiba rf power module s-av17s-au802sk28542sk3079
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BB 505 Varicap Diode
Abstract: s-av24 V101 varicap diode varicap v101 varicap v147 varicap v103 replacement for 2sc5088 horizontal transistors TOSHIBA S-AV29H Zener c9v 3SK114
Contextual Info: Radio-Frequency Semiconductors Diodes Semiconductor Company The information contained herein is subject to change without notice. 021023_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
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3sk1143sk126s12552sc2644+13s-av243sk1153sk291s1256s-av26hbb 505 varicap diodev101 varicap diodevaricap v101varicap v147varicap v103replacement for 2sc5088 horizontal transistorstoshiba s-av29hzener c9v
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FET K161
Abstract: S-AV24 k192a Transistor C1923 C1923 transistor k161 jfet fet k241 k161 mosfet C1923 transistor base c2498 TRANSISTOR
Contextual Info: Radio-Frequency Semiconductors Transistors, FETs, Cell Packs Semiconductor Company The information contained herein is subject to change without notice. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or
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3sk1143sk126s12552sc2644+14s-av243sk1153sk291s1256s-av26hfet k161k192atransistor c1923c1923 transistork161 jfetfet k241k161 mosfetc1923 transistor basec2498 transistor
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FET K161
Abstract: Transistor C2216 Transistor k161 k161 jfet k192a Transistor C2668 fet k241 k161 mosfet Transistor C2347 Transistor C1923
Contextual Info: 高周波用半導体デバイス トランジスタ・FET・セルパック編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製
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050106dad13sk1143sk126s1255+152sc2644s-av243sk1153sk291s1256fet k161transistor c2216transistor k161k161 jfetk192atransistor c2668fet k241k161 mosfettransistor c2347transistor c1923
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2sc5088 horizontal transistors
Abstract: S-AV36 2SK192 mosfet data 3SK121 equivalent S-AV32 3SK121 fet 2SC2879 CB LINEAR CIRCUIT replacement for 2sc5088 horizontal transistors 3SK73 equivalent transistor 2sc2509
Contextual Info: High-Frequency Semiconductors Power Devices Semiconductor Company The information contained herein is subject to change without notice. 021023_D The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or
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3sk1143sk126s12552sc2644+152-av243sk1153sk291s12562-av26h2sc5088 horizontal transistorss-av362sk192 mosfet data3sk121 equivalents-av323sk121 fet2sc2879 cb linear circuitreplacement for 2sc5088 horizontal transistors3sk73equivalent transistor 2sc2509
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S-AU80
Abstract: TOSHIBA RF Power Module S-AV17 toshiba s-au80 quality FM TRANSMITTER S-AV17 toshiba 2sc2879 2sc2879 equivalent 2SK3075 S-AV6 5252 F ic
Contextual Info: RF Power Devices PRODUCT GUIDE • Selection Guide for RF Power Transistors Package PO W ø 12.7 10PEP 20PEP HF 30 MHz 60PEP 2SC2290 100PEP 2SC2879 150PEP 2SC2510* * : VCC = 28 V Package PO (W) ø 12.7 6 28 VHF 175 MHz 32 80 4 2SC2782 ■ Main Characteristics of RF Power Transistors
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10pep20pep60pep2sc2290+15100pep2sc2879150pep2sc25102sc2782s-au80toshiba rf power module s-av17toshiba s-au80quality fm transmitters-av17toshiba 2sc28792sc2879 equivalent2sk3075s-av65252 f ic
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