SCT598 Search Results

rx 3152

Abstract: A1306 2Q394 IC LP7 A-1306 500R BFP405 BGC405 Q62702-G0091 RX82 equivalent
Contextual Info: BGC405 Self-Biased BFP405 l l l l l SIEGET25- Technology Small SCT598-Package Control Pin For Switching The Device Off Current Easy Adjustable By An External Resistor Voltage Independent Current 2V – 4.5V 8 7 6 5 2 1 3 4 VPW05982 ESD: Electrostatic discharge sensitive device, observe

BFP420 application notes 900MHz

Abstract: SCT598-Package BFP420 application notes BFP420 BGC420 Q62702-G0092 500R 134fF IC LP7 3770E-01
Contextual Info: BGC420 Self-Biased BFP420 l l l l l SIEGET25- Technology Small SCT598-Package Control Pin For Switching The Device Off Current Easy Adjustable By An External Resistor Voltage Independent Current 2V – 4.5V 8 7 6 5 2 1 3 4 VPW05982 ESD: Electrostatic discharge sensitive device, observe

SCT598-Package

Abstract: stocko BGC420 BFP420 application notes 500R BFP420
Contextual Info: BGC 420 High Frequency Components A 1.85 GHz Low Noise Self-Biased Transistor Amplifier using BGC420 Features 8 • Gain=16dB / NF=1.65dB • Small SCT598-Package • Integrated Active Bias Circuit • Control Pin for Power-Down Mode • Current Easily Adjusted with an External Resistor

2Q394

Abstract: rx 3152 BGC405 A12 marking ikr 251 50W rf power transistor 100MHz 500R BFP405 Q62702-G0091 TL18
Contextual Info: BGC405 Self-Biased BFP405 l l l l l SIEGET25- Technology Small SCT598-Package Control Pin For Switching The Device Off Current Easy Adjustable By An External Resistor Voltage Independent Current 2V – 4.5V 8 7 6 5 2 1 3 4 VPW05982 ESD: Electrostatic discharge sensitive device, observe

S4 78a DIODE schottky

Abstract: diode S6 78A BC 148 TRANSISTOR DATASHEET transistors BC 543 TRANSISTOR BC 158 BC 158 is npn or pnp 68W npn TRANSISTOR BC s6 78a baw 92
Contextual Info: Selection Guide Table of Contents Page RF-Transistors and MMICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 MOS Field-Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

MARKING 68W SOT-23

Abstract: marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23
Contextual Info: Marking Sorted by Code Marking Type Package Marking Type Package 13 13s 14 14s 15 15s 16 16s 17 17s 1A 1A 1A 1As 1B 1B 1Bs 1Bs 1C 1D 1D 1Ds 1E 1Es 1F 1F 1Fs 1G 1G 1G 1Gs 1J 1J 1Js 1K 1K 1K 1K BAS 125 BAS 125W BAS 125-04 BAS 125-04W BAS 125-05 BAS 125-05W BAS 125-06

ansoft software

Abstract: IPC-9501 ISM2400 ISM900 Q62702-G0080 smd marking code vd SCT595 D2 DIN 6784
Contextual Info: GaAs MMIC CGY 196 Data Sheet • • • • • • • • • Multiband Power Amplifier [800 … 3500 MHz] DECT, PHS, PWT, Bluetooth, ISM900, ISM2400, WLL Single Voltage Supply Operating voltage range: 2 V to 6 V Pout = 25.5 dBm at Vd = 2.4 V Pout = 26.0 dBm at Vd = 3.0 V

SOT323 reflow

Abstract: All smd Packages sct-595 sot-23 dual infrared transistor CECC 00802 reflow profile 00802 SC-75 SCT-595 sod323 reflow
Contextual Info: Notes on Processing Component Placement The ability to place semiconductors depends very much on the type involved. Up to a pitch size of 1.27 mm, mechanical centering by tools of an automatic component placement machine suffices, e.g. jaws and centering units. Multiple-pin ICs have to be

marking m5S

Abstract: smd code marking C8 SCT-598-8-1 966 MHz
Contextual Info: GaAs MMIC CMY 212 Data Sheet • Ultralinear mixer with integrated IF-amplifier and LO-Buffer for CDMA receiver applications • Typical overall performance at cellular frequencies for PLO = – 4 dBm operation conditions: 3 V, 11 mA; fRF = 881 MHz; fLO = 966 MHz :

diode zl 82

Abstract: diode SMD MARKING CODE SAW diode zl 8.2 BCR22 smd marking VB SCT-598 smd marking gc smd marking GI 20 5 pin ZL smd diode
Contextual Info: GaAs MMIC CMY 800 Target Data Sheet • Bipolar RF amplifier and GaAs mixer with integrated IF-amplifier for mobile communication i.e. AMPS • typical overall performance (operation conditions 2.7 V, 8 mA; fRF = 881 MHz; fLO = 997 Mhz): Gain 22 dB (incl. 3 dB loss of SAW), Input P– 1 dB

sot39

Contextual Info: GaAs Components In fineon ftschnu'ogtas Package Information 5 Package Information Discrete and BF Semiconductors Packages Manufacturer EH s CD Date code Year/Month Type code Example > O « = ElH 1994, June • BCW 66 H Manufacturer WVI s Type code Example

D2 DIN 6784

Abstract: MARKING CODE mm33 Y197
Contextual Info: In fineon fts c bn c !03 i es GaAs MMIC CGY 197 Data Sheet • Multiband Power Amplifier 800 . 3500 MHz • DECT, PHS, PWT, Bluetooth, ISM900, ISM2400 • Single Voltage Supply • POUJ = 25.0 dBm at VD = 2.1 V . p OUT = 25.5 dBm at VD = 2.3 V • / ’out = 27.5 dBm at VD = 3.0 V

marking m5S

Contextual Info: Infineon tssihncio^iat GaAs MMIC CM Y 212 Data Sheet • Ultralinear mixer with integrated IF-amplifier and LO-Bufferfor CDMA receiver applications • Typical overall performance at cellular frequen­ cies for P L0 - - 4 dBm operation conditions: 3 V, 11 mA ;/RF = 881 M Hz;/L0 = 966 MHz :

P-SOT-143

Abstract: CSY210 Type CF 739 Marking Ordering Code MSs P-SOT343-4-1 cly5 P-SOT143-4-1 Q62702-F1215 G69 marking
Contextual Info: GaAs Components Infineon t »c h n o !o g i ss Alphanumeric Type Index 12 Alphanumeric Type Index GaAs RF-Transistors, MMICs and Modules Type Marking Ordering Code Package Page BGV 503 BGV 503 Q62702-L0132 P-TSSOP-10-1 170 BGV 903 BGV 903 Q62702-L0131 P-TSSOP-10-1

Contextual Info: GaAs MMIC CMY213 Datasheet • • • • • Ultralinear mixer with integrated IF-amplifier and LO-Buffer for CDMA receiver applications typical overall performance at cellular

Contextual Info: CMY213 Datasheet Ultra-linear Mixer with Integrated IF Amp and LO Buffer Description: CMY213 is a general purpose down-converter device designed for receiver applications such as cellular and PCS mobile phones, ISM bands, GPS receivers, L-band satellite terminals, WLAN and pagers. It is particularly

ghz wlan RECEIVER CIRCUIT DIAGRAM

Contextual Info: CMY213 Datasheet Ultra-linear Mixer with Integrated IF Amp and LO Buffer Description: CMY213 is a general purpose down-converter device designed for receiver applications such as cellular and PCS mobile phones, ISM bands, GPS receivers, L-band satellite terminals, WLAN and pagers. It is particularly

ujt 2646

Abstract: TRANSISTOR J 5804 label infineon barcode msc 1697 MSC 1697 IC pin diagram Rohde und Schwarz Active Antenna HE 011 cd 6283 audio smd transistor v75 log tx2 0909 IC data book free download
Contextual Info: D a t a B o o k , J a n. 20 0 1 GaAs Components N e v e r s t o p t h i n k i n g . Edition 2001-01-01 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany Infineon Technologies AG 2001. All Rights Reserved. Attention please!

RF MODULE CIRCUIT DIAGRAM dect

Abstract: IPC-9501 Siemens temperature sensor pulse load calculation formula Siemens databook MMIC SIEMENS gaas CGY196 DECT siemens zs50
Contextual Info: CGY 196 GaAs MMIC Preliminary Data l l l l l l l l l Broadband Power Amplifier [ 800.3500 Mhz ] DECT,PHS,PCS,GSM,AMPS,WLAN,WLL Single Voltage Supply Operating voltage range: 2.0to 6 V Pout = 25.5dBm at Vd=2.4V Pout = 27.0dBm at Vd=3.0V Pout = 30.0dBm at Vd=5.0V

CGY196

Abstract: ISM2400 ISM900 Q62702-G0080 IPC-9501 infineon reflow
Contextual Info: GaAs MMIC CGY 196 Datasheet * Multiband Power Amplifier [ 800.3500 Mhz ] * DECT,PHS,PWT,Bluetooth,ISM900,ISM2400,WLL * Single Voltage Supply * Operating voltage range: 2V to 6 V

marking M6s 22

Abstract: CMY213 Q62702-M0032
Contextual Info: CMY213 Datasheet Ultra-linear Mixer with Integrated IF Amp and LO Buffer Description: CMY213 is a general purpose down-converter device designed for receiver applications such as cellular and PCS mobile phones, ISM bands, GPS receivers, L-band satellite terminals, WLAN and pagers. It is particularly

IPC-9501

Abstract: IPC-4202 infineon databook CGY197 ISM2400 ISM900 Q62702-G0116 Siemens Halbleiter
Contextual Info: GaAs MMIC CGY 197 Preliminary Datasheet • • • • • • • • • • ESD: Multiband Power Amplifier [ 800.3500 Mhz ] DECT,PHS,PWT,Bluetooth,ISM900,ISM2400

N-Channel, Dual-Gate FET

Abstract: CF750 GaAs pHEMT Low Noise MMIC Amplifier sot-343 N-channel dual-gate GaAs MESFET
Contextual Info: Ga As Components Infineon ? a c Kn o ! o 9 i a s Selection Guide 2 Selection Guide GaAs RF-Transistors, MMICs and Modules. 5 Dual-Gate GaAs F E T s.

TGA2517

Abstract: TQP6M9002 TQM653029 TGS4304 SG-O1-16 TGA2503 TAT7469 TGA9092-SCC 854651 AH125
Contextual Info: 02/2010 Triquint SEMICONDUCTOR Product Selection Guide 2010 ABOUT TRIQUINT SEMICONDUCTOR ABOUT TRIQUINT SEMICONDUCTOR Corporate Headquarters – Hillsboro, Oregon Corporate Headquarters – Hillsboro, OR Semiconductor is Digital a leading TriQuint TriQuint