2SK3079 Search Results

Contextual Info: TOSHIBA Discrete Devices RF Power MOSFET 2SK3079A Application Note Contens Contens ・・Bias Bias Current Current // DC DC Characteristics Characteristics Vds Vds = 3.6V, 3.6V, 4.8V, 4.8V, 6.0V 6.0V Vgs = 0.5V ~ 1.8 8 V 1. Vgs = 0.5V ∼ 1.8V 0.05V

2SK3079

Contextual Info: 2SK3079 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3079 900 MHz BAND AMPLIFIER APPLICATIONS GSM Unit: mm Output Power Gain : PO = 35.5 dBmW (Min.) : GP = 9.5 dB (Min.) Drain Efficiency : ηD = 58% (Typ.) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

2SK3079A

Contextual Info: 2SK3079A 東芝電界効果トランジスタ シリコンNチャネルMOS形 2SK3079A ○ 470 MHz 帯増幅用 単位: mm ご注意 本資料に掲載されている製品は通信機器向高周波電力増幅用に使 用されることを意図しています。他の用途に使用することは意図もされてい

Contextual Info: 2SK3079A TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3079A 470 MHz Band Amplifier Applications Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment. These

Contextual Info: 2SK3079A Preliminary TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3079A 470 MHz Band Amplifier Applications Unit: mm • Output power: Po = 33.50dBmW 2.2 W (min) • Gain: Gp = 13.50dB (min) • Drain Efficiency: ηD = 50.0% (min) Maximum Ratings (Ta = 25°C)

2SK3079

Abstract: 2-5N1A
Contextual Info: 2SK3079 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3079 900 MHz BAND AMPLIFIER APPLICATIONS GSM Unit: mm l Output Power l Gain : PO = 33.0dBmW (Min) : GP = 7.0dB (Min) l Drain Efficiency : ηD = 40% (Min) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

Contextual Info: 2SK3079A TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3079A 470 MHz Band Amplifier Applications Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment. These

Contextual Info: 2SK3079 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3079 900 MHz BAND AMPLIFIER APPLICATIONS GSM Unit: mm Output Power Gain : PO = 33.0dBmW (Min) : GP = 7.0dB (Min) Drain Efficiency : ηD = 40% (Min) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

Contextual Info: 2SK3079A Preliminary TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3079A 470 MHz Band Amplifier Applications Unit: mm • Output power: Po = 33.50dBmW 2.2 W (min) • Gain: Gp = 13.50dB (min) • Drain Efficiency: ηD = 50.0% (min) Maximum Ratings (Ta = 25°C)

2SK3079A

Abstract: transistor HD marking 1350D
Contextual Info: 2SK3079A Preliminary TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3079A 470 MHz Band Amplifier Applications Unit: mm • Output power: Po = 33.50dBmW 2.2 W (min) · Gain: Gp = 13.50dB (min) · Drain Efficiency: ηD = 50.0% (min) Maximum Ratings (Ta = 25°C)

2SK3079A

Contextual Info: 2SK3079A TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3079A 470 MHz Band Amplifier Applications Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment. These

2SK3079A

Contextual Info: 2SK3079A TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3079A 470 MHz Band Amplifier Applications Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment. These

Contextual Info: 2SK3079A TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3079A 470 MHz Band Amplifier Applications Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment. These

2SK3079A

Contextual Info: 2SK3079A TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3079A 470 MHz Band Amplifier Applications Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment. These

TA4029CTC

Abstract: TA4032FT TB7602TU MT4S300T MT4S300U MT4S301T TA4029TU SOT-24 MT4S300 RFM12U7X
Contextual Info: 製品カタログ 2011-1 東芝半導体 製品カタログ 高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 アプリケーション別推奨製品 .3~8

IGBT GT30F124

Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

RFM70U12D

Abstract: 2SC3136 rfm03u3ct 2SK709 RFM70U12 MT3S106 MT3S111 MT3S111P tim4450 tpm1919
Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 高周波デバイス 高周波バイポーラ小信号トランジスタ 高周波小信号 FET 高周波パワーMOSFET 高周波バイポーラパワートランジスタ 高周波ダイオード 小信号 MMIC 高周波セルパック

JDV2S31CT

Abstract: 1SV283B 1SV271 2SK1875 2sk3476 1SV128 1SV307 1SV308 DCS1800 IMT-2000
Contextual Info: 製品カタログ 2009-9 東芝半導体 製品カタログ 高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 高周波用半導体デバイス 当社半導体製品につきましては格別のお引き立てを賜わり誠にありがとうございます。

2sc5108

Abstract: toshiba transistors catalog 2sk3476 UHF/VHF IC transceiver 2SK403 microwave Duplexer Am tuning varicap Wideband MMIC VCO covers 8 GHz to 12.5 GHz 2Sk3656 microwave transceiver 3.54 GHz
Contextual Info: 2009-9 PRODUCT GUIDE Radio-Frequency Semiconductors SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors,

3sk catalog

Abstract: TE85L Toshiba
Contextual Info: Semiconductor Catalog 2012-1 Radio-Frequency Semiconductors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Recommended Products by Application . 3 to 7 1.1 Cell Phones 1.2 TV Tuners 1.3 Low-Power Radios FRS/GMRS

sec 2sc5088

Abstract: samsung UHF/VHF TV Tuner 2SC5066 datasheet RF Bipolar Transistor transistor 2SC5066 2SC5088 SEC MT6L04AE MT4S200T AU82 MT6L63FS
Contextual Info: 2007-9 PRODUCT GUIDE Radio-Frequency Semiconductors Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors, diodes and

MT4S300T

Abstract: TA4032FT MT3S111TU JAPANESE 2SC TRANSISTOR 2010 MT4S301T TA4029CTC TB7602CTC MT3S111P JAPANESE TRANSISTOR 2SC 2010 2sk3476
Contextual Info: 2011-1 PRODUCT GUIDE Radio-Frequency Semiconductors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Recommended Products by Application . 3 to 8 1.1 Cell Phones 1.2 TV Tuners 1.3 FRS/GMRS 1.4 Cordless Phones

MT4S300T

Abstract: TGI0910-50 MT3S111P 2SC3136 S8850AF TA4032FT MT4S300U VHF-UHF Band oscillator 2sc5108 MT4S301T
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs Radio-Frequency Diodes Small-Signal MMICs Radio-Frequency Cell Packs Microwave Semiconductors

GT30F124

Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs