SSOP6 Search Results

TA4100F

Contextual Info: TOSHIBA TA4100F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA4100F UHF VHF RF, M IX APPLICATION FEATURES • High fT. fT = 5GHz • Differential Circuit is Composed of 3 Transistors. SSOP6-P-0.95 PIN ASSIGNMENT (TOP VIEW) B3 E W eight : 0.013g (Typ.)

Contextual Info: TA4017FT TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4017FT VHF Wide Band Amplifier Applications Features • High gain: |S21|2 = 13dB @45 MHz • Low distortion: IM3 = 42dB (@45 MHz) • Operating supply voltage: VCC = 4.75 V~5.25 V SSOP6-P-0.65

Contextual Info: SSOP64-P-525-0.80-BK Unit in millimeters typ., unless otherwise specified. Semiconductor Please consult OKI for soldering, assembly and storage recommendations. Specification are subject to change without notice. The drawings do not substitute or replace a product’s datasheet or the Package Information Databook.

LF33

Abstract: BIPOLAR M 846 of LF33 TA4100F
Contextual Info: SILICON MONOLITHIC BIPOLAR LINEAR INTEGRATED CIRCUIT TA41OOF UHF VHF RFf M IX APPLICATION FEATURES • High f j . f-j- = 5GHz • D ifferential Circuit is Composed of 3 Transistors. SSOP6-P (SM6) W e ig h t : 0.013g (Typ.) PIN A SSIG N M E N T (TOP V IE W )

bu90030g

Abstract: 9 pin to 15 PIN wiring DIAGRAM
Contextual Info: 1/4 Structure Function Voltage Regulated Charge Pump IC Silicon Monolithic Integrated Circuit Product BU90030G - Input voltage range 2.0V～4.0V - PFM operation - Output voltage 4.0V typ - 1.5MHz(typ) switching frequency. - SSOP6 package Function Absolute Maximum rating（Ta=25c）

Contextual Info: TOSHIBA TA4100F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA4100F UHF VHF RF, M IX APPLICATION FEATURES • High fT. fT = 5GHz • Differential Circuit is Composed of 3 Transistors. SSOP6-P-0.95 PIN ASSIGNMENT (TOP VIEW) B3 E W eight : 0.013g (Typ.)

SSOP6

Contextual Info: SSOP6 LSI Assembly Jisso Information • SSOP6 5 4 1 2 3 1.6 +0.2 −0.1 0.2Min. 6 + ° 4° −6 4° 0.13 +0.05 −0.03 1.1±0.05 0.05±0.05 1.25Max. 2.8±0.2 2.9±0.2 S 0.95 0.42 +0.05 −0.04 The contents described herein are subject to change without notice.

SSOP6

Abstract: 21Saiin
Contextual Info: SSOP6 LSI Assembly • SSOP6 5 4 1 2 3 1.6 +0.2 −0.1 0.2Min. 6 + ° 4° −6 4° 0.13 +0.05 −0.03 1.1±0.05 0.05±0.05 1.25Max. 2.8±0.2 2.9±0.2 S 0.95 0.42 +0.05 −0.04 The contents described herein are subject to change without notice. 0.1 S Units : mm

oki -bk

Contextual Info: SSOP60-P-700-0.65-BK Unit in millimeters typ., unless otherwise specified. Semiconductor Please consult OKI for soldering, assembly and storage recommendations. Specification are subject to change without notice. The drawings do not substitute or replace a product’s datasheet or the Package Information Databook.

SSOP60

Abstract: 96125 700065
Contextual Info: SSOP60-P-700-0.65-BK Mirror finish 5 パッケージ材質 リードフレーム材質 端子処理方法・材質 パッケージ質量 g 版数/改版日 エポキシ樹脂 42 アロイ 半田メッキ (≥5µm) 1.21 TYP. 5 版/96.12.5

Contextual Info: SSOP64-P-525-0.80-K Mirror finish 5 パッケージ材質 リードフレーム材質 端子処理方法・材質 パッケージ質量 g 版数/改版日 エポキシ樹脂 42 アロイ 半田メッキ (≥5µm) 1.34 TYP. 3 版/96.12.5

Contextual Info: SSOP64-P-525-0.80-K Mirror finish 5 Package material Lead frame material Pin treatment Package weight g Rev. No./Last Revised Epoxy resin 42 alloy Solder plating (≥5µm) 1.34 TYP. 3/Dec. 5, 1996

Contextual Info: SSOP60-P-700-0.65-BK Mirror finish 5 Package material Lead frame material Pin treatment Package weight g Rev. No./Last Revised Epoxy resin 42 alloy Solder plating (≥5µm) 1.21 TYP. 5/Dec. 5, 1996

TA4100F

Abstract: ta4100
Contextual Info: TOSHIBA TA4100F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA41OOF UHF VHF RF, MIX APPLICATION FEATURES • High fT . fT = 5GHz • Differential Circuit is Composed of 3 Transistors. SSOP6-P-0.95 PIN ASSIGNMENT (TOP VIEW) B3 E W eight : 0.013g (Typ.)

64P2G-A

Contextual Info: 64P2G-A Plastic 64pin 525mil SSOP EIAJ Package Code SSOP64-P-525-0.80 JEDEC Code – Weight g 1.59 Lead Material Alloy 42 e I2 33 E Recommended Mount Pad F Symbol 1 32 A D y b A1 L e A2 L1 HE e1 64 b2 c Detail F A A1 A2 b c D E e HE L L1 y b2 e1 I2 Dimension in Millimeters

Contextual Info: SILICON MONOLITHIC BIPOLAR LINEAR INTEGRATED CIRCUIT TA4000F VHF-UHF WIDE BAND AMPLIFIER APPLICATIONS FEATURES • Band W id th 700MHz M in. @ 3 dB dow n • Low Noise 4dB (Typ.) @ f = 400MHz • Small Package M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC

TB62752AFUG

Abstract: 122H
Contextual Info: TB62752AFUG TOSHIBA BiCD Integrated Circuit Silicon Monolithic TB62752AFUG Step Up Type DC-DC Converter for White LED The TB62752AFUG is a high efficient Step-Up Type DC-DC Converter specially designed for constant current driving of White LED. This IC contains N-ch MOSFET Transistor for Coil-Switching,

CXLD140-6R8

Contextual Info: TB62732FU TOSHIBA BiCD Digital Integrated Circuit Silicon Monolithic TB62732FU Step-up DC/DC Converter for White LED Driver TB62732FU is the high efficiency Step-up type DC/DC converter that it is designed suitably in constant current lighting of white LED.

TA1294F

Abstract: TD62C950RF TD62C950 TD62C950RFg TB9250N TB9248N PA2028A ta1219n TA8310 TA8690ANG
Contextual Info: TOSHIBA TOSHIBA CORPORATION SEMICONDUCTOR COMPANY PAGE : 1 of 3 REF NO. : KT404-006 DATE : April 7, 2004 Please write customer’s name to submit. Shift to Lead Pb -Free Packages for System LSI Products (2nd Stage) In consideration of the global environmental issues, Toshiba has been making efforts

MSM5432128

Contextual Info: Pr E2L0045-17-Y1 el im DESCRIPTION The MSM5432126/8 is a new generation Graphics DRAM organized in a 131,072-word ¥ 32-bit configuration. The technology used to fabricate the MSM5432126/8 is OKI's CMOS silicon gate process technology. The device operates with a single 5 V power supply.

MSM5416263

Abstract: 256x16* STATIC RAM weland SM5416
Contextual Info: OKI Semiconductor MSM5416263 262,144-W ord x 1 6 -Bit M ultiport D RA M DESCRIPTION The MSM5416263 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit dynamic RAM and a 512-word by 16-bit SAM. Its RAM and SAM operate independently and asynchronously.

MAS 10 RCD

Abstract: MSM54V32128 1DQ23
Contextual Info: O K I Semiconductor_ M SM 54V 32126/8_ 131,072-Word x 32-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM54V32126/8 is a new generation Graphic D RAM organized in 131,072-word x 32-bit configuration. The technology used to fabricate the MSM54V32126/8 is OKI's CM O S silicon gate

EZ23

Abstract: MSM5432128
Contextual Info: O K I Semiconductor MSM5432126/8_ 131,072-Word x 32-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5432126/8 is a new generation Graphic DRAM organized in 131,072-word x 32-bit configuration. The technology used to fabricate the MSM5432126/8 is OKI’s CMOS silicon gate

MSM5416283-60

Abstract: MSM5416283 SAM256
Contextual Info: O KI Semiconductor MSM5416283 262,144-Word x 16-Bit Multiport DRAM DESCRIPTION The MSM5416283 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit dynamic RAM, and a 512-word by 16-bit SAM. Its RAM and SAM operate independently and asynchronously.