BCP72M
Abstract: SCT595
Contextual Info: BCP72M PNP Silicon AF Power Transistor 4 Drain switch for RF power amplifier stages For AF driver and output stages 5 High collector current Low collector-emitter saturation voltage 3 2 1 VPW05980 Type Marking BCP72M PAs Pin Configuration Package 1 = E1 2 = C 3 = E2 4 = B 5 = C SCT595
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TRANSISTOR S1d
Abstract: SCT595 SMBTA42M SMBTA92M
Contextual Info: SMBTA42M NPN Silicon High-Voltage Transistor 4 High breakdown voltage Low collector-emitter saturation voltage 5 Complementary type: SMBTA92M PNP 3 2 1 VPW05980 Type Marking SMBTA42M s1D Pin Configuration 1=B 2=C 3=E Package 4=n.c. 5 = C SCT595 Maximum Ratings
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BAW78M
Abstract: SCT595 78-AD
Contextual Info: BAW78M Silicon Switching Diode 4 Switching applications 5 High breakdown voltage 3 2 1 VPW05980 Type Marking BAW78M GDs Pin Configuration 1=A Package 2 = C 3 n.c. 4 n.c. 5 = C SCT595 Maximum Ratings Parameter Symbol Diode reverse voltage VR 400 Peak reverse voltage
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TLE4250-2G
Abstract: TLE4250 TLE4250-2 cq 532 TLE4250 2G TLE4250-2G download HLG09053 HLG09090 JESD51-2 cq 531
Contextual Info: Data sheet, Rev. 1.0, July 2007 TLE4250-2 Low Dropout Voltage Tracking Regulator Automotive Power Low Dropout Voltage Tracking Regulator 1 TLE4250-2 Overview Features • • • • • • • • • • • • • • 50 mA Output Current Capability Tiny SMD-Package PG-SCT595-5 with lowest
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Contextual Info: SMBTA06M NPN Silicon AF Transistor 4 High breakdown voltage Low collector-emitter saturation voltage 5 Complementary type: SMBTA56M PNP 3 2 1 VPW05980 Type Marking SMBTA06M s1G Pin Configuration 1=B 2=C 3=E Package 4=n.c. 5 = C SCT595 Maximum Ratings
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BCP70M
Abstract: SCT595
Contextual Info: BCP70M PNP Silicon AF Power Transistor 4 • For AF driver and output stages • High collector current 5 • Low collector-emitter saturation voltage 3 2 1 VPW05980 Type Marking BCP70M PBs Pin Configuration Package 1 = E1 2 = C 3 = E2 4 = B 5 = C SCT595 Maximum Ratings E1 and E2 connected externaly
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SCT595
Abstract: SMBTA42M SMBTA92M
Contextual Info: SMBTA92M PNP Silicon High-Voltage Transistor 4 High breakdown voltage Low collector-emitter saturation voltage 5 Complementary type: SMBTA42M NPN 3 2 1 VPW05980 Type Marking SMBTA92M s2D Pin Configuration 1=B 2=C 3=E Package 4=n.c. 5 = C SCT595 Maximum Ratings
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Contextual Info: SMBTA92M PNP Silicon High-Voltage Transistor 4 High breakdown voltage Low collector-emitter saturation voltage 5 Complementary type: SMBTA42M NPN 3 2 1 VPW05980 Type Marking SMBTA92M s2D Pin Configuration 1=B 2=C 3=E Package 4=n.c. 5 = C SCT595 Maximum Ratings
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Contextual Info: SMBTA56M PNP Silicon AF Transistor 4 High breakdown voltage Low collector-emitter saturation voltage 5 Complementary type: SMBTA06M NPN 3 2 1 VPW05980 Type Marking SMBTA56M s2G Pin Configuration 1=B 2=C 3=E Package 4 n.c. 5 = C SCT595 Maximum Ratings
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MARKING S1G
Abstract: SCT595 SMBTA06M SMBTA56M
Contextual Info: SMBTA06M NPN Silicon AF Transistor 4 High breakdown voltage Low collector-emitter saturation voltage 5 Complementary type: SMBTA56M PNP 3 2 1 VPW05980 Type Marking SMBTA06M s1G Pin Configuration 1=B 2=C 3=E Package 4=n.c. 5 = C SCT595 Maximum Ratings
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SCT595
Abstract: SMBTA06M SMBTA56M TS1200
Contextual Info: SMBTA56M PNP Silicon AF Transistor 4 High breakdown voltage Low collector-emitter saturation voltage 5 Complementary type: SMBTA06M NPN 3 2 1 VPW05980 Type Marking SMBTA56M s2G Pin Configuration 1=B 2=C 3=E Package 4 n.c. 5 = C SCT595 Maximum Ratings
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marking cdm
Abstract: vdr datasheet JESD22-A114 PG-SCT595-5
Contextual Info: Low Dropout Linear LED Driver TLE 4240-2/3 M Features • • • • • • • • • • • Typ. 58 mA constant output current Low dropout voltage Tiny SMD package PG-SCT595-5 Open load detection Version TLE 4240-3 M only 45 V input voltage operation range
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PG-SCT595
Abstract: pnp transistor 313 smd marking 52 PG-SCT595-5 PG-SCT-595-5 PG-SCT-595
Contextual Info: Low Dropout Voltage Tracking Regulator TLE 4250-2 Feature Overview • • • • • • • • • • • • • 50 mA Output Current Capability Tiny SMD-Package PG-SCT595-5 with lowest thermal resistance Low Output Tracking Tolerance Stable with Small Ceramic Output Capacitor
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TRANSISTOR S1d
Contextual Info: SMBTA42M NPN Silicon High-Voltage Transistor 4 High breakdown voltage Low collector-emitter saturation voltage 5 Complementary type: SMBTA92M PNP 3 2 1 VPW05980 Type Marking SMBTA42M s1D Pin Configuration 1=B 2=C 3=E Package 4=n.c. 5 = C SCT595 Maximum Ratings
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SCT595
Abstract: SCT-595 DIN 6784 SCT595-5-1 sct595 infineon DIN6784 Package and Thermal Information 334 k
Contextual Info: Package and Thermal Information SCT595-5-1 Footprint/Dimensions 2.9 ±0.2 2.2 B 1.4 1.1 max 1.2 +0.1 -0.05 (0.3) 1 0.95 0.25 M B 2 3 GND 0.3 +0.1 -0.05 10˚max 1.6 ±0.1 0.5 0.8 4 10˚max 5 0.1 max +0.2 acc. to DIN 6784 2.6 max 1.9 2.9 A 0.95 Reflow soldering
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sct595-5-1sct595sct-595din 6784+4sct595 infineondin6784package and thermal information334 k
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BCP70M
Abstract: SCT595
Contextual Info: BCP70M PNP Silicon AF Power Transistor 4 For AF driver and output stages High collector current 5 Low collector-emitter saturation voltage 3 2 1 VPW05980 Type Marking BCP70M PBs Pin Configuration Package 1 = E1 2 = C 3 = E2 4 = B 5 = C SCT595 Maximum Ratings E1 and E2 connected externaly
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Contextual Info: SIEMENS BC P71M NPN Silicon AF Power Transistor Preliminary data • Drain switch for RF power amplifier stages • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage Q62702-C2597 LU II CO PCs O li BCP71M
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Contextual Info: SIEMENS BCP70M PNP Silicon AF Power Transistor Preliminary data • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage Package o II in h CO Q62702-C2596 h PBs IXI BCP 70M Pin Configuration CO Ordering Code
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Contextual Info: SIEMENS SMBTA 56M PNP Silicon AF Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 06M NPN h HI CO Q62702-A3474 o s2G II CM SMBTA 56M Pin C onfiguration CO II Marking O rdering Code T— Type
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S4 78a DIODE schottky
Abstract: diode S6 78A BC 148 TRANSISTOR DATASHEET transistors BC 543 TRANSISTOR BC 158 BC 158 is npn or pnp 68W npn TRANSISTOR BC s6 78a baw 92
Contextual Info: Selection Guide Table of Contents Page RF-Transistors and MMICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 MOS Field-Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
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MARKING 68W SOT-23
Abstract: marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23
Contextual Info: Marking Sorted by Code Marking Type Package Marking Type Package 13 13s 14 14s 15 15s 16 16s 17 17s 1A 1A 1A 1As 1B 1B 1Bs 1Bs 1C 1D 1D 1Ds 1E 1Es 1F 1F 1Fs 1G 1G 1G 1Gs 1J 1J 1Js 1K 1K 1K 1K BAS 125 BAS 125W BAS 125-04 BAS 125-04W BAS 125-05 BAS 125-05W BAS 125-06
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V75 marking
Abstract: MESS smd code Y8s Ansoft Y1 smd y8s smd code ISM2400 ISM450 ISM900 SCT-595
Contextual Info: GaAs MMIC CGY 63 Preliminary Data Sheet • Broadband Driver Amplifier 800 … 2500 MHz • Bluetooth, ISM450, ISM900, ISM2400 • Base Station Driver Amplifier • Single Voltage Supply: 2.7 to 6 V • POUT = 20.0 dBm at VD = 3.2 V (CW) • POUT = 22.0 dBm at VD = 5.0 V (CW)
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Contextual Info: BCP 71M NPN Silicon AF Power Transistor Preliminary data 4 • Drain switch for RF power amplifier stages • For AF driver and output stages 5 • High collector current • Low collector-emitter saturation voltage 3 2 1 VPW05980 Type Marking Ordering Code Pin Configuration
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142001
Abstract: BFP490 SCT595 SCT-595
Contextual Info: SIEGET 25 BFP490 NPN Silicon RF Transistor 4 For high power amplifiers 5 Compression point P-1dB = 26.5 dBm at 1.8 GHz maxim. available Gain Gma = 8.5 dB at 1.8 GHz 3 Transition frequency fT > 17 GHz 2 Gold metallization for high reliability 1 SIEGET 25 GHz fT - Line
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